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Renesas 71V3556SA100BQI8
- Part No.:
- 71V3556SA100BQI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3556SA100BQI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,239
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Product details
Overview
71V3556SA100BQI8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 100 MHz clock speed, 3.5 ns clock-to-data access time, zero bus turnaround architecture, and pipelined outputs in a 100-pin TQFP package. It enables high-throughput memory interfacing in network packet buffers and telecom line cards.
For engineers reviewing the 71V3556SA100BQI8 datasheet, 71V3556SA100BQI8 pinout, 71V3556SA100BQI8 application, or 71V3556SA100BQI8 equivalent, key selection criteria include ZBT™ burst timing compliance, industrial temperature support (–40°C to +85°C), JTAG boundary scan capability, and 3.3V I/O compatibility with high-speed bus interfaces.
Technical Context
The 71V3556SA100BQI8 implements a fully synchronous, positive-edge-triggered architecture with registered address, control, and data paths. Its internal burst counter supports 4-word linear or interleaved sequences controlled by the LBO pin, and its ZBT™ feature eliminates dead cycles between read/write transitions via synchronized output buffer enable.
It integrates three chip enables (CE1, CE2, CE2) for depth expansion, individual byte write controls (BW1–BW4), and optional IEEE 1149.1 JTAG test interface. The device uses dual power domains: 3.3V ±5% core supply (VDD) and 3.3V ±5% I/O supply (VDDQ), with sleep mode (ZZ) for low-power retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports high-bandwidth data path in 36-bit bus systems. |
| Clock Frequency | 100 MHz; enables 10 ns cycle time for sustained burst transfers in real-time packet processing. |
| Access Time | 3.5 ns clock-to-data; ensures deterministic latency for pipelined read operations two cycles after address load. |
| ZBT™ Feature | Zero bus turnaround; allows immediate read-after-write or write-after-read without bus idle cycles, critical for back-to-back memory transactions. |
| Operating Temperature | –40°C to +85°C industrial grade; qualified for deployment in uncontrolled ambient environments like base station enclosures. |
| Supply Voltages | VDD = 3.3V ±5%, VDDQ = 3.3V ±5%; decoupled core/I/O rails reduce noise coupling and support mixed-signal SoC integration. |
| JTAG Support | IEEE 1149.1 compliant boundary scan; enables in-system testability and debug of memory subsystem interconnects. |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit synchronous address bus; latched on rising CLK edge with ADV/LD low and valid chip enables. |
| CLK | Clock Input | Primary timing reference; all synchronous inputs and outputs referenced to rising edge; OE is asynchronous. |
| R/W | Read/Write Control | Synchronous signal defining transaction type; determines whether loaded address initiates read or write two cycles later. |
| ADV/LD | Burst Address Advance / Load | Controls burst counter: low loads new external address; high increments internal counter for sequential access. |
| LBO | Linear/Interleaved Burst Order | Static input selecting burst sequence; low = linear (0,1,2,3), high = interleaved (0,2,1,3) per IEEE Std 1541. |
| BW1–BW4 | Byte Write Enables | Four active-low signals enabling independent 9-bit byte writes; supports partial-word updates without read-modify-write overhead. |
| CE1, CE2, CE2 | Chip Enables | Three synchronous enables (CE1/CE2 active low, CE2 active high); any false condition initiates 2-cycle deselect with tri-state I/O. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; registered input/output with full pipelining for predictable timing closure. |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | IEEE 1149.1 boundary scan pins; TRST is optional asynchronous reset; all except TDO are inputs with internal pull-ups. |
| ZZ | Sleep Mode | Active-high synchronous input gating internal clock; reduces power while retaining data; pin 64 in TQFP (VSS/ZZ function). |
Key Features
| Feature | Design Value |
|---|---|
| Zero Bus Turnaround (ZBT™) | Eliminates bus idle cycles between consecutive reads and writes, increasing effective bandwidth in burst-intensive applications like packet buffering. |
| 4-Word Burst Counter | Generates sequential addresses internally-linear or interleaved-reducing address bus traffic and controller overhead for streaming data access. |
| Individual Byte Write Control | Enables precise 9-bit sub-word writes via BW1–BW4, avoiding full-word overwrites and reducing bus contention in multi-master systems. |
| Internally Synchronized Output Enable | Removes need for external OE timing control; output buffer enable is clock-synchronized, simplifying system-level timing design. |
| Three Chip Enables | Supports seamless depth expansion across multiple devices without external logic, enabling scalable memory subsystems up to 1M × 36 or larger. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in switching ASICs with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with ZBT™ enabling back-to-back read/write for header parsing and payload reassembly. Use Value: 3.5 ns clock-to-data and zero bus turnaround reduce packet processing latency by up to 40% versus conventional SRAMs in burst-heavy traffic patterns. | Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line cards requiring deterministic access to 36-bit parallel data paths. IC Role / Device Role / Timing Role: Synchronous SRAM providing pipelined, burst-capable storage for ATM cell or GFP frame assembly/disassembly engines. Use Value: 100 MHz operation and 4-word burst mode sustain 1.44 Gbps throughput per device, matching OC-192 line rates without external glue logic. |
| Industrial PLC Data Logging | High-Performance Test Equipment Memory |
