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Renesas 71V3556SA133BQG
- Part No.:
- 71V3556SA133BQG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3556SA133BQG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,314
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Product details
Overview
71V3556SA133BQG from Renesas is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 133 MHz clock speed, 3.5 ns clock-to-data access time, zero bus turnaround architecture, and pipelined outputs. It operates in industrial temperature range (–40°C to +85°C) and is used in high-bandwidth packet buffering, network switch fabric control, and telecom line card memory subsystems.
For engineers reviewing the 71V3556SA133BQG datasheet, 71V3556SA133BQG pinout, 71V3556SA133BQG application, or 71V3556SA133BQG equivalent, key selection criteria include ZBT™ burst timing compliance, 100-pin TQFP package compatibility, JTAG IEEE 1149.1 support, and 3.3V I/O voltage tolerance with individual byte write capability.
Technical Context
The 71V3556SA133BQG implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address sequencing.
It supports 4-word interleaved or linear burst modes, optional boundary-scan JTAG (TMS/TDI/TCK/TDO/TRST), and three chip enables (CE1, CE2, CE2) for depth expansion. The device uses dual 3.3V supplies (VDD core, VDDQ I/O) and includes sleep mode (ZZ) for power reduction while retaining data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports high-density data buffering without external width expansion |
| Max Clock Frequency | 133 MHz; enables 133 MT/s throughput in pipelined systems with two-cycle latency |
| Clock-to-Data Access | 3.5 ns; guarantees deterministic read data valid window relative to CLK rising edge |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; decoupled core/I/O rails reduce noise coupling |
| Burst Capability | 4-word burst (linear/interleaved); reduces address bus traffic by 75% per burst sequence |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade embedded networking and base station applications |
| JTAG Support | IEEE 1149.1 compliant (TMS/TDI/TCK/TDO/TRST); enables in-system test and debug without external logic |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V3556SA133BQG" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Positive-edge-triggered master timing reference; all synchronous registers latch on rising edge |
| A0–A16 | Address inputs | 17-bit address bus for 128K-word addressing; latched synchronously with CLK, ADV/LD, and CEN |
| R/W | Read/Write control | Synchronous signal defining cycle type; determines data direction two cycles later |
| ADV/LD | Advance burst / Load address | Controls burst counter increment (HIGH) or new address load (LOW); critical for burst sequencing |
| LBO | Linear/Interleaved burst order | Static input selecting burst pattern; LBO = LOW → linear, HIGH → interleaved |
| BW1–BW4 | Byte write enables | Four independent active-low signals enabling 9-bit byte writes; allows partial-word updates |
| CE1, CE2, CE2 | Chip enable inputs | Three enables with mixed polarity (CE2 active-high); support flexible depth expansion and deselect timing |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O bus | 36-bit bidirectional synchronous bus; registered input/output paths ensure timing closure at 133 MHz |
| OE | Output enable | Asynchronous control; tri-states outputs immediately when HIGH-no clock dependency required |
| ZZ | Sleep mode input | Active-high synchronous entry into low-power retention mode; internal clock gating preserves data |
| TMS, TDI, TCK, TDO, TRST | JTAG boundary-scan interface | IEEE 1149.1-compliant test access port; TRST optional asynchronous reset (BGA only) |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates idle cycles between read/write transitions-enables continuous back-to-back memory access |
| Internally synchronized OE | Removes need for external OE timing control; output drivers respond asynchronously while internal logic remains synchronous |
| 4-word burst counter | Reduces external address generation overhead; supports both linear and interleaved sequences via LBO pin |
| Individual byte write (BW1–BW4) | Enables precise 9-bit sub-word writes without masking logic; simplifies memory-mapped peripheral interfacing |
| Three chip enables (CE1/CE2/CE2) | Allows seamless depth expansion across multiple devices with no external decode logic |
| Optional JTAG boundary scan | Supports IEEE 1149.1 test infrastructure for PCB-level interconnect verification and in-system programming |
Applications
| Network Packet Buffering | Telecom Line Card Control Memory |
|---|---|
|
Use Scenario: Storing variable-length Ethernet/IP packets in ingress/egress queues of multi-gigabit switches. IC Role / Device Role / Timing Role: High-speed, low-latency buffer memory with zero-turnaround burst reads/writes for wire-speed forwarding. Use Value: 133 MHz operation and 3.5 ns access enable real-time packet reordering without pipeline stalls. |
Use Scenario: Holding configuration tables, call setup state, and signaling protocol buffers in DSLAM or OLT line cards. IC Role / Device Role / Timing Role: Synchronous SRAM serving as control-plane working memory with deterministic access for real-time signaling stacks. Use Value: Industrial temperature rating and JTAG support ensure reliability and testability in carrier-grade field deployments. |
