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Renesas 71V3556SA133BG

Part No.:
71V3556SA133BG
Manufacturer:
Renesas
Category:
Memory
Package:
119-BGA
Datasheet:
Aetrix71V3556SA133BG.pdf
Description:
IC SRAM 4.5MBIT PAR 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,294

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Product details

Overview

71V3556SA133BG from IDT (now Renesas) is a 128K × 36-bit, 4.5 Mbit, 3.3V synchronous ZBT™ SRAM with zero bus turnaround, pipelined outputs, and 4-word burst capability. It operates at 133 MHz (7.5 ns clock period), delivers 3.5 ns clock-to-data access, supports linear/interleaved burst order via LBO pin, and features JTAG boundary scan (IEEE 1149.1). It is used in high-speed networking line cards and packet buffering systems requiring deterministic latency and no dead cycles between read/write transitions.

For engineers reviewing the 71V3556SA133BG datasheet, 71V3556SA133BG pinout, 71V3556SA133BG application, or 71V3556SA133BG equivalent, key selection criteria include ZBT™ bus turnaround elimination, 100-pin TQFP package compatibility, industrial temperature support (–40°C to +85°C), 3.3V core/I/O supply, and JTAG-enabled testability for production validation.

Technical Context

The 71V3556SA133BG implements a fully synchronous, positive-edge-triggered architecture with registered address, control, and data paths. Its internal burst counter advances on ADV/LD = HIGH, enabling four-cycle interleaved or linear bursts from a single address load - eliminating external address generation logic.

ZBT™ operation is enforced by dual-phase pipelining: address/control registration occurs on cycle N, and data transfer completes on cycle N+2. The internally synchronized output buffer enable (OE) removes timing-critical OE control, while three chip enables (CE1, CE2, CE2) support depth expansion without external logic.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via pin-compatible variant
Max Clock Frequency133 MHz; enables 7.5 ns clock period for tightly timed system buses
Access Time3.5 ns clock-to-data; guarantees deterministic read latency for real-time packet processing
Burst Capability4-word burst (linear or interleaved); reduces address bus traffic by 75% per burst sequence
Supply Voltage3.3 V ±5% (VDD/VDDQ); compatible with standard 3.3V logic families and mixed-voltage PCBs
Operating Temperature–40°C to +85°C; qualified for industrial-grade embedded and telecom infrastructure
JTAG SupportIEEE 1149.1 compliant; enables boundary scan testing without additional test fixtures

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14, 16, and 66 tolerate VIH-level inputs without direct VDD connection.

Pin/TerminalCircuit RoleDesign Meaning
A0–A16Address InputsSynchronous 17-bit address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled
CLKSystem Clock InputPrimary timing reference; all synchronous operations triggered on rising edge
R/WRead/Write ControlSynchronous signal defining cycle type; determines data direction two cycles later
ADV/LDBurst Counter ControlLOW loads new address; HIGH increments internal burst counter for sequential access
LBOBurst Order SelectStatic input: LOW = linear burst, HIGH = interleaved burst (critical for cache-line alignment)
CE1, CE2, CE2Chip EnablesThree independent enables (CE1/CE2 active-low, CE2 active-high); allow depth expansion with no glue logic
BW1–BW4Byte Write EnablesFour active-low signals controlling 9-bit byte writes; support partial-word updates without read-modify-write
I/O0–I/O31, I/OP1–I/OP4Data I/O Bus36-bit bidirectional synchronous data path; registered input/output for clean setup/hold margins
OEOutput EnableAsynchronous; tri-states outputs immediately when HIGH - simplifies bus arbitration
ZZSleep Mode InputActive-HIGH synchronous sleep; gates internal clock and reduces power while retaining data
TMS, TDI, TCK, TDO, TRSTJTAG Test InterfaceIEEE 1149.1-compliant boundary scan; TRST optional and internally pulled up

Key Features

FeatureDesign Value
ZBTTM Zero Bus TurnaroundEliminates dead cycles between consecutive reads/writes - enables 100% bus utilization in burst-intensive applications
Internally Synchronized OERemoves critical timing dependency on OE assertion; outputs remain stable across clock edges without external control logic
4-Word Burst with LBO SelectionReduces address bus toggling and controller overhead; linear mode matches sequential memory access patterns, interleaved suits cache-line fetches
Individual Byte Write (BW1–BW4)Enables precise 9-bit sub-word writes without full-word read-modify-write - essential for protocol header updates and descriptor management
Three Chip Enables (CE1/CE2/CE2)Supports seamless depth expansion across multiple devices using only one set of address/control lines - no address decoder required
JTAG Boundary Scan (IEEE 1149.1)Provides production-test visibility into interconnect integrity and pin-level functionality without physical probe access

Applications

Packet Buffering in Switch ASICsHigh-Speed Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: Primary burst-access SRAM providing low-latency, deterministic read/write turnaround for cut-through forwarding engines.

Use Value: ZBTTM eliminates bus idle time between header read and payload write, increasing effective throughput by ≥15% versus conventional SRAMs.

