My Inquiry
My Account
Renesas 71V3556SA150BGGI8
- Part No.:
- 71V3556SA150BGGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3556SA150BGGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,192
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3556SA150BGGI8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 150 MHz clock frequency, 3.5 ns clock-to-data access time, and pipelined burst read/write capability. It eliminates bus turnaround dead cycles in high-speed memory subsystems for network packet buffers and telecom switching fabrics.
For engineers reviewing the 71V3556SA150BGGI8 datasheet, 71V3556SA150BGGI8 pinout, 71V3556SA150BGGI8 application, or 71V3556SA150BGGI8 equivalent, key selection criteria include ZBT™ zero-bus-turnaround timing, 4-word interleaved/linear burst mode, individual byte write control (BW1–BW4), JTAG IEEE 1149.1 support, and industrial temperature operation (–40°C to +85°C).
Technical Context
The 71V3556SA150BGGI8 implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV/LD = HIGH, supporting both linear and interleaved sequences selected by LBO.
ZBT™ operation is enabled via synchronized output buffer enable-eliminating external OE control-and three chip enables (CE1, CE2, CE2) for depth expansion. The device integrates a boundary-scan JTAG interface compliant with IEEE 1149.1, with optional TRST, and supports sleep mode (ZZ) for low-power retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); fixed configuration for this part number per datasheet Section 2 and Pin Configurations. |
| Max Clock Frequency | 150 MHz; guarantees full-speed operation in systems requiring ≤6.67 ns clock period. |
| Clock-to-Data Access | 3.5 ns; defines minimum latency from CLK rising edge to valid Q output during read cycles. |
| Burst Capability | 4-word burst (interleaved or linear); reduces address bus traffic and improves throughput in sequential access patterns. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies enable I/O voltage stability independent of core switching noise. |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade deployment in base stations and embedded controllers. |
| JTAG Support | IEEE 1149.1-compliant with TMS, TDI, TCK, TDO, and optional TRST; enables boundary-scan testing and debug in dense PCB layouts. |
Pinout & Package
Packaged in a 119-ball fine-pitch BGA (BGG119), JEDEC-standard footprint with 0.8 mm ball pitch. Pinout validated per datasheet Figures 7A/7B (BG119/BGG119) and Table 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled. |
| CLK | System Clock Input | Primary timing reference; all synchronous registers triggered on rising edge; no internal clock division. |
| R/W | Read/Write Control | Synchronous signal determining cycle type; sampled at load cycle (ADV/LD = LOW) to define burst direction. |
| ADV/LD | Burst Counter Control | Loads new external address when LOW; increments internal counter when HIGH-enabling continuous burst without address bus activity. |
| BW1–BW4 | Byte Write Enables | Four independent active-low signals controlling 9-bit byte writes; allows partial-word updates without masking logic. |
| CE1, CE2, CE2 | Chip Enables | Three-input decode (CE1=L, CE2=L, CE2=H) for flexible depth expansion; two-cycle deselect ensures clean bus release. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; registered input and output paths ensure timing closure in high-speed designs. |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | Full boundary-scan chain; TRST is optional asynchronous reset-internally pulled up if unused. |
| ZZ | Sleep Mode Input | Active-high synchronous entry into low-power retention mode; internal clock gating preserves data with minimal current draw. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read/write transitions-enabling back-to-back accesses at full clock rate without bus arbitration overhead. |
| Pipelined Output Enable | Internally synchronized OE replacement removes need for external timing control-simplifying PCB layout and reducing signal integrity risk. |
| 4-Word Burst with LBO Select | LBO pin configures burst order (linear/interleaved) at power-up; supports cache-line-aligned or DMA-friendly access patterns without firmware intervention. |
| Individual Byte Write Control | BW1–BW4 allow granular 9-bit writes-critical for protocol header updates and partial register modifications without full-word read-modify-write sequences. |
| Three Chip Enables | CE1/CE2/CE2 logic enables seamless depth expansion across multiple devices using standard address decoding-no glue logic required. |
Applications
| Packet Buffer Memory | Telecom Switch Fabric |
|---|---|
Use Scenario: Storing ingress/egress Ethernet or ATM cells in line cards with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level buffering between MAC and switch fabric ASICs. Use Value: 3.5 ns clock-to-data access and ZBT™ back-to-back reads/writes sustain ≥1.2 Gbps sustained throughput at 150 MHz. | Use Scenario: Supporting context-switching and table lookups in carrier-grade TDM and IP/MPLS switches. IC Role / Device Role / Timing Role: Synchronous burst-access memory for forwarding information base (FIB) and adjacency tables. Use Value: 4-word burst mode reduces address bus toggling by 75% versus single-word access-cutting dynamic power and EMI in dense switch modules. |
| Industrial PLC Data Logging | Medical Imaging Frame Buffer |
