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Renesas 71V3556SA166BQGI
- Part No.:
- 71V3556SA166BQGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3556SA166BQGI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V3556SA166BQGI from Renesas is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 166 MHz clock frequency, 3.5 ns clock-to-data access time, zero bus turnaround architecture, and pipelined outputs. It serves as high-speed buffer/memory in network packet processors, telecom line cards, and FPGA-based data path acceleration where burst reads/writes and dead-cycle elimination are critical.
For engineers reviewing the 71V3556SA166BQGI datasheet, 71V3556SA166BQGI pinout, 71V3556SA166BQGI application, or 71V3556SA166BQGI equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), JTAG IEEE 1149.1 test interface availability, and 4-word burst mode with linear/interleaved ordering.
Technical Context
The 71V3556SA166BQGI implements a fully synchronous, positive-edge-triggered architecture with registered address, control, and I/O paths. Its ZBT™ feature eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions without dead cycles.
It integrates an on-chip 4-word burst counter controlled by ADV/LD and LBO pins, supports individual byte write (BW1–BW4) for 9-bit subword granularity, and includes three chip enables (CE1, CE2, CE2) for depth expansion. The optional boundary-scan JTAG interface complies with IEEE 1149.1 and is implemented in the SA variant.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports high-bandwidth parallel data paths in packet buffering and frame assembly. |
| Clock Frequency | 166 MHz; enables 166 MT/s throughput with deterministic 3.5 ns clock-to-data access for real-time systems. |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; dual-rail I/O/core separation ensures signal integrity in mixed-noise environments. |
| Burst Capability | 4-word interleaved or linear burst; reduces address overhead and improves sequential bandwidth in cache-like applications. |
| Operating Temperature | –40°C to +85°C industrial grade; qualified for deployment in base station equipment and industrial controllers. |
| JTAG Support | IEEE 1149.1 compliant (SA version); enables in-system test, debug, and boundary-scan verification without external probes. |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard); compatible with automated SMT assembly and thermal management in dense PCB layouts. |
Pinout & Package
71V3556SA166BQGI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14, 16, and 66 tolerate VIH-level inputs without direct VDD connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Positive-edge-triggered master timing reference; all synchronous registers (address, control, I/O) latch on rising edge. |
| A0–A16 | Address inputs | 17-bit address bus for 128K-depth addressing; latched synchronously with CLK, ADV/LD low, and valid chip enables. |
| R/W | Read/Write control | Synchronous signal determining cycle type; read/write decision is latched at load cycle and governs subsequent burst behavior. |
| ADV/LD | Advance burst / Load address | Controls burst counter increment (HIGH) or external address load (LOW); determines burst sequence continuity and address source. |
| LBO | Linear/Interleaved burst order | Static input selecting burst pattern; LOW = linear (0,1,2,3), HIGH = interleaved (0,2,1,3); must remain stable during operation. |
| BW1–BW4 | Byte write enables | Four active-low signals controlling 9-bit subword writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); allows partial-word updates without read-modify-write. |
| CE1, CE2, CE2 | Chip enable inputs | Three independent enables (CE1/CE2 active-low, CE2 active-high); enable depth expansion and hierarchical memory mapping. |
| OE | Output enable | Asynchronous, active-low control of I/O bus drivers; tri-states outputs independently of clock, simplifying bus arbitration. |
| TMS, TDI, TCK, TDO, TRST | JTAG test interface | IEEE 1149.1 boundary-scan signals; TRST is optional asynchronous reset; all except TDO are inputs with internal pull-ups. |
| VDD, VDDQ, VSS | Power and ground | VDD = 3.3 V core supply; VDDQ = 3.3 V I/O supply; VSS = common ground; separate rails reduce switching noise coupling. |
| ZZ | Sleep mode input | Active-high synchronous entry into low-power retention mode; gates internal clock and reduces dynamic power while preserving data. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read/write transitions, enabling continuous 166 MT/s throughput without bus idle periods. |
| Pipelined Outputs with Internal OE Sync | Output buffer enable is internally synchronized to CLK, removing external OE timing constraints and simplifying system timing closure. |
| 4-Word Burst Counter | Reduces address bus activity by 75% for sequential accesses; LBO pin selects linear or interleaved order per JEDEC standards. |
| Individual Byte Write Control | Four BWx signals allow selective 9-bit word updates-critical for protocol header manipulation and partial register writes. |
| Three Chip Enables | Supports seamless memory depth expansion across multiple devices without external logic, reducing BOM count and layout complexity. |
| Industrial Temperature Range | Rated for –40°C to +85°C operation, validated for reliability in telecom infrastructure and industrial automation environments. |
Applications
| Packet Buffering in Switch ASICs | Frame Assembly in Telecom Line Cards |
|---|---|
Use Scenario: High-speed Ethernet switch fabric buffers ingress/egress packets at line rate (10G/25G). IC Role / Device Role / Timing Role: 71V3556SA166BQGI acts as a low-latency, burst-capable FIFO buffer with ZBT™-enabled read-after-write for pointer management. Use Value: 3.5 ns clock-to-data access and zero-turnaround timing eliminate pipeline stalls, sustaining full 166 MT/s throughput under mixed traffic loads. |
Use Scenario: SONET/SDH framer IC assembles ATM cells or OTN frames before serialization. IC Role / Device Role / Timing Role: 71V3556SA166BQGI provides synchronous, burst-mode scratchpad memory for frame header and payload staging. Use Value: 4-word linear burst mode aligns with fixed-length cell processing, reducing address generation overhead and improving determinism. |
