Renesas 71V3556SA133BGGI8

Overview

71V3556SA133BGGI8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 133 MHz clock frequency, 3.5 ns clock-to-data access time, and zero bus turnaround architecture. It features pipelined outputs, 4-word burst capability (linear or interleaved), individual byte write control (BW1–BW4), and optional IEEE 1149.1 JTAG boundary scan - deployed in high-speed networking packet buffers and telecom line-card memory subsystems.

For engineers reviewing the 71V3556SA133BGGI8 datasheet, 71V3556SA133BGGI8 pinout, 71V3556SA133BGGI8 application, or 71V3556SA133BGGI8 equivalent, key selection criteria include ZBT™ bus turnaround elimination, industrial temperature support (–40°C to +85°C), TQFP/BGA package compatibility, and synchronous 3.3V I/O interface timing compliance for backplane-attached memory controllers.

Technical Context

The 71V3556SA133BGGI8 implements a fully synchronous, positive-edge-triggered architecture with address/control/data registers clocked on CLK rising edge. Its ZBT™ feature eliminates dead cycles between read/write transitions by decoupling bus direction control from OE - output enable is internally synchronized and requires no external timing management.

It integrates a 4-word burst counter with LBO-selectable linear/interleaved addressing, three chip enables (CE1, CE2, CE2) supporting depth expansion, and an optional JTAG TAP controller compliant with IEEE 1149.1. The device supports sleep mode (ZZ pin) for low-power retention and uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies.

Key Specifications

Pinout & Package

Packaged in a 119-ball fine-pitch BGA (BGG119), JEDEC-standard footprint, 12 mm × 12 mm body size, 0.8 mm ball pitch. Pinout validated per IDT document 5281 drw 13A (128K×36 BG119 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1356BV133BZC and AS7C33128PFSI-133BIN, the 71V3556SA133BGGI8 uniquely delivers ZBTTM operation, integrated burst counter, and JTAG testability - making it the only option among the three qualified for uninterrupted 133 MHz packet buffer operation in telecom infrastructure.

Availability

71V3556SA133BGGI8 is available at Aetrix Electronics and suitable for packet buffer memory, telecom line card cache, and industrial protocol gateway applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71V3556SA133BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), acquired by Renesas Electronics in 2019, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions.

The 71V3556SA133BGGI8 belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-turnaround, high-throughput memory subsystems in networking, telecommunications, and industrial control equipment.

FAQ

What is the memory organization and total capacity of the 71V3556SA133BGGI8?

The 71V3556SA133BGGI8 is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports 36-bit wide data paths common in network processor interfaces and FPGA-based packet processing engines. Each access retrieves or stores one 36-bit word, and the device supports 4-word burst operations for efficient sequential access.

Does the 71V3556SA133BGGI8 support industrial temperature operation?

Yes, the 71V3556SA133BGGI8 is rated for industrial temperature operation from –40°C to +85°C. This rating is confirmed in the "Recommended Operating Temperature and Supply Voltage" table (5281 tbl 05) and applies to the BGGI8 suffix variant. It ensures reliable functionality in uncontrolled ambient environments such as outdoor telecom cabinets and factory-floor gateways.

How does the ZBTTM feature eliminate bus turnaround cycles in the 71V3556SA133BGGI8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V3556SA133BGGI8 removes dead cycles between read and write operations by internally managing bus direction control. Unlike conventional SRAMs requiring OE and R/W coordination with turnaround delays, the 71V3556SA133BGGI8 uses a fully pipelined, synchronous architecture where the output buffer enable is clocked and synchronized - allowing immediate transition from write to read (or vice versa) without bus idle time.

What package type and pin count does the 71V3556SA133BGGI8 use?

The 71V3556SA133BGGI8 uses a 119-ball fine-pitch ball grid array (fBGA) package, designated BGG119. It conforms to JEDEC MO-245, has a 12 mm × 12 mm body size, and 0.8 mm ball pitch. Pinout matches the 128K×36 configuration shown in IDT document 5281 drw 13A, including dedicated JTAG pins (TMS/TDI/TCK/TDO/TRST) and ZZ sleep mode input.

Is JTAG boundary scan supported on the 71V3556SA133BGGI8, and what signals are required?

Yes, the 71V3556SA133BGGI8 supports optional IEEE 1149.1-compliant JTAG boundary scan. Required signals are TMS (Test Mode Select), TDI (Test Data Input), TCK (Test Clock), TDO (Test Data Output), and optional TRST (JTAG Reset). All are dedicated pins in the BGG119 package, with internal pullups on TMS, TDI, TCK, and TRST - enabling robust in-system test without external biasing components.