Renesas 71V3556SA133BGI8
- Part No.:
- 71V3556SA133BGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3556SA133BGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V3556SA133BGI8 from IDT (now Renesas) is a 128K × 36-bit, 4.5-Mbit, 3.3V synchronous ZBT™ SRAM with zero bus turnaround, pipelined outputs, and 133 MHz operation (7.5 ns clock-to-data access). It features 4-word burst capability (linear/interleaved), individual byte write control (BW1–BW4), and JTAG boundary scan (IEEE 1149.1). Used in high-speed networking line cards and packet buffer subsystems requiring deterministic latency and no dead cycles between read/write transitions.
For engineers reviewing the 71V3556SA133BGI8 datasheet, 71V3556SA133BGI8 pinout, 71V3556SA133BGI8 application, or 71V3556SA133BGI8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), 3.3V core/I/O supply tolerance, and JTAG-enabled testability for board-level validation.
Technical Context
The 71V3556SA133BGI8 implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates bus turnaround dead cycles by enabling immediate read-after-write or write-after-read transitions without wait states.
It integrates a 4-word burst counter controlled by ADV/LD and LBO pins, supports interleaved or linear addressing sequences, and uses internal output buffer synchronization to remove OE timing constraints. The device includes three chip enables (CE1, CE2, CE2) for depth expansion and optional IEEE 1149.1 JTAG for boundary scan testing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports high-bandwidth data paths in telecom and packet switching applications. |
| Max Clock Frequency | 133 MHz; enables 7.5 ns clock-to-data access time for sub-8 ns deterministic read/write latency. |
| Supply Voltage | VDD = VDDQ = 3.3 V ±5%; dual-rail 3.3V core and I/O supplies simplify power delivery in mixed-signal systems. |
| Burst Capability | 4-word burst (linear or interleaved); reduces address bus traffic and improves throughput in sequential access patterns. |
| Operating Temperature | –40°C to +85°C industrial grade; qualified for deployment in base station, router, and industrial control environments. |
| JTAG Support | IEEE 1149.1-compliant boundary scan (TMS/TDI/TCK/TDO/TRST); enables automated PCB test and interconnect verification. |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard); compatible with standard SMT assembly and thermal management practices. |
Pinout & Package
71V3556SA133BGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 marked via corner notch; top-side marking includes "71V3556SA133BGI8" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled. |
| CLK | System Clock Input | Primary timing reference; all synchronous operations triggered on rising edge; defines tCYC = 7.5 ns (133 MHz). |
| R/W | Read/Write Control | Synchronous signal determining cycle type; data transfer occurs two clocks after R/W assertion. |
| ADV/LD | Burst Counter Control | LOW loads new external address; HIGH advances internal burst counter-enables seamless 4-word burst sequencing. |
| BW1–BW4 | Byte Write Enables | Four independent active-low signals controlling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4). |
| CE1, CE2, CE2 | Chip Enable Inputs | Three enables (CE1/CE2 active-low, CE2 active-high) allow flexible depth expansion and hierarchical memory decoding. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; registered input/output with full pipelining and ZBT™ timing. |
| LBO | Burst Order Select | Static input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) burst sequence per JEDEC standards. |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | IEEE 1149.1 boundary scan signals; TRST is optional asynchronous reset; all sampled synchronously except TRST. |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3V core supply; VDDQ = 3.3V I/O supply; separate rails reduce noise coupling between logic and I/O domains. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read/write transitions-enables back-to-back accesses with no wait states in high-throughput buffers. |
| Pipelined Output Buffer Enable | Internally synchronized OE removes external timing constraints; outputs remain valid across clock boundaries without glitching. |
| 4-Word Burst Counter | Reduces address bus activity by 75% during sequential accesses; LBO pin selects linear or interleaved order per JEDEC burst protocols. |
| Individual Byte Write Control | Four BWx pins enable selective 9-bit writes-critical for partial-word updates in packet header manipulation and descriptor management. |
| Three Chip Enables | Supports depth expansion without external logic; CE1/CE2/CE2 combination allows hierarchical memory mapping in multi-SRAM systems. |
| JTAG Boundary Scan (IEEE 1149.1) | Enables automated PCB interconnect testing, fault isolation, and production validation-reduces test development time and cost. |
Applications
| Packet Buffer in Gigabit Ethernet Switch ASIC | Line Card Memory in Carrier-Grade Routers |
|---|---|
Use Scenario: Stores ingress/egress packet payloads and metadata in a 10 Gbps line card with strict latency budgets. IC Role / Device Role / Timing Role: High-speed ZBT™ SRAM acting as primary packet buffer with zero-turnaround read/write for cut-through forwarding. Use Value: 133 MHz operation and pipelined outputs deliver deterministic 7.5 ns access, enabling sub-100 ns round-trip buffer latency at full line rate. |
Use Scenario: Implements descriptor tables and queue management memory in distributed forwarding engines of modular routers. IC Role / Device Role / Timing Role: Synchronous SRAM providing burst-accessible control memory for scheduler and QoS engines. Use Value: 4-word burst mode and individual byte writes accelerate descriptor updates and reduce CPU overhead in real-time traffic shaping. |
