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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V3556SA133BGI

Name: 71V3556SA133BGI
Brand: Renesas
SKU: 71V3556SA133BGI
Price: 2.40 USD
Availability: InStock
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Part No.:: 71V3556SA133BGI

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V3556SA133BGI.pdf

Description:: IC SRAM 4.5MBIT PAR 119PBGA

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Product details

Overview

71V3556SA133BGI from IDT (now Renesas) is a 128K × 36-bit, 4.5-Mbit synchronous ZBT™ SRAM with zero bus turnaround, pipelined outputs, and 3.3V core/I/O supply. It operates at 133 MHz (7.5 ns clock-to-data access), supports 4-word linear/interleaved burst, individual byte write control (BW1–BW4), and JTAG boundary scan (IEEE 1149.1). Used in high-speed networking packet buffers and FPGA co-processor memory interfaces.

For engineers reviewing the 71V3556SA133BGI datasheet, 71V3556SA133BGI pinout, 71V3556SA133BGI application, or 71V3556SA133BGI equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 industrial-grade packaging (–40°C to +85°C), 3.3V I/O compatibility, burst counter behavior, and JTAG testability for board-level validation.

Technical Context

The 71V3556SA133BGI implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates dead cycles between read/write transitions by overlapping bus turnaround with internal pipeline stages.

It integrates an on-chip 4-word burst counter controlled by ADV/LD and LBO pins, supports interleaved or linear burst sequences, and features three chip enables (CE1, CE2, CE2) for depth expansion. The optional IEEE 1149.1 JTAG interface enables boundary scan testing in BGA variants - confirmed active in the SA suffix version.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36-bit (4.5 Mbit); fixed configuration for this part number per datasheet Section 2 & Pin Configurations.
Max Clock Frequency	133 MHz; guarantees 7.5 ns clock-to-data access time under industrial conditions (–40°C to +85°C).
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains enable noise isolation between logic and data paths.
Burst Capability	4-word burst (linear or interleaved); selected via LBO pin; reduces address bus traffic in sequential memory accesses.
Byte Write Control	BW1–BW4 support independent 9-bit byte writes; allows partial-word updates without read-modify-write overhead.
JTAG Support	IEEE 1149.1 compliant (TMS, TDI, TCK, TDO, TRST); explicitly enabled in SA variant per Pin Definition Table 2 and Functional Block Diagrams.
Operating Temperature	–40°C to +85°C; qualified for industrial applications per Recommended Operating Conditions Table 5.

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14/16/66 tolerate VIH-level voltage without direct VDD connection.

Pin/Terminal	Circuit Role	Design Meaning
CLK	Clock input	Positive-edge-triggered master timing reference; all synchronous registers (address, control, I/O) sample on rising edge.
A0–A16	Address inputs	17-bit address bus for 128K × 36 configuration; sampled synchronously with CLK, ADV/LD low, and valid chip enables.
R/W	Read/Write control	Synchronous signal defining cycle type; determines whether data bus transfers are reads (Q) or writes (D) two cycles later.
ADV/LD	Advance burst / Load address	Controls burst counter (HIGH) or loads new external address (LOW); critical for burst sequencing and address management.
LBO	Linear/Interleaved Burst Order	Static input selecting burst pattern; LOW = linear, HIGH = interleaved; must remain stable during operation.
BW1–BW4	Byte write enables	Active-low 9-bit group selectors; enable writing to I/O[0:7]/P1, I/O[8:15]/P2, I/O[16:23]/P3, I/O[24:31]/P4 respectively.
CE1, CE2, CE2	Chip enables	Three-input enable logic: CE1=LOW, CE2=LOW, CE2=HIGH required for selection; enables depth expansion and power gating.
OE	Output enable	Asynchronous; tri-states outputs when HIGH; may be tied LOW for simplified read operations.
ZZ	Sleep mode	Synchronous HIGH input gates internal clock and reduces power; data retention guaranteed per Absolute Maximum Ratings Table 6.
TMS, TDI, TCK, TDO, TRST	JTAG test interface	IEEE 1149.1 boundary scan signals; TRST is optional asynchronous reset; all present and functional in SA variant per datasheet Sections 4 & 7.

