Renesas 71V3556SA166BGGI8
- Part No.:
- 71V3556SA166BGGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3556SA166BGGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V3556SA166BGGI8 from IDT (now Renesas) is a 128K × 36-bit, 4.5 Mbit, 3.3V synchronous ZBT™ SRAM with zero bus turnaround, 166 MHz operation (3.5 ns clock-to-data access), pipelined outputs, and JTAG boundary scan support. It serves as high-speed cache or buffer memory in networking switches, telecom line cards, and packet processing engines requiring deterministic latency and burst data throughput.
For engineers reviewing the 71V3556SA166BGGI8 datasheet, 71V3556SA166BGGI8 pinout, 71V3556SA166BGGI8 application, or 71V3556SA166BGGI8 equivalent, key selection criteria include ZBT™ bus turnaround elimination, 4-word interleaved/linear burst capability, individual byte write control (BW1–BW4), industrial temperature range (–40°C to +85°C), and BGA-119 package compatibility with JEDEC-standard layout.
Technical Context
The 71V3556SA166BGGI8 implements a fully synchronous, pipelined architecture where address/control registration occurs on the rising edge of CLK, with data output valid two cycles later. Its ZBT™ feature eliminates dead cycles between read/write transitions by decoupling bus direction control from OE and using internal synchronization of output buffers.
It integrates a 4-word burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved addressing sequences. The device includes three chip enables (CE1, CE2, CE2) for depth expansion, optional IEEE 1149.1 JTAG boundary scan (TMS/TDI/TCK/TDO/TRST), and synchronous sleep mode (ZZ) for power reduction while retaining data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports high-bandwidth parallel data paths in 36-bit systems. |
| Max Clock Frequency | 166 MHz; enables 166 MT/s sustained throughput with deterministic 3.5 ns clock-to-data timing. |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; dual-rail I/O/core separation reduces noise coupling. |
| Burst Capability | 4-word burst (interleaved or linear); reduces address overhead and improves sequential access efficiency. |
| Operating Temperature | –40°C to +85°C industrial grade; qualified for deployment in carrier-grade infrastructure equipment. |
| Package | 119-ball BGA (BGG119); JEDEC-compliant footprint with 1.0 mm ball pitch for high-density PCB routing. |
| JTAG Support | IEEE 1149.1 compliant (TMS/TDI/TCK/TDO/TRST); enables board-level testability and debug without external probes. |
Pinout & Package
71V3556SA166BGGI8 is packaged in a 119-ball fine-pitch BGA (BGG119) per JEDEC MO-207AD, with 1.0 mm ball pitch, 14 mm × 14 mm body size, and industrial-grade thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Master clock input | Rising-edge-triggered synchronous reference for all registers; defines timing boundaries for pipelined operation. |
| A0–A16 | Address inputs | 17-bit address bus for 128K-depth addressing; registered on CLK rising edge with ADV/LD control. |
| R/W | Read/write control | Synchronous signal determining cycle type; sampled with ADV/LD low to initiate load operations. |
| ADV/LD | Burst advance / address load | Controls burst counter increment (HIGH) or external address latching (LOW); enables seamless burst sequencing. |
| BW1–BW4 | Byte write enables | Four independent active-low signals enabling selective 9-bit byte writes; supports partial-word updates without masking logic. |
| CE1, CE2, CE2 | Chip enable inputs | Three enables (CE1/CE2 active-low, CE2 active-high) allow flexible depth expansion and hierarchical memory decoding. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O bus | 36-bit bidirectional synchronous data path; registered inputs/outputs eliminate hold-time violations in high-speed designs. |
| LBO | Burst order select | Static input selecting linear (LOW) or interleaved (HIGH) burst sequence; configures memory access pattern at power-up. |
| TMS, TDI, TCK, TDO, TRST | JTAG boundary scan | Full IEEE 1149.1 interface for structural testing; TRST is optional asynchronous reset (pulled up internally). |
| ZZ | Sleep mode input | Active-high synchronous entry into low-power state; gates internal clock and reduces dynamic power while retaining data. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read/write transitions by synchronizing output enable internally-no external OE timing management required. |
| Pipelined Output Registers | Two-stage pipeline (address/control → data) ensures deterministic 3.5 ns clock-to-data access at 166 MHz, enabling predictable timing closure. |
| 4-Word Burst Counter | Reduces address bus traffic by 75% during sequential accesses; LBO pin selects linear or interleaved addressing for cache-line alignment. |
| Individual Byte Write Control | BW1–BW4 allow granular 9-bit writes without external byte-lane gating, simplifying system-level data coherency handling. |
| Industrial Temperature Range | –40°C to +85°C operation validated across voltage and frequency corners-suitable for uncontrolled ambient environments in telecom hardware. |
| JTAG Boundary Scan (IEEE 1149.1) | Enables automated PCB test coverage for solder joint integrity and interconnect verification-critical for high-reliability manufacturing. |
Applications
| Networking Switch Fabric | Telecom Line Card Buffer |
|---|---|
|
Use Scenario: High-speed packet buffering in Layer 2/3 switching ASICs requiring sub-10 ns latency and burst-aligned data flow. IC Role / Device Role / Timing Role: Primary ZBT SRAM acting as ingress/egress FIFO with zero-turnaround bus arbitration between MAC and switch fabric. Use Value: 166 MHz clock rate and pipelined outputs deliver 5.95 Gbps aggregate bandwidth (36 bits × 166 MHz), matching 10G Ethernet line rates. |
