Renesas 71V3556SA133BGG8

Overview

71V3556SA133BGG8 from IDT (now Renesas) is a 128K × 36-bit, 4.5 Mbit, 3.3V synchronous ZBT™ SRAM with zero bus turnaround, pipelined outputs, and 133 MHz operation (7.5 ns clock-to-data access). It features 4-word burst (linear/interleaved), individual byte write control (BW1–BW4), and JTAG IEEE 1149.1 support. Used in high-speed networking buffers, packet switching ASIC interfaces, and FPGA co-processor memory subsystems.

For engineers reviewing the 71V3556SA133BGG8 datasheet, 71V3556SA133BGG8 pinout, 71V3556SA133BGG8 application, or 71V3556SA133BGG8 equivalent, key selection criteria include ZBT™ timing compliance, 100-pin TQFP vs. 119-ball BGA package compatibility, industrial temperature range (–40°C to +85°C), and JTAG testability for production validation.

Technical Context

The 71V3556SA133BGG8 implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates dead cycles between read/write transitions via internal burst counter coordination and ADV/LD-controlled address loading or incrementing.

It supports dual-bus operation with pipelined output registers, asynchronous OE for output tri-state control, and optional boundary-scan JTAG (TMS/TDI/TCK/TDO/TRST) compliant with IEEE 1149.1. The LBO pin selects linear or interleaved burst order, and ZZ enables low-power sleep mode with guaranteed data retention.

Key Specifications

Pinout & Package

71V3556SA133BGG8 is packaged in a JEDEC-standard 119-ball fine-pitch ball grid array (BGG119), 12 mm × 12 mm, 0.8 mm pitch, with exposed thermal pad. Pinout conforms to BG119 layout for 128K × 36 configuration, including dedicated I/O banks (I/O0–I/O31, I/OP1–I/OP4), three chip enables (CE1, CE2, CE2), and full JTAG interface (TMS, TDI, TCK, TDO, TRST).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with 71V3556SA133BGG8, CY7C1356BV18-133BZI offers higher density in 18-bit format but requires layout change and forfeits JTAG, while AS7C33128P-133JCIN sacrifices ZBT™ and burst for cost reduction-neither provides drop-in replacement capability.

Availability

71V3556SA133BGG8 is available at Aetrix Electronics and suitable for high-speed network buffers, FPGA co-processor memory, and industrial motion controllers requiring stable component supply across extended product lifecycles.

Supply support for 71V3556SA133BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V3556SA series belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in packet-switching, baseband, and real-time control systems demanding deterministic memory access.

FAQ

What is the memory organization and total capacity of the 71V3556SA133BGG8?

The 71V3556SA133BGG8 is configured as 128K × 36-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. This organization supports 36-bit parallel data paths and is pin-compatible with the 256K × 18-bit 71V3558SA variant. The device uses a high-performance CMOS process and is optimized for ZBT™ operation in high-throughput systems.

Does the 71V3556SA133BGG8 support JTAG boundary scan, and which pins are used?

Yes, the 71V3556SA133BGG8 supports IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are assigned to the JTAG interface and located on the BGG119 package per the BG119 pinout. TRST is optional and internally pulled up; if unused, it may be left floating. All JTAG pins have internal pull-ups except TRST (pull-up).

How does the ZBT™ (Zero Bus Turnaround) feature function in the 71V3556SA133BGG8?

The ZBT™ feature in the 71V3556SA133BGG8 eliminates dead cycles between consecutive read and write operations by synchronizing the burst counter and using the ADV/LD signal to manage address loading versus incrementing. When ADV/LD is high, the internal counter advances; when low, a new external address loads-enabling immediate transition between read and write bursts without bus idle time.

What is the role of the LBO pin, and how does it affect burst behavior in the 71V3556SA133BGG8?

The LBO (Linear/Interleaved Burst Order) pin selects the 4-word burst sequence: LBO = low enables linear order (0,1,2,3), while LBO = high enables interleaved order (0,2,1,3). It is a static input that must remain stable during burst operation. This selection aligns the SRAM's burst pattern with host processor cache line mapping-critical for optimizing bandwidth in DSP and networking applications.

Can the 71V3556SA133BGG8 operate in low-power sleep mode, and how is it controlled?

Yes, the 71V3556SA133BGG8 supports synchronous sleep mode via the ZZ pin. When ZZ is driven high, the internal clock is gated and power consumption drops to its minimum level while guaranteeing data retention. ZZ has an internal pulldown resistor, so it defaults to inactive (normal operation) when left unconnected. Sleep mode is fully compatible with industrial temperature operation (–40°C to +85°C).