Use Scenario: Real-time acquisition and timestamped storage of sensor data streams in programmable logic controllers operating in harsh environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM serving as cyclic buffer for analog/digital I/O modules, leveraging ZZ sleep mode during idle intervals. Use Value: –40°C to +85°C rating and guaranteed data retention in sleep mode ensure reliable logging under thermal stress and power cycling. | Use Scenario: Deep pattern memory in automated test equipment (ATE) for high-speed digital IC validation requiring fast vector loading and capture. IC Role / Device Role / Timing Role: Burst-access SRAM storing stimulus/response vectors with JTAG boundary scan enabling in-system verification of memory interconnect integrity. Use Value: IEEE 1149.1 JTAG support allows structural testing of PCB traces and solder joints without physical probe access, reducing test development time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-100BZXI | 256K × 18-bit organization, same 100 MHz speed, but narrower 18-bit bus; no ZBT™ architecture-uses standard pipelined SRAM timing. | Requires two devices for 36-bit width; lacks zero bus turnaround, introducing 1-cycle gap between read/write bursts. | Select when cost-per-bit is prioritized over burst efficiency and board space allows dual-device implementation. |
| AS7C33128PFSIG-100 | 128K × 32-bit organization, 100 MHz, no JTAG, no ZZ sleep, commercial temp only (0°C to +70°C), no burst counter or LBO. | Not suitable for industrial environments or systems requiring boundary scan testability or low-power sleep states. | Choose only for cost-sensitive, non-critical commercial applications where JTAG, sleep mode, and industrial temp are unnecessary. |
Compared with CY7C1356BV18-100BZXI and AS7C33128PFSIG-100, the 71V3556SA100BQI8 uniquely delivers ZBT™-enabled zero-gap burst sequencing, industrial temperature operation, integrated JTAG, and true 36-bit width in a single 100-pin TQFP-making it optimal for telecom infrastructure and ruggedized embedded systems demanding deterministic timing and testability.
Availability
71V3556SA100BQI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, industrial PLC data logging, and high-performance test equipment requiring stable component supply across extended product lifecycles.
Supply support for 71V3556SA100BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V3556SA100BQI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in high-speed networking and telecom infrastructure where deterministic burst access and bus efficiency are critical.
FAQ
What is the memory organization and total capacity of the 71V3556SA100BQI8?
The 71V3556SA100BQI8 is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports 36-bit parallel data paths common in high-end networking ASICs and telecom processors, eliminating the need for width expansion in many designs.
Does the 71V3556SA100BQI8 support JTAG boundary scan, and which pins are used?
Yes, the 71V3556SA100BQI8 supports IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are dedicated to this function and appear on the 100-pin TQFP package (pins R5, P5, R4, P4, and N7 respectively per BG119 pinout mapping confirmed for SA version).
How does the ZBT™ feature of the 71V3556SA100BQI8 improve system performance?
The ZBT™ feature in the 71V3556SA100BQI8 eliminates dead cycles between consecutive read and write operations, allowing immediate bus turnaround. This increases effective memory bandwidth by up to 25% in burst-intensive applications such as packet buffering, where back-to-back transactions are common.
What is the role of the ADV/LD and LBO pins in burst operation of the 71V3556SA100BQI8?
ADV/LD controls burst initiation: low loads a new external address; high advances the internal burst counter. LBO selects burst order-low enables linear (0,1,2,3), high enables interleaved (0,2,1,3). Both are synchronous inputs critical for deterministic 4-word burst sequencing in the 71V3556SA100BQI8.
Is the 71V3556SA100BQI8 rated for industrial temperature operation, and what are the voltage tolerances?
Yes, the 71V3556SA100BQI8 is qualified for industrial temperature range (–40°C to +85°C). It operates with VDD = 3.3V ±5% (3.135 V to 3.465 V) and VDDQ = 3.3V ±5%, supporting robust operation in thermally demanding environments without derating.
71V3556SA100BQI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3556SA100BQI8 FAQ
1.How can I place an order for 71V3556SA100BQI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA100BQI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA100BQI8 reliable?
The price and inventory of 71V3556SA100BQI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA100BQI8 is usually 5 days.
3.What payment methods are accepted for 71V3556SA100BQI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA100BQI8 transactions.
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4.How is shipping managed for 71V3556SA100BQI8?
71V3556SA100BQI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA100BQI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA100BQI8?
For technical support, including 71V3556SA100BQI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA100BQI8 requirements.
6.How does Aetrix verify that 71V3556SA100BQI8 is sourced from the original manufacturer or authorized distributors?
All 71V3556SA100BQI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA100BQI8 meets industry standards.
7.What is the process for return or replacement of 71V3556SA100BQI8?
All 71V3556SA100BQI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA100BQI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA100BQI8 part is unused and in its original packaging.
Return procedure for 71V3556SA100BQI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA100BQI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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