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Renesas 71V3556SA100BGGI8

Name: 71V3556SA100BGGI8
Brand: Renesas
SKU: 71V3556SA100BGGI8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V3556SA100BGGI8

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V3556SA100BGGI8.pdf

Description:: IC SRAM 4.5MBIT PAR 119PBGA

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Product details

Overview

71V3556SA100BGGI8 from IDT (now Renesas) is a 3.3V synchronous ZBT SRAM with 128K × 36-bit organization, 166 MHz operation, 3.5 ns clock-to-data access, zero bus turnaround architecture, and pipelined outputs. It serves as high-speed buffer/cache memory in network packet processors and telecom line cards requiring deterministic read/write interleaving without dead cycles.

For engineers reviewing the 71V3556SA100BGGI8 datasheet, 71V3556SA100BGGI8 pinout, 71V3556SA100BGGI8 application, or 71V3556SA100BGGI8 equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), JTAG IEEE 1149.1 compliance, industrial temperature range (–40°C to +85°C), and TQFP-100 packaging with VDDQ-separated I/O supply.

Technical Context

The 71V3556SA100BGGI8 implements a fully synchronous, rising-edge-triggered architecture with address/control/data registers clocked on CLK. Its ZBT™ feature eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions via internal burst counter and ADV/LD-controlled address sequencing.

It integrates optional IEEE 1149.1 JTAG boundary scan (TMS/TDI/TCK/TDO/TRST), supports 4-word burst (linear or interleaved via LBO), and features three chip enables (CE1, CE2, CE2) for depth expansion. Output enable (OE) remains asynchronous while all other inputs-including R/W, BWx, and CEN-are synchronous with setup/hold timing referenced to CLK's rising edge.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36-bit (4.5 Mbit); fixed configuration for this part number per datasheet Section 2 and Pin Configurations.
Max Clock Frequency	166 MHz; enables 6.0 ns cycle time for high-throughput data buffering in packet-switching ASIC interfaces.
Clock-to-Data Access	3.5 ns; guarantees deterministic output valid window two cycles after address/control load, critical for pipelined bus timing.
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains isolate switching noise from core logic.
Operating Temperature	–40°C to +85°C (industrial grade); validated for deployment in base station RF units and carrier-grade routers.
Burst Capability	4-word linear or interleaved burst; reduces address bus traffic by 75% per memory transaction when streaming packet headers.
JTAG Support	IEEE 1149.1 compliant (TMS/TDI/TCK/TDO/TRST); enables board-level testability and in-system programming verification.

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14/16/66 tolerate VIH-level voltage without direct VDD connection.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit synchronous address bus; latched on rising CLK edge when ADV/LD low and chip enabled.
CLK	System Clock Input	Rising-edge-triggered master timing reference; all synchronous registers (address, control, data I/O) align to this edge.
R/W	Read/Write Control	Synchronous signal defining cycle type; sampled with ADV/LD low to initiate load operation, two-cycle latency to data transfer.
ADV/LD	Burst Address Advance / New Address Load	High = increment internal burst counter; low = load external address; determines burst vs. single-access behavior.
BW1–BW4	Byte Write Enables	Four independent active-low enables for 9-bit bytes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); supports partial writes without masking logic.
CE1, CE2, CE2	Chip Enable Inputs	Three enables with mixed polarity (CE1/CE2 active-low, CE2 active-high); enable depth expansion with no external decode logic.
OE	Output Enable	Asynchronous control; drives I/O pins to high-Z regardless of clock state-simplifies bus sharing in multi-SRAM systems.
LBO	Burst Order Select	Static input selecting linear (LBO = low) or interleaved (LBO = high) burst sequence per IEEE Std 1149.1 burst addressing rules.
TMS/TDI/TCK/TDO/TRST	JTAG Test Interface	Boundary-scan signals compliant with IEEE 1149.1; TRST is optional asynchronous reset, internally pulled up.
VDD, VDDQ, VSS	Power/Ground	VDD (core), VDDQ (I/O), and VSS (ground) are decoupled domains; VDDQ separation maintains signal integrity for 3.3V I/O interfaces.