Use Scenario: Real-time jitter buffering in SONET/SDH framer modules where deterministic read/write turnaround is mandatory. IC Role / Device Role / Timing Role: Synchronous burst buffer interfacing with DSPs and SerDes PHYs via 36-bit parallel bus with ADV/LD-controlled address sequencing. Use Value: ZBT™ architecture guarantees no bus idle cycles during mixed read/write traffic-critical for maintaining constant bit-rate timing in TDM systems. |
| Packet Processing Engine Cache | Radar Signal Processing Memory |
|
Use Scenario: On-chip instruction/data cache extension for multi-core network processors executing deep packet inspection algorithms. IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM providing scratchpad memory with 4-word linear bursts aligned to 128-bit instruction fetches. Use Value: Individual BW1–BW4 enables atomic 9-bit metadata updates without corrupting adjacent payload bytes-essential for concurrent packet header modification. |
Use Scenario: High-reliability frame storage in airborne radar front-end modules operating in extended temperature environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM storing ADC-sampled chirp data with JTAG-testable interconnects for DO-254 compliance. Use Value: –40°C to +85°C qualification and ZZ sleep mode reduce power dissipation during standby intervals without compromising data retention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV18-166BZI | 256K × 18-bit organization; same 166 MHz speed, but narrower 18-bit bus and no JTAG support. | Best suited for cost-sensitive 18-bit datapath systems where burst depth >4 is not required. | Select when system bus width is 18-bit and boundary scan is unnecessary; verify ADV/LD timing compatibility. |
| AS7C33128PFSI-166BIN | 128K × 32-bit organization; lacks ZBT™ feature, JTAG, and individual byte write-uses standard synchronous SRAM protocol. | Applicable in legacy designs where zero-turnaround is not required and 32-bit alignment suffices. | Choose only if ZBT™ and burst counter functionality are not needed; requires external OE control and has higher bus turnaround latency. |
Compared with CY7C1362BV18-166BZI and AS7C33128PFSI-166BIN, the 71V3556SA166BGGI8 uniquely delivers 36-bit ZBT™ operation with integrated JTAG and per-byte write control-enabling higher bandwidth, lower latency, and enhanced testability in mission-critical infrastructure.
Availability
71V3556SA166BGGI8 is available at Aetrix Electronics and suitable for networking switch fabric, telecom line card buffer, packet processing engine cache, and radar signal processing memory applications requiring stable component supply, long-term lifecycle support, and industrial temperature reliability.
Supply support for 71V3556SA166BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.
The 71V3556SA166BGGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-throughput packet-forwarding and real-time signal processing systems.
FAQ
What is the memory configuration and total capacity of the 71V3556SA166BGGI8?
The 71V3556SA166BGGI8 is configured as 128K × 36-bit, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This organization supports 36-bit parallel data paths commonly used in high-end networking ASICs and DSP interfaces, and is distinct from the 256K × 18-bit variant offered in the same family.
Does the 71V3556SA166BGGI8 support JTAG boundary scan, and which pins are used?
Yes, the 71V3556SA166BGGI8 supports IEEE 1149.1 JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are dedicated to this function and are assigned to specific balls in the BGG119 package. TRST is pulled up internally and may be left floating if unused.
How does the ZBT™ feature of the 71V3556SA166BGGI8 eliminate bus turnaround delays?
The ZBT™ feature in the 71V3556SA166BGGI8 removes dead cycles between read and write operations by internally synchronizing the output buffer enable signal-eliminating the need for external OE control and allowing immediate bus direction reversal. This results in continuous data flow without wait states.
What are the burst addressing modes supported by the 71V3556SA166BGGI8, and how is selection controlled?
The 71V3556SA166BGGI8 supports both linear and interleaved 4-word burst sequences. The LBO (Linear Burst Order) pin determines mode: LOW selects linear, HIGH selects interleaved. This static configuration must be set before operation and remains fixed during burst execution.
What is the role of the ADV/LD pin in the 71V3556SA166BGGI8, and how does it interact with burst operations?
The ADV/LD pin controls whether the internal burst counter advances (HIGH) or loads a new external address (LOW). During burst reads/writes, sampling ADV/LD HIGH increments the counter automatically, enabling sequential access without reissuing addresses-reducing bus overhead and improving throughput efficiency.
71V3556SA166BGGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3556SA166BGGI8 FAQ
1.How can I place an order for 71V3556SA166BGGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA166BGGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that 71V3556SA166BGGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3556SA166BGGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA166BGGI8 meets industry standards.
7.What is the process for return or replacement of 71V3556SA166BGGI8?
All 71V3556SA166BGGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA166BGGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA166BGGI8 part is unused and in its original packaging.
Return procedure for 71V3556SA166BGGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA166BGGI8 Tags

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M24C02-WMN6TP
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