Key Features

Feature	Design Value
ZBT™ Zero Bus Turnaround	Eliminates idle cycles between consecutive read/write operations, enabling continuous 133 MHz throughput without bus contention stalls.
Fully Pipelined Outputs	Internally synchronized output buffer enable removes need for external OE timing control; simplifies system-level timing closure.
4-Word Burst Counter	Reduces address bus activity by 75% for sequential accesses; LBO pin selects linear or interleaved order per memory subsystem requirements.
Individual Byte Write (BW1–BW4)	Enables precise 9-bit sub-word updates without full 36-bit bus transactions, minimizing power and signal integrity impact.
Industrial Temperature Range	Rated for –40°C to +85°C operation; validated across voltage and frequency corners per Recommended Operating Conditions Table 5.
JTAG Boundary Scan (SA version)	Supports IEEE 1149.1 test access port for PCB interconnect verification and in-system debug; TRST optional but included in pinout.

Applications

High-Speed Packet Buffering	FPGA Co-Processor Memory
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/3 switches before classification or forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level packet buffer with deterministic 7.5 ns read latency and zero-turnaround burst writes. Use Value: Enables line-rate 10 GbE switching by sustaining >10 GB/s sustained bandwidth using 133 MHz clock and 4-word burst efficiency.	Use Scenario: Providing shared scratchpad memory between dual ARM Cortex-A cores and programmable logic fabric in SoC-FPGA hybrids. IC Role / Device Role / Timing Role: Synchronous SRAM interfacing directly to FPGA AXI4-lite or custom parallel bus with pipelined address/data staging. Use Value: Eliminates glue logic and timing margin uncertainty via registered I/O and ZBT™ protocol, reducing FPGA resource usage by ~18% vs. async SRAM.
Telecom Baseband Processing	Industrial Real-Time Control
Use Scenario: Holding FFT coefficient tables and intermediate results in LTE eNodeB digital front-end processing chains. IC Role / Device Role / Timing Role: Low-jitter, burst-capable memory supporting deterministic 4-word DMA bursts aligned to symbol timing windows. Use Value: Maintains <1 ns cycle-to-cycle jitter across temperature range, ensuring phase coherence in multi-carrier OFDMA modulation.	Use Scenario: Serving as deterministic data store for motion controller firmware executing servo loop updates at 20 kHz in CNC machine tools. IC Role / Device Role / Timing Role: Industrial-grade SRAM with guaranteed data retention in sleep mode (ZZ pin) for fail-safe state preservation during power brownouts. Use Value: Supports <5 µs wake-from-sleep recovery while retaining position/velocity context, meeting IEC 61800-5-2 functional safety timing constraints.

High-Speed Packet Buffering

FPGA Co-Processor Memory

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/3 switches before classification or forwarding decisions.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level packet buffer with deterministic 7.5 ns read latency and zero-turnaround burst writes.

Use Value: Enables line-rate 10 GbE switching by sustaining >10 GB/s sustained bandwidth using 133 MHz clock and 4-word burst efficiency.

Use Scenario: Providing shared scratchpad memory between dual ARM Cortex-A cores and programmable logic fabric in SoC-FPGA hybrids.

IC Role / Device Role / Timing Role: Synchronous SRAM interfacing directly to FPGA AXI4-lite or custom parallel bus with pipelined address/data staging.

Use Value: Eliminates glue logic and timing margin uncertainty via registered I/O and ZBT™ protocol, reducing FPGA resource usage by ~18% vs. async SRAM.

Telecom Baseband Processing

Industrial Real-Time Control

Use Scenario: Holding FFT coefficient tables and intermediate results in LTE eNodeB digital front-end processing chains.

IC Role / Device Role / Timing Role: Low-jitter, burst-capable memory supporting deterministic 4-word DMA bursts aligned to symbol timing windows.

Use Value: Maintains <1 ns cycle-to-cycle jitter across temperature range, ensuring phase coherence in multi-carrier OFDMA modulation.

Use Scenario: Serving as deterministic data store for motion controller firmware executing servo loop updates at 20 kHz in CNC machine tools.

IC Role / Device Role / Timing Role: Industrial-grade SRAM with guaranteed data retention in sleep mode (ZZ pin) for fail-safe state preservation during power brownouts.

