Renesas 71V3556SA150BGG8
- Part No.:
- 71V3556SA150BGG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3556SA150BGG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,001
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3556SA150BGG8 from Renesas is a 128K × 36-bit, 4.5 Mbit, 3.3V synchronous ZBT™ SRAM with zero bus turnaround, 150 MHz clock speed (6.67 ns cycle time), pipelined outputs, and integrated burst counter. It supports interleaved/linear 4-word bursts, individual byte write control (BW1–BW4), and JTAG boundary scan (IEEE 1149.1). Used in high-speed networking line cards and packet buffer subsystems requiring deterministic latency and no dead cycles between read/write transitions.
For engineers reviewing the 71V3556SA150BGG8 datasheet, 71V3556SA150BGG8 pinout, 71V3556SA150BGG8 application, or 71V3556SA150BGG8 equivalent, key selection criteria include ZBT™ timing compliance, 100-pin TQFP or BGA package compatibility, industrial temperature support (–40°C to +85°C), 3.3V core/I/O supply tolerance, and JTAG-enabled testability for production validation.
Technical Context
The 71V3556SA150BGG8 implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates bus turnaround delay by enabling immediate read-after-write or write-after-read transitions without idle cycles.
It integrates an on-chip burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved 4-word sequences. Output enable (OE) is asynchronous, while all other inputs-including R/W, CEN, CE1/CE2/CE2, and BW1–BW4-are synchronized to CLK's rising edge.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); enables 36-bit wide data paths for high-throughput buffering in telecom ASIC interfaces. |
| Max Clock Frequency | 150 MHz (6.67 ns cycle time); guarantees sub-7 ns timing margin for 133–150 MHz system buses. |
| Access Time | 3.5 ns clock-to-data (tCD); ensures deterministic output valid timing for pipelined read operations. |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; compatible with standard 3.3V logic families without level translation. |
| Burst Capability | 4-word linear or interleaved burst; reduces address bus traffic and improves bandwidth efficiency in sequential access patterns. |
| JTAG Support | IEEE 1149.1 compliant boundary scan (TMS/TDI/TCK/TDO/TRST); enables in-system test and debug without physical probe access. |
| Operating Temperature | –40°C to +85°C industrial grade; validated for deployment in base station RF units and industrial control backplanes. |
Pinout & Package
71V3556SA150BGG8 is packaged in a 119-ball fine-pitch BGA (BGG119), JEDEC-compliant, 12 mm × 12 mm footprint with 0.8 mm ball pitch. Pinout includes dedicated I/O banks (I/O0–I/O31, I/OP1–I/OP4), three chip enables (CE1, CE2, CE2), and JTAG interface signals (TMS, TDI, TCK, TDO, TRST).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Positive-edge-triggered master timing reference; all synchronous registers latch on rising edge. |
| R/W | Read/Write control | Synchronous signal defining load-cycle operation type; determines whether next data cycle is read or write. |
| ADV/LD | Address advance/load | Controls burst counter increment (HIGH) or external address load (LOW); enables seamless burst chaining. |
| LBO | Linear/interleaved burst order | Static selection of burst sequence pattern; critical for cache-line alignment with CPU or DMA controllers. |
| BW1–BW4 | Byte write enables | Independent active-low controls for four 9-bit bytes; allows partial writes without read-modify-write overhead. |
| TMS/TDI/TCK/TDO/TRST | JTAG boundary scan interface | Enables IEEE 1149.1 test access port; TRST is optional asynchronous reset for TAP controller initialization. |
| VDD / VDDQ / VSS | Power and ground | Separate 3.3V core (VDD) and I/O (VDDQ) supplies reduce noise coupling; multiple VSS balls ensure low-inductance return paths. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive reads/writes-enables 100% bus utilization in burst-intensive applications like packet forwarding engines. |
| Pipelined Output Registers | Two-stage register pipeline (input + output) ensures predictable 2-cycle latency from address/control load to data valid, simplifying timing closure. |
| Internally Synchronized OE | Output enable is asynchronous but internally synchronized-prevents metastability while allowing flexible OE assertion timing across clock domains. |
| Three Independent Chip Enables | CE1 (active low), CE2 (active low), CE2 (active high) support depth expansion up to 8× without external logic or address decoding complexity. |
| Individual Byte Write Control | BW1–BW4 allow selective 9-bit byte updates-reduces power and avoids full-word overwrites in protocol header manipulation or descriptor table updates. |
Applications
| High-Speed Network Line Cards | Telecom Packet Buffering |
|---|---|
Use Scenario: Storing ingress/egress packet descriptors and payload fragments in OC-192/STM-64 line interface modules. IC Role / Device Role / Timing Role: Primary burst-access SRAM providing deterministic 3.5 ns tCD and zero-turnaround reads/writes for ASIC-based traffic managers. Use Value: Enables 150 MHz sustained throughput with no bus idle cycles-critical for maintaining 10 Gbps+ line-rate performance under worst-case burst loads. |
Use Scenario: Acting as shared buffer memory between multiple SerDes lanes and a traffic shaping scheduler in multi-service aggregation routers. IC Role / Device Role / Timing Role: Synchronous ZBT SRAM with JTAG testability used for real-time packet queuing with strict latency bounds. Use Value: 4-word burst mode reduces address bus toggling by 75% versus single-word access-lowers EMI and simplifies PCB routing for dense line card layouts. |
| Industrial PLC Backplanes | Test Equipment Data Capture |
Use Scenario: Buffering sensor fusion data streams from distributed I/O modules in deterministic motion control systems. IC Role / Device Role / Timing Role: Industrial-grade SRAM with –40°C to +85°C operation serving as dual-port-accessible scratchpad for real-time firmware. Use Value: Sleep mode (ZZ pin) reduces standby current to <100 µA-extends uptime in battery-backed or energy-harvested edge nodes. |
