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Renesas 71V3556SA166BGG8

Part No.:
71V3556SA166BGG8
Manufacturer:
Renesas
Category:
Memory
Package:
119-BGA
Datasheet:
Aetrix71V3556SA166BGG8.pdf
Description:
IC SRAM 4.5MBIT PAR 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,617

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Product details

Overview

71V3556SA166BGG8 from IDT (now Renesas) is a 3.3V, 128K × 36-bit synchronous ZBT™ SRAM with zero bus turnaround, 166 MHz operation, 3.5 ns clock-to-data access, pipelined outputs, and JTAG boundary scan (IEEE 1149.1). It serves as high-speed buffer/cache memory in network packet processors and telecom line cards requiring deterministic read/write interleaving without dead cycles.

For engineers reviewing the 71V3556SA166BGG8 datasheet, 71V3556SA166BGG8 pinout, 71V3556SA166BGG8 application, or 71V3556SA166BGG8 equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), three chip enables for depth expansion, sleep mode (ZZ), and industrial temperature range (–40°C to +85°C) compliance.

Technical Context

The 71V3556SA166BGG8 implements a fully synchronous, rising-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions via internal burst counter and ADV/LD-controlled address sequencing.

It integrates pipelined input/output registers, an on-chip 4-word burst counter selectable via LBO, asynchronous OE for output tri-state control, and optional IEEE 1149.1 JTAG test interface with TMS/TDI/TCK/TDO/TRST pins - all operating at 3.3V core (VDD) and I/O (VDDQ) supplies with ±5% tolerance.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via pin-compatible variant
Max Clock Frequency 166 MHz; enables 6.0 ns cycle time for high-throughput buffering in packet-switching ASICs
Clock-to-Data Access 3.5 ns; guarantees deterministic timing for two-cycle pipelined read operations
Supply Voltage VDD = VDDQ = 3.3 V ±5%; separate core/I/O rails reduce noise coupling in mixed-signal systems
Operating Temperature –40°C to +85°C (industrial grade); validated for base station and carrier-grade equipment
Burst Capability 4-word linear or interleaved burst; reduces address bus traffic and improves bandwidth efficiency
JTAG Support IEEE 1149.1 compliant with TMS/TDI/TCK/TDO/TRST; enables board-level testability and debug

Pinout & Package

Packaged in a 119-ball fine-pitch BGA (BGG119), JEDEC standard footprint (12 mm × 12 mm), RoHS-compliant, green-part qualified.

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address Inputs 17-bit synchronous address bus; latched on rising CLK edge with ADV/LD low and CEN low
CLK System Clock Input Rising-edge-triggered master timing reference; all synchronous signals referenced to this edge
R/W Read/Write Control Synchronous signal defining cycle type; data transfer occurs two clocks later
ADV/LD Burst Counter Control High = increment internal burst counter; low = load external address into register
LBO Burst Order Select Static input: low = linear burst sequence, high = interleaved burst sequence
BW1–BW4 Byte Write Enables Four independent active-low enables for 9-bit bytes; supports partial-word writes without masking
CE1, CE2, CE2 Chip Enables Three synchronous enables (CE1/CE2 low, CE2 high) for multi-device depth expansion
I/O0–I/O31, I/OP1–I/OP4 Data I/O Bus 36-bit bidirectional synchronous bus with registered input/output paths
OE Output Enable Asynchronous control: low = drive outputs, high = tri-state (no timing constraints)
ZZ Sleep Mode Input Active-high synchronous entry to low-power retention mode; data retained, clock gated internally
TMS, TDI, TCK, TDO, TRST JTAG Test Interface IEEE 1149.1 boundary scan support; TRST optional asynchronous reset (BGA only)

Key Features

Feature Design Value
ZBT™ Zero Bus Turnaround Eliminates dead cycles between read/write transitions, enabling continuous 166 MHz bus utilization in burst-mode applications
Internally Synchronized OE Removes need for precise OE timing control; outputs remain valid across clock cycles until OE is asserted high
4-Word Burst Counter Reduces external address generation overhead; supports both linear and interleaved sequences via LBO pin
Individual Byte Write (BW1–BW4) Enables selective 9-bit writes without full-word overwrite, critical for protocol header manipulation in networking stacks
Three Chip Enables (CE1/CE2/CE2) Allows seamless depth expansion across multiple devices without external logic or address decoding complexity
Industrial Temperature Range Validated operation from –40°C to +85°C ensures reliability in uncontrolled environments like outdoor telecom cabinets

Applications

Network Packet Buffering Telecom Line Card Cache

Use Scenario: High-speed buffering of variable-length Ethernet/IP packets in ingress/egress pipelines of multi-gigabit switches.

IC Role / Device Role / Timing Role: Primary ZBT SRAM acting as dual-port-like FIFO with zero-turnaround read/write arbitration.

Use Value: 3.5 ns clock-to-data and 166 MHz sustained throughput enable line-rate packet processing without stall cycles.

Use Scenario: Temporary storage of ATM cell headers and payload fragments in OC-192/STM-64 line interface units.

IC Role / Device Role / Timing Role: Burst-capable cache supporting interleaved access patterns required by SONET/SDH framing logic.

