Renesas 71V3556SA166BQGI8
- Part No.:
- 71V3556SA166BQGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3556SA166BQGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V3556SA166BQGI8 from IDT (now Renesas) is a 3.3V, 128K × 36-bit synchronous ZBT™ SRAM with zero bus turnaround, 166 MHz operation (3.5 ns clock-to-data access), pipelined outputs, and JTAG boundary scan support. It features four-word burst capability (linear or interleaved), individual byte write control (BW1–BW4), and three chip enables for depth expansion - deployed in high-speed networking and packet buffering applications.
For engineers reviewing the 71V3556SA166BQGI8 datasheet, 71V3556SA166BQGI8 pinout, 71V3556SA166BQGI8 application, or 71V3556SA166BQGI8 equivalent, key selection considerations include its ZBT™ architecture eliminating dead cycles between read/write transitions, synchronous OE-free output enable, industrial temperature range (–40°C to +85°C), and 165-ball fine-pitch BGA (BQG165) packaging with JTAG-compliant TMS/TDI/TCK/TDO/TRST pins.
Technical Context
The 71V3556SA166BQGI8 implements a fully pipelined synchronous interface where address/control signals are registered on the rising edge of CLK, and data appears two cycles later. Its internal burst counter advances on ADV/LD = HIGH, with LBO selecting linear or interleaved sequences - enabling deterministic 4-word bursts without external counters.
ZBT™ operation is enforced via synchronized R/W and ADV/LD sampling: a write followed immediately by a read (or vice versa) incurs no bus idle time. The device supports optional IEEE 1149.1 JTAG boundary scan (TMS/TDI/TCK/TDO/TRST), with TRST as an asynchronous reset - available only in BGA packages per documentation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via pin-compatible variant - enables flexible data-width matching in bus architectures. |
| Clock Frequency | 166 MHz maximum; guarantees 3.5 ns clock-to-data access time - meets timing budgets for OC-48/STM-16 packet processors and switch fabric controllers. |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails reduce noise coupling and support mixed-signal SoC interfacing. |
| Burst Mode | 4-word linear or interleaved burst (LBO-controlled); eliminates need for external address sequencers in streaming buffer applications. |
| Operating Temperature | –40°C to +85°C industrial grade; validated for deployment in telecom chassis, base station line cards, and industrial PLCs. |
| JTAG Support | IEEE 1149.1-compliant boundary scan with TMS/TDI/TCK/TDO/TRST; enables in-system testability and debug visibility in dense BGA layouts. |
| Package | 165-ball fine-pitch BGA (BQG165); JEDEC-standard footprint with 0.8 mm pitch - optimized for high-density PCB routing and thermal dissipation. |
Pinout & Package
71V3556SA166BQGI8 is packaged in a 165-ball fine-pitch ball grid array (BQG165) per JEDEC MO-245, with 0.8 mm pitch and 13 mm × 15 mm body size. Pin functions are defined for the 128K × 36 configuration; unused pins in 256K × 18 mode are marked NC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Rising-edge-triggered master timing reference; all synchronous inputs (address, R/W, ADV/LD, BWx, CE) sampled here - defines pipeline depth and timing closure. |
| A0–A16 | Address inputs | 17-bit address bus for 128K × 36 configuration; A17 is NC - directly maps to memory map without external decoding logic. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data path (32 data + 4 parity); each byte group has dedicated BWx control - enables partial writes without read-modify-write overhead. |
| R/W | Read/Write control | Synchronous signal determining cycle type; sampled with ADV/LD to initiate load or burst - critical for ZBT™ bus turnaround elimination. |
| ADV/LD | Burst advance / address load | High = increment internal burst counter; Low = load new external address - enables seamless transition between random and sequential access modes. |
| LBO | Burst order select | Static input setting linear (LBO = LOW) or interleaved (LBO = HIGH) burst sequence - matches CPU cache line or DMA engine addressing patterns. |
| TMS, TDI, TCK, TDO, TRST | JTAG boundary scan | IEEE 1149.1 test interface; TRST is optional asynchronous reset - provides structural test coverage for solder joint integrity and interconnect verification. |
| ZZ | Sleep mode | Synchronous high-level input gating internal clock; reduces dynamic power while retaining data - used during system idle states in power-sensitive designs. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive read/write operations - increases effective bus utilization by up to 30% in burst-intensive packet forwarding paths. |
| Pipelined Output Enable | OE is internally synchronized; no external timing control needed - simplifies PCB layout and removes setup/hold constraints on OE signal routing. |
| Four-Word Burst Counter | On-chip counter generates linear or interleaved addresses automatically - removes need for external burst logic or FPGA-based address generation. |
| Individual Byte Write (BW1–BW4) | Per-byte write enables allow selective 9-bit updates without masking - essential for protocol header modification and metadata tagging in network processors. |
| Three Chip Enables (CE1, CE2, CE2) | Asymmetric polarity (CE1/CE2 active-low, CE2 active-high) enables flexible depth expansion with minimal glue logic - supports multi-chip memory banks up to 1M × 36. |
| JTAG Boundary Scan (IEEE 1149.1) | Full scan chain including I/O pins and internal registers - enables automated optical inspection (AOI) validation and post-soldering interconnect testing. |
Applications
| Packet Buffering in Switch Fabric | Network Processor Cache |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate throughput requirements. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfaced to multiple ASIC ports via synchronous bus. Use Value: ZBT™ architecture enables back-to-back read/write cycles during header parsing and payload reassembly - reducing average latency by 2.1 ns per transition. |
