My Inquiry
My Account
Renesas 71V3556SA133BG8
- Part No.:
- 71V3556SA133BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3556SA133BG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,700
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3556SA133BG8 from IDT (now Renesas) is a 3.3V synchronous ZBT SRAM with 128K × 36-bit organization, 133 MHz clock speed, 3.5 ns clock-to-data access time, zero bus turnaround architecture, and pipelined outputs. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic read/write interleaving without dead cycles.
For engineers reviewing the 71V3556SA133BG8 datasheet, 71V3556SA133BG8 pinout, 71V3556SA133BG8 application, or 71V3556SA133BG8 equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), JTAG IEEE 1149.1 compliance, and industrial temperature operation (–40°C to +85°C).
Technical Context
The 71V3556SA133BG8 implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates bus turnaround latency by enabling immediate read-after-write transitions via internal burst counter and ADV/LD-controlled address sequencing.
It integrates pipelined input/output registers, asynchronous OE for output tri-state control, and optional boundary-scan JTAG (TMS/TDI/TCK/TDO/TRST) compliant with IEEE 1149.1. The device supports 4-word burst (linear or interleaved), individual byte write enables, and three chip enables (CE1, CE2, CE2) for depth expansion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); fixed configuration for this part number |
| Clock Frequency | 133 MHz - defines maximum sustained throughput in pipelined systems |
| Clock-to-Data Access | 3.5 ns - guaranteed timing from CLK rise to valid Q output under specified VDD/VDDQ and load |
| Supply Voltage | 3.3 V ±5% (VDD core and VDDQ I/O) - requires separate low-noise 3.3V rails |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded systems |
| Burst Capability | 4-word linear or interleaved - reduces address bus traffic during sequential accesses |
| JTAG Support | IEEE 1149.1 compliant (TMS/TDI/TCK/TDO/TRST) - enables boundary-scan test and debug |
Pinout & Package
Packaged in a 119-ball BGA (BG119, ball grid array) per JEDEC standard, with 1.0 mm pitch and 12 mm × 12 mm body size. Pinout validated for 128K × 36 configuration per IDT document 5281 drw 13A.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock Input | Positive-edge-triggered master timing reference for all synchronous registers |
| A0–A16 | Address Inputs | 17-bit address bus for 128K-depth addressing; latched on rising CLK with ADV/LD low |
| R/W | Read/Write Control | Synchronous signal defining cycle type; sampled at rising CLK edge to determine data direction |
| ADV/LD | Advance Burst / Load Address | Controls burst counter increment (HIGH) or external address load (LOW); critical for burst sequencing |
| BW1–BW4 | Byte Write Enables | Four independent active-low signals enabling 9-bit byte writes; allows partial-word updates without read-modify-write |
| CE1, CE2, CE2 | Chip Enables | Three synchronous enables (CE1/CE2 active-low, CE2 active-high) for multi-chip depth expansion |
| LBO | Burst Order Select | Static input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) burst sequence per JEDEC standards |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | IEEE 1149.1 boundary-scan pins; TRST is optional asynchronous reset (internal pullup) |
| ZZ | Sleep Mode Input | Active-high synchronous entry into low-power sleep; retains data while gating internal clock |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus with registered input and output paths; synchronized to CLK |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3V core supply; VDDQ = 3.3V I/O supply; VSS = common ground; decoupling required per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Architecture | Eliminates dead bus cycles between reads and writes - enables back-to-back memory transactions with no turnaround penalty |
| Pipelined Outputs | Internally synchronized output buffer enable removes need for external OE timing control - simplifies system-level timing closure |
| 4-Word Burst Mode | Single address initiates four consecutive data transfers - reduces address bus overhead in streaming applications |
| Individual Byte Write | BW1–BW4 allow selective 9-bit byte updates - avoids full-word overwrites and preserves adjacent data integrity |
| Three Chip Enables | CE1 (active-low), CE2 (active-low), CE2 (active-high) support flexible depth expansion without external logic |
Applications
| High-Speed Network Switching | Telecom Line Card Buffering |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switching ASICs. IC Role / Device Role / Timing Role: High-bandwidth, low-latency packet buffer with zero-turnaround read/write capability for ingress/egress pipeline stages. Use Value: Enables deterministic frame buffering at 133 MHz with 3.5 ns access, supporting wire-speed 10Gbps+ switching without stall cycles. | Use Scenario: Temporary storage of voice-over-IP (VoIP) payload packets in DSP-based line cards. IC Role / Device Role / Timing Role: Synchronous SRAM acting as dual-port-accessible FIFO buffer between TDM interface and packet processor. Use Value: 4-word burst mode accelerates sequential VoIP sample transfers; industrial temp rating ensures reliability in chassis-mounted telecom equipment. |
| Baseband Processing in Wireless Infrastructure | Industrial Real-Time Control Memory |