| Baseband Processing Memory in 4G/LTE eNodeB | Industrial Real-Time Control Buffer |
Use Scenario: Buffers IQ samples and MAC-layer protocol data between FPGA-based PHY and ARM-based control plane. IC Role / Device Role / Timing Role: Deterministic-latency SRAM interfacing between high-speed serial links and processor subsystems. Use Value: Industrial temperature rating (–40°C to +85°C) and JTAG testability ensure reliability in uncooled outdoor radio units. |
Use Scenario: Holds motion control command queues and sensor fusion buffers in servo drive controllers with <1 µs jitter requirements. IC Role / Device Role / Timing Role: Low-jitter, fully synchronous memory supporting deterministic interrupt response and cyclic execution. Use Value: Clock Enable (CEN) pin allows precise suspension/resumption of memory operations during critical real-time task windows. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV33-133AXC | 128K × 36-bit, 133 MHz, 3.3V, but lacks JTAG and ZBT™-specific timing optimization; uses conventional synchronous interface. | No zero-bus-turnaround guarantee; requires external OE control and has longer minimum read/write turnaround cycles. | Choose when JTAG testability is unnecessary and legacy timing margins permit non-ZBT™ behavior. |
| AS7C33128PFSI-133BIN | 128K × 36-bit, 133 MHz, 3.3V, supports burst and pipelining but omits ADV/LD-controlled burst counter and individual BWx pins. | Fixed burst order only; no linear/interleaved selection or per-byte write granularity-limits flexibility in descriptor-heavy workloads. | Prefer where simplified control logic suffices and per-byte update capability is not required. |
Compared with CY7C1356BV33-133AXC and AS7C33128PFSI-133BIN, the 71V3556SA133BGI8 uniquely delivers guaranteed ZBT™ timing, JTAG testability, and programmable burst control-making it optimal for carrier-grade infrastructure demanding deterministic latency and production test coverage.
Availability
71V3556SA133BGI8 is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom line cards, and industrial real-time control systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for 71V3556SA133BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.
The 71V3556SA133BGI8 belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-latency memory buffering in packet-switched networks, baseband processing, and real-time control systems demanding deterministic timing and burst efficiency.
FAQ
What is the maximum operating frequency of the 71V3556SA133BGI8?
The 71V3556SA133BGI8 is rated for 133 MHz operation, corresponding to a 7.5 ns clock period and 7.5 ns clock-to-data access time. This frequency is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions, as specified in the official Renesas datasheet revision Aug.06.21.
Does the 71V3556SA133BGI8 support JTAG boundary scan?
Yes, the 71V3556SA133BGI8 includes full IEEE 1149.1-compliant JTAG boundary scan functionality with dedicated TMS, TDI, TCK, TDO, and optional TRST pins. This feature is explicitly confirmed in the "SA" variant designation and functional block diagram in the datasheet, enabling PCB interconnect testing and system-level diagnostics.
How does the ZBT™ feature eliminate dead cycles in the 71V3556SA133BGI8?
The ZBT™ architecture in the 71V3556SA133BGI8 allows immediate transition from write to read (or read to write) without inserting idle cycles. This is achieved via internal pipeline staging and synchronized output enable-ensuring data valid on the bus two clocks after command assertion, regardless of direction change, as verified in the synchronous truth table and timing diagrams.
What memory configuration does the 71V3556SA133BGI8 implement?
The 71V3556SA133BGI8 implements a fixed 128K × 36-bit organization (4.5 Mbit total), distinct from the 256K × 18-bit variant (71V3558SA). This configuration is confirmed by pin assignments (A0–A16, 36 I/O lines), functional block diagram labeling, and ordering information in the datasheet-no configuration register or mode pin alters this topology.
Is the 71V3556SA133BGI8 available in industrial temperature grade?
Yes, the "BGI8" suffix denotes industrial temperature grade (–40°C to +85°C), as defined in the ordering information section of the datasheet. Absolute maximum ratings, recommended operating conditions, and timing specifications are all validated across this range, making the 71V3556SA133BGI8 suitable for base station, router, and industrial control deployments.
71V3556SA133BGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3556SA133BGI8 FAQ
1.How can I place an order for 71V3556SA133BGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA133BGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA133BGI8 reliable?
The price and inventory of 71V3556SA133BGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA133BGI8 is usually 5 days.
3.What payment methods are accepted for 71V3556SA133BGI8?
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Once your 71V3556SA133BGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA133BGI8?
For technical support, including 71V3556SA133BGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA133BGI8 requirements.
6.How does Aetrix verify that 71V3556SA133BGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3556SA133BGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA133BGI8 meets industry standards.
7.What is the process for return or replacement of 71V3556SA133BGI8?
All 71V3556SA133BGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA133BGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA133BGI8 part is unused and in its original packaging.
Return procedure for 71V3556SA133BGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA133BGI8 Tags

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