Use Scenario: Acting as instruction/data cache for multi-threaded network processors executing deep packet inspection algorithms. IC Role / Device Role / Timing Role: Pipelined SRAM providing deterministic 3.5 ns access to cached microcode and flow-state tables. Use Value: Four-word burst mode aligns with 128-bit wide instruction fetch buses - delivering 664 MB/s sustained bandwidth at 166 MHz. |
| Base Station Channel Processing | Industrial PLC Data Logging |
Use Scenario: Temporary storage of OFDM symbol buffers and channel estimation results in LTE/5G remote radio units. IC Role / Device Role / Timing Role: Synchronous memory co-located with DSP cores for real-time FFT/IFFT and equalization pipelines. Use Value: Industrial temperature rating (–40°C to +85°C) and JTAG testability ensure reliability in uncontrolled outdoor enclosures. |
Use Scenario: Cyclic data acquisition buffer for sensor fusion in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Local memory holding timestamped analog/digital I/O snapshots prior to Ethernet upload. Use Value: Sleep mode (ZZ pin) reduces standby current to <50 µA - extending battery life in backup-powered logging modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-166BZXI | 128K × 36, 166 MHz, 3.3V, but lacks JTAG and ZZ sleep mode; uses 100-pin TQFP only. | No boundary scan testability; unsuitable for high-reliability telecom systems requiring in-system diagnostics. | Select when JTAG and sleep mode are unnecessary and TQFP assembly is preferred over BGA. |
| AS7C33128P-166BIN | 128K × 36, 166 MHz, 3.3V, no ZBT™ - standard synchronous SRAM with 5.5 ns access; supports only 100-pin TQFP. | Introduces 2 ns additional bus turnaround delay per R/W transition - limits peak throughput in burst-heavy workloads. | Select for cost-sensitive industrial controls where ZBT™ performance is not required and TQFP is mandated. |
Compared with CY7C1371DV33-166BZXI and AS7C33128P-166BIN, the 71V3556SA166BQGI8 uniquely delivers ZBT™ bus efficiency, JTAG testability, and low-power sleep mode in a fine-pitch BGA - making it optimal for space-constrained, high-assurance networking hardware.
Availability
71V3556SA166BQGI8 is available at Aetrix Electronics and suitable for packet switching infrastructure, network processor subsystems, and industrial baseband processing requiring stable component supply across extended product lifecycles.
Supply support for 71V3556SA166BQGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF solutions for communications and computing markets.
The 71V3556SA166BQGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in packet-forwarding engines, switch fabrics, and real-time signal processing systems.
FAQ
What is the memory organization and density of the 71V3556SA166BQGI8?
The 71V3556SA166BQGI8 is configured as 128K × 36 bits, delivering 4,718,592 total bits (4.5 Mbit) of synchronous SRAM. This organization supports 36-bit-wide data paths common in network processors and DSPs, and the device is pin-compatible with the 256K × 18 variant for design flexibility.
Does the 71V3556SA166BQGI8 support JTAG boundary scan, and which pins implement it?
Yes, the 71V3556SA166BQGI8 supports IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are assigned to JTAG functionality in the BQG165 package - confirmed in the "Pin Configuration - 128K x 36, BQ165" diagram and functional block diagram.
How does the ZBT™ feature eliminate bus dead cycles in the 71V3556SA166BQGI8?
The 71V3556SA166BQGI8 achieves zero bus turnaround by allowing immediate read-after-write or write-after-read transitions without idle cycles. This is implemented via synchronized sampling of R/W and ADV/LD on the same clock edge, ensuring the bus remains active across consecutive operations - verified in the Synchronous Truth Table and Functional Block Diagram.
What is the role of the ADV/LD and LBO pins in burst operation of the 71V3556SA166BQGI8?
In the 71V3556SA166BQGI8, ADV/LD = LOW loads a new external address, while ADV/LD = HIGH increments the internal burst counter. LBO selects burst order: LOW enables linear sequence (0,1,2,3), HIGH enables interleaved (0,2,3,1). These functions are explicitly defined in the Pin Definition table and Linear/Interleaved Burst Sequence Tables.
What package type and ball count does the 71V3556SA166BQGI8 use, and is it RoHS compliant?
The 71V3556SA166BQGI8 uses a 165-ball fine-pitch BGA (BQG165) package per JEDEC MO-245, with 0.8 mm pitch and 13 mm × 15 mm body. The "G" suffix in the part number denotes green (lead-free/RoHS-compliant) construction, confirmed in the ordering information section of the datasheet.
71V3556SA166BQGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3556SA166BQGI8 FAQ
1.How can I place an order for 71V3556SA166BQGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA166BQGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA166BQGI8 reliable?
The price and inventory of 71V3556SA166BQGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA166BQGI8 is usually 5 days.
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6.How does Aetrix verify that 71V3556SA166BQGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3556SA166BQGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA166BQGI8 meets industry standards.
7.What is the process for return or replacement of 71V3556SA166BQGI8?
All 71V3556SA166BQGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA166BQGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA166BQGI8 part is unused and in its original packaging.
Return procedure for 71V3556SA166BQGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA166BQGI8 Tags

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M24C02-WMN6TP
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