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Renesas 71V3556SA150BQ8
- Part No.:
- 71V3556SA150BQ8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3556SA150BQ8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,369
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Product details
Overview
71V3556SA150BQ8 from IDT (now Renesas) is a 3.3V, 128K × 36-bit synchronous ZBT SRAM with Zero Bus Turnaround architecture, 150 MHz clock speed (6.67 ns cycle time), 3.5 ns clock-to-data access, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes, individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C) in a 165-ball fine-pitch BGA (BQ165) package - used in high-speed network packet buffers and telecom line cards.
For engineers reviewing the 71V3556SA150BQ8 datasheet, 71V3556SA150BQ8 pinout, 71V3556SA150BQ8 application, or 71V3556SA150BQ8 equivalent, key selection criteria include ZBT bus turnaround elimination, 3.3V I/O compatibility, JTAG IEEE 1149.1 support (SA version), burst counter functionality, and sleep mode (ZZ) for power-sensitive embedded systems.
Technical Context
The 71V3556SA150BQ8 implements a fully synchronous, rising-edge-triggered architecture with registered address, data, and control inputs. Its ZBT feature eliminates dead cycles between read/write transitions by overlapping bus turnaround with internal memory access timing.
It integrates an on-chip burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved 4-word sequences. The device includes three chip enables (CE1, CE2, CE2) for depth expansion, asynchronous OE for output control, and optional boundary-scan JTAG (TMS/TDI/TCK/TDO/TRST) compliant with IEEE 1149.1 - available only in BGA packages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via pin-compatible variant |
| Clock Frequency | 150 MHz (6.67 ns cycle time); defines maximum sustained burst throughput |
| Access Time | 3.5 ns clock-to-data (tCD); determines minimum latency for first word in read burst |
| Supply Voltage | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); requires separate low-noise regulation |
| Burst Capability | 4-word linear or interleaved burst; reduces address bus traffic and controller overhead |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for telecom infrastructure environments |
| JTAG Support | IEEE 1149.1 compliant (SA version); enables in-system test and debug without external probes |
| Sleep Mode | ZZ pin (active-high) gates internal clock and reduces power while retaining data |
Pinout & Package
Packaged in a 165-ball fine-pitch ball grid array (BQ165, 13 mm × 15 mm), RoHS-compliant, with 3.3V core and I/O supplies, and industrial temperature rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Rising-edge-triggered master timing reference; all synchronous registers align to this edge |
| R/W | Read/Write Control | Synchronous signal defining load-cycle operation type; determines data direction two cycles later |
| ADV/LD | Burst Counter Control | LOW loads new external address; HIGH advances internal burst counter for sequential access |
| LBO | Burst Order Select | Static input: LOW = linear sequence, HIGH = interleaved sequence (e.g., for cache line alignment) |
| BW1–BW4 | Byte Write Enables | Active-low per-byte controls for 36-bit word; enable selective 9-bit writes without masking logic |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 active-low, CE2 active-high) for multi-SRAM depth expansion |
| OE | Output Enable | Asynchronous control; drives I/Os to high-impedance when HIGH - no timing constraints required |
| ZZ | Sleep Mode Input | Active-high synchronous entry into low-power retention mode; preserves data with minimal current draw |
| TMS/TDI/TCK/TDO/TRST | JTAG Test Interface | IEEE 1149.1 boundary-scan signals; TRST optional asynchronous reset (BGA only) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Lines | 36-bit bidirectional synchronous bus; registered input and output paths reduce timing skew |
| VDD, VDDQ, VSS | Power/Ground | VDD (core), VDDQ (I/O), and VSS (ground) require separate decoupling; VDDQ must track VDD within ±5% |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Architecture | Eliminates bus turnaround dead cycles between consecutive reads and writes - enables continuous 100% bus utilization in burst-mode systems |
| Pipelined Outputs | Internally synchronized output buffer enable removes need for external OE timing control - simplifies PCB layout and timing closure |
| 4-Word Burst Counter | Reduces address bus activity by 75% per burst; LBO pin selects linear (sequential) or interleaved (cache-friendly) addressing order |
| Individual Byte Write | Four independent BWx signals allow precise 9-bit writes without full-word read-modify-write - critical for protocol header updates |
| Three Chip Enables | Supports seamless depth expansion across multiple 71V3556SA devices without external logic - lowers system BOM cost |
| JTAG Boundary Scan | IEEE 1149.1 compliance enables automated PCB test, interconnect verification, and in-system programming - reduces manufacturing test time |
Applications
| Packet Buffering in Switch ASICs | Telecom Line Card Memory |
|---|---|
Use Scenario: High-throughput Ethernet switch fabric requiring low-latency, deterministic memory access for frame queuing and scheduling. IC Role / Device Role / Timing Role: Primary packet buffer SRAM interfacing directly with switch fabric controller; provides zero-turnaround burst reads/writes at 150 MHz. Use Value: Eliminates bus idle cycles during read-to-write transitions - increases effective bandwidth by up to 25% versus standard sync SRAMs. | Use Scenario: SONET/SDH line interface card needing reliable, high-speed memory for ATM cell buffering and header processing. IC Role / Device Role / Timing Role: Dual-port-capable buffer supporting simultaneous ingress/egress traffic streams with strict jitter tolerance. Use Value: 3.5 ns tCD and pipelined outputs meet sub-10 ns timing budgets for OC-192 (10 Gbps) line rates. |
| Network Processor Offload Memory | Industrial Real-Time Controller Cache |
