My Inquiry
My Account
Renesas 71V3557S80BGI
- Part No.:
- 71V3557S80BGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3557S80BGI.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,300
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3557S80BGI from Integrated Device Technology is a 128K × 36-bit, 4.5 Mbit synchronous ZBT™ SRAM with 3.3V core/I/O supply, 80 MHz operation (10 ns clock-to-data), flow-through outputs, and 4-word burst capability. It supports linear/interleaved burst order via LBO pin and enables zero bus turnaround between read/write cycles in high-speed packet buffering applications.
For engineers reviewing the 71V3557S80BGI datasheet, 71V3557S80BGI pinout, 71V3557S80BGI application, or 71V3557S80BGI equivalent, key selection criteria include its TQFP-100 package, synchronous burst counter architecture, individual byte write (BW1–BW4), JTAG boundary scan support, and industrial temperature range (–40°C to +85°C).
Technical Context
The 71V3557S80BGI implements a synchronous dual-edge-triggered control architecture where address, R/W, ADV/LD, and BWx are sampled on the rising edge of CLK. Its internal burst counter advances on ADV/LD = HIGH, enabling four consecutive data transfers per address load without external sequencing.
It features flow-through output timing (no output register), asynchronous OE for tri-state control, and a synchronous ZZ pin for sleep mode entry with guaranteed data retention. The device uses three chip enables (CE1, CE2, CE2) with mixed polarity for flexible depth expansion and supports IEEE 1149.1 JTAG testing via TMS/TDI/TCK/TDO/TRST pins.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit configuration via address mapping |
| Clock Frequency | 80 MHz (12.5 ns cycle time); enables 10 ns clock-to-data access for real-time buffering |
| Supply Voltage | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); decoupling required per JEDEC TQFP layout |
| Burst Capability | 4-word burst (linear or interleaved); reduces address bus traffic by 75% during sequential accesses |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full voltage and timing margins |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard); pin-compatible with IDT71V3559S variants |
| JTAG Support | IEEE 1149.1 compliant boundary scan; optional TRST, internal pull-ups on TMS/TDI/TCK |
Pinout & Package
71V3557S80BGI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by dot; top-side marking includes "71V3557S80BGI" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge when ADV/LD = LOW and chip enabled; A0–A16 used for 128K×36 mode |
| CE1, CE2, CE2 | Chip Enables | CE1/CE2 active-low, CE2 active-high; any false enable terminates pending operations after one cycle |
| R/W | Read/Write Control | Synchronous signal defining cycle type; determines data direction one clock cycle later |
| ADV/LD | Address Load / Burst Advance | LOW loads new external address; HIGH increments internal burst counter; controls burst sequence initiation |
| LBO | Burst Order Select | Static input: LOW = linear burst (0,1,2,3), HIGH = interleaved burst (0,2,1,3) |
| BW1–BW4 | Byte Write Enables | Active-low synchronous enables for 9-bit bytes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4) |
| CLK | System Clock | Rising-edge-triggered master timing reference; all synchronous inputs referenced to this edge |
| OE | Output Enable | Asynchronous; drives I/O pins to high-Z when HIGH; may be tied LOW for simplified read operation |
| ZZ | Sleep Mode | Synchronous HIGH gates internal clock and reduces power; data retention guaranteed in sleep state |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; input path registered, output path flow-through (no output register) |
| TMS/TDI/TCK/TDO/TRST | JTAG Interface | IEEE 1149.1 test access port; TRST optional asynchronous reset; internal pull-ups on TMS/TDI/TCK |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read and write bursts, enabling continuous data streaming in network switch buffers |
| 4-Word Synchronous Burst | Reduces address bus overhead by 75% during sequential memory accesses; configurable linear/interleaved order |
| Individual Byte Write Control | Four independent 9-bit write enables (BW1–BW4) allow partial-word writes without read-modify-write cycles |
| Three-Polarity Chip Enables | CE1/CE2 (active-low) + CE2 (active-high) support seamless depth expansion with minimal glue logic |
| Flow-Through Output Architecture | Removes output register delay, delivering data one clock cycle after address/control setup - critical for low-latency systems |
Applications