Use Scenario: Capturing sensor timestamps and process variables in real-time control loops with deterministic response. IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing non-interruptible data capture under voltage ripple and thermal stress. Use Value: –40°C to +85°C rating and 3.3V ±5% supply tolerance ensure reliable operation in unconditioned cabinet environments. | Use Scenario: Temporary storage of uncompressed DICOM frames during CT/MRI reconstruction pipelines. IC Role / Device Role / Timing Role: High-throughput, low-jitter memory staging raw pixel data between acquisition FPGA and GPU processing engines. Use Value: Pipelined outputs and registered I/O eliminate setup/hold violations at 150 MHz-enabling error-free transfers across 36-bit parallel buses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-167BZI | 256K × 18-bit (4.5 Mbit), 167 MHz, 3.3V, no JTAG, TQFP-100 only | Lacks ZBT™ and burst counter; requires external OE control and address sequencing logic | Select when JTAG testability is unnecessary and board space permits wider TQFP package. |
| AS7C33128P-15TIN | 128K × 32-bit (4 Mbit), 150 MHz, 3.3V, no ZBT™, no burst, no JTAG, TQFP-100 | Standard sync SRAM with no zero-turnaround or burst features; simpler interface but lower bandwidth efficiency | Choose for cost-sensitive designs where burst and ZBT™ are not required and 4-bit narrower bus is acceptable. |
Compared with CY7C1356BV18-167BZI and AS7C33128P-15TIN, the 71V3556SA150BGGI8 delivers unique ZBT™ timing and integrated burst control-reducing system-level logic, improving bandwidth utilization, and enabling IEEE 1149.1 test coverage in compact BGA layouts.
Availability
71V3556SA150BGGI8 is available at Aetrix Electronics and suitable for packet buffer memory, telecom switch fabric, and industrial PLC data logging requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for 71V3556SA150BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71V3556SA150BGGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in networking equipment, baseband processors, and real-time control systems demanding deterministic burst access and industrial reliability.
FAQ
What is the memory organization and total capacity of the 71V3556SA150BGGI8?
The 71V3556SA150BGGI8 is configured as 128K × 36-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. This organization is fixed for the "71V3556SA" variant per datasheet Section 2 and applies exclusively to the 71V3556SA150BGGI8 - it does not support 256K × 18-bit reconfiguration. Address pins A0–A16 provide full 17-bit addressing.
Does the 71V3556SA150BGGI8 support JTAG boundary-scan, and which pins are used?
Yes, the 71V3556SA150BGGI8 supports IEEE 1149.1-compliant JTAG boundary-scan. Pins TMS, TDI, TCK, TDO, and optional TRST are assigned per datasheet Figure 7A and Table 2. TRST is optional and internally pulled up; if unused, it may be left floating. JTAG functionality is confirmed for the "SA" suffix variant and is not present in non-SA versions.
How does the ZBT™ feature eliminate bus turnaround dead cycles in the 71V3556SA150BGGI8?
The 71V3556SA150BGGI8 achieves ZBT™ (Zero Bus Turnaround) by internally synchronizing output enable and eliminating external OE control. Combined with pipelined address/control registration and burst counter logic, it allows immediate transition from write to read (or vice versa) on consecutive clock cycles-no idle cycles required. This is verified in the Functional Block Diagram and Truth Table sections of the datasheet.
What burst modes does the 71V3556SA150BGGI8 support, and how is burst order selected?
The 71V3556SA150BGGI8 supports 4-word linear and interleaved burst sequences. Burst order is selected statically via the LBO pin: LBO = LOW selects linear order; LBO = HIGH selects interleaved order. The burst counter advances on ADV/LD = HIGH, and the sequence wraps after four words-confirmed in Tables 10 and 11 of the datasheet.
What is the function of the ZZ (Sleep Mode) pin on the 71V3556SA150BGGI8, and what happens to data during sleep?
The ZZ pin on the 71V3556SA150BGGI8 is an active-high synchronous input that gates the internal clock and places the device in low-power sleep mode. Data retention is guaranteed during sleep, as stated in the Pin Definition table (Section 4). ZZ has an internal pulldown resistor, and its behavior is validated for the BGG119 package per datasheet Note 4 in Figure 7A.
71V3556SA150BGGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3556SA150BGGI8 FAQ
1.How can I place an order for 71V3556SA150BGGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA150BGGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA150BGGI8 reliable?
The price and inventory of 71V3556SA150BGGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA150BGGI8 is usually 5 days.
3.What payment methods are accepted for 71V3556SA150BGGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA150BGGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3556SA150BGGI8?
71V3556SA150BGGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA150BGGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA150BGGI8?
For technical support, including 71V3556SA150BGGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA150BGGI8 requirements.
6.How does Aetrix verify that 71V3556SA150BGGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3556SA150BGGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA150BGGI8 meets industry standards.
7.What is the process for return or replacement of 71V3556SA150BGGI8?
All 71V3556SA150BGGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA150BGGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA150BGGI8 part is unused and in its original packaging.
Return procedure for 71V3556SA150BGGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA150BGGI8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
