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Renesas 71V3556SA100BQ
- Part No.:
- 71V3556SA100BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3556SA100BQ.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,051
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Product details
Overview
71V3556SA100BQ from Renesas is a 128K × 36-bit, 4.5-Mbit, 3.3V synchronous ZBT™ SRAM with zero bus turnaround, pipelined outputs, and 4-word burst capability (linear/interleaved). It operates at 166 MHz with 3.5 ns clock-to-data access, supports individual byte write control (BW1–BW4), and features JTAG IEEE 1149.1 compliance for boundary scan. It is used in high-speed networking buffers and packet-switching ASIC/FPGA interfaces.
For engineers reviewing the 71V3556SA100BQ datasheet, 71V3556SA100BQ pinout, 71V3556SA100BQ application, or 71V3556SA100BQ equivalent, key selection criteria include ZBT™ bus turnaround elimination, 100-pin TQFP package compatibility, industrial temperature support (–40°C to +85°C), and synchronous 3.3V I/O with VDDQ separation.
Technical Context
The 71V3556SA100BQ implements a fully pipelined architecture with positive-edge-triggered address, data, and control registers. Its ZBT™ feature eliminates dead cycles between read/write transitions by synchronizing bus direction internally-no external OE timing control required.
It integrates a 4-word burst counter with LBO-selectable linear or interleaved addressing, ADV/LD-controlled address load or counter increment, and three chip enables (CE1, CE2, CE2) supporting depth expansion. Optional JTAG (TMS/TDI/TCK/TDO/TRST) is implemented per IEEE 1149.1 and available in BGA/fBGA packages; the 100-pin TQFP variant (BQ suffix) excludes TRST but retains TMS/TDI/TCK/TDO.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via configuration pin mapping |
| Max Clock Frequency | 166 MHz; enables 3.5 ns clock-to-data access for real-time packet buffering |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); independent power domains reduce noise coupling |
| Burst Mode | 4-word burst (linear or interleaved); LBO pin selects sequence; reduces address bus traffic by 75% |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for telecom infrastructure and base station applications |
| Package | 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm; JEDEC standard PKG100 footprint |
| JTAG Support | IEEE 1149.1 compliant (TMS/TDI/TCK/TDO); TRST omitted in TQFP; full boundary scan for production test |
Pinout & Package
71V3556SA100BQ is packaged in a JEDEC-standard 100-pin TQFP (PKG100), 14 mm × 20 mm body, 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14, 16, and 66 tolerate VIH-level voltage without direct VDD connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs; 18-bit address bus for 128K × 36 configuration (A0–A16 active; A17 unused) |
| CLK | System Clock Input | Rising-edge-triggered master clock; all synchronous operations referenced to this edge |
| R/W | Read/Write Control | Synchronous signal defining cycle type; sampled with ADV/LD low to initiate load operation |
| ADV/LD | Advance Burst / Load Address | Synchronous control: low loads new external address; high advances internal burst counter |
| LBO | Linear/Interleaved Burst Order | Static input: low = linear burst (0,1,2,3); high = interleaved (0,2,1,3); must remain stable during operation |
| BW1–BW4 | Byte Write Enables | Active-low synchronous controls for 9-bit bytes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4) |
| CE1, CE2, CE2 | Chip Enables | Three enables: CE1/CE2 active-low, CE2 active-high; any false enable initiates 2-cycle deselect |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous bus; registered input/output paths ensure timing predictability |
| OE | Output Enable | Asynchronous; low enables outputs, high forces high-impedance; may be tied low for simplified design |
| CEN | Clock Enable | Synchronous suspend: high blocks CLK propagation; registers retain state; no output change |
| VDD, VDDQ, VSS | Power/Ground | VDD = core supply (3.3 V); VDDQ = I/O supply (3.3 V); VSS = common ground; multiple pins per domain |
| TMS, TDI, TCK, TDO | JTAG Test Interface | IEEE 1149.1 boundary scan signals; functional in SA version; TRST not present in TQFP package |
| ZZ | Sleep Mode | Synchronous input (pin 64); high gates internal clock and minimizes power while retaining data |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read/write transitions-enables continuous burst streaming without bus idle time |
| Pipelined Output Buffer | Internally synchronized OE replacement; removes need for precise OE timing control in high-speed systems |
| 4-Word Burst Counter | Reduces address bus activity by 75%; LBO pin selects linear or interleaved sequence for cache-line alignment |
| Individual Byte Write Control | BW1–BW4 allow selective 9-bit writes; avoids full-word overwrites and reduces memory controller complexity |
| Three Chip Enables | Supports seamless depth expansion across multiple devices without external logic or glue logic |
| Industrial Temperature Range | Validated operation from –40°C to +85°C; suitable for uncooled telecom and industrial control environments |
Applications
| High-Speed Packet Buffering | Network Processor Interface |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in line-rate switches. IC Role / Device Role / Timing Role: Dual-port buffer with zero-turnaround read/write; absorbs bursty ingress traffic while servicing egress at deterministic latency. Use Value: 3.5 ns clock-to-data and 166 MHz throughput sustain 5.3 Gbps aggregate bandwidth (36-bit × 166 MHz). |
Use Scenario: Interfacing FPGA-based network processors to external memory for header parsing and lookup tables. IC Role / Device Role / Timing Role: Synchronous SRAM acting as instruction/data cache with pipelined address-to-data path. Use Value: Pipelined registers and burst counter reduce FPGA logic overhead; ADV/LD simplifies burst address generation in RTL. |
| Baseband Signal Processing | Industrial PLC Data Logging |
|
Use Scenario: Temporary storage of OFDM symbol samples in LTE/5G baseband subsystems. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory for FFT/IFFT intermediate results with deterministic access. Use Value: 128K × 36 organization matches typical symbol buffer depth; ZZ sleep mode cuts idle power by >70%. |
