Renesas 71V3556SA133BQI8
- Part No.:
- 71V3556SA133BQI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3556SA133BQI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V3556SA133BQI8 from IDT (now Renesas) is a 3.3V synchronous ZBT SRAM with 128K × 36-bit organization (4.5 Mbit), 133 MHz clock speed, 3.5 ns clock-to-data access, zero bus turnaround architecture, and JEDEC-standard 100-pin TQFP packaging. It enables high-throughput memory buffering in network packet processors and telecom line cards where write-read transition latency must be eliminated.
For engineers reviewing the 71V3556SA133BQI8 datasheet, 71V3556SA133BQI8 pinout, 71V3556SA133BQI8 application, or 71V3556SA133BQI8 equivalent, key selection criteria include ZBT timing compliance, 3.3V I/O voltage tolerance, industrial temperature range (–40°C to +85°C), burst counter support, and JTAG boundary-scan capability for system-level testability.
Technical Context
The 71V3556SA133BQI8 implements a fully pipelined synchronous interface with positive-edge-triggered address, data, and control registers. Its ZBT architecture eliminates dead cycles between read and write operations by overlapping bus turnaround with internal memory access.
It integrates an on-chip 4-word burst counter with linear/interleaved mode selectable via LBO, individual byte write enables (BW1–BW4), three chip enables (CE1, CE2, CE2) for depth expansion, and optional IEEE 1149.1-compliant JTAG for boundary scan - all operating at 3.3V core and I/O supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports high-bandwidth data path in 32-bit+ systems with parity |
| Max Clock Frequency | 133 MHz; enables 133 MT/s sustained throughput with pipelined operation |
| Clock-to-Data Access | 3.5 ns; defines minimum latency from CLK edge to valid output data under full-speed conditions |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; allows direct interfacing with 3.3V logic families without level shifters |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade embedded networking and base station equipment |
| Burst Capability | 4-word interleaved or linear burst; reduces address bus traffic and improves sequential access efficiency |
| JTAG Support | IEEE 1149.1 compliant; enables board-level structural test and in-system debug without external test fixtures |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit synchronous address bus; latched on rising CLK edge when ADV/LD low and chip enabled |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs and outputs referenced to its rising edge |
| R/W | Read/Write Control | Synchronous signal defining cycle type; data transfer occurs two clocks later |
| ADV/LD | Burst Counter Control | Loads new external address (low) or advances internal counter (high); enables burst sequencing |
| BW1–BW4 | Byte Write Enables | Four independent active-low enables for 9-bit byte writes; supports partial-word updates without read-modify-write |
| CE1, CE2, CE2 | Chip Enable Inputs | Three enables with mixed polarity (CE2 active-high); allow flexible depth expansion and bank selection |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous bus; registered input and output paths ensure timing closure in high-speed designs |
| LBO | Burst Order Select | Static input selecting linear (LBO = low) or interleaved (LBO = high) burst sequence per JEDEC standard |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | Boundary-scan signals supporting IEEE 1149.1; TRST is optional asynchronous reset (available in BGA only) |
| VDD, VDDQ, VSS | Power & Ground | Dual 3.3V supplies: VDD for core logic, VDDQ for I/O drivers; separate planes reduce noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Architecture | Eliminates bus turnaround dead cycles between reads and writes, enabling continuous 133 MT/s throughput |
| Pipelined Output Buffer | Internally synchronized OE elimination - outputs driven only on valid clock edges, removing external OE timing constraints |
| 4-Word Burst Counter | Reduces address bus activity by 75% during sequential accesses; LBO pin selects linear or interleaved order |
| Individual Byte Write | Four independent BWx pins enable precise 9-bit byte targeting without disturbing adjacent data |
| Three Chip Enables | Supports seamless depth expansion across multiple devices using CE1/CE2 (active-low) and CE2 (active-high) |
| Industrial Temperature Range | Guaranteed operation from –40°C to +85°C, validated for telecom infrastructure and industrial control environments |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in switching ASICs with strict latency budgets. IC Role / Device Role / Timing Role: High-speed dual-port buffer providing zero-turnaround write-read transitions to sustain line-rate traffic. Use Value: 3.5 ns clock-to-data access and ZBT architecture eliminate pipeline stalls, enabling deterministic sub-10 ns read-after-write latency. | Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line cards requiring burst-mode data handling. IC Role / Device Role / Timing Role: Synchronous SRAM serving as FIFO and descriptor table storage with JTAG test access for field-replaceable units. Use Value: 4-word burst capability and IEEE 1149.1 JTAG support reduce PCB trace count and simplify production test coverage. |