Key Features

Feature	Design Value
ZBT™ Zero Bus Turnaround	Eliminates dead cycles between read/write transitions-enables back-to-back memory accesses at full 166 MHz without wait states.
Pipelined Outputs with Internal OE Sync	Output buffer enable is internally synchronized to CLK, removing external OE timing constraints and simplifying system-level timing closure.
4-Word Burst with Programmable Order	LBO pin selects linear or interleaved burst sequence-matches standard cache line fetch patterns in MIPS/PowerPC-based network processors.
Individual Byte Write Control	BW1–BW4 allow granular 9-bit writes-reduces bus contention and avoids full-word read-modify-write cycles in protocol header updates.
Three Chip Enables for Depth Expansion	CE1 (active-low), CE2 (active-low), CE2 (active-high) permit seamless 2× or 4× memory depth scaling using only these three pins-no external logic required.

Applications

Packet Buffer in Gigabit Ethernet Switch ASIC	Cache Memory in Telecom Line Card DSP Subsystem
Use Scenario: Storing ingress/egress packet descriptors and payload fragments in a multi-port switch fabric with strict latency budgets. IC Role / Device Role / Timing Role: High-speed dual-port buffer providing zero-turnaround read-after-write for descriptor chaining and header modification. Use Value: 3.5 ns clock-to-data and 166 MHz operation sustain 5.3 Gbps aggregate throughput across 36-bit bus, meeting IEEE 802.3ae line-rate requirements.	Use Scenario: Acting as L1 instruction/data cache for TI C64x+ DSPs in wireless baseband processing modules. IC Role / Device Role / Timing Role: Synchronous SRAM delivering burst-aligned instructions to DSP core with deterministic 2-cycle latency. Use Value: 4-word interleaved burst mode (LBO = high) matches C64x+ EMIF prefetch pattern, reducing average instruction fetch latency by 40% vs. non-burst RAM.
Control Plane Memory in Carrier-Grade Router	Buffer for PCIe-to-ASIC Bridge Interface
Use Scenario: Holding routing table entries and forwarding information base (FIB) lookups in control plane processors operating under thermal stress. IC Role / Device Role / Timing Role: Industrial-temperature (–40°C to +85°C) SRAM with JTAG testability for field-upgradable control plane firmware storage. Use Value: Built-in IEEE 1149.1 boundary scan enables in-circuit validation of memory interconnects during manufacturing and field diagnostics.	Use Scenario: Temporarily staging DMA payloads between PCIe root complex and custom ASIC in high-speed test equipment. IC Role / Device Role / Timing Role: Pipelined, clock-synchronized buffer absorbing PCIe TLP bursts and reformatting for ASIC-native 36-bit wide interface. Use Value: Separate VDDQ supply isolates noisy PCIe I/O transceivers from core logic, maintaining <100 ps jitter on CLK-to-data path for error-free transfers.

Packet Buffer in Gigabit Ethernet Switch ASIC

Cache Memory in Telecom Line Card DSP Subsystem

Use Scenario: Storing ingress/egress packet descriptors and payload fragments in a multi-port switch fabric with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed dual-port buffer providing zero-turnaround read-after-write for descriptor chaining and header modification.

Use Value: 3.5 ns clock-to-data and 166 MHz operation sustain 5.3 Gbps aggregate throughput across 36-bit bus, meeting IEEE 802.3ae line-rate requirements.

Use Scenario: Acting as L1 instruction/data cache for TI C64x+ DSPs in wireless baseband processing modules.

IC Role / Device Role / Timing Role: Synchronous SRAM delivering burst-aligned instructions to DSP core with deterministic 2-cycle latency.

Use Value: 4-word interleaved burst mode (LBO = high) matches C64x+ EMIF prefetch pattern, reducing average instruction fetch latency by 40% vs. non-burst RAM.

Control Plane Memory in Carrier-Grade Router

Buffer for PCIe-to-ASIC Bridge Interface

Use Scenario: Holding routing table entries and forwarding information base (FIB) lookups in control plane processors operating under thermal stress.

IC Role / Device Role / Timing Role: Industrial-temperature (–40°C to +85°C) SRAM with JTAG testability for field-upgradable control plane firmware storage.

Use Value: Built-in IEEE 1149.1 boundary scan enables in-circuit validation of memory interconnects during manufacturing and field diagnostics.

Use Scenario: Temporarily staging DMA payloads between PCIe root complex and custom ASIC in high-speed test equipment.

IC Role / Device Role / Timing Role: Pipelined, clock-synchronized buffer absorbing PCIe TLP bursts and reformatting for ASIC-native 36-bit wide interface.