Use Scenario: Offloading packet classification and deep packet inspection tasks from main CPU using dedicated NPU subsystem. IC Role / Device Role / Timing Role: Local instruction/data SRAM tightly coupled to NPU microengine; accessed via burst-aligned AXI-like interface. Use Value: 4-word burst mode and byte-write enables accelerate rule-table updates and metadata manipulation without bus contention. | Use Scenario: Deterministic motion control system requiring guaranteed memory response within 10 µs for servo loop execution. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for real-time PLC firmware; retains state during ZZ sleep mode during idle periods. Use Value: Industrial temperature range (–40°C to +85°C) and sleep mode ensure reliability in uncooled cabinet environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-167BZI | 128K × 18-bit, 167 MHz, 3.3V, no ZBT, no JTAG, different pinout | Lower density, no burst counter or zero-turnaround; suited for simpler controllers without high-throughput burst needs | Select if system uses 18-bit data path and does not require ZBT or JTAG testability |
| AS7C33128PFS-15BIN | 128K × 36-bit, 150 MHz, 3.3V, no ZBT, no JTAG, TQFP package | Lacks ZBT architecture and JTAG; uses standard synchronous SRAM timing with bus turnaround penalty | Choose for cost-sensitive designs where board space allows TQFP and ZBT is non-critical |
Compared with CY7C1356BV18-167BZI and AS7C33128PFS-15BIN, the 71V3556SA150BQ8 delivers unique ZBT bus efficiency and IEEE 1149.1 testability in a compact fBGA - essential for high-density, high-reliability telecom and networking hardware where burst throughput and production test coverage are design priorities.
Availability
71V3556SA150BQ8 is available at Aetrix Electronics and suitable for packet buffering in switch ASICs, telecom line card memory, network processor offload memory, and industrial real-time controller cache requiring stable component supply across extended product lifecycles.
Supply support for 71V3556SA150BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.
The 71V3556SA150BQ8 belongs to IDT's ZBT SRAM product line, designed specifically for high-speed, low-latency data buffering in networking equipment, base stations, and real-time embedded systems demanding deterministic access and zero bus turnaround.
FAQ
What is the memory organization and density of the 71V3556SA150BQ8?
The 71V3556SA150BQ8 is a 128K × 36-bit synchronous SRAM, delivering 4,718,592 bits (4.5 Mbit) of total memory. It supports dual configuration modes: 128K × 36-bit and - via pin-compatible variants like 71V3558SA - 256K × 18-bit. This flexibility allows system designers to optimize data bus width and memory depth without changing PCB layout for the BQ165 package.
Does the 71V3556SA150BQ8 support JTAG boundary scan, and which pins are used?
Yes, the 71V3556SA150BQ8 (SA version) supports IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are assigned to dedicated balls in the BQ165 package. TRST is optional and internally pulled up; if unused, it may be left floating. JTAG functionality is not available in non-SA variants or TQFP packages.
How does the ZBT™ feature improve system performance in the 71V3556SA150BQ8?
The ZBT™ (Zero Bus Turnaround) feature in the 71V3556SA150BQ8 eliminates dead cycles between consecutive read and write operations by overlapping bus direction control with internal memory access. This enables back-to-back burst transfers without wait states - increasing effective bus utilization by up to 25% compared to standard synchronous SRAMs, especially critical in packet-forwarding and cache-coherent subsystems.
What is the role of the ADV/LD and LBO pins in burst operation of the 71V3556SA150BQ8?
In the 71V3556SA150BQ8, ADV/LD controls burst counter behavior: LOW loads a new external address, while HIGH advances the internal counter for sequential access. LBO selects burst order - LOW enables linear addressing (0,1,2,3), HIGH enables interleaved (0,2,1,3) - matching common cache line mapping schemes. Both signals are sampled synchronously on the rising CLK edge.
Can the 71V3556SA150BQ8 operate in low-power mode, and how is it activated?
Yes, the 71V3556SA150BQ8 supports low-power sleep mode via the synchronous ZZ pin. When ZZ is driven HIGH, the internal clock is gated and dynamic power drops significantly while data retention is guaranteed. This mode is ideal for intermittent traffic scenarios in telecom line cards or industrial controllers, reducing average power without sacrificing data integrity.
71V3556SA150BQ8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3556SA150BQ8 FAQ
1.How can I place an order for 71V3556SA150BQ8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA150BQ8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA150BQ8 reliable?
The price and inventory of 71V3556SA150BQ8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA150BQ8 is usually 5 days.
3.What payment methods are accepted for 71V3556SA150BQ8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA150BQ8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3556SA150BQ8?
71V3556SA150BQ8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA150BQ8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA150BQ8?
For technical support, including 71V3556SA150BQ8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA150BQ8 requirements.
6.How does Aetrix verify that 71V3556SA150BQ8 is sourced from the original manufacturer or authorized distributors?
All 71V3556SA150BQ8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA150BQ8 meets industry standards.
7.What is the process for return or replacement of 71V3556SA150BQ8?
All 71V3556SA150BQ8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA150BQ8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA150BQ8 part is unused and in its original packaging.
Return procedure for 71V3556SA150BQ8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA150BQ8 Tags
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M24C02-WMN6TP
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