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Renesas 71V3557S75BGG

Part No.:
71V3557S75BGG
Manufacturer:
Renesas
Category:
Memory
Package:
119-BGA
Datasheet:
Aetrix71V3557S75BGG.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,437

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Product details

Overview

71V3557S75BGG from Integrated Device Technology is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with flow-through outputs, 7.5 ns clock-to-data access at 100 MHz, and zero bus turnaround for high-speed memory interfacing in network packet buffers and cache controllers.

For engineers reviewing the 71V3557S75BGG datasheet, 71V3557S75BGG pinout, 71V3557S75BGG application, or 71V3557S75BGG equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), JTAG boundary scan compliance, sleep mode (ZZ), and TQFP-100 packaging with verified 3.3V core/I/O supply compatibility.

Technical Context

The 71V3557S75BGG implements a synchronous dual-edge-triggered architecture with address/control registers clocked on the rising edge of CLK. Its internal burst counter advances on ADV/LD = HIGH, enabling four-word bursts without external sequencing logic.

It features flow-through output architecture (no output register), asynchronous OE for tri-state control, and three chip enables (CE1, CE2, CE2) supporting depth expansion. The optional IEEE 1149.1 JTAG interface includes TMS, TDI, TCK, TDO, and TRST pins for boundary scan testing.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via pin-compatible variant
Clock Frequency100 MHz maximum - enables 10 ns cycle time for high-bandwidth data buffering
Access Time7.5 ns clock-to-data - defines minimum latency between CLK rise and valid I/O output
Supply VoltageVDD = 3.3 V ±5%, VDDQ = 3.3 V ±5% - requires separate core and I/O rail regulation
Burst Capability4-word linear or interleaved burst - reduces address bus cycles by 75% per burst sequence
Operating Temperature–40°C to +85°C (industrial grade) - validated for embedded telecom and industrial control environments
Package100-pin TQFP (14 mm × 20 mm, JEDEC standard) - surface-mount compatible with automated assembly

Pinout & Package

71V3557S75BGG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch leads. Pin 1 is located at top-left corner (notch-marked side).

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address InputsSynchronous inputs latched on rising CLK edge; A0–A16 used for 128K×36 mode
CE1, CE2, CE2Chip EnablesThree independent enables: CE1/CE2 active-low, CE2 active-high; any false deselects device in one cycle
R/WRead/Write ControlSynchronous signal determining cycle type; sampled with ADV/LD to initiate load/burst operation
ADV/LDAdvance Burst / Load AddressLow = load new external address; High = increment internal burst counter; controls burst sequencing
LBOLinear/Interleaved Burst OrderStatic input: LOW = linear burst (0,1,2,3), HIGH = interleaved (0,1,2,3 per IEEE Std)
BW1–BW4Byte Write EnablesFour active-low signals controlling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4)
ZZSleep Mode InputActive-high synchronous input that gates internal CLK and reduces power while retaining data
TMS, TDI, TCK, TDO, TRSTJTAG Boundary ScanIEEE 1149.1-compliant test interface; TRST is optional asynchronous reset

Key Features

FeatureDesign Value
ZBT™ Zero Bus TurnaroundEliminates dead cycles between read/write transitions - enables back-to-back memory accesses without bus idle time
Flow-through Output ArchitectureRemoves output register delay - data appears on I/O pins within 7.5 ns of CLK edge, simplifying timing closure
Individual Byte Write ControlFour independent BWx pins allow selective 9-bit writes - avoids full-word overwrites in partial-update applications
Programmable Burst SequenceLBO pin selects linear or interleaved order - matches CPU/cache burst patterns without external logic
Integrated JTAG Boundary ScanFull IEEE 1149.1 support with TAP controller - enables board-level interconnect test and debug without physical probes
Synchronous Sleep Mode (ZZ)Reduces dynamic power by gating internal clock while preserving data - critical for low-power standby in networking gear

Applications

Packet Buffering in Switches/RoutersCache Memory for DSP Co-processors

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switching ASICs with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer providing 100 MHz burst reads/writes with zero turnaround overhead.

Use Value: Enables line-rate forwarding at 1 Gbps+ by eliminating bus idle cycles during read-write alternation.

Use Scenario: Acting as L1/L2 cache for TI C6000 or Analog Devices SHARC DSPs requiring deterministic memory access.

IC Role / Device Role / Timing Role: Synchronous SRAM delivering 7.5 ns clock-to-data access with flow-through outputs for tight timing margins.

Use Value: Supports dual-issue instruction execution without pipeline stalls caused by memory wait states.

Industrial PLC Data LoggingMedical Imaging Frame Buffers

Use Scenario: Capturing sensor telemetry and control state snapshots in ruggedized programmable logic controllers.

IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C) memory with ZZ sleep mode for power-gated logging intervals.

Use Value: Guarantees data retention during sleep and enables rapid wake-up for burst acquisition without initialization delay.

Use Scenario: Temporary storage of uncompressed DICOM image tiles (e.g., 1024×1024×16-bit) during real-time reconstruction.

IC Role / Device Role / Timing Role: 36-bit wide interface matching parallel pixel bus widths; burst mode aligns with raster-scan memory access.

Use Value: Delivers sustained 400 MB/s bandwidth (100 MHz × 36-bit) needed for real-time CT/MRI frame buffering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1355BV18-100AXC256K × 18-bit organization; 100 MHz, 100-pin TQFP; no JTAG; no ZZ pinLacks sleep mode and boundary scan - unsuitable for power-constrained or test-critical designsSelect when cost-sensitive, non-JTAG, non-sleep applications require same speed and package
IDT71V3559S75BGGSame die, 256K × 18-bit configuration; identical timing, pinout, and feature set except address widthRequires different address decoding logic due to A0–A17 vs. A0–A16 usage; same PCB layoutChoose for higher density in space-constrained layouts where 18-bit data path suffices

Compared with CY7C1355BV18-100AXC and IDT71V3559S75BGG, the 71V3557S75BGG uniquely delivers 128K×36 organization with integrated JTAG and ZZ sleep - essential for testability and power management in next-gen networking hardware.

Availability

71V3557S75BGG is available at Aetrix Electronics and suitable for packet buffering, DSP caching, industrial data logging, and medical imaging frame storage requiring stable component supply across extended product lifecycles.

Supply support for 71V3557S75BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The 71V3557S75BGG belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-performance networking and real-time embedded systems demanding zero bus turnaround, deterministic timing, and industrial temperature reliability.

FAQ

What is the memory organization and total capacity of the 71V3557S75BGG?

The 71V3557S75BGG is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). It supports both 36-bit and 18-bit data interfaces via pin-compatible variants, with A0–A16 used for addressing in the 128K×36 mode. This configuration targets high-bandwidth parallel bus applications such as packet buffering and cache subsystems.

Does the 71V3557S75BGG support burst mode, and how is burst order selected?

Yes, the 71V3557S75BGG supports 4-word burst mode using an internal counter. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW configures linear burst (0,1,2,3), while LBO = HIGH selects interleaved burst (0,1,2,3 per IEEE standard). The ADV/LD signal controls counter advancement - HIGH increments the counter, LOW loads a new external address.

What is the function of the ZZ pin on the 71V3557S75BGG, and how does it affect power consumption?

The ZZ pin on the 71V3557S75BGG is a synchronous sleep mode input. When driven HIGH, it gates the internal clock and places the device in its lowest power state while guaranteeing data retention. This feature reduces dynamic power significantly during idle periods - critical for thermally constrained or battery-backed industrial and networking equipment where the 71V3557S75BGG is deployed.

Is the 71V3557S75BGG compatible with JTAG boundary scan, and which pins are required?

Yes, the 71V3557S75BGG includes optional IEEE 1149.1-compliant JTAG boundary scan. Required pins are TMS (Test Mode Select), TDI (Test Data Input), TCK (Test Clock), TDO (Test Data Output), and TRST (optional asynchronous reset). These are dedicated pins in the 100-pin TQFP package and enable board-level interconnect testing without physical probe access.

How does the 71V3557S75BGG implement zero bus turnaround (ZBT™), and what system-level benefit does it provide?

The 71V3557S75BGG implements ZBT™ by eliminating dead cycles between consecutive read and write operations - the bus remains active with no idle clock cycles required for direction change. This is achieved via synchronized control logic and flow-through outputs. System-level benefit: enables sustained 100 MHz throughput in packet-forwarding engines and cache controllers where alternating read/write sequences would otherwise throttle bandwidth by up to 30%.

71V3557S75BGG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
119-BGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
7.5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

71V3557S75BGG FAQ

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Please submit a Request for Quotation (RFQ) for 71V3557S75BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3557S75BGG reliable?

The price and inventory of 71V3557S75BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3557S75BGG is usually 5 days.

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71V3557S75BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3557S75BGG?

For technical support, including 71V3557S75BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3557S75BGG requirements.

6.How does Aetrix verify that 71V3557S75BGG is sourced from the original manufacturer or authorized distributors?

All 71V3557S75BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3557S75BGG meets industry standards.

7.What is the process for return or replacement of 71V3557S75BGG?

All 71V3557S75BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3557S75BGG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3557S75BGG part is unused and in its original packaging.

Return procedure for 71V3557S75BGG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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