| Baseband Processing Subsystem | Industrial PLC Data Logging Buffer |
|
Use Scenario: Temporary storage of FFT coefficients, channel estimates, and symbol buffers in LTE/5G baseband FPGAs. IC Role / Device Role / Timing Role: Pipelined, burst-capable memory interfaced directly to FPGA fabric for low-jitter data streaming. Use Value: Registered I/O and 100-pin TQFP simplify FPGA pinout routing while maintaining 133 MT/s throughput. |
Use Scenario: Capturing sensor timestamps and process variables during transient events in programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile-retentive buffer (with external backup) for high-integrity event logging under brownout conditions. Use Value: ZZ sleep mode reduces standby current to <100 µA while preserving data-critical for battery-backed operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV133BZC | 128K × 36-bit, 133 MHz, but lacks JTAG and ZZ sleep mode; uses different pinout (119-ball BGA) | Not suitable where boundary-scan test or low-power sleep is required; better for cost-sensitive BGA-only designs | Select only if JTAG and sleep mode are unnecessary and BGA footprint is acceptable |
| AS7C33128PFSI-133 | 128K × 36-bit, 133 MHz, no ZBT™ architecture-uses standard synchronous SRAM timing with OE-controlled output enable | Introduces 1–2 cycle dead time between read/write; requires external OE timing management | Choose only when ZBT™ timing is not required and legacy synchronous SRAM interface is preferred |
Compared with CY7C1356BV133BZC and AS7C33128PFSI-133, the 71V3556SA133BQG uniquely delivers ZBT™ zero-turnaround performance, integrated JTAG, and synchronous sleep mode-all in a 100-pin TQFP package optimized for industrial thermal and test requirements.
Availability
71V3556SA133BQG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card control memory, and baseband processing subsystems requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.
Supply support for 71V3556SA133BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3556SA133BQG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in networking and communications equipment where bus efficiency and deterministic timing are critical.
FAQ
What is the memory organization and total capacity of the 71V3556SA133BQG?
The 71V3556SA133BQG is organized as 128K words × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports wide-data-path applications such as packet buffering and DSP coefficient storage without external width expansion.
Does the 71V3556SA133BQG support JTAG boundary-scan testing?
Yes, the 71V3556SA133BQG includes full IEEE 1149.1-compliant JTAG support with dedicated TMS, TDI, TCK, TDO, and optional TRST pins. This enables in-system test, debug, and programming without requiring external test logic or board-level probes.
How does the ZBT™ feature improve system performance in the 71V3556SA133BQG?
The ZBT™ (Zero Bus Turnaround) feature in the 71V3556SA133BQG eliminates dead cycles between consecutive read and write operations. By internally managing bus direction and timing, it enables back-to-back memory accesses-increasing effective bandwidth and reducing controller overhead in high-speed switching applications.
What is the function of the ADV/LD and LBO pins on the 71V3556SA133BQG?
ADV/LD controls whether the internal burst counter increments (HIGH) or loads a new external address (LOW). LBO selects burst order: LOW enables linear addressing, HIGH enables interleaved addressing. Both are synchronous inputs critical for burst-mode operation.
Can the 71V3556SA133BQG operate in low-power mode, and how is it enabled?
Yes, the 71V3556SA133BQG supports low-power sleep mode via the ZZ pin. When ZZ is driven HIGH synchronously, the internal clock is gated and power consumption drops significantly while data retention is guaranteed-ideal for intermittent operation in industrial PLCs.
71V3556SA133BQG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3556SA133BQG FAQ
1.How can I place an order for 71V3556SA133BQG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA133BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA133BQG reliable?
The price and inventory of 71V3556SA133BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA133BQG is usually 5 days.
3.What payment methods are accepted for 71V3556SA133BQG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA133BQG transactions.
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4.How is shipping managed for 71V3556SA133BQG?
71V3556SA133BQG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA133BQG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA133BQG?
For technical support, including 71V3556SA133BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA133BQG requirements.
6.How does Aetrix verify that 71V3556SA133BQG is sourced from the original manufacturer or authorized distributors?
All 71V3556SA133BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA133BQG meets industry standards.
7.What is the process for return or replacement of 71V3556SA133BQG?
All 71V3556SA133BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA133BQG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA133BQG part is unused and in its original packaging.
Return procedure for 71V3556SA133BQG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA133BQG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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