Renesas 71V3556SA150BGGI
- Part No.:
- 71V3556SA150BGGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3556SA150BGGI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V3556SA150BGGI from IDT (now Renesas) is a 128K × 36-bit, 4.5 Mbit, 3.3V synchronous ZBT™ SRAM with zero bus turnaround, 150 MHz operation (6.67 ns cycle time), pipelined outputs, and 4-word burst capability. It features synchronous address/control/data registers triggered on the positive clock edge, individual byte write enables (BW1–BW4), and JTAG boundary scan (IEEE 1149.1). It is used in high-bandwidth packet buffering and network switch fabric interfaces requiring deterministic latency and no dead cycles between read/write transitions.
For engineers reviewing the 71V3556SA150BGGI datasheet, 71V3556SA150BGGI pinout, 71V3556SA150BGGI application, or 71V3556SA150BGGI equivalent, key selection criteria include ZBT™ timing compliance, 100-pin TQFP or 119-ball BGA package compatibility, industrial temperature support (–40°C to +85°C), 3.3V core/I/O supply tolerance, and JTAG testability for production validation.
Technical Context
The 71V3556SA150BGGI implements a fully synchronous, pipelined architecture where address and control signals are registered on the rising CLK edge, and data access occurs two cycles later. Its ZBT™ feature eliminates bus turnaround dead cycles by enabling immediate read-after-write or write-after-read transitions without wait states.
It integrates an on-chip 4-word burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved burst sequences. The device includes three chip enables (CE1, CE2 active-low; CE2 active-high), asynchronous OE, and optional IEEE 1149.1 JTAG interface with TMS/TDI/TCK/TDO/TRST pins - available only in BGA packages per documentation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via pin-compatible variant |
| Clock Frequency | 150 MHz (6.67 ns cycle time); guarantees 3.5 ns clock-to-data access for timing-critical pipelines |
| Supply Voltage | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); enables direct interfacing with 3.3V logic families |
| Burst Capability | 4-word burst (linear or interleaved); reduces address bus traffic and improves throughput in sequential access patterns |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for embedded networking and telecom infrastructure |
| JTAG Support | IEEE 1149.1 compliant boundary scan; enables in-system test and debug without physical probe access |
| Package | 119-ball fine-pitch BGA (BGGI); 14 mm × 20 mm footprint compatible with high-density PCB layouts |
Pinout & Package
71V3556SA150BGGI is packaged in a 119-ball fine-pitch ball grid array (fBGA), designated BGGI per IDT ordering nomenclature. This JEDEC-standard package supports automated optical inspection and thermal dissipation suitable for industrial ambient conditions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Synchronous timing reference; all registers triggered on rising edge; defines pipeline stage boundaries |
| A0–A16 | Address inputs | 17-bit address bus for 128K depth; sampled synchronously with CLK, ADV/LD low, and valid chip enables |
| R/W | Read/Write control | Synchronous signal determining cycle type; asserted low for writes, high for reads; latched two cycles before data transfer |
| ADV/LD | Advance burst / Load address | Controls burst counter (high) or loads new external address (low); enables seamless burst chaining across memory regions |
| BW1–BW4 | Byte write enables | Four independent active-low enables for 9-bit bytes; allows partial-word writes without read-modify-write overhead |
| CE1, CE2, CE2 | Chip enable inputs | Three enables (CE1/CE2 active-low, CE2 active-high) support flexible depth expansion and hierarchical memory decoding |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O bus | 36-bit bidirectional synchronous data path; registered inputs/outputs eliminate hold-time violations in high-speed systems |
| LBO | Burst order select | Static input selecting linear (LBO = low) or interleaved (LBO = high) burst sequence; set once at power-up |
| TMS, TDI, TCK, TDO, TRST | JTAG test interface | IEEE 1149.1 boundary scan signals; TRST is optional asynchronous reset; all JTAG pins available only in BGA variants |
| VDD, VDDQ, VSS | Power and ground | Dual-supply design: VDD powers core logic, VDDQ powers I/O buffers; separate supplies reduce noise coupling and improve signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive read/write operations, enabling continuous 100% bus utilization in full-duplex memory controllers |
| Pipelined Output Buffer Enable | Internally synchronized OE removes need for external timing control; simplifies PCB layout and eliminates OE skew issues |
| 4-Word Burst Counter | Reduces address bus activity by 75% during sequential accesses; supports both linear and interleaved addressing for cache-line alignment |
| Individual Byte Write Control | Enables precise 9-bit byte-level writes without disturbing adjacent bytes; critical for protocol header manipulation and descriptor updates |
| Three Chip Enables | Allows stacking multiple devices for depth expansion while maintaining independent chip-select granularity for memory-mapped peripherals |
| JTAG Boundary Scan (IEEE 1149.1) | Provides structural test coverage for solder joint integrity and interconnect verification in high-reliability BGA assemblies |
Applications
| Network Packet Buffering | Telecom Switch Fabric |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-speed dual-port buffer providing zero-turnaround read/write for concurrent ingress/egress processing. Use Value: Eliminates bus idle cycles between frame header writes and payload reads, sustaining 1.2 Gbps line-rate throughput at 150 MHz. |
