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Renesas 71V3556SA100BGG8
- Part No.:
- 71V3556SA100BGG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3556SA100BGG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,470
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Product details
Overview
71V3556SA100BGG8 from Renesas is a 3.3V, 128K × 36-bit (4.5 Mbit) synchronous ZBT™ SRAM with zero bus turnaround, 100 MHz clock operation (10 ns clock-to-data), pipelined outputs, and 4-word burst capability. It features synchronous address/control/data registers, individual byte write enables (BW1–BW4), and JTAG boundary scan (IEEE 1149.1). It is used in high-speed networking packet buffers and telecom line-card memory subsystems.
For engineers reviewing the 71V3556SA100BGG8 datasheet, 71V3556SA100BGG8 pinout, 71V3556SA100BGG8 application, or 71V3556SA100BGG8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O voltage tolerance, industrial temperature range support (–40°C to +85°C), and JTAG test interface availability.
Technical Context
The 71V3556SA100BGG8 implements a fully synchronous, pipelined architecture where address and control signals are registered on the rising edge of CLK, with data output valid two cycles later. Its ZBT™ feature eliminates dead cycles between read/write transitions by internally managing bus direction without external OE control.
It integrates a 4-word burst counter selectable between linear and interleaved sequences via LBO, supports depth expansion using three chip enables (CE1, CE2, CE2), and includes optional IEEE 1149.1 JTAG for boundary scan testing - available only in BGA packages per documentation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via configuration |
| Clock Frequency | 100 MHz (10 ns period); guarantees 10 ns clock-to-data access time |
| Supply Voltage | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); no power sequencing required |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full range |
| Burst Mode | 4-word burst (linear or interleaved); controlled by LBO pin; ADV/LD increments internal counter |
| Byte Write Control | Four independent active-low byte write enables (BW1–BW4) for 9-bit segments |
| JTAG Support | IEEE 1149.1 compliant boundary scan; TMS/TDI/TCK/TDO/TRST pins present in BGA variants |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14/16/66 tolerate VIH-level inputs without direct VDD connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address register inputs; A0–A16 used for 128K×36 mode |
| CLK | Clock Input | Rising-edge-triggered master clock; all synchronous timing referenced to this edge |
| R/W | Read/Write Control | Synchronous signal defining cycle type; sampled with ADV/LD to initiate load operations |
| ADV/LD | Address Load / Burst Advance | Low = load new external address; High = increment internal burst counter |
| LBO | Burst Order Select | Static input: Low = linear burst, High = interleaved burst sequence |
| BW1–BW4 | Byte Write Enables | Active-low enables for four 9-bit data segments; may be tied low for full-word writes |
| CE1, CE2, CE2 | Chip Enables | Three enables for depth expansion; CE1/CE2 active-low, CE2 active-high |
| OE | Output Enable | Asynchronous; drives I/O pins to high-Z when high; may be tied low for reads |
| ZZ | Sleep Mode | Active-high synchronous input; gates internal clock and reduces power while retaining data |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input/output paths |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3 V core supply; VDDQ = 3.3 V I/O supply; separate ground planes recommended |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read/write transitions; enables continuous high-bandwidth bus utilization |
| Internally Synchronized OE | Output buffer enable is fully synchronous; removes need for external OE timing control |
| 4-Word Pipelined Burst | Single address initiates four consecutive data transfers; reduces address bus overhead in streaming applications |
| Individual Byte Write | Four independent 9-bit write masks allow granular memory updates without read-modify-write cycles |
| Three Chip Enables | Supports seamless depth expansion across multiple devices with minimal glue logic |
| JTAG Boundary Scan | IEEE 1149.1-compliant test interface for PCB-level interconnect verification in BGA variants |
Applications
| Packet Buffer Memory | Telecom Line Card Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet or SONET/SDH frames in network switches and routers. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with deterministic 10 ns access. Use Value: ZBT™ eliminates bus turnaround delay, enabling sustained 100 MHz throughput for back-to-back frame handling. | Use Scenario: Caching protocol headers and control metadata in carrier-grade DSLAMs and OLTs. IC Role / Device Role / Timing Role: Synchronous burst-capable memory interfacing directly with FPGA-based traffic managers. Use Value: 4-word linear burst mode matches typical header sizes, reducing address setup overhead per packet. |
| Industrial PLC Data Logging | Medical Imaging Frame Store |
