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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V3556SA166BQ

Name: 71V3556SA166BQ
Brand: Renesas
SKU: 71V3556SA166BQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V3556SA166BQ

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V3556SA166BQ.pdf

Description:: IC SRAM 4.5MBIT PAR 165CABGA

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Product details

Overview

71V3556SA166BQ from IDT (now Renesas) is a 128K × 36-bit, 4.5 Mbit, 3.3V synchronous ZBT™ SRAM with zero bus turnaround, pipelined outputs, and 166 MHz operation (3.5 ns clock-to-data access). It supports interleaved/linear 4-word burst reads/writes, individual byte write control (BW1–BW4), and JTAG boundary scan (IEEE 1149.1). Used in high-speed networking line cards and packet buffer applications requiring deterministic latency and no dead cycles between read/write transitions.

For engineers reviewing the 71V3556SA166BQ datasheet, 71V3556SA166BQ pinout, 71V3556SA166BQ application, or 71V3556SA166BQ equivalent, key selection criteria include ZBT™ bus turnaround elimination, 166 MHz synchronous timing, TQFP-100 or fBGA-165 package compatibility, industrial temperature support (–40°C to +85°C), and JTAG-enabled testability for high-reliability embedded systems.

Technical Context

The 71V3556SA166BQ implements a fully pipelined synchronous architecture with positive-edge-triggered address, data, and control registers. Its ZBT™ feature eliminates dead cycles by enabling immediate read-after-write or write-after-read transitions without bus idle time.

It integrates an on-chip burst counter, selectable linear/interleaved burst order via LBO, and asynchronous OE for output tri-state control. The device supports three chip enables (CE1, CE2, CE2) for depth expansion and includes optional IEEE 1149.1 JTAG boundary scan in SA variants - confirmed active on BQ165 fBGA package pins TMS/TDI/TCK/TDO/TRST.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36-bit (4.5 Mbit); fixed configuration for this part number - not field-configurable.
Clock Frequency	166 MHz maximum; enables 3.5 ns clock-to-data access time for deterministic pipeline timing.
Supply Voltage	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains reduce noise coupling.
Burst Capability	4-word burst (linear or interleaved); reduces address bus traffic and improves throughput in sequential access patterns.
Operating Temperature	–40°C to +85°C industrial grade; validated for sustained operation in telecom and industrial control environments.
JTAG Support	IEEE 1149.1 compliant; includes TMS, TDI, TCK, TDO, and optional TRST - available and functional in SA version.
Package	165-ball fine-pitch BGA (BQ165); 11 × 13 mm footprint with 0.8 mm pitch; supports high-density PCB layouts.

Pinout & Package

71V3556SA166BQ is packaged in a 165-ball fine-pitch BGA (BQ165), JEDEC-compliant, with 0.8 mm ball pitch and 11 × 13 mm body size. Pin functions are electrically validated per IDT datasheet revision Aug.06.21, with ZZ (sleep mode) supported on pin H11 and JTAG signals assigned to dedicated balls (TMS/TDI/TCK/TDO/TRST).

Pin/Terminal	Circuit Role	Design Meaning
CLK	Global synchronous clock input	Rising-edge-triggered; all registers (address, control, I/O) synchronized to this edge - defines system timing reference.
A0–A16	Address inputs	17-bit address bus for 128K × 36 configuration; sampled on rising CLK edge when ADV/LD = LOW and chip enabled.
I/O0–I/O31, I/OP1–I/OP4	36-bit bidirectional data bus	Registered I/O path; data valid two clocks after address/control load; supports byte-wise write masking via BW1–BW4.
CE1, CE2, CE2	Chip enable controls	Three independent enables (CE1/CE2 active-low, CE2 active-high); any false enable initiates 2-cycle deselect with automatic bus tri-state.
R/W	Read/write direction control	Synchronous signal determining cycle type; value latched at rising CLK edge with ADV/LD = LOW - defines load cycle as read or write.
ADV/LD	Burst counter control	Load new external address (LOW) or advance internal burst counter (HIGH); determines burst sequence progression and address source.
LBO	Burst order select	Static input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence - must remain stable during operation.
TMS, TDI, TCK, TDO, TRST	JTAG boundary scan interface	IEEE 1149.1 compliant test interface; TRST is optional asynchronous reset; all signals synchronous to TCK except TRST.
ZZ	Sleep mode input	Active-high synchronous entry into low-power sleep; gates internal CLK and guarantees data retention - implemented on pin H11 in BQ165.

Key Features

Feature	Design Value
ZBT™ Zero Bus Turnaround	Eliminates dead cycles between consecutive read/write operations - enables continuous 166 MHz bus utilization without turnaround overhead.
Pipelined Output Buffer	Internally synchronized OE eliminates need for external OE timing control; outputs driven only when valid data is ready.
4-Word Burst with Dual Sequence	Reduces address bus activity by 75% per burst; linear/interleaved modes match CPU cache line or DSP DMA requirements.
Individual Byte Write Control	BW1–BW4 allow selective 9-bit byte writes without read-modify-write - critical for partial updates in protocol header processing.
Three Chip Enables	Supports seamless depth expansion across multiple devices without external logic; enables hierarchical memory subsystem design.
JTAG Boundary Scan (SA version)	Enables IEEE 1149.1-compliant board-level test and debug; verified functional on BQ165 package with full TAP controller implementation.

Applications

High-Speed Packet Buffering	Telecom Line Card Memory
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in network switches/routers before classification or forwarding. IC Role / Device Role / Timing Role: Primary packet buffer SRAM interfacing directly to MAC or framer ASICs with strict 166 MHz timing and zero-turnaround bus protocol. Use Value: Eliminates bus idle time between frame write and status read, increasing effective throughput by up to 12% vs. conventional SSRAMs.	Use Scenario: Buffering real-time voice/video streams in carrier-grade DSLAMs or OLTs where jitter-sensitive timing is enforced. IC Role / Device Role / Timing Role: Synchronous memory subsystem supporting burst-mode DMA transfers from DSP or media processor with deterministic 3.5 ns access. Use Value: Pipelined outputs and burst counter ensure consistent 4-word delivery aligned to system clock - critical for jitter-constrained PHY interfaces.
Industrial PLC Data Logging	Test Equipment Pattern Memory
Use Scenario: Capturing sensor data sequences at microsecond intervals in programmable logic controllers for post-analysis. IC Role / Device Role / Timing Role: High-reliability SRAM operating at –40°C to +85°C, storing timestamped analog/digital samples with burst write efficiency. Use Value: Individual byte write enables efficient storage of mixed-format sensor records (e.g., 16-bit ADC + 8-bit status) without overwriting adjacent fields.	Use Scenario: Holding stimulus/response patterns in automated test equipment (ATE) for semiconductor wafer probing. IC Role / Device Role / Timing Role: Deterministic-access memory used in pattern generator subsystems requiring precise 166 MHz waveform timing and JTAG-verifiable integrity. Use Value: Integrated JTAG boundary scan allows in-system verification of interconnect integrity prior to pattern execution - reducing test setup errors.

High-Speed Packet Buffering

Telecom Line Card Memory

Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in network switches/routers before classification or forwarding.

IC Role / Device Role / Timing Role: Primary packet buffer SRAM interfacing directly to MAC or framer ASICs with strict 166 MHz timing and zero-turnaround bus protocol.

Use Value: Eliminates bus idle time between frame write and status read, increasing effective throughput by up to 12% vs. conventional SSRAMs.

Use Scenario: Buffering real-time voice/video streams in carrier-grade DSLAMs or OLTs where jitter-sensitive timing is enforced.

IC Role / Device Role / Timing Role: Synchronous memory subsystem supporting burst-mode DMA transfers from DSP or media processor with deterministic 3.5 ns access.

Use Value: Pipelined outputs and burst counter ensure consistent 4-word delivery aligned to system clock - critical for jitter-constrained PHY interfaces.

Industrial PLC Data Logging

Test Equipment Pattern Memory

Use Scenario: Capturing sensor data sequences at microsecond intervals in programmable logic controllers for post-analysis.

IC Role / Device Role / Timing Role: High-reliability SRAM operating at –40°C to +85°C, storing timestamped analog/digital samples with burst write efficiency.

Use Value: Individual byte write enables efficient storage of mixed-format sensor records (e.g., 16-bit ADC + 8-bit status) without overwriting adjacent fields.

Use Scenario: Holding stimulus/response patterns in automated test equipment (ATE) for semiconductor wafer probing.

IC Role / Device Role / Timing Role: Deterministic-access memory used in pattern generator subsystems requiring precise 166 MHz waveform timing and JTAG-verifiable integrity.

Use Value: Integrated JTAG boundary scan allows in-system verification of interconnect integrity prior to pattern execution - reducing test setup errors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
71V3556SA133BQ	Slower 133 MHz max clock (4.5 ns access); identical pinout, voltage, and feature set including JTAG and ZBT™.	Suitable for cost-sensitive designs where 166 MHz bandwidth is not required - e.g., legacy backplane interfaces.	Select when system clock budget allows margin; same PCB layout and firmware integration.
71V3556SA166PQG	Same speed and functionality but in 100-pin TQFP (PKG100); lacks JTAG (no TMS/TDI/TCK/TDO/TRST pins) and ZZ sleep mode.	Preferred for space-constrained boards needing simpler packaging and no boundary scan - e.g., compact edge routers.	Choose for lower-cost assembly and absence of test infrastructure; verify thermal dissipation in TQFP vs. BGA.

Compared with 71V3556SA133BQ, the 71V3556SA166BQ delivers 25% higher bandwidth for latency-critical packet buffering; versus 71V3556SA166PQG, it adds JTAG testability and sleep mode - essential for high-availability telecom systems requiring field diagnostics and power management.

Availability

71V3556SA166BQ is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, industrial PLC data logging, and ATE pattern memory applications requiring stable component supply, long-term lifecycle assurance, and industrial temperature compliance.

Supply support for 71V3556SA166BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a leader in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V3556SA166BQ belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-turnaround, burst-capable memory subsystems in networking infrastructure and real-time embedded systems demanding deterministic latency and high reliability.

FAQ

What is the memory organization of the 71V3556SA166BQ?

The 71V3556SA166BQ is a fixed 128K × 36-bit synchronous SRAM, totaling 4.5 Mbit. It does not support reconfiguration to 256K × 18 - that variant is the distinct 71V3558SA166BQ. Address pins A0–A16 are fully utilized, and the device operates exclusively in 36-bit data width mode.

Does the 71V3556SA166BQ support JTAG boundary scan?

Yes, the 71V3556SA166BQ (SA suffix) includes full IEEE 1149.1 JTAG boundary scan capability. Pins TMS, TDI, TCK, TDO, and optional TRST are assigned and functional in the BQ165 package per datasheet revision Aug.06.21 - confirmed in both functional block diagrams and pin configuration tables.

What is the role of the ZZ pin on the 71V3556SA166BQ?

The ZZ pin on the 71V3556SA166BQ is a synchronous sleep mode input. When driven HIGH, it internally gates the clock and reduces power consumption to the lowest level while guaranteeing data retention. In the BQ165 package, ZZ is implemented on pin H11 and has an internal pulldown resistor.

How does the ZBT™ feature improve system performance in the 71V3556SA166BQ?

The ZBT™ (Zero Bus Turnaround) feature in the 71V3556SA166BQ eliminates mandatory idle cycles between read and write operations. This allows consecutive read-after-write or write-after-read transactions at full 166 MHz clock rate - increasing effective bus utilization by up to 12% compared to standard SSRAMs with turnaround penalties.

Can the 71V3556SA166BQ operate in industrial temperature range?

Yes, the 71V3556SA166BQ is rated for industrial temperature operation from –40°C to +85°C. This is explicitly specified in the "Recommended Operating Temperature and Supply Voltage" table (Table 05) and confirmed in absolute maximum ratings (Table 06) - making it suitable for harsh-environment applications like base station radios and factory automation controllers.

71V3556SA166BQ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V3556SA166BQ FAQ

1.How can I place an order for 71V3556SA166BQ through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3556SA166BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3556SA166BQ reliable?

The price and inventory of 71V3556SA166BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA166BQ is usually 5 days.

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71V3556SA166BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3556SA166BQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3556SA166BQ?

For technical support, including 71V3556SA166BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA166BQ requirements.

6.How does Aetrix verify that 71V3556SA166BQ is sourced from the original manufacturer or authorized distributors?

All 71V3556SA166BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA166BQ meets industry standards.

7.What is the process for return or replacement of 71V3556SA166BQ?

All 71V3556SA166BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA166BQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3556SA166BQ part is unused and in its original packaging.

Return procedure for 71V3556SA166BQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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