Renesas 71V3556SA166BG
- Part No.:
- 71V3556SA166BG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3556SA166BG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,835
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Product details
Overview
71V3556SA166BG from IDT (now Renesas) is a 128K × 36-bit, 4.5-Mbit synchronous ZBT SRAM with Zero Bus Turnaround architecture, 166 MHz operation (3.5 ns clock-to-data access), 3.3 V core/I/O supply, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and individual byte write control for high-throughput memory subsystems in network packet buffers and telecom line cards.
For engineers reviewing the 71V3556SA166BG datasheet, 71V3556SA166BG pinout, 71V3556SA166BG application, or 71V3556SA166BG equivalent, key selection criteria include ZBT timing compliance, TQFP-100/BGA-119/fBGA-165 package options, JTAG IEEE 1149.1 support, industrial temperature range (–40°C to +85°C), and burst counter behavior under ADV/LD and LBO control.
Technical Context
The 71V3556SA166BG implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT feature eliminates dead cycles between read/write transitions via internal bus arbitration logic and dual-phase burst sequencing.
It integrates a 4-word burst counter with linear/interleaved mode selectable by LBO, pipelined input/output registers synchronized to CLK, and three chip enables (CE1, CE2, CE2) supporting depth expansion. The optional boundary-scan JTAG interface complies with IEEE 1149.1 and includes TMS, TDI, TCK, TDO, and TRST pins.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via pin-compatible variant |
| Max Clock Frequency | 166 MHz - enables 166 MT/s throughput with 3.5 ns clock-to-data access time |
| Supply Voltage | 3.3 V ±5% (VDD core and VDDQ I/O) - requires separate 3.3 V rails with decoupling |
| Burst Capability | 4-word linear or interleaved burst - reduces address bus traffic and improves bandwidth efficiency |
| Operating Temperature | –40°C to +85°C (industrial grade) - validated for embedded telecom and industrial control environments |
| JTAG Support | IEEE 1149.1 compliant with TMS/TDI/TCK/TDO/TRST - enables boundary-scan test and debug in-system |
| Package | 119-ball BGA (BG119) - 12 mm × 12 mm footprint with 0.8 mm pitch; RoHS-compliant green packaging |
Pinout & Package
71V3556SA166BG is packaged in a JEDEC-standard 119-ball grid array (BG119) with 0.8 mm pitch, 12 mm × 12 mm body size, and industrial-grade thermal performance. Pin functions are defined per the "SA" version with full JTAG support.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs and outputs referenced to rising edge |
| R/W | Read/Write Control | Synchronous signal determining cycle type; data transfer occurs two clocks later |
| ADV/LD | Burst Counter Control | LOW loads new external address; HIGH advances internal burst counter for sequential access |
| LBO | Burst Order Select | Static input: LOW = linear burst, HIGH = interleaved burst; must remain stable during operation |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 active-low, CE2 active-high); any false deselects device in two cycles |
| BW1–BW4 | Byte Write Enables | Four active-low signals controlling 9-bit byte writes (I/O[0:7]+P1 through I/O[24:31]+P4) |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | IEEE 1149.1 boundary-scan chain; TRST is optional asynchronous reset (internal pull-up) |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3 V core supply; VDDQ = 3.3 V I/O supply; VSS = common ground (multiple dedicated pins) |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Architecture | Eliminates bus turnaround dead cycles between read/write transitions, enabling continuous 166 MT/s throughput |
| Pipelined Outputs | Internally synchronized output buffer enable removes need for external OE timing control |
| Individual Byte Write | Four independent BWx signals allow selective 9-bit writes without disturbing other bytes in 36-bit word |
| On-chip Burst Counter | Generates 4-word burst sequences (linear or interleaved) from single address load, reducing address bus overhead |
| Three Chip Enables | Supports seamless depth expansion across multiple devices without external logic or glue |
Applications
| High-Speed Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with minimal latency. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as primary packet buffer with ZBT-enabled back-to-back read/write capability. Use Value: 166 MHz operation and zero-turnaround bus eliminate idle cycles, sustaining >95% bus utilization during burst-intensive traffic. | Use Scenario: Serving as frame buffer and control memory in OC-48/STM-16 SONET/SDH line interface cards. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 3.5 ns clock-to-data access for real-time header processing and payload buffering. Use Value: Industrial temperature rating (–40°C to +85°C) and 119-ball BGA ensure reliability in fanless, thermally constrained telecom chassis. |
| Network Processor Co-Processor Memory | Industrial PLC Data Logging |