Use Value: 4-word interleaved burst mode reduces address bus toggling by 75%, lowering EMI and power consumption.

Baseband Processor Memory Radar Signal Processing Buffer

Use Scenario: Real-time buffering of IQ samples between ADC/DAC and DSP cores in 4G/5G massive MIMO radio units.

IC Role / Device Role / Timing Role: Low-latency, pipelined SRAM interfacing directly with FPGA-based channelizers and beamformers.

Use Value: Synchronous R/W and ADV/LD control allow deterministic sample alignment across parallel processing lanes.

Use Scenario: Storing intermediate FFT results and CFAR detection outputs in airborne pulse-Doppler radar front ends.

IC Role / Device Role / Timing Role: Industrial-grade SRAM providing data retention during thermal cycling and vibration stress.

Use Value: –40°C to +85°C rating and ZZ sleep mode ensure reliable operation in avionics environmental chambers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1371DV33-166AXC 128K × 36-bit, 166 MHz, but lacks JTAG and ZZ sleep mode; uses different burst control (BWS vs ADV/LD) No boundary scan test support; unsuitable for high-reliability production test environments requiring IEEE 1149.1 Select when JTAG is unnecessary and cost sensitivity outweighs testability requirements
AS7C33128P-166JCIN 128K × 36-bit, 166 MHz, no ZBT™ architecture; requires external OE timing control and has 5.5 ns access Introduces bus turnaround dead cycles; incompatible with zero-latency read/write interleaving protocols Select only for legacy designs where ZBT™ is not required and longer access time is acceptable

Compared with CY7C1371DV33-166AXC and AS7C33128P-166JCIN, the 71V3556SA166BGG8 uniquely delivers integrated JTAG testability, true zero-turnaround operation, and industrial-grade sleep mode - making it the sole choice for telecom infrastructure requiring production test coverage and deterministic real-time performance.

Availability

71V3556SA166BGG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, baseband processor memory, and radar signal processing applications requiring stable component supply across extended product lifecycles.

Supply support for 71V3556SA166BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71V3556SA166BGG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency, burst-oriented memory subsystems in carrier-class networking and wireless infrastructure equipment.

FAQ

What is the memory organization and speed grade of the 71V3556SA166BGG8?

The 71V3556SA166BGG8 is a 128K × 36-bit (4.5 Mbit), 166 MHz synchronous SRAM with 3.5 ns clock-to-data access time. It operates at 3.3V core and I/O supplies and supports both linear and interleaved 4-word burst modes. This configuration targets high-bandwidth, low-latency buffering in telecom and networking ASIC/FPGA interfaces.

Does the 71V3556SA166BGG8 support JTAG boundary scan, and which pins are used?

Yes, the 71V3556SA166BGG8 supports IEEE 1149.1 JTAG boundary scan. The dedicated pins are TMS (Test Mode Select), TDI (Test Data Input), TCK (Test Clock), TDO (Test Data Output), and optional TRST (JTAG Reset). These are assigned to specific BGA balls per the BG119 pinout and are functional only in the "SA" version (as indicated by the "SA" suffix in the part number).

How does the ZBT™ feature eliminate bus turnaround dead cycles in the 71V3556SA166BGG8?

The 71V3556SA166BGG8 achieves zero bus turnaround by decoupling address/control registration from data transfer timing. Address and control signals (R/W, ADV/LD, BWx) are latched on one clock edge, and associated read/write data appears exactly two clocks later - enabling immediate back-to-back reads and writes without idle cycles. This is enforced by the synchronous ADV/LD logic and internal burst counter.

What is the function of the ZZ pin on the 71V3556SA166BGG8, and how does it affect power consumption?

The ZZ pin on the 71V3556SA166BGG8 is a synchronous sleep mode input. When driven high, it gates the internal clock and places the device in its lowest power state while guaranteeing data retention. In this mode, dynamic power drops significantly, and the device remains responsive to wake-up events (e.g., CE assertion), making it ideal for power-constrained telecom modules.

Can the 71V3556SA166BGG8 operate in both 128K × 36 and 256K × 18 configurations, and how is this selected?

No - the 71V3556SA166BGG8 is fixed at 128K × 36 organization. The 256K × 18 variant is the pin-compatible 71V3558SA166BGG8. Configuration is determined by the base part number (71V3556S vs 71V3558S); no mode pins or straps exist to switch between them. Both share identical timing, packaging, and feature sets except for address/data width mapping.

71V3556SA166BGG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
119-BGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

71V3556SA166BGG8 FAQ

1.How can I place an order for 71V3556SA166BGG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3556SA166BGG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3556SA166BGG8 reliable?

The price and inventory of 71V3556SA166BGG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA166BGG8 is usually 5 days.

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71V3556SA166BGG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3556SA166BGG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3556SA166BGG8?

For technical support, including 71V3556SA166BGG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA166BGG8 requirements.

6.How does Aetrix verify that 71V3556SA166BGG8 is sourced from the original manufacturer or authorized distributors?

All 71V3556SA166BGG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA166BGG8 meets industry standards.

7.What is the process for return or replacement of 71V3556SA166BGG8?

All 71V3556SA166BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA166BGG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3556SA166BGG8 part is unused and in its original packaging.

Return procedure for 71V3556SA166BGG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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