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Renesas 71V3556SA100BQG8

Part No.:
71V3556SA100BQG8
Manufacturer:
Renesas
Category:
Memory
Package:
165-TBGA
Datasheet:
Aetrix71V3556SA100BQG8.pdf
Description:
IC SRAM 4.5MBIT PAR 165CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,380

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Product details

Overview

71V3556SA100BQG8 from Renesas is a 3.3V synchronous ZBT SRAM with 128K × 36-bit organization (4.5 Mbit), 100 MHz clock speed, 3.5 ns clock-to-data access, zero bus turnaround architecture, and JEDEC-standard 100-pin TQFP package. It serves as a high-speed pipelined memory buffer in network packet processors and telecom line cards requiring burst reads/writes without dead cycles.

For engineers reviewing the 71V3556SA100BQG8 datasheet, 71V3556SA100BQG8 pinout, 71V3556SA100BQG8 application, or 71V3556SA100BQG8 equivalent, key selection criteria include ZBT™ timing compliance, 4-word burst capability (linear/interleaved), individual byte write control (BW1–BW4), JTAG IEEE 1149.1 support, and industrial temperature operation (–40°C to +85°C).

Technical Context

The 71V3556SA100BQG8 implements a fully synchronous, positive-edge-triggered architecture with pipelined address/control/data registers. Its ZBT™ feature eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions without idle cycles.

It integrates an on-chip 4-word burst counter controlled by ADV/LD and LBO pins, supports interleaved or linear burst sequences, and includes optional boundary-scan JTAG (TMS/TDI/TCK/TDO/TRST) compliant with IEEE 1149.1 - available only in BGA variants but confirmed for SA-series including this TQFP part per functional block diagram and pin definitions.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization128K × 36-bit (4.5 Mbit); supports depth expansion via three chip enables (CE1, CE2, CE2).
Clock Frequency100 MHz maximum; enables 10 ns clock period timing for high-throughput data buffering.
Access Time3.5 ns clock-to-data (tCD); guarantees deterministic output valid window for synchronous system integration.
Burst Capability4-word burst (linear or interleaved); reduces address bus traffic and improves bandwidth efficiency in sequential access patterns.
Supply Voltage3.3 V ±5% core (VDD) and I/O (VDDQ); compatible with standard 3.3V logic families and mixed-voltage board designs.
Operating Temperature–40°C to +85°C industrial grade; validated for deployment in base station, router, and industrial control environments.
JTAG SupportIEEE 1149.1-compliant boundary scan (TMS/TDI/TCK/TDO/TRST); enables in-system testability and debug without external probes.

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14/16 may be left unconnected if VIH is met.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address InputsSynchronous 18-bit address bus; A0–A16 used for 128K×36 configuration; A17 is NC.
CLKSystem Clock InputPositive-edge-triggered master clock; all synchronous operations referenced to rising edge.
R/WRead/Write ControlSingle synchronous signal determining cycle direction; sampled at load cycle to define burst behavior.
ADV/LDBurst Counter ControlLoads new external address (LOW) or increments internal burst counter (HIGH); defines burst sequence start and progression.
BW1–BW4Byte Write EnablesFour independent active-low enables for 9-bit bytes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); supports partial writes without masking logic.
CE1, CE2, CE2Chip Enable InputsThree synchronous enables (CE1/CE2 active-low, CE2 active-high); enable depth expansion and two-cycle deselect for clean bus release.
I/O0–I/O31, I/OP1–I/OP4Data I/O Bus36-bit bidirectional synchronous data path; registered inputs/outputs eliminate external latch requirements.
ZZSleep Mode InputActive-high synchronous sleep control; gates internal clock and reduces power while retaining data (pin 64 in TQFP).
TMS, TDI, TCK, TDO, TRSTJTAG Test InterfaceIEEE 1149.1 boundary-scan signals; TRST is optional asynchronous reset (internal pullup).

Key Features

FeatureDesign Value
ZBTTM Zero Bus TurnaroundEliminates dead cycles between read/write transitions, enabling continuous 100 MHz bus utilization in pipelined systems.
Internally synchronized OEOutput enable is the only asynchronous signal; outputs tri-state immediately on OE high, simplifying timing-critical bus arbitration.
4-word burst counterReduces address bus activity by 75% during sequential accesses; LBO pin selects linear vs. interleaved order for cache-line alignment.
Individual byte write controlEnables precise 9-bit granularity writes without external byte-lane gating; BW1–BW4 can be tied low for full-word writes.
Three chip enablesSupports seamless depth expansion across multiple devices; CE1/CE2/CE2 logic allows flexible bank selection and deselection sequencing.

Applications

Packet Buffering in Network ProcessorsLine Card Memory in Telecom Switches

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets with minimal latency between ingress and egress processing stages.

IC Role / Device Role / Timing Role: High-speed dual-port-like buffer using ZBT™ read-after-write capability to sustain back-to-back packet transfers without bus stalls.

Use Value: 3.5 ns tCD and zero turnaround enable sub-10 ns effective memory cycle time, matching ASIC/FPGA interface speeds in 10G+ systems.

Use Scenario: Providing shared memory for multiple DSPs or RISC cores on a multi-service provisioning platform (MSPP) line card.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as a coherency-managed scratchpad with burst reads for instruction fetch and burst writes for status logging.

