Renesas 71V3557S75PFG

Overview

71V3557S75PFG from Integrated Device Technology is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with flow-through outputs, 7.5 ns clock-to-data access at 100 MHz, and zero bus turnaround for high-speed memory interfacing in network packet buffers and cache controllers.

For engineers reviewing the 71V3557S75PFG datasheet, 71V3557S75PFG pinout, 71V3557S75PFG application, or 71V3557S75PFG equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), JTAG boundary scan compliance, and TQFP-100 packaging with ZZ sleep mode capability.

Technical Context

The 71V3557S75PFG implements a synchronous dual-edge-triggered architecture where address/control registration occurs on the rising CLK edge, with data output appearing one cycle later via flow-through (unregistered) path. Its internal burst counter advances on ADV/LD = HIGH, enabling four-word bursts without external sequencing logic.

ZBT™ operation eliminates dead cycles between read/write transitions by allowing immediate bus direction reversal - enabled by dedicated R/W pin, asynchronous OE, and tri-state control synchronized to chip enable deassertion within one clock cycle. The device supports both linear and interleaved burst orders via static LBO pin configuration.

Key Specifications

Pinout & Package

71V3557S75PFG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 is located at top-left corner (marked dot), and pin numbering proceeds counterclockwise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-100AXC and AS7C3256B-10JIN, the 71V3557S75PFG uniquely combines ZBT™ zero-turnaround, integrated JTAG, and industrial-temperature sleep mode in a single 100-pin TQFP package - making it optimal for high-reliability, high-throughput embedded memory subsystems requiring testability and power management.

Availability

71V3557S75PFG is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and telecom equipment requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for 71V3557S75PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and consumer markets.

The 71V3557S75PFG belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-speed, low-latency memory buffering in packet-switched networks and real-time embedded systems demanding deterministic timing and robust testability.

FAQ

What is the memory organization and total capacity of the 71V3557S75PFG?

The 71V3557S75PFG is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). It supports a pin-compatible 256K × 18-bit configuration via variant selection, maintaining identical timing and interface behavior. This dual-configuration flexibility allows system designers to optimize data bus width without changing PCB layout for the 71V3557S75PFG footprint.

Does the 71V3557S75PFG support burst mode, and how is burst order selected?

Yes, the 71V3557S75PFG supports 4-word burst mode using an internal counter. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW configures linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A1, A2, A3 per IEEE 1149.1-defined pattern). LBO is a static input and must remain stable during burst operation to prevent address misalignment in the 71V3557S75PFG.

What is the function of the ZZ pin on the 71V3557S75PFG, and how does it affect power consumption?

The ZZ pin on the 71V3557S75PFG is the synchronous sleep mode input. When driven HIGH, it gates the internal clock and places the device in its lowest power state while guaranteeing data retention. In sleep mode, core and I/O power draw drops significantly - critical for thermal management in dense telecom line cards. Pin 64 in the TQFP package implements ZZ functionality for the 71V3557S75PFG.

How many chip enable signals does the 71V3557S75PFG have, and what is their logic polarity?

The 71V3557S75PFG has three chip enable signals: CE1 and CE2 are active-low, while CE2 is active-high. Device selection requires CE1 = LOW, CE2 = LOW, and CE2 = HIGH simultaneously. Deselection occurs if any one condition fails, and the data bus tri-states within one clock cycle - enabling clean depth expansion in memory arrays using multiple 71V3557S75PFG devices.

Is JTAG boundary scan supported on the 71V3557S75PFG, and which pins are used?

Yes, the 71V3557S75PFG includes IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST (pin 66) implement the test interface. All JTAG signals are synchronous to CLK, and TRST may be left floating if unused - the TAP controller resets automatically at power-up. This built-in testability simplifies board-level validation for systems integrating the 71V3557S75PFG.