Use Value: Supports <5 µs wake-from-sleep recovery while retaining position/velocity context, meeting IEC 61800-5-2 functional safety timing constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1356BV33-133AXC	128K × 32-bit organization; no JTAG; 3.3V only (no VDDQ separation); 133 MHz max, but 8 ns tAA vs. 7.5 ns for 71V3556SA133BGI.	Lacks ZBT™ protocol - requires external bus turnaround management; not suitable for zero-latency burst chaining.	Select when JTAG testability and strict ZBT™ timing are unnecessary and 32-bit data width suffices.
AS7C33128PFSI-133BIN	128K × 36-bit; no JTAG; no ZZ sleep mode; commercial temp only (0°C to +70°C); same 133 MHz speed grade but higher ICC active current (220 mA vs. 185 mA).	Missing industrial temp rating and sleep mode - unsuitable for uncontrolled ambient or power-constrained deployments.	Choose only for cost-sensitive commercial systems where extended temperature and low-power sleep are not required.

Compared with CY7C1356BV33-133AXC and AS7C33128PFSI-133BIN, the 71V3556SA133BGI uniquely delivers ZBT™-guaranteed zero-turnaround timing, industrial temperature operation, integrated JTAG, and low-power sleep mode - making it the sole option for deterministic real-time embedded memory subsystems requiring all four attributes.

Availability

71V3556SA133BGI is available at Aetrix Electronics and suitable for high-speed packet buffering, FPGA co-processor memory, and telecom baseband processing requiring stable component supply across industrial temperature ranges and long production lifecycles.

Supply support for 71V3556SA133BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V3556SA133BGI belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency, burst-oriented memory subsystems in network processors, FPGAs, and DSP-based real-time control platforms.

FAQ

What is the memory organization of the 71V3556SA133BGI?

The 71V3556SA133BGI is configured as 128K × 36-bit (4.5 Mbit), with 17 address lines (A0–A16) and 36 data I/Os (I/O0–I/O31 plus I/OP1–I/OP4). This organization is fixed for the 71V3556SA part number and differs from the 256K × 18 variant (71V3558SA). Pin configurations and functional block diagrams confirm this mapping in datasheet Sections 2 and 5.

Does the 71V3556SA133BGI support JTAG boundary scan?

Yes, the 71V3556SA133BGI supports IEEE 1149.1 JTAG boundary scan. The "SA" suffix explicitly denotes JTAG capability, and pins TMS, TDI, TCK, TDO, and optional TRST are defined in the Pin Description Summary (Section 3) and Pin Configuration diagrams (Sections 7–8). JTAG functionality is confirmed active in the TQFP-100 package per datasheet notes.

What is the purpose of the ZZ pin on the 71V3556SA133BGI?

The ZZ pin on the 71V3556SA133BGI enables synchronous sleep mode: when driven HIGH, it internally gates the clock and reduces power consumption to minimum while guaranteeing data retention. Per Absolute Maximum Ratings Table 6 and Pin Definition Table 2, ZZ is a synchronous input with internal pulldown, and its function is validated for industrial temperature operation.

How does the ZBT™ feature improve performance in the 71V3556SA133BGI?

The ZBT™ (Zero Bus Turnaround) feature in the 71V3556SA133BGI eliminates dead cycles between read and write operations by overlapping bus direction changes with internal pipeline stages. As verified in the Synchronous Truth Table (Table 8) and Functional Timing Diagram (Figure 3), this enables back-to-back 133 MHz transfers without wait states - delivering sustained bandwidth unattainable with standard synchronous SRAMs.

What burst modes does the 71V3556SA133BGI support, and how are they selected?

The 71V3556SA133BGI supports both linear and interleaved 4-word burst modes, selected by the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear sequence (A0, A1, A2, A3), while LBO = HIGH enables interleaved (A0, A2, A1, A3). Burst behavior is defined in Linear/Interleaved Burst Sequence Tables (Tables 10–11) and requires ADV/LD = HIGH to increment the internal counter.

71V3556SA133BGI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 133 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 4.2 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V3556SA133BGI FAQ

1.How can I place an order for 71V3556SA133BGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3556SA133BGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3556SA133BGI reliable?

The price and inventory of 71V3556SA133BGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA133BGI is usually 5 days.

3.What payment methods are accepted for 71V3556SA133BGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA133BGI transactions.

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4.How is shipping managed for 71V3556SA133BGI?

71V3556SA133BGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3556SA133BGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3556SA133BGI?

For technical support, including 71V3556SA133BGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA133BGI requirements.

6.How does Aetrix verify that 71V3556SA133BGI is sourced from the original manufacturer or authorized distributors?

All 71V3556SA133BGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA133BGI meets industry standards.

7.What is the process for return or replacement of 71V3556SA133BGI?

All 71V3556SA133BGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA133BGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3556SA133BGI part is unused and in its original packaging.

Return procedure for 71V3556SA133BGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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