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Renesas 71V3556SA133BQI
- Part No.:
- 71V3556SA133BQI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3556SA133BQI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V3556SA133BQI from IDT (now Renesas) is a 128K × 36-bit, 4.5 Mbit, 3.3V synchronous ZBT™ SRAM with zero bus turnaround, pipelined outputs, and 4-word burst capability. It operates at 133 MHz (7.5 ns clock-to-data access), supports linear/interleaved burst modes via LBO, and features individual byte write enables (BW1–BW4) for precise data control in high-speed memory subsystems such as network packet buffers and cache controllers.
For engineers reviewing the 71V3556SA133BQI datasheet, 71V3556SA133BQI pinout, 71V3556SA133BQI application, or 71V3556SA133BQI equivalent, key selection criteria include its 100-pin TQFP package, industrial temperature range (–40°C to +85°C), JTAG-compliant boundary scan support, and synchronous 3.3V I/O with VDDQ decoupling - all critical for deterministic timing in telecom and embedded real-time systems.
Technical Context
The 71V3556SA133BQI implements a fully pipelined architecture with positive-edge-triggered address, data, and control registers synchronized to CLK. Its ZBT™ feature eliminates dead cycles between read/write transitions by overlapping bus turnaround with internal memory access, enabling continuous burst throughput without external OE control due to internally synchronized output buffer enable.
It integrates a 4-word burst counter driven by ADV/LD and LBO, supporting both linear and interleaved addressing sequences. The device uses three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion and includes optional IEEE 1149.1 JTAG test interface with TMS/TDI/TCK/TDO/TRST pins - available only in BGA variants, not in this TQFP version.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); enables 36-bit wide data paths for high-bandwidth applications like switch fabric buffers. |
| Max Clock Frequency | 133 MHz; guarantees 7.5 ns clock-to-data access time for predictable pipeline latency in synchronous systems. |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O supplies allow independent noise management and signal integrity optimization. |
| Burst Capability | 4-word burst (linear or interleaved); reduces address bus overhead and improves effective bandwidth in sequential access patterns. |
| Operating Temperature | –40°C to +85°C industrial grade; validated for deployment in base station equipment and industrial controllers without derating. |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard); compatible with standard surface-mount assembly and thermal profiling. |
| ZBT™ Feature | Zero Bus Turnaround; eliminates idle cycles between consecutive reads/writes, enabling back-to-back transactions without bus contention. |
Pinout & Package
71V3556SA133BQI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pin 1 is located at top-left corner (notch-mark side), and pin numbering proceeds counterclockwise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled. |
| CLK | System Clock Input | Primary timing reference; all synchronous operations (address, control, data) are edge-triggered on rising CLK. |
| R/W | Read/Write Control | Synchronous signal defining transaction type; determines whether next data cycle is read (H) or write (L). |
| ADV/LD | Burst Counter Control | Loads new external address (LOW) or increments internal burst counter (HIGH); defines burst sequence start and progression. |
| BW1–BW4 | Byte Write Enables | Four active-low signals controlling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); allows partial-word updates without masking logic. |
| CE1, CE2, CE2 | Chip Enable Inputs | Three independent enables (CE1/CE2 low-active, CE2 high-active); enable depth expansion and hierarchical memory decoding. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Pins | 36-bit bidirectional synchronous data bus; registered inputs/outputs ensure clean setup/hold margins relative to CLK. |
| LBO | Burst Order Select | Static input selecting linear (LOW) or interleaved (HIGH) burst sequence; must remain stable during burst operation. |
| OE | Output Enable | Asynchronous control; drives I/O pins to high-impedance when HIGH, allowing bus sharing without timing constraints. |
| CEN | Clock Enable | Synchronous suspend control; blocks CLK propagation when HIGH, freezing internal state and preserving data integrity during idle periods. |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3 V core supply; VDDQ = 3.3 V I/O supply; VSS = common ground; requires separate decoupling per supply domain. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Architecture | Eliminates bus turnaround dead cycles, enabling true back-to-back read/write bursts - critical for line-rate packet processing in switches/routers. |
| Pipelined Output Registers | Internally synchronizes output enable, removing need for external OE timing control and simplifying PCB layout and timing closure. |
| 4-Word Burst Counter | Reduces address bus activity by 75% during sequential accesses; supported by programmable LBO pin for linear/interleaved memory mapping. |
| Individual Byte Write Control | Enables precise 9-bit sub-word writes (BW1–BW4), avoiding full-word overwrite and reducing power consumption in partial-update scenarios. |
| Three Chip Enables | Supports seamless depth expansion across multiple devices without external logic, simplifying memory bank design in large-capacity systems. |
Applications
| Network Packet Buffer | High-Speed Cache Controller |
|---|---|
Use Scenario: Storing ingress/egress packets in Layer 2/3 Ethernet switches operating at 10 Gbps line rate. IC Role / Device Role / Timing Role: Primary data buffer providing zero-turnaround burst reads/writes to match switch fabric timing requirements. Use Value: 133 MHz clock speed and ZBT™ operation sustain >500 MB/s sustained bandwidth, eliminating packet loss under bursty traffic loads. | Use Scenario: Serving as L2 cache tag/data RAM in FPGA-based compute accelerators requiring deterministic memory latency. IC Role / Device Role / Timing Role: Synchronous pipelined SRAM interfacing directly to FPGA fabric with no wait states or glue logic. Use Value: 7.5 ns clock-to-data access and 100-pin TQFP footprint enable tight timing closure and compact board layout in space-constrained modules. |
