Renesas 71V3556SA133BGGI

Overview

71V3556SA133BGGI from Renesas is a 3.3V 128K × 36-bit synchronous ZBT SRAM with Zero Bus Turnaround, 133 MHz operation (7.5 ns clock-to-data), pipelined outputs, and JTAG boundary scan support. It eliminates dead cycles between read/write transitions and supports 4-word linear or interleaved burst modes in high-speed networking and packet buffering applications.

For engineers reviewing the 71V3556SA133BGGI datasheet, 71V3556SA133BGGI pinout, 71V3556SA133BGGI application, or 71V3556SA133BGGI equivalent, key selection criteria include ZBT timing compliance, TQFP/BGA package compatibility, industrial temperature range (–40°C to +85°C), 3.3V I/O supply tolerance, and JTAG IEEE 1149.1 support for system-level testability.

Technical Context

The 71V3556SA133BGGI implements a fully synchronous, positive-edge-triggered architecture with address/control/data registers clocked on CLK rising edge. Its ZBT feature enables immediate bus turnaround-no idle cycles between consecutive reads and writes-by decoupling address load and data transfer via two-cycle latency (address loaded at cycle n, data accessed at n+2).

It integrates an on-chip 4-word burst counter controlled by ADV/LD and LBO pins, supports individual byte write (BW1–BW4) for partial-word updates, and includes optional IEEE 1149.1 JTAG boundary scan (TMS/TDI/TCK/TDO/TRST) for production test and debug in BGA packages.

Key Specifications

Pinout & Package

71V3556SA133BGGI is packaged in a 119-ball fine-pitch ball grid array (BGGI) per JEDEC MO-207AD, with 1.0 mm ball pitch and Pb-free (RoHS-compliant) finish. Pin functions are validated per Renesas datasheet 5281, revision Aug.06.21.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with 71V3556SA133BGGI, the TQFP alternative sacrifices JTAG testability but eases soldering and thermal dissipation, while the AS7C3256A offers lower cost at the expense of ZBT performance, burst capability, and extended temperature support.

Availability

71V3556SA133BGGI is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3556SA133BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3556SA series belongs to Renesas' high-performance synchronous SRAM product line, engineered specifically for zero-latency bus turnaround in real-time communications and control systems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V3556SA133BGGI?

The 71V3556SA133BGGI operates at up to 133 MHz with a guaranteed clock-to-data access time of 7.5 ns. This timing is specified under industrial conditions (–40°C to +85°C) with VDD and VDDQ at 3.3 V ±5%, and reflects the delay from CLK rising edge to valid data on I/O pins after address load. The 71V3556SA133BGGI achieves this performance using a fully pipelined register-to-register architecture.

Does the 71V3556SA133BGGI support burst mode, and how is burst order configured?

Yes, the 71V3556SA133BGGI supports 4-word burst mode via its integrated burst counter. Burst order is selected by the LBO (Linear/Interleaved Burst Order) pin: LBO = low enables linear addressing (A0, A1, A2, A3), while LBO = high selects interleaved order (A0, A2, A1, A3). The ADV/LD pin controls whether a new external address is loaded (ADV/LD low) or the internal counter is advanced (ADV/LD high).

How does the ZBT™ feature eliminate dead cycles in the 71V3556SA133BGGI?

The ZBT™ feature in the 71V3556SA133BGGI removes bus turnaround latency by allowing immediate transition between read and write operations without inserting idle cycles. This is achieved through separate address load and data transfer phases: address/control are registered on one CLK edge, and data appears two cycles later-enabling back-to-back transactions with no bus contention or wait states.

Is JTAG boundary scan supported on the 71V3556SA133BGGI, and which pins are used?

Yes, the 71V3556SA133BGGI includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are assigned to dedicated balls in the 119-ball BGA package (BGGI). TRST is asynchronous and may be left floating if unused; all JTAG pins have internal pull-ups per datasheet 5281.

What power supply requirements and sleep capability does the 71V3556SA133BGGI have?

The 71V3556SA133BGGI requires two 3.3 V supplies: VDD (core, 3.3 V ±5%) and VDDQ (I/O, 3.3 V ±5%). It supports low-power sleep mode via the ZZ pin: asserting ZZ high gates the internal clock and reduces power consumption to minimum while guaranteeing data retention. ZZ has an internal pulldown resistor, so it defaults to active-low operation.