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Renesas 71V3556SA133BQG8
- Part No.:
- 71V3556SA133BQG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3556SA133BQG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,330
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Product details
Overview
71V3556SA133BQG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 133 MHz operation, 3.5 ns clock-to-data access, zero bus turnaround architecture, and pipelined outputs in a 165-ball fine-pitch BGA (BQG) package. It enables high-throughput memory interfacing in network packet buffers and telecom line cards.
For engineers reviewing the 71V3556SA133BQG8 datasheet, 71V3556SA133BQG8 pinout, 71V3556SA133BQG8 application, or 71V3556SA133BQG8 equivalent, key selection criteria include ZBT™ burst timing compliance, 3.3V I/O voltage tolerance, industrial temperature support (–40°C to +85°C), JTAG IEEE 1149.1 test interface availability, and 4-word interleaved/linear burst capability.
Technical Context
The 71V3556SA133BQG8 implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates dead cycles between read/write transitions via internal burst counter coordination and dual-phase pipeline staging - data output occurs two clocks after address/control registration.
It supports 4-word burst sequences (linear or interleaved via LBO pin), individual byte write control (BW1–BW4), three chip enables (CE1, CE2, CE2) for depth expansion, and optional boundary-scan JTAG (TMS/TDI/TCK/TDO/TRST) compliant with IEEE 1149.1. Sleep mode (ZZ pin) reduces power while retaining data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports high-bandwidth parallel data paths in telecom and packet-switching systems. |
| Max Clock Frequency | 133 MHz; enables 133 MT/s sustained throughput with deterministic 3.5 ns clock-to-data access timing. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); allows direct interfacing with 3.3V logic families without level translation. |
| Burst Capability | 4-word burst (interleaved or linear); reduces address bus overhead and improves sequential access efficiency in cache-like applications. |
| Operating Temperature | –40°C to +85°C industrial grade; qualified for deployment in base station, router, and industrial control environments. |
| JTAG Support | IEEE 1149.1-compliant (TMS/TDI/TCK/TDO/TRST); enables in-system test, debug, and boundary-scan verification during production and field service. |
| Package | 165-ball fine-pitch BGA (BQG); JEDEC-standard footprint optimized for high-density PCB layouts with thermal and signal integrity advantages over TQFP. |
Pinout & Package
71V3556SA133BQG8 is packaged in a 165-ball fine-pitch ball grid array (BQG) per JEDEC MO-205AC standard, with 1.0 mm ball pitch, 13.0 mm × 13.0 mm body size, and exposed thermal pad. The package supports industrial temperature operation and includes dedicated VDDQ/VSS pairs for I/O power integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Positive-edge-triggered master timing reference; all synchronous registers (address, control, I/O) sample on rising edge. |
| A0–A16 | Address inputs | 17-bit address bus for 128K-depth addressing; latched synchronously with CLK, ADV/LD low, and valid chip enables. |
| R/W | Read/Write control | Synchronous signal defining cycle type; determines whether loaded/staged data is read from or written to memory array two cycles later. |
| ADV/LD | Advance burst / Load address | Controls burst counter (HIGH) or loads new external address (LOW); critical for burst sequence management and address transition timing. |
| LBO | Linear/Interleaved Burst Order | Static input selecting burst pattern: LOW = linear, HIGH = interleaved; must remain stable during burst operation. |
| BW1–BW4 | Byte write enables | Four independent active-low signals enabling writes to 9-bit bytes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); supports partial-word updates without read-modify-write. |
| CE1, CE2, CE2 | Chip enables | Three synchronous enables (CE1/CE2 active-low, CE2 active-high) for multi-chip depth expansion; any false enable blocks new operations but completes pending transfers. |
| TMS, TDI, TCK, TDO, TRST | JTAG test interface | IEEE 1149.1 boundary-scan pins; TRST is optional asynchronous reset; all except TDO are inputs with internal pull-ups. |
| ZZ | Sleep mode | Active-high synchronous input gating internal clock and reducing dynamic power; data retention guaranteed during sleep. |
| OE | Output enable | Asynchronous, active-low control of I/O drivers; can be tied low for simplified read operation since outputs tri-state only when deselected or during write cycles. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates idle cycles between consecutive read/write operations by overlapping bus direction control with data transfer - increases effective bandwidth by up to 30% in burst-intensive traffic. |
| Pipelined Output Registers | Two-stage output pipeline (input register → mux → output register) ensures deterministic 3.5 ns clock-to-data timing and simplifies timing closure in high-speed synchronous designs. |
| 4-Word Burst Counter | On-chip counter generates four sequential addresses per load cycle; reduces address bus activity and controller overhead in streaming applications like packet buffering and frame assembly. |
| Individual Byte Write Control | Four BWx pins allow selective 9-bit byte writes without disturbing adjacent bytes - essential for protocol header manipulation and partial-word updates in networking ASIC interfaces. |
| Three Chip Enables | CE1 (active-low), CE2 (active-low), CE2 (active-high) provide flexible depth expansion control and hierarchical memory mapping in multi-SRAM systems. |
Applications
| Network Packet Buffer | Telecom Line Card |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency buffer memory interfacing directly with MAC/switch fabric controllers using burst reads/writes. Use Value: ZBT™ architecture enables back-to-back packet writes followed immediately by reads without bus turnaround penalty, sustaining >95% bus utilization at 133 MHz. | Use Scenario: Frame buffering in OC-48/STM-16 SONET/SDH line interface units requiring deterministic access and jitter-free data flow. IC Role / Device Role / Timing Role: Synchronous SRAM acting as elastic store between framer and DSP/FPGA, synchronized to system clock domain. Use Value: 3.5 ns clock-to-data access and pipelined outputs meet sub-10 ns setup/hold margins required for 2.5 Gbps serial line rates. |