Use Scenario: Buffering real-time sensor data streams in programmable logic controllers with deterministic response. IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing reliable, jitter-free data capture at 100 MHz. Use Value: –40°C to +85°C rating ensures stable operation in uncontrolled cabinet environments. | Use Scenario: Temporary storage of uncompressed ultrasound or MRI pixel data during acquisition bursts. IC Role / Device Role / Timing Role: High-bandwidth memory staging raw image lines before compression or transfer to DDR. Use Value: Pipelined outputs and synchronous byte write enable precise, non-destructive partial-frame updates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-100AXC | 128K × 36-bit QDR SRAM; 100 MHz; differential clock inputs; no JTAG | Requires differential clock routing; lacks burst counter and ZBT™ bus turnaround optimization | Preferred for systems needing QDR dual-data-rate reads but not ZBT™ timing transparency |
| AS7C33128P-10JCN | 128K × 36-bit sync SRAM; 10 ns access; no burst counter; no JTAG; commercial temp only (0°C to +70°C) | Missing ADV/LD, LBO, and BWx controls; no industrial temp or boundary scan support | Lower-cost option for non-critical, ambient-temperature embedded control applications |
Compared with CY7C1371DV33-100AXC and AS7C33128P-10JCN, the 71V3556SA100BGG8 uniquely delivers ZBT™-optimized bus efficiency, integrated burst sequencing, and industrial-grade reliability with JTAG testability - critical for telecom and networking infrastructure.
Availability
71V3556SA100BGG8 is available at Aetrix Electronics and suitable for packet buffering, telecom line-card caching, and industrial data logging requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3556SA100BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3556SA100BGG8 belongs to Renesas' legacy ZBT™ SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in networking and telecom equipment where deterministic bus turnaround and burst efficiency are critical.
FAQ
What is the maximum clock frequency supported by the 71V3556SA100BGG8?
The 71V3556SA100BGG8 is rated for 100 MHz operation, corresponding to a 10 ns clock period and guaranteed 10 ns clock-to-data access time. This specification is validated across the full industrial temperature range (–40°C to +85°C) and under worst-case voltage conditions (VDD = 3.135 V, VDDQ = 3.135 V).
Does the 71V3556SA100BGG8 support JTAG boundary scan testing?
Yes, the 71V3556SA100BGG8 supports IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are implemented - confirmed in BGA package variants (e.g., BGG119). The TQFP-100 package (BGG8 suffix) does not include JTAG signals; they are NC in that variant.
How does the ZBT™ feature eliminate bus turnaround delays in the 71V3556SA100BGG8?
The ZBT™ feature in the 71V3556SA100BGG8 removes dead cycles between read and write operations by eliminating the need for external OE control and synchronizing bus direction internally. Reads and writes transition seamlessly on consecutive clocks, enabling continuous 100 MHz data flow without wait states or bus contention.
What is the function of the ADV/LD and LBO pins on the 71V3556SA100BGG8?
ADV/LD is a synchronous input that loads a new external address when low, or advances the internal burst counter when high. LBO is a static input selecting burst order: low enables linear addressing (0,1,2,3), high enables interleaved (0,2,1,3). Both are essential for configuring 4-word burst behavior in streaming applications.
Can the 71V3556SA100BGG8 operate with different supply voltages for core and I/O?
Yes - the 71V3556SA100BGG8 uses separate supplies: VDD (3.3 V ±5%) powers the core logic, and VDDQ (3.3 V ±5%) powers the I/O buffers. This separation allows independent noise management and meets mixed-voltage system requirements, though both rails must remain within specified tolerances simultaneously.
71V3556SA100BGG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3556SA100BGG8 FAQ
1.How can I place an order for 71V3556SA100BGG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA100BGG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA100BGG8 reliable?
The price and inventory of 71V3556SA100BGG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA100BGG8 is usually 5 days.
3.What payment methods are accepted for 71V3556SA100BGG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA100BGG8 transactions.
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4.How is shipping managed for 71V3556SA100BGG8?
71V3556SA100BGG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA100BGG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA100BGG8?
For technical support, including 71V3556SA100BGG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA100BGG8 requirements.
6.How does Aetrix verify that 71V3556SA100BGG8 is sourced from the original manufacturer or authorized distributors?
All 71V3556SA100BGG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA100BGG8 meets industry standards.
7.What is the process for return or replacement of 71V3556SA100BGG8?
All 71V3556SA100BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA100BGG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA100BGG8 part is unused and in its original packaging.
Return procedure for 71V3556SA100BGG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA100BGG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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AT24C08C-STUM-T
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