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Renesas 71V3556SA133BQ
- Part No.:
- 71V3556SA133BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3556SA133BQ.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V3556SA133BQ from IDT (now Renesas) is a 3.3V, 128K × 36-bit synchronous ZBT™ SRAM with zero bus turnaround, 133 MHz operation (7.5 ns clock-to-data), pipelined outputs, and integrated burst counter. It supports linear/interleaved 4-word bursts and individual byte write control (BW1–BW4), enabling high-throughput memory interfacing in network packet buffers and telecom line cards.
For engineers reviewing the 71V3556SA133BQ datasheet, 71V3556SA133BQ pinout, 71V3556SA133BQ application, or 71V3556SA133BQ equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O tolerance, JTAG testability (IEEE 1149.1), and industrial temperature support (–40°C to +85°C).
Technical Context
The 71V3556SA133BQ implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates dead cycles between read/write transitions by overlapping bus turnaround with internal pipeline stages.
It integrates a programmable burst counter (LBO-selectable linear/interleaved), three chip enables (CE1, CE2, CE2) for depth expansion, and an optional IEEE 1149.1 JTAG interface with TMS/TDI/TCK/TDO/TRST pins - all implemented in a 3.3V CMOS process with separate VDD (core) and VDDQ (I/O) supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports x36 configuration only - defines fixed data bus width and address range (A0–A16). |
| Max Clock Frequency | 133 MHz; guarantees 7.5 ns clock-to-data access time - sets maximum system bus speed without wait states. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); enables interoperability with 3.3V logic families and reduces level-shifting overhead. |
| Burst Capability | 4-word burst (linear or interleaved via LBO pin); reduces address setup overhead and improves sequential throughput in packet buffering. |
| Operating Temperature | –40°C to +85°C (industrial grade); ensures reliability in base station, router, and industrial control environments. |
| JTAG Support | IEEE 1149.1 compliant (TMS/TDI/TCK/TDO/TRST); enables boundary-scan testing and in-system debug without external probes. |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard); provides mechanical compatibility with legacy PCB footprints and thermal performance for sustained burst operation. |
Pinout & Package
71V3556SA133BQ is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. The package supports industrial temperature operation and includes dedicated VDD/VDDQ/VSS planes for noise isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Positive-edge-triggered master timing reference; all synchronous registers (address, control, data I/O) sample on rising edge. |
| A0–A16 | Address inputs | 17-bit address bus for 128K-word addressing; sampled synchronously with CLK, ADV/LD low, and valid chip enables. |
| R/W | Read/Write control | Synchronous signal determining cycle type; read/write decision latched at load cycle, data transfer occurs two clocks later. |
| CE1, CE2, CE2 | Chip enable inputs | Three independent enables (CE1/CE2 active-low, CE2 active-high); any false condition initiates two-cycle deselect and tri-state output bus. |
| BW1–BW4 | Byte write enables | Four active-low signals controlling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); allows partial-word updates without read-modify-write. |
| ADV/LD | Advance/load control | Synchronous signal loading new address (ADV/LD = LOW) or incrementing burst counter (ADV/LD = HIGH); critical for burst sequencing. |
| LBO | Burst order select | Static input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) burst sequence; must remain stable during burst operation. |
| TMS, TDI, TCK, TDO, TRST | JTAG test interface | IEEE 1149.1 boundary-scan signals; TRST is optional asynchronous reset; all except TDO are inputs with internal pull-ups. |
| ZZ | Sleep mode input | Active-high synchronous sleep control; gates internal clock and reduces power while retaining data - pin mapped to physical pin 64 (TQFP). |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O bus | 36-bit bidirectional synchronous data path; input and output registers triggered on CLK rising edge; OE is asynchronous but typically tied low. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates idle cycles between read/write transitions - enables continuous back-to-back memory access in high-speed packet processing pipelines. |
| Pipelined Outputs with Internal OE Sync | Output buffer enable is internally synchronized to CLK - removes need for external OE timing control and simplifies FPGA/CPU interface design. |
| 4-Word Burst Counter with LBO Select | Reduces address bus traffic by 75% for sequential accesses; LBO pin allows runtime selection of linear (cache-friendly) or interleaved (DMA-optimized) ordering. |
| Individual Byte Write (BW1–BW4) | Enables atomic 9-bit updates without full-word read-modify-write - critical for protocol header manipulation and descriptor table maintenance. |
| Three Chip Enables for Depth Expansion | Supports seamless memory expansion beyond 128K×36 using CE1/CE2/CE2 logic - simplifies multi-SRAM designs without external decode logic. |
| Industrial Temp + JTAG Support | Validated operation from –40°C to +85°C with full IEEE 1149.1 test access - meets reliability and testability requirements for telecom infrastructure hardware. |
Applications
| Network Packet Buffer | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in switching ASICs before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with zero-turnaround read/write capability to sustain line-rate traffic. Use Value: Eliminates bus idle cycles during mixed read/write bursts, increasing effective throughput by up to 30% vs. conventional SSRAMs. |