Use Scenario: Interfacing with ATM or SONET framer ICs in carrier-grade access equipment. IC Role / Device Role / Timing Role: Synchronous SRAM acting as cell-based buffer between framer and crosspoint switch controller. Use Value: 4-word burst mode aligns with 53-byte ATM cell structure, reducing address setup overhead by 3× versus discrete addressing. |
| Industrial PLC Memory Cache | Medical Imaging Data Pipeline |
|
Use Scenario: Caching real-time I/O status and control register values in programmable logic controllers. IC Role / Device Role / Timing Role: Deterministic-latency memory for cyclic executive tasks requiring sub-100 ns access predictability. Use Value: Industrial temperature rating (–40°C to +85°C) and 3.3V supply tolerance ensure reliable operation in uncontrolled cabinet environments. |
Use Scenario: Temporary storage of uncompressed DICOM image tiles during CT/MRI reconstruction. IC Role / Device Role / Timing Role: High-bandwidth buffer feeding FPGA-based pixel processors with burst-aligned 36-bit data streams. Use Value: Pipelined output registers and synchronous OE guarantee jitter-free data delivery to downstream logic, preventing frame tearing artifacts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-167AXC | 128K × 36-bit, 167 MHz, 3.3V QDR SRAM; no ZBT™, uses separate read/write clocks | Requires dual-clock domain management; lacks burst counter and ADV/LD control logic | Prefer when system already uses QDR interface and requires higher peak bandwidth over ZBT™ timing simplicity |
| AS7C33128PFSIG-15BIN | 128K × 36-bit, 150 MHz, 3.3V sync SRAM; no JTAG, no ZZ sleep mode, TQFP-only packaging | Missing boundary scan and low-power sleep; limited to commercial temp range (0°C to +70°C) | Choose for cost-sensitive industrial designs where JTAG testability and extended temperature are non-critical |
Compared with CY7C1362BV33-167AXC and AS7C33128PFSIG-15BIN, the 71V3556SA150BGGI uniquely delivers ZBT™ timing, integrated burst control, and IEEE 1149.1 testability in a qualified industrial BGA package - making it optimal for latency-sensitive, high-reliability networking and embedded control systems.
Availability
71V3556SA150BGGI is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric, industrial PLC memory cache, and medical imaging data pipeline applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for 71V3556SA150BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.
The 71V3556SA150BGGI belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-latency memory subsystems in packet-switched networks, baseband processing, and real-time embedded control.
FAQ
What is the maximum operating frequency of the 71V3556SA150BGGI?
The 71V3556SA150BGGI is rated for 150 MHz operation, corresponding to a 6.67 ns clock cycle time. This frequency is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions, with 3.5 ns clock-to-data access time enabling tight pipeline scheduling in high-speed memory controllers.
Does the 71V3556SA150BGGI support burst mode, and how is it configured?
Yes, the 71V3556SA150BGGI supports 4-word burst mode using its internal counter. Burst behavior is selected via the LBO pin (low = linear, high = interleaved) and controlled by ADV/LD: sampling ADV/LD high advances the counter, while sampling it low loads a new external address. This enables efficient sequential access without repeated address bus transactions.
Is JTAG boundary scan available on the 71V3556SA150BGGI, and which pins implement it?
Yes, the 71V3556SA150BGGI includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and TRST (optional reset) are assigned to dedicated balls in the 119-ball BGA package. TRST is not required, as automatic reset occurs at power-up and via TMS/TCK per standard.
How does the ZBT™ feature eliminate bus turnaround dead cycles in the 71V3556SA150BGGI?
The ZBT™ architecture in the 71V3556SA150BGGI allows immediate transition between read and write operations without inserting idle cycles. By decoupling address/control registration from data transfer timing (which occurs two clocks later), the bus remains active - enabling back-to-back read-after-write or write-after-read sequences essential for high-throughput packet processing.
What is the function of the ZZ (sleep mode) pin on the 71V3556SA150BGGI, and how is it used?
The ZZ pin on the 71V3556SA150BGGI enables synchronous sleep mode: asserting ZZ high gates the internal clock and reduces power consumption to its minimum while retaining memory contents. Data retention is guaranteed during sleep. ZZ has an internal pulldown resistor, so it defaults to inactive (low) unless actively driven high by the system controller.
71V3556SA150BGGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3556SA150BGGI FAQ
1.How can I place an order for 71V3556SA150BGGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA150BGGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA150BGGI reliable?
The price and inventory of 71V3556SA150BGGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA150BGGI is usually 5 days.
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Once your 71V3556SA150BGGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA150BGGI?
For technical support, including 71V3556SA150BGGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA150BGGI requirements.
6.How does Aetrix verify that 71V3556SA150BGGI is sourced from the original manufacturer or authorized distributors?
All 71V3556SA150BGGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA150BGGI meets industry standards.
7.What is the process for return or replacement of 71V3556SA150BGGI?
All 71V3556SA150BGGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA150BGGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA150BGGI part is unused and in its original packaging.
Return procedure for 71V3556SA150BGGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA150BGGI Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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