Use Scenario: Holding intermediate FFT and channel estimation results in LTE/5G baseband processing units. IC Role / Device Role / Timing Role: Low-latency working memory for DSP co-processors requiring pipelined, burst-capable access patterns. Use Value: Clock-to-data of 3.5 ns and 133 MHz operation meet tight timing budgets for real-time signal processing loops. | Use Scenario: Storing motion control trajectory tables and sensor fusion buffers in programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory interfaced to FPGA or microcontroller with strict jitter requirements. Use Value: Industrial temperature range (–40°C to +85°C) and sleep mode (ZZ pin) support unattended operation in harsh factory environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-133BZI | 128K × 18-bit organization, 133 MHz, 3.3V, but lacks ZBT™ and JTAG | Requires external logic for burst control; not suitable for zero-turnaround systems | Select only if 18-bit bus width suffices and ZBT™ is unnecessary |
| AS7C3256A-133JCIN | 128K × 32-bit, 133 MHz, 3.3V, no burst counter or JTAG; asynchronous OE only | Higher latency due to non-pipelined outputs; no burst or byte-write features | Consider only for cost-sensitive designs where ZBT™ and burst are not required |
Compared with CY7C1356BV18-133BZI and AS7C3256A-133JCIN, the 71V3556SA133BG8 uniquely delivers zero bus turnaround, 4-word burst, and IEEE 1149.1 JTAG in a 128K × 36 package - making it irreplaceable in high-throughput, testable, and deterministic-memory subsystems.
Availability
71V3556SA133BG8 is available at Aetrix Electronics and suitable for high-speed network switching, telecom line card buffering, and industrial real-time control applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for 71V3556SA133BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF solutions for communications and computing infrastructure.
The 71V3556SA133BG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for high-performance networking, telecom, and military/aerospace systems demanding zero-latency bus turnaround and deterministic burst access.
FAQ
What is the memory organization and access width of the 71V3556SA133BG8?
The 71V3556SA133BG8 is a 128K × 36-bit synchronous SRAM, providing 4.5 Mbit total capacity with a 36-bit data bus (I/O0–I/O31 plus I/OP1–I/OP4). This configuration is fixed for the "SA" variant and differs from the 256K × 18-bit 71V3558SA family members.
Does the 71V3556SA133BG8 support JTAG boundary scan, and which pins are used?
Yes, the 71V3556SA133BG8 supports IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are dedicated to this function and are assigned to specific balls in the BG119 package per IDT drawing 5281 drw 13A.
How does the ZBT™ feature eliminate bus turnaround latency in the 71V3556SA133BG8?
The ZBT™ feature in the 71V3556SA133BG8 enables immediate transition from write to read (or vice versa) without inserting idle cycles. This is achieved via internal synchronization of address/control registers and burst counter logic, allowing the next transaction to begin on the subsequent clock edge - confirmed in the functional truth table (Table 08).
What is the role of the ADV/LD and LBO pins in burst operation of the 71V3556SA133BG8?
ADV/LD controls whether the internal burst counter increments (ADV/LD = HIGH) or loads a new external address (ADV/LD = LOW). LBO selects burst order: LOW for linear, HIGH for interleaved. Both are synchronous inputs validated in the timing diagrams (Tables 10–11) and must remain static during burst sequences.
Can the 71V3556SA133BG8 operate in low-power mode, and how is it enabled?
Yes, the 71V3556SA133BG8 supports sleep mode via the ZZ pin. When ZZ is driven HIGH synchronously, the internal clock is gated and power consumption drops to minimum while data retention is guaranteed. This is documented in the pin definition table (Table 02) and supported across all package variants including BG119.
71V3556SA133BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3556SA133BG8 FAQ
1.How can I place an order for 71V3556SA133BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA133BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA133BG8 reliable?
The price and inventory of 71V3556SA133BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA133BG8 is usually 5 days.
3.What payment methods are accepted for 71V3556SA133BG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA133BG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3556SA133BG8?
71V3556SA133BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA133BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA133BG8?
For technical support, including 71V3556SA133BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA133BG8 requirements.
6.How does Aetrix verify that 71V3556SA133BG8 is sourced from the original manufacturer or authorized distributors?
All 71V3556SA133BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA133BG8 meets industry standards.
7.What is the process for return or replacement of 71V3556SA133BG8?
All 71V3556SA133BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA133BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA133BG8 part is unused and in its original packaging.
Return procedure for 71V3556SA133BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA133BG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