| FPGA-Based Data Path Acceleration | Real-Time Signal Processing Buffers |
Use Scenario: FPGA co-processor handles video encoding/decoding with multi-stage pipeline requiring intermediate frame storage. IC Role / Device Role / Timing Role: 71V3556SA166BQGI serves as a high-bandwidth, low-jitter line buffer interfacing with FPGA DDR interfaces via parallel bus. Use Value: Pipelined outputs and registered I/O ensure setup/hold compliance at 166 MHz, eliminating external timing margining components. |
Use Scenario: Radar DSP subsystem stores ADC samples and FFT coefficients with strict latency bounds. IC Role / Device Role / Timing Role: 71V3556SA166BQGI operates as a deterministic-access scratchpad supporting simultaneous read/write via ZBT™ architecture. Use Value: Sleep mode (ZZ) enables power gating between processing bursts, reducing average power by >40% without data loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-166BZI | 256K × 18-bit organization, same 166 MHz speed, but no JTAG; uses different burst control (BWS vs. ADV/LD). | Optimized for x18 data width systems (e.g., legacy PCI-X); lacks ZBT™-compatible read-after-write timing guarantees. | Select when x18 interface matches system bus width and JTAG is unnecessary; verify burst timing against ZBT™-specific protocols. |
| AS7C33128PFSIG-166 | 128K × 36-bit, 166 MHz, industrial temp, but no ZBT™ architecture or burst counter; asynchronous OE only. | Suitable for simpler buffering where zero-turnaround is not required; higher latency in mixed R/W sequences. | Choose for cost-sensitive designs where ZBT™ and burst features are unused; requires external OE timing control and suffers 1-cycle turnaround penalty. |
Compared with CY7C1356BV18-166BZI and AS7C33128PFSIG-166, the 71V3556SA166BQGI uniquely delivers guaranteed zero bus turnaround, integrated 4-word burst counter with LBO selection, and IEEE 1149.1 JTAG - making it the only option for deterministic, high-throughput, testable SRAM in telecom and networking ASIC interfaces.
Availability
71V3556SA166BQGI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and high-performance computing applications requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.
Supply support for 71V3556SA166BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions for automotive, industrial, and communications markets.
The 71V3556SA166BQGI belongs to Renesas' ZBT™ SRAM product line, engineered specifically for zero-latency, burst-capable memory interfacing in high-speed packet processing, network switching, and FPGA-adjacent data path acceleration.
FAQ
What is the memory organization and total capacity of the 71V3556SA166BQGI?
The 71V3556SA166BQGI is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports 36-bit parallel data paths ideal for high-throughput applications such as network packet buffering and FPGA co-processing. The device does not support 256K × 18 mode - that is exclusive to the 71V3558SA family members.
Does the 71V3556SA166BQGI support JTAG boundary-scan testing?
Yes, the 71V3556SA166BQGI includes full IEEE 1149.1-compliant JTAG boundary-scan functionality, as indicated by the "SA" suffix in its part number. Pins TMS, TDI, TCK, TDO, and optional TRST are implemented in the TQFP-100 package. TRST is not required, as automatic JTAG reset occurs at power-up and via TMS/TCK sequences.
How does the ZBT™ feature eliminate dead cycles in the 71V3556SA166BQGI?
The ZBT™ (Zero Bus Turnaround) architecture in the 71V3556SA166BQGI enables immediate transition between read and write operations without inserting idle cycles. This is achieved through internal pipelining and dedicated output buffer synchronization, allowing the next access to begin on the very next clock edge - a critical advantage in high-speed packet forwarding and real-time DSP buffering.
What is the function of the ADV/LD and LBO pins on the 71V3556SA166BQGI?
ADV/LD controls whether the internal burst counter advances (HIGH) or loads a new external address (LOW). LBO selects burst order: LOW enables linear sequence (0,1,2,3), HIGH enables interleaved (0,2,1,3). Both signals are sampled synchronously on the rising CLK edge and must remain static during burst execution to avoid undefined behavior in the 71V3556SA166BQGI.
Is the 71V3556SA166BQGI rated for industrial temperature operation?
Yes, the 71V3556SA166BQGI is specified for industrial temperature range operation from –40°C to +85°C. This rating is confirmed in the Absolute Maximum Ratings and Recommended Operating Conditions tables, and applies to the BQGI suffix variant. It is qualified for use in base stations, industrial PLCs, and outdoor networking equipment.
71V3556SA166BQGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3556SA166BQGI FAQ
1.How can I place an order for 71V3556SA166BQGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA166BQGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA166BQGI reliable?
The price and inventory of 71V3556SA166BQGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA166BQGI is usually 5 days.
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Once your 71V3556SA166BQGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA166BQGI?
For technical support, including 71V3556SA166BQGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA166BQGI requirements.
6.How does Aetrix verify that 71V3556SA166BQGI is sourced from the original manufacturer or authorized distributors?
All 71V3556SA166BQGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA166BQGI meets industry standards.
7.What is the process for return or replacement of 71V3556SA166BQGI?
All 71V3556SA166BQGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA166BQGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA166BQGI part is unused and in its original packaging.
Return procedure for 71V3556SA166BQGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA166BQGI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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