| Telecom Baseband Processing | Industrial Real-Time Controller |
Use Scenario: Holding channelized data frames in 4G/LTE baseband units where burst-aligned memory access improves FFT/DFT efficiency. IC Role / Device Role / Timing Role: Burst-mode SRAM aligned with DSP DMA engines using ADV/LD and LBO for optimized frame buffering. Use Value: Linear/interleaved burst modes match natural memory access patterns of OFDM symbol processing, reducing CPU overhead by 30%. | Use Scenario: Providing deterministic scratchpad memory for motion control PLCs operating in harsh industrial environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM (–40°C to +85°C) serving as program/data RAM for real-time firmware execution. Use Value: Guaranteed data retention in sleep mode (ZZ pin) and robust 3.3V I/O tolerance ensure reliable operation during voltage transients and thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-133BZI | 256K × 18-bit organization; same 133 MHz speed, but narrower 18-bit bus and different pinout. | Requires PCB redesign for 18-bit data path; suitable when system bandwidth demand is lower and board space is constrained. | Select if 18-bit interface suffices and JTAG is not required; note CY7C1356BV18-133BZI lacks ZZ sleep mode pin. |
| AS7C33128PFS-133BIN | 128K × 32-bit organization; no ZBT™ feature, asynchronous OE, and no burst counter or ADV/LD logic. | Cannot support zero-turnaround or burst sequences; requires external control logic for pipelining and bus arbitration. | Choose only for cost-sensitive legacy designs where ZBT™ and burst functionality are unnecessary and timing margins are relaxed. |
Compared with CY7C1356BV18-133BZI and AS7C33128PFS-133BIN, the 71V3556SA133BQI delivers unique ZBT™-enabled back-to-back transaction capability and integrated burst control - essential for applications demanding maximum memory throughput without external sequencing logic.
Availability
71V3556SA133BQI is available at Aetrix Electronics and suitable for network packet buffering, telecom baseband processing, and industrial real-time control applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.
Supply support for 71V3556SA133BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V3556SA133BQI belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet-switching and real-time embedded systems where deterministic memory access is non-negotiable.
FAQ
What is the memory configuration and total capacity of the 71V3556SA133BQI?
The 71V3556SA133BQI is configured as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This organization supports 36-bit-wide data transfers, making it ideal for applications requiring high-bandwidth parallel memory interfaces such as network switch buffers and FPGA co-processing memory.
Does the 71V3556SA133BQI support JTAG boundary scan testing?
The 71V3556SA133BQI is the "SA" variant, which includes optional IEEE 1149.1 JTAG support (TMS, TDI, TCK, TDO, TRST). However, this functionality is only implemented in BGA packages (e.g., BG119, BQ165); the 100-pin TQFP package (BQI suffix) does not route JTAG pins - they are NC. Therefore, JTAG is not available on the 71V3556SA133BQI.
How does the ZBT™ feature improve system-level performance in the 71V3556SA133BQI?
The ZBT™ (Zero Bus Turnaround) feature in the 71V3556SA133BQI eliminates idle cycles between consecutive read and write operations. By overlapping bus direction control with internal memory access, it enables true back-to-back transactions - increasing effective bandwidth by up to 30% compared to conventional synchronous SRAMs in burst-intensive applications like packet forwarding engines.
What is the role of the ADV/LD and LBO pins in the 71V3556SA133BQI?
In the 71V3556SA133BQI, ADV/LD controls the burst counter: LOW loads a new external address, while HIGH advances the internal counter. LBO selects burst order - LOW enables linear sequence (0,1,2,3), HIGH enables interleaved (0,2,1,3). Both signals are synchronous and must remain stable during burst execution to prevent address misalignment.
Can the 71V3556SA133BQI operate in low-power mode, and how is it controlled?
Yes, the 71V3556SA133BQI supports sleep mode via the ZZ pin. When ZZ is driven HIGH, the internal clock is gated and the device enters its lowest power state while guaranteeing data retention. This mode is synchronous and requires CLK to be stable before assertion; it is distinct from standby modes requiring external clock gating or power cycling.
71V3556SA133BQI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3556SA133BQI FAQ
1.How can I place an order for 71V3556SA133BQI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA133BQI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA133BQI reliable?
The price and inventory of 71V3556SA133BQI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA133BQI is usually 5 days.
3.What payment methods are accepted for 71V3556SA133BQI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA133BQI transactions.
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4.How is shipping managed for 71V3556SA133BQI?
71V3556SA133BQI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA133BQI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA133BQI?
For technical support, including 71V3556SA133BQI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA133BQI requirements.
6.How does Aetrix verify that 71V3556SA133BQI is sourced from the original manufacturer or authorized distributors?
All 71V3556SA133BQI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA133BQI meets industry standards.
7.What is the process for return or replacement of 71V3556SA133BQI?
All 71V3556SA133BQI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA133BQI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA133BQI part is unused and in its original packaging.
Return procedure for 71V3556SA133BQI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA133BQI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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