Use Scenario: Capturing high-speed digital waveform samples from parallel ADC arrays in automated test equipment (ATE) mainframes. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory interfacing directly to FPGA-based capture engines via 36-bit parallel bus. Use Value: Individual byte write enables (BW1–BW4) permit selective update of status flags and metadata without disturbing captured sample data-improves test repeatability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C1373KV18 | 256K × 18-bit organization, same 150 MHz speed, but no JTAG; uses different burst addressing scheme (no LBO pin). | Requires redesign of burst control logic and narrower data path; unsuitable where 36-bit width or IEEE 1149.1 test is mandatory. | Select only if 18-bit interface suffices and JTAG is not required for production test coverage. |
| ISSI IS61WV102436B | Same 128K × 36-bit config and ZBT architecture, but rated for 133 MHz max (7.5 ns cycle); no sleep mode (ZZ) or TRST pin. | Lacks industrial temp support and low-power sleep capability-unsuitable for thermally constrained or battery-assisted deployments. | Consider only for cost-sensitive commercial-temp designs where 133 MHz timing margin is acceptable and JTAG is non-critical. |
Compared with CY7C1373KV18 and IS61WV102436B, the 71V3556SA150BGG8 uniquely delivers 150 MHz performance at 36-bit width with full JTAG testability and industrial temperature support-making it the only option meeting combined high-speed, wide-bus, and production-test requirements.
Availability
71V3556SA150BGG8 is available at Aetrix Electronics and suitable for high-speed network line cards, telecom packet buffering systems, and industrial PLC backplanes requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for 71V3556SA150BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3556SA150BGG8 belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-performance communications equipment requiring zero bus turnaround, deterministic latency, and robust testability in harsh thermal environments.
FAQ
What is the maximum operating frequency supported by the 71V3556SA150BGG8?
The 71V3556SA150BGG8 is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock cycle time. This is validated across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The device achieves 3.5 ns clock-to-data access time (tCD), enabling tight timing margins in high-speed synchronous systems.
Does the 71V3556SA150BGG8 support JTAG boundary scan, and which pins are used?
Yes, the 71V3556SA150BGG8 supports IEEE 1149.1-compliant JTAG boundary scan. The required pins are TMS (Test Mode Select), TDI (Test Data Input), TCK (Test Clock), TDO (Test Data Output), and optional TRST (JTAG Reset). These signals are assigned to specific balls in the BGG119 package and are functional only in the "SA" variant, as confirmed in the pin configuration diagrams.
How does the ZBT™ feature eliminate dead cycles in the 71V3556SA150BGG8?
The ZBT™ (Zero Bus Turnaround) feature in the 71V3556SA150BGG8 removes idle cycles between successive read and write operations by overlapping bus control transitions. When a write completes, the next read begins immediately on the subsequent clock edge-no wait states or turnaround delays are inserted. This is achieved through internal synchronization of R/W, ADV/LD, and CE signals, ensuring deterministic 2-cycle latency regardless of access direction.
What burst modes does the 71V3556SA150BGG8 support, and how is burst order selected?
The 71V3556SA150BGG8 supports 4-word bursts in either linear or interleaved sequence, selected by the LBO (Linear Burst Order) pin. When LBO = LOW, linear addressing (A0, A1, A2, A3) is used; when LBO = HIGH, interleaved order (A0, A2, A1, A3) is applied. Burst initiation and advancement are controlled synchronously via ADV/LD, and the counter wraps automatically after the fourth word.
Is the 71V3556SA150BGG8 available in industrial temperature grade, and what is the specified range?
Yes, the 71V3556SA150BGG8 is qualified for industrial temperature operation from –40°C to +85°C. This rating is explicitly stated in the "Recommended Operating Temperature and Supply Voltage" table and verified across all DC and AC parameters, including access time, setup/hold timing, and JTAG functionality-ensuring reliability in base station, transportation, and factory automation environments.
71V3556SA150BGG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3556SA150BGG8 FAQ
1.How can I place an order for 71V3556SA150BGG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA150BGG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA150BGG8 reliable?
The price and inventory of 71V3556SA150BGG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA150BGG8 is usually 5 days.
3.What payment methods are accepted for 71V3556SA150BGG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA150BGG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3556SA150BGG8?
71V3556SA150BGG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA150BGG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA150BGG8?
For technical support, including 71V3556SA150BGG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA150BGG8 requirements.
6.How does Aetrix verify that 71V3556SA150BGG8 is sourced from the original manufacturer or authorized distributors?
All 71V3556SA150BGG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA150BGG8 meets industry standards.
7.What is the process for return or replacement of 71V3556SA150BGG8?
All 71V3556SA150BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA150BGG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA150BGG8 part is unused and in its original packaging.
Return procedure for 71V3556SA150BGG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA150BGG8 Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