| Baseband Processor Cache | Industrial PLC Data Logging |
Use Scenario: Temporary storage of channelized TDMA bursts in wireless baseband processing subsystems. IC Role / Device Role / Timing Role: Low-latency memory buffer interfacing directly with FPGA-based channelizers and modulators. Use Value: 133 MHz operation and 3.3V I/O compatibility enable direct connection to Xilinx Virtex or Intel Stratix I/O banks. | Use Scenario: Real-time acquisition and timestamped storage of sensor data in programmable logic controllers with extended thermal range. IC Role / Device Role / Timing Role: Industrial-grade SRAM retaining data integrity across –40°C to +85°C ambient without refresh overhead. Use Value: Sleep mode (ZZ pin) reduces standby power to minimum while guaranteeing data retention during intermittent operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV133BZC | 128K × 32-bit (4 Mbit), no JTAG, 133 MHz, 3.3V, same TQFP-100 package | Lacks burst counter, byte write granularity, and boundary-scan; limited to simpler buffering tasks | Select when JTAG testability and fine-grained write control are not required and 4-bit narrower data bus is acceptable. |
| AS7C33128PFSI-133 | 128K × 32-bit (4 Mbit), no ZBT, 133 MHz, 3.3V, 100-pin TQFP | No zero bus turnaround; requires explicit OE control and suffers 1-cycle dead time between R/W transitions | Choose only if legacy design uses standard sync SRAM timing and ZBT performance is not critical to system throughput. |
Compared with CY7C1356BV133BZC and AS7C33128PFSI-133, the 71V3556SA133BQI8 delivers unique ZBT timing, integrated burst counter, and IEEE 1149.1 JTAG - making it the sole option for high-efficiency, testable, industrial-grade 36-bit synchronous buffering.
Availability
71V3556SA133BQI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processor cache, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3556SA133BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.
The 71V3556SA133BQI8 belongs to IDT's ZBT SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet-processing and telecom infrastructure applications.
FAQ
What is the memory configuration and total capacity of the 71V3556SA133BQI8?
The 71V3556SA133BQI8 is configured as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This organization supports 32-bit data paths plus 4-bit parity or ECC in mission-critical systems, and is distinct from the 256K × 18 variant offered in the same family.
Does the 71V3556SA133BQI8 support JTAG boundary-scan, and which pins are used?
Yes, the 71V3556SA133BQI8 supports IEEE 1149.1-compliant JTAG boundary-scan. Pins TMS, TDI, TCK, TDO, and optional TRST (pin 64 in TQFP, though TRST is BGA-only per documentation) implement the test interface. The "SA" suffix explicitly denotes JTAG-enabled versions.
How does the ZBT™ feature improve system performance compared to standard synchronous SRAMs?
The ZBT™ feature in the 71V3556SA133BQI8 eliminates dead cycles between read and write operations by overlapping bus direction changes with internal memory access. Unlike conventional SRAMs that require one idle cycle for bus turnaround, the 71V3556SA133BQI8 sustains continuous 133 MT/s throughput with deterministic timing.
What is the function of the ADV/LD and LBO pins on the 71V3556SA133BQI8?
ADV/LD controls the burst counter: low loads a new external address, high advances the internal counter. LBO selects burst order - low enables linear sequence (0,1,2,3), high enables interleaved (0,2,1,3). Both are synchronous inputs critical for burst-mode operation in packet buffering applications.
Is the 71V3556SA133BQI8 rated for industrial temperature operation, and what is its supply voltage tolerance?
Yes, the 71V3556SA133BQI8 is rated for industrial temperature operation from –40°C to +85°C. Its supply voltage tolerance is 3.3 V ±5% for both VDD (core) and VDDQ (I/O), ensuring robust interoperability with standard 3.3V logic families without external regulation beyond nominal spec.
71V3556SA133BQI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3556SA133BQI8 FAQ
1.How can I place an order for 71V3556SA133BQI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA133BQI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA133BQI8 reliable?
The price and inventory of 71V3556SA133BQI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA133BQI8 is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA133BQI8?
For technical support, including 71V3556SA133BQI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA133BQI8 requirements.
6.How does Aetrix verify that 71V3556SA133BQI8 is sourced from the original manufacturer or authorized distributors?
All 71V3556SA133BQI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA133BQI8 meets industry standards.
7.What is the process for return or replacement of 71V3556SA133BQI8?
All 71V3556SA133BQI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA133BQI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA133BQI8 part is unused and in its original packaging.
Return procedure for 71V3556SA133BQI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA133BQI8 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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