Use Scenario: Serving as frame buffer and descriptor memory in telecom line cards handling OC-48/STM-16 traffic.

IC Role / Device Role / Timing Role: Synchronous pipelined SRAM interfacing directly to FPGA-based traffic managers with 133 MHz bus clocks.

Use Value: 3.5 ns clock-to-data access and 4-word burst reduce FPGA logic burden for address sequencing and improve worst-case jitter margin.

Network Processor Data CacheIndustrial Real-Time Controller Buffer

Use Scenario: Acting as L2 data cache for multi-core network processors executing deep packet inspection algorithms.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM supporting concurrent read/write operations with zero turnaround penalty.

Use Value: Dual-phase pipelining and burst capability sustain >95% bus efficiency during sustained 133 MHz operation under mixed workloads.

Use Scenario: Buffering sensor fusion data streams in ruggedized industrial controllers deployed in factory automation.

IC Role / Device Role / Timing Role: Industrial-temperature-rated SRAM with JTAG testability and sleep mode for energy-constrained edge nodes.

Use Value: –40°C to +85°C rating and ZZ sleep mode ensure reliable operation in uncontrolled environments while reducing standby power by >80%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1356BV18-133BZI128K × 18-bit organization; no ZBTTM; 165-ball fBGA only; no JTAGRequires two devices for 36-bit width; lacks zero-turnaround and boundary scanSelect only if 18-bit interface suffices and JTAG/testability is not required
AS7C33128PFSI-133BIN128K × 36-bit; no ZBTTM; 100-pin TQFP; no burst counter or ADV/LD logicNeeds external burst address generation; higher latency due to non-pipelined output enableChoose when ZBT™ and burst features are unnecessary and cost is primary driver

Compared with CY7C1356BV18-133BZI and AS7C33128PFSI-133BIN, the 71V3556SA133BG uniquely delivers zero bus turnaround, integrated burst addressing, and IEEE 1149.1 testability - making it irreplaceable in latency-sensitive, high-reliability telecom and industrial designs where deterministic timing and production test coverage are mandatory.

Availability

71V3556SA133BG is available at Aetrix Electronics and suitable for packet buffering, line card memory, and industrial controller applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for 71V3556SA133BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V3556SA133BG belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-speed networking and real-time embedded systems demanding zero bus turnaround, deterministic latency, and robust testability.

FAQ

What does the "SA" suffix in 71V3556SA133BG indicate?

The "SA" suffix denotes the version with optional IEEE 1149.1 JTAG boundary scan capability. Unlike the base "S" variant, the 71V3556SA133BG integrates TMS, TDI, TCK, TDO, and optional TRST pins - enabling production-level interconnect testing and debug without modifying board layout or adding test points.

Does 71V3556SA133BG support both 128K×36 and 256K×18 configurations?

No - the 71V3556SA133BG is specifically configured as 128K × 36-bit. The 256K × 18-bit variant is the functionally similar but pin-different 71V3558SA133BG. Both share identical timing, voltage, and feature sets, but their address/data pin mappings differ to accommodate distinct memory widths.

How does the ZZ (Sleep Mode) pin function in 71V3556SA133BG?

The ZZ pin is a synchronous active-HIGH input that gates the internal clock and places the 71V3556SA133BG into its lowest-power state while maintaining full data retention. When asserted, core logic is disabled, dynamic power drops significantly, and I/Os enter high-impedance - all without requiring external reset or reinitialization upon wake-up.

Can the 71V3556SA133BG operate without actively controlling OE?

Yes - OE is asynchronous but can be tied LOW permanently in most designs. Because the 71V3556SA133BG uses internally synchronized output buffers, OE is not needed to meet timing during normal read/write cycles. It is only required when precise, cycle-accurate output tri-state control is necessary - such as during bus sharing or hot-swap scenarios.

What is the role of ADV/LD and LBO pins in burst operation?

ADV/LD controls burst initiation: LOW loads a new external address; HIGH advances the internal burst counter. LBO selects burst order - LOW enables linear (0,1,2,3), HIGH enables interleaved (0,2,1,3) - directly impacting cache-line alignment and memory controller address generation logic.

71V3556SA133BG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
119-BGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4.2 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

71V3556SA133BG FAQ

1.How can I place an order for 71V3556SA133BG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3556SA133BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3556SA133BG reliable?

The price and inventory of 71V3556SA133BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA133BG is usually 5 days.

3.What payment methods are accepted for 71V3556SA133BG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA133BG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3556SA133BG?

71V3556SA133BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3556SA133BG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3556SA133BG?

For technical support, including 71V3556SA133BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA133BG requirements.

6.How does Aetrix verify that 71V3556SA133BG is sourced from the original manufacturer or authorized distributors?

All 71V3556SA133BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA133BG meets industry standards.

7.What is the process for return or replacement of 71V3556SA133BG?

All 71V3556SA133BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA133BG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3556SA133BG part is unused and in its original packaging.

Return procedure for 71V3556SA133BG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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