Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 71V3556SA133BQI8

Part No.:
71V3556SA133BQI8
Manufacturer:
Renesas
Category:
Memory
Package:
165-TBGA
Datasheet:
Aetrix71V3556SA133BQI8.pdf
Description:
IC SRAM 4.5MBIT PAR 165CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,792

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

71V3556SA133BQI8 from IDT (now Renesas) is a 3.3V synchronous ZBT SRAM with 128K × 36-bit organization (4.5 Mbit), 133 MHz clock speed, 3.5 ns clock-to-data access, zero bus turnaround architecture, and JEDEC-standard 100-pin TQFP packaging. It enables high-throughput memory buffering in network packet processors and telecom line cards where write-read transition latency must be eliminated.

For engineers reviewing the 71V3556SA133BQI8 datasheet, 71V3556SA133BQI8 pinout, 71V3556SA133BQI8 application, or 71V3556SA133BQI8 equivalent, key selection criteria include ZBT timing compliance, 3.3V I/O voltage tolerance, industrial temperature range (–40°C to +85°C), burst counter support, and JTAG boundary-scan capability for system-level testability.

Technical Context

The 71V3556SA133BQI8 implements a fully pipelined synchronous interface with positive-edge-triggered address, data, and control registers. Its ZBT architecture eliminates dead cycles between read and write operations by overlapping bus turnaround with internal memory access.

It integrates an on-chip 4-word burst counter with linear/interleaved mode selectable via LBO, individual byte write enables (BW1–BW4), three chip enables (CE1, CE2, CE2) for depth expansion, and optional IEEE 1149.1-compliant JTAG for boundary scan - all operating at 3.3V core and I/O supply.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization128K × 36-bit (4.5 Mbit); supports high-bandwidth data path in 32-bit+ systems with parity
Max Clock Frequency133 MHz; enables 133 MT/s sustained throughput with pipelined operation
Clock-to-Data Access3.5 ns; defines minimum latency from CLK edge to valid output data under full-speed conditions
Supply VoltageVDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; allows direct interfacing with 3.3V logic families without level shifters
Operating Temperature–40°C to +85°C; qualified for industrial-grade embedded networking and base station equipment
Burst Capability4-word interleaved or linear burst; reduces address bus traffic and improves sequential access efficiency
JTAG SupportIEEE 1149.1 compliant; enables board-level structural test and in-system debug without external test fixtures

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free and RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
A0–A16Address Inputs17-bit synchronous address bus; latched on rising CLK edge when ADV/LD low and chip enabled
CLKSystem Clock InputPrimary timing reference; all synchronous inputs and outputs referenced to its rising edge
R/WRead/Write ControlSynchronous signal defining cycle type; data transfer occurs two clocks later
ADV/LDBurst Counter ControlLoads new external address (low) or advances internal counter (high); enables burst sequencing
BW1–BW4Byte Write EnablesFour independent active-low enables for 9-bit byte writes; supports partial-word updates without read-modify-write
CE1, CE2, CE2Chip Enable InputsThree enables with mixed polarity (CE2 active-high); allow flexible depth expansion and bank selection
I/O0–I/O31, I/OP1–I/OP4Data I/O Bus36-bit bidirectional synchronous bus; registered input and output paths ensure timing closure in high-speed designs
LBOBurst Order SelectStatic input selecting linear (LBO = low) or interleaved (LBO = high) burst sequence per JEDEC standard
TMS, TDI, TCK, TDO, TRSTJTAG Test InterfaceBoundary-scan signals supporting IEEE 1149.1; TRST is optional asynchronous reset (available in BGA only)
VDD, VDDQ, VSSPower & GroundDual 3.3V supplies: VDD for core logic, VDDQ for I/O drivers; separate planes reduce noise coupling

Key Features

FeatureDesign Value
ZBT™ ArchitectureEliminates bus turnaround dead cycles between reads and writes, enabling continuous 133 MT/s throughput
Pipelined Output BufferInternally synchronized OE elimination - outputs driven only on valid clock edges, removing external OE timing constraints
4-Word Burst CounterReduces address bus activity by 75% during sequential accesses; LBO pin selects linear or interleaved order
Individual Byte WriteFour independent BWx pins enable precise 9-bit byte targeting without disturbing adjacent data
Three Chip EnablesSupports seamless depth expansion across multiple devices using CE1/CE2 (active-low) and CE2 (active-high)
Industrial Temperature RangeGuaranteed operation from –40°C to +85°C, validated for telecom infrastructure and industrial control environments

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in switching ASICs with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed dual-port buffer providing zero-turnaround write-read transitions to sustain line-rate traffic.

Use Value: 3.5 ns clock-to-data access and ZBT architecture eliminate pipeline stalls, enabling deterministic sub-10 ns read-after-write latency.

Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line cards requiring burst-mode data handling.

IC Role / Device Role / Timing Role: Synchronous SRAM serving as FIFO and descriptor table storage with JTAG test access for field-replaceable units.

Use Value: 4-word burst capability and IEEE 1149.1 JTAG support reduce PCB trace count and simplify production test coverage.

Baseband Processor CacheIndustrial PLC Data Logging

Use Scenario: Temporary storage of channelized TDMA bursts in wireless baseband processing subsystems.

