Renesas 71V3557S75BG8

Overview

71V3557S75BG8 from Integrated Device Technology is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with flow-through outputs, 7.5 ns clock-to-data access at 100 MHz, and integrated burst counter supporting linear/interleaved 4-word bursts. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring zero bus turnaround between read/write cycles.

For engineers reviewing the 71V3557S75BG8 datasheet, 71V3557S75BG8 pinout, 71V3557S75BG8 application, or 71V3557S75BG8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, JTAG boundary-scan support, individual byte write control (BW1–BW4), and industrial temperature range (–40°C to +85°C) operation.

Technical Context

The 71V3557S75BG8 implements a synchronous dual-edge-triggered architecture where address/control inputs register on the rising CLK edge, and data output is flow-through (no output register), enabling deterministic 1-cycle latency from address load to valid data. Its ZBT™ feature eliminates dead cycles during bus direction reversal by decoupling read/write initiation from data transfer timing.

Burst sequencing is controlled via ADV/LD (load new address or increment internal counter) and LBO (linear vs. interleaved order), while three chip enables (CE1, CE2, CE2) support depth expansion. The device includes optional IEEE 1149.1 JTAG for boundary-scan testing and a synchronous ZZ pin for low-power sleep mode with guaranteed data retention.

Key Specifications

Pinout & Package

71V3557S75BG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 is located at top-left corner (notch-marked side), with pins numbered counter-clockwise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV25-100AXC and AS7C33128PFS-10BIN, the 71V3557S75BG8 uniquely delivers ZBT™ timing, flow-through outputs, and integrated burst control in a single industrial-grade package-enabling higher system throughput and reduced FPGA logic utilization in burst-oriented architectures.

Availability

71V3557S75BG8 is available at Aetrix Electronics and suitable for network infrastructure, telecom line cards, and industrial control systems requiring stable component supply, long-term lifecycle support, and industrial temperature performance.

Supply support for 71V3557S75BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing markets.

The 71V3557S75BG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-throughput, low-latency buffering in packet-switched networks and real-time signal processing systems.

FAQ

What is the memory organization of the 71V3557S75BG8?

The 71V3557S75BG8 is organized as 128K × 36 bits (4.5 Mbit), supporting both 128K × 36 and 256K × 18 configurations via address mapping. In 128K × 36 mode, it uses A0–A16 for row addressing and BW1–BW4 for 9-bit byte selection, delivering full 36-bit parallel access with ZBT™ timing compliance.

Does the 71V3557S75BG8 support JTAG boundary-scan testing?

Yes, the 71V3557S75BG8 includes a fully compliant IEEE 1149.1 JTAG interface with TMS, TDI, TCK, TDO, and optional TRST pins. This enables board-level interconnect testing and in-system programming verification-critical for high-reliability telecom and industrial applications using the 71V3557S75BG8.

How does the ZBT™ feature improve system performance in the 71V3557S75BG8?

The ZBT™ (Zero Bus Turnaround) feature in the 71V3557S75BG8 eliminates idle cycles between consecutive read and write operations. By decoupling address loading from data transfer timing, it enables back-to-back memory accesses at full 100 MHz clock rate-increasing effective bandwidth by up to 30% in burst-intensive packet processing applications using the 71V3557S75BG8.

What is the function of the ADV/LD and LBO pins on the 71V3557S75BG8?

ADV/LD controls burst sequencing: low loads a new external address; high advances the internal burst counter. LBO selects burst order-low for linear, high for interleaved. Together, they enable the 71V3557S75BG8 to execute deterministic 4-word bursts matching CPU cache line patterns without external state machines.

Can the 71V3557S75BG8 operate in low-power mode?

Yes, the 71V3557S75BG8 supports synchronous sleep mode via the ZZ pin. When asserted high, ZZ gates the internal clock and reduces power consumption by >80% while guaranteeing data retention-making it suitable for power-aware telecom modules and portable medical devices using the 71V3557S75BG8.