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Renesas 71V3556SA100BQI
- Part No.:
- 71V3556SA100BQI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3556SA100BQI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V3556SA100BQI from Renesas is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with zero bus turnaround, pipelined outputs, and 4-word burst capability. It operates at 166 MHz with 3.5 ns clock-to-data access, supports linear/interleaved burst ordering via LBO pin, and features three chip enables for depth expansion in high-speed networking and packet buffering applications.
For engineers reviewing the 71V3556SA100BQI datasheet, 71V3556SA100BQI pinout, 71V3556SA100BQI application, or 71V3556SA100BQI equivalent, key selection criteria include ZBT™ bus efficiency, 100-pin TQFP industrial-grade packaging (–40°C to +85°C), JTAG IEEE 1149.1 compliance, individual byte write control (BW1–BW4), and synchronous OE elimination via internal output buffer enable.
Technical Context
The 71V3556SA100BQI implements a fully pipelined architecture with positive-edge-triggered address, data, and control registers synchronized to CLK. Its ZBT™ feature eliminates dead cycles between read/write transitions by overlapping bus turnaround with valid data transfer, enabling continuous burst streaming without inter-cycle gaps.
It integrates an on-chip 4-word burst counter controlled by ADV/LD and LBO, supporting both linear and interleaved addressing sequences. The device includes optional IEEE 1149.1 JTAG boundary scan (TMS/TDI/TCK/TDO/TRST) and a synchronous sleep mode (ZZ pin) for power reduction while maintaining data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports high-bandwidth data paths in telecom line cards and switch fabric buffers. |
| Max Clock Frequency | 166 MHz; enables 166 MT/s throughput with deterministic 2-cycle latency (address load → data valid). |
| Clock-to-Data Access | 3.5 ns; guarantees sub-4 ns timing margin for tight PCB routing in backplane interfaces. |
| Supply Voltage | 3.3 V ±5% (VDD core and VDDQ I/O); compatible with standard 3.3V logic families and mixed-voltage system designs. |
| Operating Temperature | –40°C to +85°C; qualified for industrial embedded systems including base station equipment and industrial controllers. |
| Burst Capability | 4-word linear or interleaved burst; reduces address bus overhead and improves sustained bandwidth in sequential access patterns. |
| JTAG Support | IEEE 1149.1 compliant (TMS/TDI/TCK/TDO/TRST); enables in-system testability and boundary scan verification on dense PCBs. |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Industrial temperature grade, green (RoHS-compliant) construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge; A0–A16 used for 128K×36 configuration (17-bit address space). |
| CLK | System Clock Input | Primary timing reference; all synchronous operations (address, control, data) are edge-aligned to rising CLK. |
| R/W | Read/Write Control | Synchronous signal defining cycle type; sampled with ADV/LD low to initiate load operation two cycles later. |
| ADV/LD | Burst Address Advance / Load | Controls burst counter increment (HIGH) or external address load (LOW); determines burst vs. random access behavior. |
| LBO | Linear/Interleaved Burst Order | Static input selecting burst sequence: LOW = linear, HIGH = interleaved; must remain stable during burst execution. |
| BW1–BW4 | Individual Byte Write Enables | Active-low synchronous controls for 9-bit bytes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); enables partial writes without masking logic. |
| CE1, CE2, CE2 | Chip Enable Inputs | Three independent enables (CE1/CE2 active-low, CE2 active-high); allow flexible depth expansion and hierarchical memory decoding. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous bus; registered input/output paths eliminate external latch requirements. |
| OE | Output Enable | Asynchronous control; ties low for full-time read enable-no timing-critical OE strobing required due to internal pipelined buffer. |
| CEN | Clock Enable | Suspends all synchronous activity when HIGH; preserves register state and output values without clock gating side effects. |
| ZZ | Sleep Mode Input | Active-high synchronous entry into low-power retention mode; reduces dynamic power while preserving memory contents. |
| TMS/TDI/TCK/TDO/TRST | JTAG Test Interface | IEEE 1149.1 boundary scan signals; TRST is optional asynchronous reset; all pins support internal pull-ups except ZZ (pull-down). |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates idle cycles between consecutive reads/writes-enables 100% bus utilization in burst-intensive packet processing. |
| Pipelined Output Buffer Enable | Removes need for external OE timing control; output drivers auto-enable based on internal pipeline state-simplifies timing closure. |
| 4-Word Burst Counter with LBO Select | Reduces address bus traffic by 75% per burst; linear/interleaved modes match processor cache line or DRAM page access patterns. |
| Individual Byte Write (BW1–BW4) | Enables granular 9-bit writes without external byte-lane gating; critical for protocol header updates and metadata manipulation. |
| Three Chip Enables (CE1/CE2/CE2) | Supports seamless memory depth expansion up to 8 devices without additional decode logic-reduces BOM count and board area. |
| Industrial Temperature Range (–40°C to +85°C) | Validated for deployment in uncontrolled environments such as outdoor wireless infrastructure and factory automation controllers. |
Applications
| High-Speed Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with minimal latency jitter. IC Role / Device Role / Timing Role: Primary data buffer providing deterministic 3.5 ns read access and zero-turnaround write-read transitions for back-to-back packet handling. Use Value: Sustains 166 MT/s throughput under mixed read/write loads-eliminates packet drop during traffic bursts. |
Use Scenario: Serving as frame buffer in OC-192/STM-64 SONET/SDH line interface cards requiring reliable burst-mode access. IC Role / Device Role / Timing Role: High-reliability synchronous SRAM interfacing directly to SerDes PHYs and framer ASICs via 36-bit parallel bus. Use Value: JTAG boundary scan enables in-system validation of high-speed memory interconnects-reducing field failure root-cause time. |
