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Renesas 71V3556SA100BGGI
- Part No.:
- 71V3556SA100BGGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3556SA100BGGI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,022
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Product details
Overview
71V3556SA100BGGI from IDT (now Renesas) is a 128K × 36-bit, 4.5-Mbit synchronous ZBT™ SRAM with zero bus turnaround, 3.3V core/I/O supply, and pipelined outputs. It supports 166 MHz operation (3.5 ns clock-to-data access), 4-word burst (linear/interleaved), individual byte write control (BW1–BW4), and JTAG boundary scan (IEEE 1149.1). Used in high-speed networking line cards and packet buffering where deterministic latency and bus efficiency are critical.
For engineers reviewing the 71V3556SA100BGGI datasheet, 71V3556SA100BGGI pinout, 71V3556SA100BGGI application, or 71V3556SA100BGGI equivalent, key selection criteria include ZBT™ timing behavior, TQFP-100 package compatibility, industrial temperature range (–40°C to +85°C), 3.3V I/O voltage tolerance, and support for burst counter and sleep mode (ZZ).
Technical Context
The 71V3556SA100BGGI implements a fully synchronous, pipelined architecture with address/control/data registers triggered on the positive clock edge. Its ZBT™ feature eliminates dead cycles between read/write transitions by overlapping bus turnaround with internal memory access.
It integrates a programmable burst counter (controlled by ADV/LD and LBO), three chip enables (CE1, CE2, CE2) for depth expansion, and an optional IEEE 1149.1 JTAG interface. The device uses internally synchronized output buffer enable - eliminating external OE timing constraints - and supports asynchronous OE for output tri-state control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); fixed configuration for this variant |
| Max Clock Frequency | 166 MHz; enables 3.5 ns clock-to-data access time in pipelined mode |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains reduce noise coupling |
| Burst Capability | 4-word burst (linear or interleaved); selected via LBO pin; reduces address bus traffic by 75% per burst |
| Operating Temperature | –40°C to +85°C; qualified for industrial environments without derating |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard); lead-free and RoHS-compliant |
| JTAG Support | IEEE 1149.1 compliant; includes TMS, TDI, TCK, TDO, TRST (optional reset) |
Pinout & Package
71V3556SA100BGGI is packaged in a 100-pin thin quad flatpack (TQFP), JEDEC MO-145AC, 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V3556SA100BGGI" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit synchronous address bus; latched on rising CLK edge when ADV/LD low and chip enabled |
| CLK | Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock division |
| R/W | Read/Write Control | Synchronous signal defining cycle type; data transfer occurs two clocks later |
| ADV/LD | Burst Counter Control | Loads new external address (low) or increments internal burst counter (high); determines burst sequence start point |
| LBO | Burst Order Select | Static input selecting linear (LBO = low) or interleaved (LBO = high) 4-word burst addressing |
| BW1–BW4 | Byte Write Enables | Four independent active-low enables for 9-bit bytes; allows partial writes without read-modify-write |
| CE1, CE2, CE2 | Chip Enables | Three synchronous enables (CE1/CE2 active-low, CE2 active-high); any false condition initiates 2-cycle deselect |
| OE | Output Enable | Asynchronous control; drives I/O pins to high-Z when high; may be tied low for continuous read operation |
| ZZ | Sleep Mode | Active-high synchronous input; gates internal clock and reduces power while retaining data |
| TMS, TDI, TCK, TDO, TRST | JTAG Boundary Scan | IEEE 1149.1 test interface; TRST is optional asynchronous reset; all signals synchronous except TRST |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input and output paths; full 36-bit or byte-selectable writes |
| VDD, VDDQ, VSS | Power/Ground | VDD (core), VDDQ (I/O), and VSS (common ground); decoupling required per JEDEC layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Architecture | Zero bus turnaround eliminates idle cycles between consecutive reads/writes, enabling sustained 166 MHz throughput |
| Pipelined Output Buffer | Internally synchronized OE removes timing dependency on external control, simplifying system-level timing closure |
| 4-Word Burst Mode | Reduces address bus activity by 75% per burst; LBO pin selects linear or interleaved addressing for cache-line alignment |
| Individual Byte Write | BW1–BW4 allow selective 9-bit writes without disturbing other bytes - critical for protocol header updates |
| Three Chip Enables | Supports seamless depth expansion across multiple devices without external logic or address decoding overhead |
| Sleep Mode (ZZ) | Reduces dynamic power by >90% while maintaining data retention; entered synchronously without bus interruption |
Applications
| High-Speed Packet Buffering | Network Processor Interface |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate forwarding. IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM acting as first-level packet buffer with deterministic 3.5 ns read access. Use Value: ZBT™ eliminates bus turnaround penalty, enabling back-to-back reads/writes at 166 MHz - matching OC-48/STM-16 interface rates. | Use Scenario: Interfacing with multi-core network processors requiring fast, wide data exchange for flow classification and QoS tagging. IC Role / Device Role / Timing Role: Synchronous SRAM providing 36-bit parallel interface with pipelined outputs and byte-selectable writes. Use Value: Individual BW1–BW4 enables atomic updates to specific fields (e.g., TTL, DSCP) without full-word rewrite, reducing bus contention. |