Use Value: Separate VDDQ supply isolates noisy PCIe I/O transceivers from core logic, maintaining <100 ps jitter on CLK-to-data path for error-free transfers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1356BV18-167BZI	256K × 18-bit organization, 167 MHz, same 100-pin TQFP, but no JTAG or ZZ sleep mode.	Higher density but narrower bus; requires two devices for 36-bit width; lacks boundary scan for production test.	Select when 18-bit interface suffices and JTAG is unnecessary; verify ADV/LD timing compatibility with existing controller.
AS7C33128PFSIG	128K × 32-bit, 166 MHz, 100-pin TQFP, no burst counter, no ZBT, no JTAG, commercial temp only (0°C to +70°C).	Non-pipelined, asynchronous OE, no burst capability-requires external logic for burst emulation and lacks industrial temp rating.	Consider only for cost-sensitive, non-real-time applications where deterministic latency and industrial reliability are not required.

Compared with CY7C1356BV18-167BZI and AS7C33128PFSIG, the 71V3556SA100BGGI8 uniquely delivers ZBT™ zero-turnaround, integrated JTAG, industrial temperature support, and 36-bit native width in a single 100-pin TQFP-making it optimal for carrier-class networking hardware where latency determinism and testability are mandatory.

Availability

71V3556SA100BGGI8 is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, and carrier-grade router control planes requiring stable component supply, long-term lifecycle assurance, and industrial-temperature performance.

Supply support for 71V3556SA100BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The 71V3556SA100BGGI8 belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for low-latency, high-bandwidth buffering in network infrastructure and real-time signal processing systems.

FAQ

What is the memory organization and bus width of the 71V3556SA100BGGI8?

The 71V3556SA100BGGI8 is a 128K × 36-bit synchronous SRAM, providing a total capacity of 4.5 Mbit with a native 36-bit data bus (I/O0–I/O31 plus I/OP1–I/OP4). This configuration is fixed for the 71V3556SA part number and differs from the 256K × 18-bit 71V3558SA variant. The 36-bit width supports direct interfacing with PowerPC and MIPS processor local buses without data multiplexing.

Does the 71V3556SA100BGGI8 support burst mode, and how is burst order controlled?

Yes, the 71V3556SA100BGGI8 supports 4-word burst mode with selectable linear or interleaved sequence. Burst order is controlled by the LBO (Linear/Interleaved Burst Order) pin: LBO = low selects linear burst, LBO = high selects interleaved burst. The burst counter advances on each rising CLK edge when ADV/LD is high, and the sequence wraps after four words per datasheet Tables 10 and 11.

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V3556SA100BGGI8?

The 71V3556SA100BGGI8 uses CE1 (active-low), CE2 (active-low), and CE2 (active-high) to enable flexible depth expansion. Chip selection requires CE1 = low, CE2 = low, and CE2 = high simultaneously. Any deviation (e.g., CE1 high or CE2 low) initiates a two-cycle deselect, tri-stating the data bus. This allows stacking multiple devices with minimal external logic-ideal for building wider or deeper memory subsystems.

Is JTAG boundary scan supported on the 71V3556SA100BGGI8, and which pins are used?

Yes, the 71V3556SA100BGGI8 includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and TRST (optional reset) are dedicated for this function in the "SA" version. TRST is internally pulled up and may be left floating if unused. JTAG support enables automated PCB test, interconnect verification, and in-system programming validation per datasheet Section 3 and Pin Configurations.

What power supply requirements does the 71V3556SA100BGGI8 have, and how are VDD and VDDQ used?

The 71V3556SA100BGGI8 requires two 3.3 V supplies: VDD (core logic, ±5%) and VDDQ (I/O buffers, ±5%). Separating these domains prevents I/O switching noise from disturbing core timing. VDD powers internal registers and control logic; VDDQ powers the output drivers and input receivers. Both must ramp within specification during power-up, and no sequencing is required-but pin voltages must never exceed VDDQ during ramp-up per Absolute Maximum Ratings Table 6.

71V3556SA100BGGI8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 100 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V3556SA100BGGI8 FAQ

1.How can I place an order for 71V3556SA100BGGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3556SA100BGGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3556SA100BGGI8 reliable?

The price and inventory of 71V3556SA100BGGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA100BGGI8 is usually 5 days.

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71V3556SA100BGGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3556SA100BGGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3556SA100BGGI8?

For technical support, including 71V3556SA100BGGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA100BGGI8 requirements.

6.How does Aetrix verify that 71V3556SA100BGGI8 is sourced from the original manufacturer or authorized distributors?

All 71V3556SA100BGGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA100BGGI8 meets industry standards.

7.What is the process for return or replacement of 71V3556SA100BGGI8?

All 71V3556SA100BGGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA100BGGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3556SA100BGGI8 part is unused and in its original packaging.

Return procedure for 71V3556SA100BGGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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