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Renesas 71V3556SA100BGG
- Part No.:
- 71V3556SA100BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3556SA100BGG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,179
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Product details
Overview
71V3556SA100BGG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 100 MHz clock speed, 3.5 ns clock-to-data access, zero bus turnaround architecture, and JEDEC-standard 100-pin TQFP package. It enables high-throughput memory interfacing in network packet buffers and cache controllers where read/write switching latency must be eliminated.
For engineers reviewing the 71V3556SA100BGG datasheet, 71V3556SA100BGG pinout, 71V3556SA100BGG application, or 71V3556SA100BGG equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), JTAG boundary scan compliance (IEEE 1149.1), and industrial temperature operation (–40°C to +85°C).
Technical Context
The 71V3556SA100BGG implements a fully pipelined synchronous interface with positive-edge-triggered address, data, and control registers. Its ZBT™ architecture eliminates dead cycles between consecutive reads and writes by overlapping bus turnaround with internal memory access.
It integrates an on-chip 4-word burst counter controlled by ADV/LD and LBO pins, supports asynchronous OE for output tri-state control, and includes three chip enables (CE1, CE2, CE2) for depth expansion. The SA variant adds optional IEEE 1149.1-compliant JTAG test interface with TMS/TDI/TCK/TDO/TRST signals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 36-bit wide data path for high-bandwidth applications like packet buffering. |
| Clock Frequency | 100 MHz; enables 10 ns clock period for deterministic timing in synchronous bus systems. |
| Access Time | 3.5 ns clock-to-data; guarantees data valid within 3.5 ns after rising clock edge - critical for tight timing budgets. |
| Supply Voltage | 3.3 V ±5% (VDD core) and 3.3 V ±5% (VDDQ I/O); dual-rail design isolates core logic from I/O noise. |
| Operating Temperature | –40°C to +85°C; qualified for industrial environments including telecom infrastructure and industrial controllers. |
| Burst Capability | 4-word burst (linear or interleaved); reduces address setup overhead and increases effective bandwidth by 4× per load cycle. |
| JTAG Support | IEEE 1149.1 compliant with TMS/TDI/TCK/TDO/TRST; enables boundary-scan testing without external test fixtures. |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14/16/66 tolerate VIH-level voltage without direct VDD connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge; A0–A16 used for 128K×36 addressing; A17 unused in this configuration. |
| CLK | System Clock Input | Single-ended positive-edge-triggered master clock; all synchronous timing referenced to this signal. |
| R/W | Read/Write Control | Synchronous signal defining cycle type; sampled with ADV/LD low to initiate load operation two cycles later. |
| ADV/LD | Burst Address Advance / New Address Load | High = increment internal burst counter; low = load external address into register - enables seamless burst sequencing. |
| LBO | Linear/Interleaved Burst Order Select | Static input: low = linear burst (0,1,2,3); high = interleaved burst (0,2,1,3) - matches CPU cache line patterns. |
| BW1–BW4 | Individual Byte Write Enables | Active-low synchronous controls for 9-bit bytes (I/O[0:7]+P1 through I/O[24:31]+P4); allows partial-word writes without masking logic. |
| CE1, CE2, CE2 | Chip Enable Inputs | Three enables for depth expansion: CE1/CE2 active-low, CE2 active-high; any false enable initiates 2-cycle deselect. |
| OE | Output Enable | Asynchronous active-low control; tri-states outputs independently of clock - simplifies bus arbitration. |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | IEEE 1149.1 boundary-scan signals; TRST optional asynchronous reset; all except TDO are inputs with internal pull-ups. |
| VDD, VDDQ, VSS | Power/Ground Terminals | VDD = 3.3 V core supply; VDDQ = 3.3 V I/O supply; separate rails minimize switching noise coupling into core logic. |
| ZZ | Sleep Mode Input | Active-high synchronous input that gates internal CLK and reduces power to retention level; data retained during sleep. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read and write operations - enables back-to-back memory transactions at full clock rate. |
| 4-Word Pipelined Burst | Single address load triggers four consecutive data transfers; reduces address bus traffic and improves effective throughput by 4×. |
| Individual Byte Write Control | Four independent BWx signals allow selective 9-bit byte writes - avoids full-word read-modify-write sequences in firmware. |
| Internally Synchronized OE | OE is the only asynchronous signal; all other controls are clocked - simplifies timing closure and eliminates metastability risks. |
| JTAG Boundary Scan (IEEE 1149.1) | Full scan chain support with optional TRST; enables PCB-level interconnect testing and in-system programming verification. |
| Industrial Temperature Range | Rated for –40°C to +85°C operation; validated across thermal cycling and voltage extremes for telecom and industrial use. |
Applications
| Network Packet Buffering | Cache Controller Memory |
|---|---|
|
Use Scenario: Storing ingress/egress Ethernet or ATM packets in switch fabric ASICs before forwarding decisions. IC Role / Device Role / Timing Role: High-speed, low-latency buffer with zero-turnaround capability to sustain line-rate traffic without backpressure. Use Value: 3.5 ns access time and 100 MHz clock enable real-time packet queuing; burst mode aligns with 64-byte cache line sizes. |
Use Scenario: Serving as L2 or L3 cache tag/data RAM in embedded RISC processors or DSP subsystems. IC Role / Device Role / Timing Role: Synchronous pipelined SRAM interfaced directly to CPU bus with deterministic 2-cycle read/write latency. Use Value: ZBT™ architecture eliminates bus idle cycles during cache line fills, increasing effective bandwidth by up to 30% vs. standard sync SRAM. |
