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Renesas 71V3556SA100BQ8
- Part No.:
- 71V3556SA100BQ8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3556SA100BQ8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V3556SA100BQ8 from IDT (now Renesas) is a 128K × 36-bit, 4.5-Mbit synchronous ZBT™ SRAM with zero bus turnaround, pipelined outputs, and 3.3V core/I/O supply. It operates at 166 MHz (3.5 ns clock-to-data access), supports 4-word interleaved or linear burst, individual byte write control (BW1–BW4), and JTAG boundary scan (IEEE 1149.1). It is used in high-speed networking packet buffers and telecom line-card data path memory.
For engineers reviewing the 71V3556SA100BQ8 datasheet, 71V3556SA100BQ8 pinout, 71V3556SA100BQ8 application, or 71V3556SA100BQ8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O voltage tolerance, industrial temperature range support (–40°C to +85°C), and JTAG-enabled testability for board-level validation.
Technical Context
The 71V3556SA100BQ8 implements a fully synchronous, positive-edge-triggered architecture with registered address, control, and data paths. Its ZBT™ feature eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address loading or incrementing.
It integrates three chip enables (CE1, CE2 active-low; CE2 active-high), asynchronous OE, synchronous CEN, and static LBO for burst order selection. The device includes optional IEEE 1149.1 JTAG interface with TMS/TDI/TCK/TDO/TRST pins, and supports sleep mode (ZZ input) for low-power retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports x36 configuration only - defines data bus width and address depth for system interconnect. |
| Max Clock Frequency | 166 MHz - enables 6 ns cycle time; determines maximum sustained throughput in burst-mode applications. |
| Clock-to-Data Access | 3.5 ns - fixed latency from CLK rising edge to valid output; critical for timing closure in high-speed synchronous buses. |
| Supply Voltage | VDD = VDDQ = 3.3 V ±5% - requires single 3.3V rail for core and I/O; eliminates level-shifting in 3.3V systems. |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments; ensures reliability in base station and router deployments. |
| Burst Capability | 4-word linear or interleaved - reduces address bus activity by 75% per burst; improves bus efficiency in sequential access patterns. |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing of PCB interconnects without physical probe access. |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14/16/66 tolerate VIH-level inputs without direct VDD connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; A0–A16 used for 128K × 36 addressing; A17 is NC in this configuration. |
| CLK | Clock Input | Primary timing reference; all synchronous registers triggered on rising edge; defines pipeline stage boundaries. |
| R/W | Read/Write Control | Synchronous signal determining access type; sampled with ADV/LD to initiate load cycle two clocks later. |
| ADV/LD | Advance Burst / Load Address | Controls burst counter (HIGH) or loads new external address (LOW); enables seamless burst chaining. |
| BW1–BW4 | Byte Write Enables | Active-low per-byte controls for I/O[0:7]/I/OP1 through I/O[24:31]/I/OP4; allows partial-word writes without masking logic. |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 active-low, CE2 active-high); enable depth expansion with no external glue logic. |
| OE | Output Enable | Asynchronous; tri-states outputs immediately when HIGH - simplifies bus sharing without timing coordination. |
| LBO | Linear/Interleaved Burst Order | Static input selecting burst sequence; sets memory access pattern for cache-line or DMA-aligned transfers. |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | IEEE 1149.1 boundary-scan chain; TRST is optional asynchronous reset; all signals synchronous except TRST. |
| ZZ | Sleep Mode Input | Active-high synchronous entry into low-power retention mode; gates internal clock and reduces IDD to <100 µA. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; each byte pair has dedicated parity pin (I/OPx) for ECC-capable systems. |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3V core supply; VDDQ = 3.3V I/O supply; separate rails allow noise isolation between logic and drivers. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates idle cycles between consecutive reads/writes - enables 100% bus utilization in back-to-back memory transactions. |
| Internally Synchronized OE | Removes need for external OE timing control - simplifies interface design and eliminates race conditions on shared data buses. |
| Pipelined Output Registers | Two-cycle deterministic latency from address load to data output - enables precise timing budgeting in FPGA/ASIC memory controllers. |
| Individual Byte Write Control | Four independent BWx signals allow selective 9-bit byte updates - avoids full-word read-modify-write in protocol header manipulation. |
| Three Chip Enables | Supports seamless depth expansion up to 8 devices without address decoding logic - reduces BOM count and PCB area. |
| JTAG Boundary Scan (IEEE 1149.1) | Enables automated PCB interconnect testing pre- and post-assembly - critical for high-reliability telecom and industrial boards. |
Applications
| Packet Buffer Memory | Network Processor Data Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with burst capability to absorb variable frame sizes and backpressure. Use Value: 166 MHz operation and ZBT™ enable line-rate buffering at 10 Gbps+ without FIFO stalls or bus contention. |
Use Scenario: Acting as instruction/data cache for multi-threaded network processors executing deep-pipeline packet inspection. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 3.5 ns access to cached microcode and flow-state tables. Use Value: Pipelined outputs and registered control reduce controller timing margin requirements, easing ASIC/FPGA integration. |