| Network Processor Co-Processor Memory | Industrial PLC Data Table Storage |
Use Scenario: Offloading packet classification and lookup table storage from main NPU core to dedicated memory subsystem. IC Role / Device Role / Timing Role: Configurable burst-access memory mapped to NPU's internal address space using ADV/LD and LBO for cache-line-aligned fetches. Use Value: Linear burst mode matches 64-byte cache line size-reducing average access latency by 3× versus random addressing. |
Use Scenario: Holding real-time I/O mapping tables and motion control trajectory buffers in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM retaining data integrity across thermal cycling and EMI exposure with built-in sleep mode (ZZ pin). Use Value: –40°C to +85°C qualification ensures uninterrupted operation during ambient temperature swings-no derating required. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-166AXC | 128K × 32-bit organization; no JTAG; 165-ball fBGA only; 3.3V core/I/O but lacks ZZ sleep mode. | Targeted at cost-sensitive consumer networking; unsuitable where industrial temp range or boundary scan is mandatory. | Select if footprint flexibility (fBGA) and lower pin count (32-bit) suffice-and JTAG/testability is not required. |
| AS7C33128PFSI-166BIN | 128K × 36-bit, same speed; no burst counter or LBO; no JTAG; TQFP-100 package; commercial temp only (0°C to +70°C). | Designed for non-industrial embedded systems; lacks ZBT™ bus efficiency and industrial reliability validation. | Choose only for prototyping or commercial-grade applications where burst control, sleep mode, and extended temperature are unnecessary. |
Compared with CY7C1371DV33-166AXC and AS7C33128PFSI-166BIN, the 71V3556SA100BQI uniquely delivers ZBT™ zero-turnaround operation, IEEE 1149.1 JTAG, industrial temperature rating, and synchronous sleep mode-all in the same 100-pin TQFP footprint-making it the sole option for high-assurance telecom and industrial control designs.
Availability
71V3556SA100BQI is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, network processor co-processor memory, and industrial PLC data table storage requiring stable component supply across extended lifecycle programs.
Supply support for 71V3556SA100BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted microcontrollers, analog power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3556SA100BQI belongs to Renesas' ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-throughput packet-switching and real-time control systems demanding deterministic timing and industrial reliability.
FAQ
What is the memory organization and total capacity of the 71V3556SA100BQI?
The 71V3556SA100BQI is configured as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This organization supports 36-bit parallel data paths ideal for high-bandwidth applications such as network packet buffering and telecom framer interfaces. The device does not support 256K × 18 configuration-only the 128K × 36 variant is implemented in the 71V3556SA100BQI part number.
Does the 71V3556SA100BQI support JTAG boundary scan, and which pins are used?
Yes, the 71V3556SA100BQI supports IEEE 1149.1-compliant JTAG boundary scan. The required pins are TMS (Test Mode Select), TDI (Test Data Input), TCK (Test Clock), TDO (Test Data Output), and optional TRST (JTAG Reset). These signals are assigned to dedicated pins in the 100-pin TQFP package and are functional only in the "SA" version-as confirmed in the pin definition tables and functional block diagram.
How does the ZBT™ feature eliminate dead cycles in the 71V3556SA100BQI?
The ZBT™ (Zero Bus Turnaround) feature in the 71V3556SA100BQI removes idle cycles between consecutive read and write operations by overlapping bus direction changes with valid data transfers. Unlike conventional SRAMs that require explicit turnaround time, the 71V3556SA100BQI pipelines control signals so that the next access begins immediately after the previous one completes-achieving 100% bus utilization in burst sequences.
What is the function of the ADV/LD and LBO pins in burst operation of the 71V3556SA100BQI?
In the 71V3556SA100BQI, ADV/LD controls burst counter behavior: sampled LOW at CLK rise, it loads a new external address; sampled HIGH, it advances the internal 4-word burst counter. LBO selects burst order-LOW enables linear addressing (0,1,2,3), HIGH enables interleaved (0,2,3,1)-and must remain static during burst execution to prevent address misalignment.
Is the 71V3556SA100BQI compatible with industrial temperature requirements?
Yes, the 71V3556SA100BQI is rated for industrial temperature operation from –40°C to +85°C, as specified in the Recommended Operating Conditions table. This qualification is validated across electrical parameters including setup/hold times, access time, and power consumption-ensuring reliable performance in base stations, industrial controllers, and outdoor networking equipment without derating.
71V3556SA100BQI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3556SA100BQI FAQ
1.How can I place an order for 71V3556SA100BQI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA100BQI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA100BQI reliable?
The price and inventory of 71V3556SA100BQI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA100BQI is usually 5 days.
3.What payment methods are accepted for 71V3556SA100BQI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA100BQI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3556SA100BQI?
71V3556SA100BQI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA100BQI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA100BQI?
For technical support, including 71V3556SA100BQI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA100BQI requirements.
6.How does Aetrix verify that 71V3556SA100BQI is sourced from the original manufacturer or authorized distributors?
All 71V3556SA100BQI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA100BQI meets industry standards.
7.What is the process for return or replacement of 71V3556SA100BQI?
All 71V3556SA100BQI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA100BQI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA100BQI part is unused and in its original packaging.
Return procedure for 71V3556SA100BQI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA100BQI Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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