| Telecom Line Card Memory | Industrial PLC Data Logging |
|
Use Scenario: Buffering voice-over-IP (VoIP) frames and signaling messages in carrier-grade line cards. IC Role / Device Role / Timing Role: Industrial-temperature SRAM with JTAG testability for field-deployed telecom hardware requiring long-term reliability. Use Value: –40°C to +85°C rating ensures stable operation in uncontrolled cabinet environments; JTAG enables post-deployment diagnostics. |
Use Scenario: Storing sensor history, alarm logs, and configuration snapshots in programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile-retentive memory buffer with sleep mode (ZZ) for power-constrained edge devices. Use Value: ZZ pin reduces standby current to retention level while preserving data - extends battery life in remote monitoring nodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV33-100AXC | 128K × 32-bit, 100 MHz, no JTAG, no ZZ pin, 3.3 V only (no VDDQ separation) | Lacks burst counter, byte write granularity, and sleep mode - suitable for simpler buffering but not cache coherency. | Select when JTAG testability and low-power sleep are not required; verify compatibility with 32-bit data bus width. |
| AS7C33128PFSIG | 128K × 36-bit, 133 MHz, no ZBT™, no burst counter, no JTAG, commercial temp only (0°C to +70°C) | Higher clock speed but introduces bus turnaround delay; lacks industrial temp and test features. | Choose only for cost-sensitive commercial designs where zero-turnaround and extended temperature are unnecessary. |
Compared with CY7C1356BV33-100AXC and AS7C33128PFSIG, the 71V3556SA100BGG uniquely delivers ZBT™ architecture, IEEE 1149.1 JTAG, and industrial temperature support in a single 100-pin TQFP package - making it optimal for telecom and embedded control systems requiring both performance and testability.
Availability
71V3556SA100BGG is available at Aetrix Electronics and suitable for network packet buffering, cache controller memory, telecom line card memory, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3556SA100BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.
The 71V3556SA100BGG belongs to IDT's ZBT™ SRAM product line, designed specifically for applications demanding zero-latency bus turnaround in high-speed packet processing, cache hierarchies, and real-time control systems.
FAQ
What does the "SA" suffix indicate in 71V3556SA100BGG?
The "SA" suffix denotes the inclusion of IEEE 1149.1-compliant JTAG boundary scan functionality. Unlike the base "S" version, the 71V3556SA100BGG integrates TMS, TDI, TCK, TDO, and optional TRST pins - enabling in-circuit testability and debug visibility without requiring external test adapters. This feature is confirmed in the functional block diagram and pin definition tables.
Does 71V3556SA100BGG support both linear and interleaved burst modes?
Yes, the 71V3556SA100BGG supports both burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO is low, the device executes linear bursts (0,1,2,3); when high, it performs interleaved bursts (0,2,1,3). This behavior is explicitly defined in the Linear and Interleaved Burst Sequence Tables and verified in timing diagrams showing address progression.
How does the ZBT™ architecture eliminate bus turnaround delay in 71V3556SA100BGG?
The ZBT™ architecture in the 71V3556SA100BGG removes dead cycles between read and write operations by allowing the next transaction to begin immediately after the previous one - without waiting for bus direction settling. This is achieved through internal pipelining and synchronized control logic, as confirmed in the description stating "designed to eliminate dead bus cycles when turning the bus around between reads and writes."
Can 71V3556SA100BGG operate in low-power sleep mode?
Yes, the 71V3556SA100BGG supports sleep mode via the ZZ pin. When ZZ is driven high, the internal clock is gated and power consumption drops to its lowest level while guaranteeing data retention. This is documented in the Pin Definition table, which specifies ZZ as a "synchronous sleep mode input" with internal pulldown and retention guarantee.
What is the function of ADV/LD in 71V3556SA100BGG burst operations?
The ADV/LD pin controls burst sequencing: when sampled low at the rising clock edge, it loads a new external address; when high, it advances the internal burst counter. This dual-mode operation enables seamless transitions between burst and non-burst accesses, as confirmed in the Pin Definition table and Truth Table entries for LOAD WRITE/READ versus BURST WRITE/READ cycles.
71V3556SA100BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3556SA100BGG FAQ
1.How can I place an order for 71V3556SA100BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA100BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA100BGG reliable?
The price and inventory of 71V3556SA100BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA100BGG is usually 5 days.
3.What payment methods are accepted for 71V3556SA100BGG?
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4.How is shipping managed for 71V3556SA100BGG?
71V3556SA100BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA100BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA100BGG?
For technical support, including 71V3556SA100BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA100BGG requirements.
6.How does Aetrix verify that 71V3556SA100BGG is sourced from the original manufacturer or authorized distributors?
All 71V3556SA100BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA100BGG meets industry standards.
7.What is the process for return or replacement of 71V3556SA100BGG?
All 71V3556SA100BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA100BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA100BGG part is unused and in its original packaging.
Return procedure for 71V3556SA100BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA100BGG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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