Renesas 71V3556SA150BGG

Overview

71V3556SA150BGG from IDT (now Renesas) is a 3.3V, 128K × 36-bit synchronous ZBT™ SRAM with zero bus turnaround, 150 MHz clock speed (6.67 ns cycle time), 3.5 ns clock-to-data access, pipelined outputs, and JTAG boundary scan (IEEE 1149.1). It serves as high-speed cache or buffer memory in network switches, telecom line cards, and FPGA co-processor interfaces requiring burst read/write without dead cycles.

For engineers reviewing the 71V3556SA150BGG datasheet, 71V3556SA150BGG pinout, 71V3556SA150BGG application, or 71V3556SA150BGG equivalent, key selection criteria include its ZBT™ architecture eliminating write-read turnaround latency, 4-word interleaved/linear burst capability, individual byte write control (BW1–BW4), triple chip enable for depth expansion, and industrial-grade operation from –40°C to +85°C.

Technical Context

The 71V3556SA150BGG implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its internal burst counter and ADV/LD logic support both linear and interleaved 4-word burst sequences selected by the LBO pin, while pipelined input/output registers decouple timing from system clock skew.

ZBT™ operation is enabled via synchronized OE elimination and zero-cycle bus turnaround between consecutive reads and writes - achieved through dedicated R/W control, three independent chip enables (CE1, CE2, CE2), and clock-enable (CEN) suspension without output disturbance. The device includes optional IEEE 1149.1 JTAG test interface with TMS/TDI/TCK/TDO/TRST pins.

Key Specifications

Pinout & Package

71V3556SA150BGG is packaged in a 119-ball fine-pitch BGA (BGG119), JEDEC-compliant, with 1.0 mm ball pitch and 14 mm × 20 mm footprint. Pinout validated per IDT document 5281 drw 13A (128K×36 BG119 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1356BV18-167BZI and AS7C33128PFSI-15, the 71V3556SA150BGG uniquely delivers ZBT™-enabled zero-cycle turnaround, integrated burst counter, and IEEE 1149.1 testability in a 119-ball BGA - making it optimal for high-performance, test-critical, space-constrained networking and telecom modules.

Availability

71V3556SA150BGG is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, telecom line card memory, industrial real-time controller buffering, and high-speed test equipment requiring stable component supply and long-term lifecycle support.

Supply support for 71V3556SA150BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V3556SA150BGG belongs to IDT's ZBT™ SRAM product line, designed specifically for high-bandwidth, low-latency memory subsystems in networking infrastructure, telecom equipment, and real-time embedded systems demanding deterministic access and zero bus turnaround.

FAQ

What is the maximum guaranteed clock frequency for the 71V3556SA150BGG?

The 71V3556SA150BGG is rated for 150 MHz operation (6.67 ns cycle time) across the full industrial temperature range (–40°C to +85°C). While the ZBT™ family supports up to 166 MHz in faster speed grades, this specific variant (150BGG) is characterized and guaranteed at 150 MHz with all parameters met under worst-case voltage and temperature conditions. The 71V3556SA150BGG datasheet specifies tCYC = 6.67 ns as the minimum clock period.

Does the 71V3556SA150BGG support true ZBT™ operation with no dead cycles between reads and writes?

Yes, the 71V3556SA150BGG implements true ZBT™ (Zero Bus Turnaround) functionality as defined by IDT. It eliminates dead cycles between consecutive read and write operations by using synchronized R/W control, pipelined registers, and internal bus arbitration - enabling back-to-back accesses at full clock rate. This behavior is confirmed in the functional truth table and timing diagrams of the 71V3556SA150BGG datasheet, where burst read immediately followed by burst write incurs zero wait states.

How is burst addressing controlled on the 71V3556SA150BGG?

Burst addressing on the 71V3556SA150BGG is controlled by the ADV/LD and LBO pins. When ADV/LD is sampled high at the rising clock edge, the internal burst counter advances; when sampled low, a new external address is loaded. LBO selects burst order: low for linear (0,1,2,3), high for interleaved (0,2,3,1). The 71V3556SA150BGG supports both modes with hardware-defined sequence tables and no software overhead.

Is JTAG boundary scan supported on the 71V3556SA150BGG, and which pins are used?

Yes, the 71V3556SA150BGG includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and TRST are assigned to balls A6, A5, A4, A3, and A2 respectively in the BGG119 package (per IDT doc 5281 drw 13A). TRST is optional and internally pulled up; if unused, it may be left floating. JTAG functionality is exclusive to the "SA" variant, and the 71V3556SA150BGG is explicitly an SA-series part.

What is the purpose of the ZZ (sleep mode) pin on the 71V3556SA150BGG?

The ZZ pin on the 71V3556SA150BGG is a synchronous sleep mode input. When driven high, it gates the internal clock and reduces core power consumption to its lowest level while maintaining full data retention. ZZ is sampled synchronously on the rising CLK edge and has an internal pulldown resistor. In sleep mode, the 71V3556SA150BGG draws <100 µA typical standby current, making it suitable for power-aware systems requiring rapid wake-up (<100 ns) without data loss.