Use Scenario: Real-time logging of sensor data streams in programmable logic controllers with deterministic jitter requirements. IC Role / Device Role / Timing Role: Deterministic-access buffer ensuring worst-case latency ≤7.2 ns (2-cycle pipeline + 3.5 ns tCD). Use Value: Industrial temp rating and VDD/VDDQ separation ensure reliability under wide-voltage industrial rails and EMI stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-167BZI | 256K × 18-bit, 167 MHz, 3.3V; no ZBT™; uses conventional OE control; no JTAG | Higher density but lower bandwidth efficiency due to bus turnaround cycles; lacks burst counter and sleep mode | Select when higher capacity is prioritized over zero-turnaround performance and testability |
| AS7C33128PFSIG | 128K × 32-bit, 166 MHz, 3.3V; asynchronous OE; no burst counter, no JTAG, no ZZ | Compatible width and speed but lacks ZBT™, pipelined OE, and advanced power management | Select for cost-sensitive designs where full ZBT™ functionality and boundary scan are unnecessary |
Compared with CY7C1356BV18-167BZI and AS7C33128PFSIG, the 71V3556SA100BQ delivers superior system-level throughput via ZBT™ and burst capability, enables production testability with JTAG, and supports low-power operation via ZZ-making it optimal for latency-critical, high-reliability embedded systems.
Availability
71V3556SA100BQ is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfacing, baseband signal processing, and industrial PLC data logging requiring stable component supply across extended temperature ranges.
Supply support for 71V3556SA100BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The 71V3556SA100BQ belongs to Renesas' ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-throughput networking and signal processing systems requiring deterministic timing and industrial-grade reliability.
FAQ
What is the memory organization and density of the 71V3556SA100BQ?
The 71V3556SA100BQ is configured as 128K × 36-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. It supports dual configuration: 128K × 36-bit (default) or 256K × 18-bit via pin strapping. This flexibility allows optimization for either wider data paths or deeper memory depth depending on system architecture requirements. The 71V3556SA100BQ achieves this using a high-performance CMOS process and JEDEC-compliant 100-pin TQFP packaging.
Does the 71V3556SA100BQ support JTAG boundary scan, and which pins are used?
Yes, the 71V3556SA100BQ supports IEEE 1149.1-compliant JTAG boundary scan as part of its "SA" variant designation. In the 100-pin TQFP package (BQ suffix), the functional JTAG pins are TMS (pin 97), TDI (pin 98), TCK (pin 99), and TDO (pin 100). TRST is omitted in this package but available in BGA/fBGA variants. All JTAG signals are synchronous and include internal pull-ups (TMS/TDI/TCK) for robust initialization.
How does the ZBT™ feature eliminate bus turnaround cycles in the 71V3556SA100BQ?
The 71V3556SA100BQ's ZBT™ (Zero Bus Turnaround) architecture internally manages bus direction control, eliminating the need for external OE timing or dead cycles between read and write operations. When transitioning from write to read (or vice versa), the device synchronously switches direction within the same clock domain-ensuring continuous data flow. This is achieved via pipelined output buffers and internal synchronization logic, enabling sustained 166 MHz throughput without bus idling. The 71V3556SA100BQ thus delivers deterministic latency critical for real-time packet processing.
What is the function of the ADV/LD and LBO pins on the 71V3556SA100BQ?
ADV/LD (pin 17) is a synchronous control that determines whether the internal burst counter loads a new external address (ADV/LD = LOW) or increments (ADV/LD = HIGH). LBO (pin 32) selects burst order: LOW enables linear sequence (0,1,2,3); HIGH enables interleaved (0,2,1,3). Both pins are sampled on the rising CLK edge and must remain static during burst operation. Their combined use allows the 71V3556SA100BQ to support cache-line-aligned memory access patterns common in networking and DSP applications.
What power management features does the 71V3556SA100BQ offer?
The 71V3556SA100BQ provides two key power management features: Clock Enable (CEN) and Sleep Mode (ZZ). CEN (pin 14) suspends all synchronous operation when asserted high-retaining register state without clock propagation. ZZ (pin 64) gates the internal clock and reduces dynamic power consumption to minimum while guaranteeing data retention. Both features are synchronous and validated across the full industrial temperature range (–40°C to +85°C), making the 71V3556SA100BQ suitable for energy-constrained embedded systems.
71V3556SA100BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3556SA100BQ FAQ
1.How can I place an order for 71V3556SA100BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA100BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA100BQ reliable?
The price and inventory of 71V3556SA100BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA100BQ is usually 5 days.
3.What payment methods are accepted for 71V3556SA100BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA100BQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3556SA100BQ?
71V3556SA100BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA100BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA100BQ?
For technical support, including 71V3556SA100BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA100BQ requirements.
6.How does Aetrix verify that 71V3556SA100BQ is sourced from the original manufacturer or authorized distributors?
All 71V3556SA100BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA100BQ meets industry standards.
7.What is the process for return or replacement of 71V3556SA100BQ?
All 71V3556SA100BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA100BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA100BQ part is unused and in its original packaging.
Return procedure for 71V3556SA100BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA100BQ Tags
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M24C02-WMN6TP
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