Renesas 71V3556SA133BGG

Overview

71V3556SA133BGG from IDT (now Renesas) is a 128K × 36-bit, 4.5 Mbit, 3.3V synchronous ZBT™ SRAM with zero bus turnaround, pipelined outputs, and 133 MHz operation (7.5 ns clock-to-data access). It features 4-word burst capability (linear/interleaved), individual byte write control (BW1–BW4), and JTAG boundary scan (IEEE 1149.1). Used in high-speed networking line cards and packet buffer subsystems requiring deterministic latency and no dead cycles between read/write transitions.

For engineers reviewing the 71V3556SA133BGG datasheet, 71V3556SA133BGG pinout, 71V3556SA133BGG application, or 71V3556SA133BGG equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 or BGA-119 package compatibility, industrial temperature support (–40°C to +85°C), 3.3V core/I/O supply tolerance, and JTAG-enabled testability for production validation.

Technical Context

This SRAM implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates bus turnaround delay by enabling immediate read-after-write or write-after-read transitions without dead cycles, achieved via internal burst counter and ADV/LD-controlled address sequencing.

The device supports two memory configurations (128K×36 or 256K×18) via pin-strapping and includes three chip enables (CE1, CE2, CE2) for depth expansion, asynchronous OE for output control, and optional JTAG (TMS/TDI/TCK/TDO/TRST) on BGA packages only. Sleep mode (ZZ) reduces power while retaining data.

Key Specifications

Pinout & Package

71V3556SA133BGG is packaged in a 119-ball fine-pitch ball grid array (BGG119), JEDEC MO-207AC compliant, with 1.0 mm ball pitch and 12 mm × 12 mm body size. Thermal pad exposed on underside for enhanced heat dissipation in sustained burst-mode operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1356BV18-133BZI and AS7C33128PFSI-133BIN, the 71V3556SA133BGG delivers unique ZBT™ timing, JTAG testability, and 36-bit byte-write granularity-critical for telecom packet processing where deterministic latency and field-test coverage are mandatory.

Availability

71V3556SA133BGG is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom infrastructure hardware, and industrial protocol gateways requiring stable component supply across extended product lifecycles.

Supply support for 71V3556SA133BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71V3556SA133BGG belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-turnaround, burst-capable memory subsystems in telecom switching, network processors, and high-end test equipment.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V3556SA133BGG?

The 71V3556SA133BGG is rated for 133 MHz operation with a clock-to-data access time of 7.5 ns. This specification is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The timing aligns with its ZBT™ architecture, where data appears two clock cycles after address/control registration, enabling predictable pipeline behavior in synchronous systems.

Does the 71V3556SA133BGG support both 128K×36 and 256K×18 configurations?

The 71V3556SA133BGG is specifically configured as 128K × 36-bit (4.5 Mbit). While the broader 71V3556/58 family includes both 128K×36 and 256K×18 variants, the SA suffix and BGG119 package denote the 128K×36 version. Pin compatibility with 256K×18 variants is not maintained due to differing address bus width (A0–A16 vs. A0–A17) and I/O pin mapping.

Is JTAG boundary scan functionality available on the 71V3556SA133BGG?

Yes - the "SA" suffix explicitly denotes JTAG support. The 71V3556SA133BGG implements IEEE 1149.1-compliant boundary scan with dedicated TMS, TDI, TCK, TDO, and optional TRST pins. These signals are routed to specific balls on the BGG119 package (e.g., TMS on A13, TDI on P6) and are not NC on this variant, unlike the base "S" version.

How does the ZBT™ feature eliminate bus turnaround delay in the 71V3556SA133BGG?

The 71V3556SA133BGG achieves zero bus turnaround by decoupling read and write operations via its internal burst counter and ADV/LD-controlled sequencing. When transitioning from write to read (or vice versa), the device uses the same clock edge to register new control/address and initiate the next data transfer - no idle cycles are inserted. This is enforced by synchronous R/W sampling and pipelined output registers, guaranteeing continuous 133 MHz throughput.

What is the function of the ZZ (Sleep Mode) pin on the 71V3556SA133BGG?

The ZZ pin on the 71V3556SA133BGG is a synchronous high-active input that gates the internal clock and places the SRAM into ultra-low-power sleep mode. In this state, dynamic power drops >90%, yet data retention is guaranteed across the full industrial temperature range. ZZ must be asserted synchronously with CLK and remains effective even during burst or pipelined operations.