| Telecom Line Card Memory | Industrial Real-Time Controller Cache |
Use Scenario: Serving as descriptor memory and temporary frame storage in SONET/SDH framer modules operating in extended temperature environments. IC Role / Device Role / Timing Role: Industrial-grade ZBT SRAM with –40°C to +85°C operation, supporting burst transfers for frame header processing. Use Value: JTAG boundary scan (TMS/TDI/TCK/TDO/TRST) enables in-system testability and fault isolation on dense line card PCBs. | Use Scenario: Acting as deterministic scratchpad memory for motion-control PLCs requiring guaranteed worst-case access timing. IC Role / Device Role / Timing Role: Synchronous SRAM with clock enable (CEN) and sleep mode (ZZ) for precise power-state management during idle cycles. Use Value: CEN suspends all internal registers without affecting outputs; ZZ cuts power >90% while preserving data - extending thermal margin in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-167BZI | 128K × 18-bit (2.25 Mbit), 167 MHz, 3.3V, no ZBT™, no JTAG, different pinout | Lower density and narrower bus; lacks zero-turnaround and boundary scan | Select only if 18-bit bus width suffices and ZBT™/JTAG are unnecessary |
| AS7C3256A-15JCIN | 32K × 36-bit (1.15 Mbit), 15 ns async access, 3.3V, no burst, no pipelining | Asynchronous interface, lower density, no burst or ZBT™; simpler timing but higher latency | Choose for cost-sensitive designs where deterministic 166 MHz throughput is not required |
Compared with CY7C1356BV18-167BZI and AS7C3256A-15JCIN, the 71V3556SA100BGGI delivers higher bandwidth via ZBT™-enabled back-to-back transfers, supports industrial temperature and JTAG testability, and provides full 36-bit burst capability - making it uniquely suited for telecom and high-end embedded buffering.
Availability
71V3556SA100BGGI is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfacing, telecom line card memory, and industrial real-time controller cache requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3556SA100BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.
The 71V3556SA100BGGI belongs to IDT's ZBT™ SRAM product line, designed specifically for applications demanding zero-bus-turnaround performance, deterministic latency, and robust industrial reliability in high-speed data path subsystems.
FAQ
What is the maximum operating frequency of the 71V3556SA100BGGI?
The 71V3556SA100BGGI is rated for up to 166 MHz operation, delivering a 3.5 ns clock-to-data access time in pipelined mode. This frequency is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions, as specified in the official Renesas datasheet revision Aug.06.21.
Does the 71V3556SA100BGGI support JTAG boundary scan?
Yes, the 71V3556SA100BGGI includes optional IEEE 1149.1-compliant JTAG boundary scan with dedicated TMS, TDI, TCK, TDO, and TRST pins. TRST is asynchronous and optional; if unused, it may be left floating due to its internal pull-up. JTAG functionality is confirmed for the "SA" variant per the functional block diagram and pin definitions.
How does the ZBT™ feature improve system performance in the 71V3556SA100BGGI?
The ZBT™ (Zero Bus Turnaround) feature in the 71V3556SA100BGGI eliminates idle cycles between consecutive read and write operations by overlapping bus direction control with memory access. This enables true back-to-back transfers at 166 MHz, increasing effective bandwidth by up to 30% compared to conventional synchronous SRAMs requiring turnaround wait states.
What is the function of the ADV/LD and LBO pins on the 71V3556SA100BGGI?
ADV/LD controls the burst counter: low loads a new external address, high advances the internal counter. LBO selects burst order - low enables linear addressing (0,1,2,3), high enables interleaved (0,2,3,1). Both are synchronous inputs used exclusively in burst mode, and LBO must remain static during operation per the datasheet specification.
Can the 71V3556SA100BGGI operate in sleep mode, and how is it activated?
Yes, the 71V3556SA100BGGI supports sleep mode via the ZZ pin. When ZZ is driven high synchronously (sampled on rising CLK edge), the internal clock is gated and power consumption drops >90% while data retention is guaranteed. Sleep mode is fully compatible with all other control signals and requires no additional sequencing beyond asserting ZZ high.
71V3556SA100BGGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3556SA100BGGI FAQ
1.How can I place an order for 71V3556SA100BGGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA100BGGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA100BGGI reliable?
The price and inventory of 71V3556SA100BGGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA100BGGI is usually 5 days.
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Once your 71V3556SA100BGGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA100BGGI?
For technical support, including 71V3556SA100BGGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA100BGGI requirements.
6.How does Aetrix verify that 71V3556SA100BGGI is sourced from the original manufacturer or authorized distributors?
All 71V3556SA100BGGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA100BGGI meets industry standards.
7.What is the process for return or replacement of 71V3556SA100BGGI?
All 71V3556SA100BGGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA100BGGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA100BGGI part is unused and in its original packaging.
Return procedure for 71V3556SA100BGGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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