Use Value: 4-word burst mode delivers 144-bit data chunks per cycle, reducing bus occupancy and improving effective bandwidth over discrete DRAM solutions.

Industrial PLC Data LoggingMedical Imaging Frame Buffer

Use Scenario: Capturing real-time sensor data streams (e.g., vibration, temperature) at 10 kHz sampling rate with deterministic write latency.

IC Role / Device Role / Timing Role: Deterministic write buffer with individual byte write (BW1–BW4) supporting mixed-precision data storage without overwriting adjacent fields.

Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in uncontrolled cabinet environments with power cycling.

Use Scenario: Holding uncompressed 12-bit grayscale image frames (e.g., 1024×1024) during real-time contrast enhancement and noise reduction.

IC Role / Device Role / Timing Role: Low-latency frame buffer interfacing to FPGA-based image pipeline; uses pipelined outputs to decouple memory access from pixel clock domain.

Use Value: 100 MHz clock and registered I/O eliminate setup/hold violations at pixel rates up to 100 MPix/s, avoiding external FIFOs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1356KV18-100BZI256K × 18-bit (4.5 Mbit), same 100 MHz speed, but different burst addressing and no JTAG.Optimized for x18 bus width; requires redesign for x36 data path and lacks IEEE 1149.1 test support.Select when x18 interface suffices and boundary-scan is unnecessary; not drop-in due to pinout and burst control differences.
AS7C33128PFSIG128K × 32-bit (4 Mbit), 100 MHz, no ZBT™, no burst counter, no JTAG, commercial temp only (0°C to +70°C).Lacks zero turnaround and burst capability; suitable only for non-pipelined, non-burst applications with relaxed timing.Choose only for cost-sensitive, non-industrial designs where ZBT™ and burst features are unused; incompatible for direct replacement.

Compared with CY7C1356KV18-100BZI and AS7C33128PFSIG, the 71V3556SA100BQG8 uniquely combines x36 width, ZBT™ timing, 4-word burst, JTAG, and industrial temperature in a single 100-pin TQFP - making it irreplaceable in high-reliability, high-bandwidth synchronous memory subsystems.

Availability

71V3556SA100BQG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, industrial PLC data logging, and medical imaging frame buffering requiring stable component supply across extended product lifecycles.

Supply support for 71V3556SA100BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3556SA100BQG8 belongs to Renesas' ZBT SRAM product line, engineered specifically for high-speed, low-latency, pipelined memory interfaces in networking, telecommunications, and real-time embedded systems.

FAQ

What is the memory organization and total capacity of the 71V3556SA100BQG8?

The 71V3556SA100BQG8 is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports 18 address lines (A0–A17), with A17 designated as No Connect (NC) in the 128K×36 mode. The device is optimized for x36 data bus implementations in high-performance systems.

Does the 71V3556SA100BQG8 support JTAG boundary-scan, and which pins are used?

Yes, the 71V3556SA100BQG8 supports IEEE 1149.1-compliant JTAG boundary-scan. Pins TMS, TDI, TCK, TDO, and optional TRST are assigned to JTAG functions. In the 100-pin TQFP package (PKG100), these signals are mapped to pins R1, P1, R2, P2, and N7 respectively, as confirmed in the SA-series pin configuration diagrams and functional block diagram.

How does the ZBTTM feature improve system performance in the 71V3556SA100BQG8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V3556SA100BQG8 eliminates idle cycles between consecutive read and write operations. By allowing immediate transition from write to read (or vice versa) without bus contention or turnaround overhead, it sustains continuous 100 MHz throughput - critical for packet processors and real-time DSP buffers where latency directly impacts system-level determinism.

What is the function of the ADV/LD and LBO pins on the 71V3556SA100BQG8?

The ADV/LD pin controls the burst counter: LOW loads a new external address, HIGH advances the internal counter. The LBO pin selects burst order - LOW enables linear sequence (0,1,2,3), HIGH enables interleaved (0,2,3,1). Both are static inputs; LBO must remain stable during burst operation, and ADV/LD timing determines whether the current cycle initiates a load or burst increment.

Can the 71V3556SA100BQG8 operate in low-power mode, and how is it enabled?

Yes, the 71V3556SA100BQG8 supports low-power sleep mode via the ZZ pin (pin 64 in TQFP). When ZZ is driven HIGH synchronously, the internal clock is gated, reducing dynamic power while guaranteeing data retention. This mode is fully compatible with industrial temperature operation (–40°C to +85°C) and requires no external circuitry beyond proper voltage-level control.

71V3556SA100BQG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
165-TBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-CABGA (13x15)

71V3556SA100BQG8 FAQ

1.How can I place an order for 71V3556SA100BQG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3556SA100BQG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3556SA100BQG8 reliable?

The price and inventory of 71V3556SA100BQG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA100BQG8 is usually 5 days.

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71V3556SA100BQG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3556SA100BQG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3556SA100BQG8?

For technical support, including 71V3556SA100BQG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA100BQG8 requirements.

6.How does Aetrix verify that 71V3556SA100BQG8 is sourced from the original manufacturer or authorized distributors?

All 71V3556SA100BQG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA100BQG8 meets industry standards.

7.What is the process for return or replacement of 71V3556SA100BQG8?

All 71V3556SA100BQG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA100BQG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3556SA100BQG8 part is unused and in its original packaging.

Return procedure for 71V3556SA100BQG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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