IC Role / Device Role / Timing Role: Low-latency memory buffer interfacing directly with FPGA-based channelizers and modulators.

Use Value: 133 MHz operation and 3.3V I/O compatibility enable direct connection to Xilinx Virtex or Intel Stratix I/O banks.

Use Scenario: Real-time acquisition and timestamped storage of sensor data in programmable logic controllers with extended thermal range.

IC Role / Device Role / Timing Role: Industrial-grade SRAM retaining data integrity across –40°C to +85°C ambient without refresh overhead.

Use Value: Sleep mode (ZZ pin) reduces standby power to minimum while guaranteeing data retention during intermittent operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1356BV133BZC128K × 32-bit (4 Mbit), no JTAG, 133 MHz, 3.3V, same TQFP-100 packageLacks burst counter, byte write granularity, and boundary-scan; limited to simpler buffering tasksSelect when JTAG testability and fine-grained write control are not required and 4-bit narrower data bus is acceptable.
AS7C33128PFSI-133128K × 32-bit (4 Mbit), no ZBT, 133 MHz, 3.3V, 100-pin TQFPNo zero bus turnaround; requires explicit OE control and suffers 1-cycle dead time between R/W transitionsChoose only if legacy design uses standard sync SRAM timing and ZBT performance is not critical to system throughput.

Compared with CY7C1356BV133BZC and AS7C33128PFSI-133, the 71V3556SA133BQI8 delivers unique ZBT timing, integrated burst counter, and IEEE 1149.1 JTAG - making it the sole option for high-efficiency, testable, industrial-grade 36-bit synchronous buffering.

Availability

71V3556SA133BQI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processor cache, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3556SA133BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71V3556SA133BQI8 belongs to IDT's ZBT SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet-processing and telecom infrastructure applications.

FAQ

What is the memory configuration and total capacity of the 71V3556SA133BQI8?

The 71V3556SA133BQI8 is configured as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This organization supports 32-bit data paths plus 4-bit parity or ECC in mission-critical systems, and is distinct from the 256K × 18 variant offered in the same family.

Does the 71V3556SA133BQI8 support JTAG boundary-scan, and which pins are used?

Yes, the 71V3556SA133BQI8 supports IEEE 1149.1-compliant JTAG boundary-scan. Pins TMS, TDI, TCK, TDO, and optional TRST (pin 64 in TQFP, though TRST is BGA-only per documentation) implement the test interface. The "SA" suffix explicitly denotes JTAG-enabled versions.

How does the ZBT™ feature improve system performance compared to standard synchronous SRAMs?

The ZBT™ feature in the 71V3556SA133BQI8 eliminates dead cycles between read and write operations by overlapping bus direction changes with internal memory access. Unlike conventional SRAMs that require one idle cycle for bus turnaround, the 71V3556SA133BQI8 sustains continuous 133 MT/s throughput with deterministic timing.

What is the function of the ADV/LD and LBO pins on the 71V3556SA133BQI8?

ADV/LD controls the burst counter: low loads a new external address, high advances the internal counter. LBO selects burst order - low enables linear sequence (0,1,2,3), high enables interleaved (0,2,1,3). Both are synchronous inputs critical for burst-mode operation in packet buffering applications.

Is the 71V3556SA133BQI8 rated for industrial temperature operation, and what is its supply voltage tolerance?

Yes, the 71V3556SA133BQI8 is rated for industrial temperature operation from –40°C to +85°C. Its supply voltage tolerance is 3.3 V ±5% for both VDD (core) and VDDQ (I/O), ensuring robust interoperability with standard 3.3V logic families without external regulation beyond nominal spec.

71V3556SA133BQI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
165-TBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4.2 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-CABGA (13x15)

71V3556SA133BQI8 FAQ

1.How can I place an order for 71V3556SA133BQI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3556SA133BQI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3556SA133BQI8 reliable?

The price and inventory of 71V3556SA133BQI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA133BQI8 is usually 5 days.

3.What payment methods are accepted for 71V3556SA133BQI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA133BQI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3556SA133BQI8?

71V3556SA133BQI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3556SA133BQI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3556SA133BQI8?

For technical support, including 71V3556SA133BQI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA133BQI8 requirements.

6.How does Aetrix verify that 71V3556SA133BQI8 is sourced from the original manufacturer or authorized distributors?

All 71V3556SA133BQI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA133BQI8 meets industry standards.

7.What is the process for return or replacement of 71V3556SA133BQI8?

All 71V3556SA133BQI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA133BQI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3556SA133BQI8 part is unused and in its original packaging.

Return procedure for 71V3556SA133BQI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

71V3556SA133BQI8 Tags

  • 71V3556SA133BQI8
  • 71V3556SA133BQI8 PDF
  • 71V3556SA133BQI8 Datasheet
  • 71V3556SA133BQI8 Specifications
  • 71V3556SA133BQI8 Images
  • Renesas
  • Renesas 71V3556SA133BQI8
  • Buy 71V3556SA133BQI8
  • 71V3556SA133BQI8 Price
  • 71V3556SA133BQI8 Distributor
  • 71V3556SA133BQI8 Supplier
  • 71V3556SA133BQI8 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER