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Renesas 71V3556SA166BQG8
- Part No.:
- 71V3556SA166BQG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3556SA166BQG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,067
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Product details
Overview
71V3556SA166BQG8 from Renesas is a 3.3V synchronous ZBT SRAM with 128K × 36-bit organization (4.5 Mbit), 166 MHz clock frequency, 3.5 ns clock-to-data access time, zero bus turnaround architecture, and pipelined outputs. It serves as high-speed buffer memory in network packet processors and telecom line cards where burst reads/writes with no dead cycles are critical.
For engineers reviewing the 71V3556SA166BQG8 datasheet, 71V3556SA166BQG8 pinout, 71V3556SA166BQG8 application, or 71V3556SA166BQG8 equivalent, key selection criteria include ZBT™ timing compliance, 4-word burst capability (linear/interleaved), individual byte write control (BW1–BW4), JTAG IEEE 1149.1 support, and industrial temperature operation (–40°C to +85°C).
Technical Context
The 71V3556SA166BQG8 implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its internal burst counter and ADV/LD-controlled address loading enable deterministic 4-cycle burst sequences without external sequencing logic.
ZBT™ operation eliminates bus turnaround latency by allowing immediate read-after-write or write-after-read transitions - achieved via internally synchronized output buffer enable and dual-phase pipeline staging (address/control latched on cycle n, data transfer occurs on cycle n+2). The device supports both linear and interleaved burst orders via static LBO pin configuration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit) - supports 36-bit wide data paths for high-throughput buffering in switch fabric interfaces. |
| Clock Frequency | 166 MHz - enables 6.02 ns clock period; defines maximum sustained burst throughput of 664 MB/s (36-bit × 166 MHz). |
| Clock-to-Data Access | 3.5 ns - guaranteed minimum delay from CLK rising edge to valid Q output; critical for meeting setup/hold timing in tightly coupled pipelines. |
| Burst Capability | 4-word burst (linear or interleaved) - reduces address bus overhead by 75% per burst; LBO pin selects sequence order statically. |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5% - separate core/I/O rails allow independent noise management and signal integrity optimization. |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade deployment in base station equipment and ruggedized networking hardware. |
| JTAG Support | IEEE 1149.1 compliant (TMS/TDI/TCK/TDO/TRST) - enables boundary-scan testing and in-system debug without additional test fixtures. |
Pinout & Package
Packaged in a 165-ball fine-pitch BGA (BQG165), JEDEC-compliant, 12 mm × 12 mm footprint with 0.65 mm ball pitch. Pinout validated per Renesas document 5281 tbl 25 (128K×36 BQ165 configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Positive-edge-triggered master timing reference; all synchronous registers (address, control, I/O) sample on rising edge. |
| A0–A16 | Address inputs | 17-bit address bus for 128K-depth addressing; latched synchronously with CLK, ADV/LD low, and chip enable asserted. |
| R/W | Read/write control | Synchronous signal defining cycle type; sampled with ADV/LD low to initiate load read/write; ignored during burst advance (ADV/LD high). |
| ADV/LD | Advance burst / Load address | Controls burst counter (high) or loads new external address (low); determines whether next cycle uses internal or external address. |
| BW1–BW4 | Byte write enables | Four active-low signals enabling independent 9-bit byte writes; allows partial-word updates without read-modify-write overhead. |
| CE1, CE2, CE2 | Chip enables | Three-input enable logic: CE1=LOW, CE2=LOW, CE2=HIGH required for selection; two-cycle deselect ensures clean bus release. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus with registered input/output paths; supports simultaneous 4-byte burst transfers with full timing predictability. |
| LBO | Burst order select | Static input selecting linear (LBO=LOW) or interleaved (LBO=HIGH) burst sequence; must remain stable during operation. |
| TMS, TDI, TCK, TDO, TRST | JTAG interface | Boundary-scan test access port; TRST is optional asynchronous reset; all JTAG pins have internal pull-ups per spec. |
| VDD, VDDQ, VSS | Power supplies | VDD (3.3 V ±5%) powers core logic; VDDQ (3.3 V ±5%) powers I/O buffers; VSS is common ground; decoupling required per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive read/write operations - enables continuous 166 MHz burst streaming without inter-cycle gaps. |
| Internally synchronized OE | Removes need for external OE timing control; output drivers auto-enable/disable based on internal pipeline state - simplifies PCB routing and timing closure. |
| 4-word burst counter | Reduces address bus activity by 75% per burst; supports both linear and interleaved sequences via LBO pin - ideal for cache-line-aligned accesses. |
| Individual byte write (BW1–BW4) | Enables precise 9-bit sub-word updates without disturbing adjacent bytes - critical for protocol header manipulation and metadata patching. |
| Three chip enables (CE1/CE2/CE2) | Supports depth expansion across multiple devices with glitch-free deselection; tri-states data bus within two clocks after disable assertion. |
| Sleep mode (ZZ) | Reduces power consumption to minimum retention level while preserving data; CLK gated internally; supported in BQG165 package (pin H11). |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit switch ASIC interfaces. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level packet buffer with deterministic 3.5 ns read access and zero-turnaround burst writes. Use Value: Enables full-line-rate processing at 10 Gbps+ by eliminating bus idle cycles during header rewrite and payload reordering. |
Use Scenario: Frame buffering in SONET/SDH OC-192 line cards requiring burst-aligned access to ATM cell payloads. IC Role / Device Role / Timing Role: Synchronous ZBT SRAM providing 4-word burst reads aligned to 53-byte ATM cell boundaries with LBO-configurable interleaving. Use Value: Matches telecom framing requirements without external burst sequencers - reduces FPGA logic utilization and board area. |
| Baseband Processor Cache | Radar Signal Processing Buffer |
|
Use Scenario: Temporary storage of channel estimation coefficients and FFT outputs in LTE/5G baseband SoCs. IC Role / Device Role / Timing Role: Low-latency, pipelined SRAM interfacing directly to DSP cores with 166 MHz clock domain and byte-selectable write granularity. Use Value: Supports real-time coefficient updates via BW1–BW4 without corrupting adjacent processing data - improves algorithm convergence stability. |
Use Scenario: Capturing and buffering high-speed ADC samples (e.g., 12-bit @ 200 MSPS) in phased-array radar front ends. IC Role / Device Role / Timing Role: Industrial-temperature SRAM with 3.3 V I/O and robust timing margin (3.5 ns access) for direct connection to high-speed ADC/DAC interfaces. Use Value: Guarantees data integrity over –40°C to +85°C ambient while sustaining 664 MB/s sustained bandwidth for real-time beamforming. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-167BZI | 256K × 18-bit (4.5 Mbit), 167 MHz, same ZBT architecture but x18 organization - requires two devices for 36-bit width. | Targeted at systems with 18-bit data buses or needing depth expansion flexibility; lacks integrated JTAG and sleep mode (ZZ). | Select when 18-bit interface matches system bus or when lower pin count (100-TQFP) is prioritized over density and debug features. |
| AS7C33128PFSIG | 128K × 32-bit (4 Mbit), 166 MHz, standard sync SRAM (no ZBT), 32-bit bus, no burst counter or JTAG. | Used in cost-sensitive embedded controllers where zero-turnaround is not required; no ADV/LD or LBO functionality. | Choose only if ZBT timing and burst features are unnecessary and 32-bit width suffices - avoids over-specification and cost premium. |
Compared with CY7C1356BV18-167BZI and AS7C33128PFSIG, the 71V3556SA166BQG8 uniquely delivers 36-bit ZBT operation with integrated JTAG, sleep mode, and flexible burst control - making it optimal for high-performance telecom and defense applications demanding deterministic latency and debug readiness.
Availability
71V3556SA166BQG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processor cache, and radar signal processing applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.
Supply support for 71V3556SA166BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3556SA166BQG8 belongs to Renesas' ZBT SRAM product line, engineered specifically for high-speed networking and communications equipment where zero bus turnaround, burst efficiency, and industrial reliability are mandatory.
FAQ
What is the memory organization and total capacity of the 71V3556SA166BQG8?
The 71V3556SA166BQG8 is configured as 128K × 36-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. This organization supports 36-bit-wide data transfers and is optimized for high-throughput applications such as network packet buffering and telecom frame storage. The device does not support x18 mode - it is fixed at 128K × 36.
Does the 71V3556SA166BQG8 support JTAG boundary-scan testing?
Yes, the 71V3556SA166BQG8 includes full IEEE 1149.1-compliant JTAG support with dedicated TMS, TDI, TCK, TDO, and optional TRST pins. These signals are implemented in the BQG165 package (pins R1–R5, N7, P7), enabling in-system testability and debug without requiring external test logic - a key advantage over non-JTAG SRAMs like AS7C33128PFSIG.
How does the ZBT™ feature eliminate bus turnaround cycles in the 71V3556SA166BQG8?
The 71V3556SA166BQG8 achieves zero bus turnaround by using internally synchronized output enable and pipelined register stages: address/control is latched on cycle n, and data appears on cycle n+2. This allows a write cycle to be immediately followed by a read cycle (or vice versa) without bus contention or idle cycles - unlike standard sync SRAMs that require explicit OE control and gap timing.
What is the function of the ADV/LD and LBO pins on the 71V3556SA166BQG8?
ADV/LD controls whether the device loads a new external address (ADV/LD = LOW) or advances its internal burst counter (ADV/LD = HIGH). LBO selects burst order: LOW enables linear sequence (0,1,2,3), HIGH enables interleaved (0,2,1,3). Both pins are static - LBO must remain stable during operation, and ADV/LD timing directly governs burst initiation and address flow in the 71V3556SA166BQG8.
Is the 71V3556SA166BQG8 qualified for industrial temperature operation?
Yes, the 71V3556SA166BQG8 is fully qualified for industrial temperature range (–40°C to +85°C), as confirmed in Renesas documentation (5281 tbl 05). This rating applies to the BQG165 package variant and supports deployment in base stations, outdoor telecom gear, and industrial automation systems where ambient thermal stress exceeds commercial grade limits.
71V3556SA166BQG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3556SA166BQG8 FAQ
1.How can I place an order for 71V3556SA166BQG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA166BQG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA166BQG8 reliable?
The price and inventory of 71V3556SA166BQG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA166BQG8 is usually 5 days.
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4.How is shipping managed for 71V3556SA166BQG8?
71V3556SA166BQG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA166BQG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA166BQG8?
For technical support, including 71V3556SA166BQG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA166BQG8 requirements.
6.How does Aetrix verify that 71V3556SA166BQG8 is sourced from the original manufacturer or authorized distributors?
All 71V3556SA166BQG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA166BQG8 meets industry standards.
7.What is the process for return or replacement of 71V3556SA166BQG8?
All 71V3556SA166BQG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA166BQG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA166BQG8 part is unused and in its original packaging.
Return procedure for 71V3556SA166BQG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA166BQG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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AT24C08C-STUM-T
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