Use Scenario: Holding ATM cell headers, signaling messages, and configuration tables in carrier-grade DSLAMs and OLTs. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 133 MHz access for real-time control plane operations. Use Value: Industrial temperature rating and JTAG testability ensure field-replaceable module compliance with Telcordia GR-63-CORE. |
| Baseband Processor Cache | Industrial PLC Data Log Buffer |
Use Scenario: Acting as instruction/data cache for DSP-based wireless baseband processors in 4G/LTE femtocells. IC Role / Device Role / Timing Role: Pipelined, burst-capable SRAM interfacing directly with TI C6000 or ADI SHARC processors. Use Value: 4-word burst mode matches processor burst fetch patterns, reducing external memory controller complexity and latency jitter. |
Use Scenario: Capturing sensor timestamps and analog measurements in ruggedized programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Industrial-grade SRAM with sleep mode (ZZ pin) for power-constrained edge nodes. Use Value: ZZ-enabled sleep mode cuts standby current to <100 µA while retaining data - extends battery life in uninterruptible logging applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-133BZI | 256K × 18-bit organization, same 133 MHz speed, but narrower data bus; no JTAG; different pinout (100-pin TQFP, non-ZBT). | Requires two devices for 36-bit width; lacks ZBT™ and burst counter - unsuitable for zero-turnaround protocols. | Select only if x18 bus width and absence of burst/JTAG are acceptable; verify PCB layout compatibility. |
| AS7C33128PFS-133BIN | 128K × 36-bit, 133 MHz, but asynchronous OE and no ZBT™; supports only single-word access - no burst or pipelined outputs. | Cannot replace 71V3556SA133BQ in burst-intensive applications; higher latency due to lack of pipelining and bus turnaround penalty. | Consider only for cost-sensitive, non-burst, non-real-time applications where ZBT™ and JTAG are unnecessary. |
Compared with CY7C1356BV18-133BZI and AS7C33128PFS-133BIN, the 71V3556SA133BQ uniquely delivers ZBT™ timing, 4-word burst, and IEEE 1149.1 JTAG in a single 128K×36 device - making it irreplaceable for telecom and networking systems requiring deterministic, high-throughput memory access with production testability.
Availability
71V3556SA133BQ is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, and industrial PLC data log buffers requiring stable component supply across extended product lifecycles.
Supply support for 71V3556SA133BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.
The 71V3556SA133BQ belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-turnaround, burst-capable memory subsystems in telecom infrastructure, enterprise networking, and real-time embedded systems.
FAQ
What is the memory organization and bus width of the 71V3556SA133BQ?
The 71V3556SA133BQ is a 128K × 36-bit synchronous SRAM, providing a 36-bit data bus (I/O0–I/O31 plus I/OP1–I/OP4) and 17 address lines (A0–A16). It does not support 256K × 18 configuration - that variant is the 71V3558SA133BQ. This fixed x36 organization targets high-throughput parallel interfaces in networking ASICs.
Does the 71V3556SA133BQ support JTAG boundary-scan testing?
Yes, the 71V3556SA133BQ includes a fully compliant IEEE 1149.1 JTAG interface with TMS, TDI, TCK, TDO, and optional TRST pins. These signals are implemented on dedicated pins in the TQFP-100 package and are functional per the "SA" suffix designation - confirming JTAG availability for production test and debug.
How does the ZBT™ feature eliminate bus turnaround cycles in the 71V3556SA133BQ?
The 71V3556SA133BQ achieves zero bus turnaround by overlapping the end of one memory cycle with the start of the next. Its internal pipeline allows a write completion and subsequent read initiation within a single clock period - no idle cycles are inserted between alternating read/write operations, unlike standard SSRAMs.
What is the function of the ZZ (sleep mode) pin on the 71V3556SA133BQ?
The ZZ pin on the 71V3556SA133BQ is a synchronous active-high input that gates the internal clock and places the device into ultra-low-power sleep mode while retaining memory contents. In sleep mode, core current drops significantly, and the I/O pins enter high-impedance - verified for industrial temperature operation.
Can the 71V3556SA133BQ operate with different burst sequences, and how is this controlled?
Yes, the 71V3556SA133BQ supports both linear and interleaved 4-word burst sequences. The LBO (Linear Burst Order) pin selects the mode: LBO = LOW enables linear order (A0, A1, A2, A3), while LBO = HIGH enables interleaved order (A0, A2, A1, A3). LBO is static and must not change during burst execution.
71V3556SA133BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3556SA133BQ FAQ
1.How can I place an order for 71V3556SA133BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA133BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA133BQ reliable?
The price and inventory of 71V3556SA133BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA133BQ is usually 5 days.
3.What payment methods are accepted for 71V3556SA133BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA133BQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3556SA133BQ?
71V3556SA133BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA133BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA133BQ?
For technical support, including 71V3556SA133BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA133BQ requirements.
6.How does Aetrix verify that 71V3556SA133BQ is sourced from the original manufacturer or authorized distributors?
All 71V3556SA133BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA133BQ meets industry standards.
7.What is the process for return or replacement of 71V3556SA133BQ?
All 71V3556SA133BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA133BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA133BQ part is unused and in its original packaging.
Return procedure for 71V3556SA133BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA133BQ Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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