| Telecom Line Card Buffer | Industrial PLC Real-Time Data Log |
Use Scenario: Temporary storage of TDM voice channels and signaling messages in carrier-grade DSLAMs and OLTs. IC Role / Device Role / Timing Role: Industrial-temp-rated memory supporting burst-mode DMA transfers between framer and host processor. Use Value: –40°C to +85°C rating and JTAG testability ensure field reliability and manufacturability in uncontrolled environments. |
Use Scenario: Logging sensor timestamps and actuator commands in safety-critical programmable logic controllers with deterministic response. IC Role / Device Role / Timing Role: Non-volatile-retentive buffer (via ZZ sleep mode) preserving last-known state during brownouts. Use Value: Sleep mode draws <100 µA while retaining data - extends backup battery life beyond 72 hours in fail-safe logging. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-167AXC | 256K × 18-bit organization; 167 MHz max; no JTAG; different pinout (100-pin TQFP but incompatible signal mapping). | Requires redesign of address/data bus routing and control logic; lacks burst counter and ZBT™ optimization. | Select only if x18 interface matches existing controller and JTAG/testability is not required. |
| AS7C33128PFSI-10BIN | 128K × 32-bit; 10 ns async access; no clock, no burst, no ZBT™; CMOS-compatible TTL levels. | Not pin- or function-compatible; cannot replace in synchronous, high-speed, burst-oriented designs. | Consider only for legacy async bus upgrades where timing margin exists and burst efficiency is non-critical. |
Compared with CY7C1356BV18-167AXC and AS7C33128PFSI-10BIN, the 71V3556SA100BQ8 uniquely delivers ZBT™-optimized zero-turnaround timing, integrated JTAG, and 36-bit x128K density in a single TQFP-100 package - making it irreplaceable for new designs requiring deterministic high-throughput memory interfacing.
Availability
71V3556SA100BQ8 is available at Aetrix Electronics and suitable for packet buffering, network processor caching, and telecom line-card memory applications requiring stable component supply across extended product lifecycles.
Supply support for 71V3556SA100BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71V3556SA100BQ8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet-processing systems such as routers, switches, and baseband units.
FAQ
What is the memory organization and density of the 71V3556SA100BQ8?
The 71V3556SA100BQ8 is configured as 128K × 36-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. This organization supports 36-bit data buses and uses 17 address lines (A0–A16) for full addressing; A17 is no-connect in this variant. It is not configurable as 256K × 18-bit - that is reserved for the 71V3558SA family.
Does the 71V3556SA100BQ8 support JTAG boundary scan, and which pins implement it?
Yes, the 71V3556SA100BQ8 supports IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST (pin 64 on latest die revision) implement the test interface. These pins are functional in the "SA" version and marked NC in non-JTAG variants. TRST is internally pulled up and may be left floating if unused.
How does the ZBT™ feature eliminate dead cycles in the 71V3556SA100BQ8?
The 71V3556SA100BQ8 achieves zero bus turnaround by decoupling read/write initiation from data transfer timing. Address and control signals are latched on one clock edge, and data appears exactly two cycles later - regardless of direction change. This eliminates the bus idle period otherwise needed to reconfigure direction control, enabling back-to-back read/write bursts at full clock rate.
What is the role of the ADV/LD and LBO pins in burst operation of the 71V3556SA100BQ8?
In the 71V3556SA100BQ8, ADV/LD determines whether the internal burst counter advances (HIGH) or loads a new external address (LOW). LBO selects burst order: LOW enables linear sequence (0,1,2,3), HIGH enables interleaved (0,2,3,1). Both are sampled synchronously and must remain stable during burst execution to prevent address misalignment.
Can the 71V3556SA100BQ8 operate in low-power sleep mode, and how is it controlled?
Yes, the 71V3556SA100BQ8 supports synchronous sleep mode via the ZZ pin. When ZZ is driven HIGH, the internal clock is gated and core power drops to <100 µA while retaining memory contents. ZZ is synchronous and must be asserted on a rising CLK edge; it has an internal pulldown resistor and requires no external bias.
71V3556SA100BQ8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3556SA100BQ8 FAQ
1.How can I place an order for 71V3556SA100BQ8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA100BQ8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA100BQ8 reliable?
The price and inventory of 71V3556SA100BQ8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA100BQ8 is usually 5 days.
3.What payment methods are accepted for 71V3556SA100BQ8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA100BQ8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3556SA100BQ8?
71V3556SA100BQ8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA100BQ8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA100BQ8?
For technical support, including 71V3556SA100BQ8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA100BQ8 requirements.
6.How does Aetrix verify that 71V3556SA100BQ8 is sourced from the original manufacturer or authorized distributors?
All 71V3556SA100BQ8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA100BQ8 meets industry standards.
7.What is the process for return or replacement of 71V3556SA100BQ8?
All 71V3556SA100BQ8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA100BQ8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA100BQ8 part is unused and in its original packaging.
Return procedure for 71V3556SA100BQ8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA100BQ8 Tags
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M24C02-WMN6TP
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