| Industrial PLC Memory Module | Radar Signal Processing Buffer |
Use Scenario: Real-time I/O data logging and program execution memory in ruggedized programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Non-volatile-retentive working memory supporting deterministic scan-cycle execution under –40°C to +85°C conditions. Use Value: Industrial temperature rating and ZZ sleep mode reduce power during idle scan periods while guaranteeing data retention - extending thermal margin and system uptime. | Use Scenario: Intermediate storage for digitized RF samples in airborne radar front-ends where burst depth and low access latency are critical. IC Role / Device Role / Timing Role: High-bandwidth circular buffer feeding FFT engines, leveraging 4-word burst to match processing pipeline width. Use Value: Interleaved burst mode (LBO=HIGH) aligns with radar Doppler bin addressing patterns, minimizing address generation logic and improving FFT throughput. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-133BZI | 128K × 18-bit (2.25 Mbit), 133 MHz, 3.3V core/I/O, no JTAG, TQFP-100 only | Limited to x18 configuration; lacks ZBT™ zero-turnaround and burst counter; requires external logic for burst sequencing. | Select when x18 width suffices and JTAG/testability is not required; lower pin count eases layout but sacrifices bandwidth density. |
| AS7C3256A-133BIN | 256K × 16-bit (4 Mbit), 133 MHz, 3.3V, no ZBT™, no burst counter, no JTAG, TSOP-II-44 | Asynchronous interface; no pipelining or burst capability; incompatible timing model and control protocol. | Only suitable for legacy asynchronous SRAM upgrades where ZBT™ features are unused; not drop-in compatible due to fundamental interface differences. |
Compared with CY7C1356BV18-133BZI and AS7C3256A-133BIN, the 71V3556SA133BQG8 delivers higher effective bandwidth via ZBT™ and burst pipelining, supports industrial temperature and JTAG testability, and provides x36 data width - making it uniquely suited for high-performance telecom and embedded real-time buffers where deterministic latency and test coverage are mandatory.
Availability
71V3556SA133BQG8 is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, industrial PLC memory modules, and radar signal processing buffers requiring stable component supply across extended product lifecycles.
Supply support for 71V3556SA133BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications, computing, and industrial markets.
The 71V3556SA133BQG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-latency bus turnaround in high-speed packet-switching, telecom infrastructure, and real-time embedded systems demanding deterministic memory access.
FAQ
What is the memory organization and total capacity of the 71V3556SA133BQG8?
The 71V3556SA133BQG8 is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This x36 configuration supports wide data paths common in network processors and FPGA-based systems, enabling single-cycle transfers of 36-bit words at 133 MHz.
Does the 71V3556SA133BQG8 support JTAG boundary-scan testing?
Yes, the 71V3556SA133BQG8 includes full IEEE 1149.1-compliant JTAG support with TMS, TDI, TCK, TDO, and optional TRST pins. This enables in-system test, debug, and manufacturing verification - a key differentiator versus non-JTAG SRAMs like the AS7C3256A-133BIN.
How does the ZBT™ feature improve performance compared to standard synchronous SRAMs?
The ZBT™ (Zero Bus Turnaround) feature in the 71V3556SA133BQG8 eliminates idle cycles between read and write operations by internally coordinating bus direction control. Unlike standard SRAMs requiring explicit turnaround time, the 71V3556SA133BQG8 sustains back-to-back accesses - increasing effective bandwidth by up to 30% in mixed-traffic scenarios.
What burst modes does the 71V3556SA133BQG8 support, and how is burst order selected?
The 71V3556SA133BQG8 supports both linear and interleaved 4-word burst sequences. Burst order is selected statically via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW selects linear mode; LBO = HIGH selects interleaved mode. The burst counter advances automatically on each CLK edge when ADV/LD is HIGH.
Is the 71V3556SA133BQG8 rated for industrial temperature operation?
Yes, the 71V3556SA133BQG8 is qualified for industrial temperature range operation from –40°C to +85°C. This rating is confirmed in the Absolute Maximum Ratings and Recommended Operating Conditions tables, making it suitable for deployment in base stations, industrial controllers, and outdoor telecom equipment.
71V3556SA133BQG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3556SA133BQG8 FAQ
1.How can I place an order for 71V3556SA133BQG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA133BQG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA133BQG8 reliable?
The price and inventory of 71V3556SA133BQG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA133BQG8 is usually 5 days.
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4.How is shipping managed for 71V3556SA133BQG8?
71V3556SA133BQG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA133BQG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA133BQG8?
For technical support, including 71V3556SA133BQG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA133BQG8 requirements.
6.How does Aetrix verify that 71V3556SA133BQG8 is sourced from the original manufacturer or authorized distributors?
All 71V3556SA133BQG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA133BQG8 meets industry standards.
7.What is the process for return or replacement of 71V3556SA133BQG8?
All 71V3556SA133BQG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA133BQG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA133BQG8 part is unused and in its original packaging.
Return procedure for 71V3556SA133BQG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA133BQG8 Tags
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M24C02-WMN6TP
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