Use Scenario: Offloading packet classification and statistics accumulation from network processors in DPI/firewall systems. IC Role / Device Role / Timing Role: Burst-capable SRAM interfacing directly to NPU's high-speed parallel bus with pipelined register staging. Use Value: 4-word burst mode and ADV/LD-controlled counter reduce NPU address generation overhead by 75% per burst sequence. | Use Scenario: Capturing timestamped sensor data at 10 kHz in programmable logic controllers for predictive maintenance. IC Role / Device Role / Timing Role: Reliable, low-power SRAM storing cyclic data records with guaranteed retention in sleep mode (ZZ pin active). Use Value: Synchronous CEN and ZZ sleep controls enable precise power gating while preserving data integrity across extended idle periods. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3556S166BG | No JTAG interface; lacks TMS/TDI/TCK/TDO/TRST pins; otherwise identical timing, pinout, and functionality | Not suitable for boundary-scan test environments requiring IEEE 1149.1 compliance | Select 71V3556S166BG only if JTAG is unnecessary and cost reduction is prioritized |
| CY7C1371DV166BGC | Cypress (Infineon) 128K × 36 QDR SRAM; 166 MHz, but uses differential clock and separate read/write data ports | Requires different PCB layout and controller interface logic; not drop-in compatible | Choose CY7C1371DV166BGC only when QDR architecture's simultaneous read/write is required over ZBT's sequential optimization |
Compared with 71V3556SA166BG, the 71V3556S166BG omits JTAG for lower cost in non-test-critical systems, while the CY7C1371DV166BGC provides true concurrent access at the expense of interface complexity and layout changes.
Availability
71V3556SA166BG is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply, long-term lifecycle support, and RoHS-compliant green packaging.
Supply support for 71V3556SA166BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, RF, and power management solutions for communications, computing, and industrial markets.
The 71V3556SA166BG belongs to IDT's ZBT SRAM product line, designed specifically for high-performance networking and telecom infrastructure where deterministic latency, burst efficiency, and bus turnaround elimination are critical.
FAQ
What is the maximum operating frequency of the 71V3556SA166BG?
The 71V3556SA166BG operates at up to 166 MHz, delivering 3.5 ns clock-to-data access time. This frequency is validated across the full industrial temperature range (–40°C to +85°C) and requires strict adherence to setup/hold timing margins relative to the rising CLK edge. The 166 MHz rating applies specifically to the 128K × 36 configuration in the BG119 package.
Does the 71V3556SA166BG support both linear and interleaved burst modes?
Yes, the 71V3556SA166BG supports both linear and interleaved 4-word burst sequences. The LBO (Linear Burst Order) pin selects the mode: LOW configures linear addressing (A0, A1, A2, A3), HIGH selects interleaved (A0, A1, A3, A2). This selection is static and must remain stable during burst operation to prevent address misalignment.
How does the ZBT™ feature eliminate dead cycles in the 71V3556SA166BG?
The ZBT™ feature in the 71V3556SA166BG eliminates dead cycles by using internal bus arbitration and pipelined control logic that allows immediate transition from write to read (or vice versa) without bus release/reacquisition delays. This is achieved through synchronized register staging and burst counter advancement, enabling back-to-back transactions at full 166 MHz throughput.
What is the function of the ZZ pin on the 71V3556SA166BG?
The ZZ pin on the 71V3556SA166BG is a synchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces power consumption to the lowest level while guaranteeing data retention. It features an internal pulldown resistor and must be asserted synchronously with CLK; data remains valid and accessible upon exit from sleep mode.
Is JTAG boundary-scan supported on the 71V3556SA166BG?
Yes, the 71V3556SA166BG includes full IEEE 1149.1-compliant JTAG boundary-scan support with dedicated TMS, TDI, TCK, TDO, and optional TRST pins. This capability is exclusive to the "SA" suffix variant and enables in-system test, debug, and programming verification without requiring external test fixtures.
71V3556SA166BG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3556SA166BG FAQ
1.How can I place an order for 71V3556SA166BG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA166BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA166BG reliable?
The price and inventory of 71V3556SA166BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA166BG is usually 5 days.
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Once your 71V3556SA166BG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA166BG?
For technical support, including 71V3556SA166BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA166BG requirements.
6.How does Aetrix verify that 71V3556SA166BG is sourced from the original manufacturer or authorized distributors?
All 71V3556SA166BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA166BG meets industry standards.
7.What is the process for return or replacement of 71V3556SA166BG?
All 71V3556SA166BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA166BG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA166BG part is unused and in its original packaging.
Return procedure for 71V3556SA166BG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA166BG Tags

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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24AA02UIDT-I/OT
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