| High-Speed Network Switch Buffering | Telecom Line Card Packet Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switching ASICs with strict latency budgets. IC Role / Device Role / Timing Role: Primary packet buffer SRAM interfacing directly to MAC controllers and switch fabric interfaces. Use Value: ZBT™ architecture enables back-to-back read/write bursts without turnaround penalty, sustaining >95% bus utilization at 80 MHz. | Use Scenario: Temporary storage of ATM or IP packets in carrier-grade DSLAM or OLT line cards operating at –40°C to +85°C. IC Role / Device Role / Timing Role: Synchronous burst-access memory for ingress/egress packet queues with deterministic 10 ns access timing. Use Value: Industrial temperature rating and 3.3V I/O compatibility ensure reliable operation alongside FPGA-based traffic managers. |
| Baseband Processor Cache Extension | Industrial PLC Real-Time Data Logging |
Use Scenario: Extending L2 cache coherency in multi-core baseband processors handling LTE/5G PHY layer processing. IC Role / Device Role / Timing Role: High-bandwidth, low-latency scratchpad memory supporting burst-mode DMA transfers from DSP cores. Use Value: 4-word burst and flow-through outputs reduce memory stall cycles, improving FFT and channel estimation throughput. | Use Scenario: Cyclic data acquisition and timestamped event logging in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Non-volatile-buffered SRAM holding sensor history and alarm records before flash commit. Use Value: ZZ sleep mode cuts standby current to <100 µA while retaining data - extends battery backup runtime during mains failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1355BV18-100BZI | 128K × 36-bit, 100 MHz, 3.3V, but uses pipelined output register (not flow-through); no ZZ sleep mode | Higher speed but added 1-cycle output latency; unsuitable where sub-10 ns read-to-read timing is required | Select only if system design accommodates pipelined output timing and does not require low-power sleep states |
| AS7C3256P-10JIN | 128K × 32-bit, 10 ns, 3.3V, no burst counter, no JTAG, no byte write enables; simpler control interface | Lacks ZBT™, burst, and advanced features - appropriate for basic FIFO or static buffer use cases | Choose when cost sensitivity outweighs need for burst efficiency, low-latency reads, or testability |
Compared with CY7C1355BV18-100BZI and AS7C3256P-10JIN, the 71V3557S80BGI uniquely delivers zero-turnaround burst operation with flow-through outputs and industrial-grade sleep mode - essential for deterministic real-time buffering in telecom and embedded networking.
Availability
71V3557S80BGI is available at Aetrix Electronics and suitable for high-speed network switch buffering, telecom line card packet memory, and industrial PLC real-time data logging requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3557S80BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and high-performance computing solutions.
The 71V3557S80BGI belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in networking, telecommunications, and real-time embedded systems.
FAQ
What is the maximum clock frequency supported by the 71V3557S80BGI?
The 71V3557S80BGI is rated for 80 MHz operation (12.5 ns clock period) with guaranteed 10 ns clock-to-data access time under industrial conditions. This timing is validated across VDD = 3.135–3.465 V, VDDQ = 3.135–3.465 V, and –40°C to +85°C ambient. Exceeding 80 MHz violates AC timing specifications and may cause data corruption or metastability.
Does the 71V3557S80BGI support both linear and interleaved burst sequences?
Yes, the 71V3557S80BGI supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, it executes linear burst (0,1,2,3); when LBO = HIGH, it executes interleaved burst (0,2,1,3). LBO is a static input and must remain stable during burst operation - changing it mid-burst causes undefined address sequencing.
How does the ZZ (Sleep Mode) pin function on the 71V3557S80BGI?
The ZZ pin on the 71V3557S80BGI is a synchronous input that, when driven HIGH, gates the internal clock and places the device in low-power sleep mode. Core and I/O supplies remain active, and data retention is guaranteed. Upon ZZ returning LOW, normal operation resumes on the next valid CLK edge - no initialization or re-synchronization is required. Internal pulldown ensures safe default state.
Can the 71V3557S80BGI be used in a 256K × 18-bit configuration?
Yes, the 71V3557S80BGI supports 256K × 18-bit organization by remapping address bits: A0–A17 become active (18 address lines), and data width reduces to I/O0–I/O15 + I/OP1–I/OP2. Pin functions remain identical, but burst behavior and byte write enables adapt to the 18-bit mode - BW1/BW2 control two 9-bit bytes, and BW3/BW4 are unused (may be tied HIGH).
Is JTAG boundary scan functionality mandatory or optional on the 71V3557S80BGI?
JTAG boundary scan is optional on the 71V3557S80BGI. Pins TMS, TDI, TCK, TDO, and optional TRST are dedicated to IEEE 1149.1 compliance. If not used, TMS/TDI/TCK can be left floating (internal pull-ups maintain VIH), TRST may float, and TDO becomes high-Z. No configuration fuse or strap disables JTAG - it is always hardware-present but software-controllable.
71V3557S80BGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3557S80BGI FAQ
1.How can I place an order for 71V3557S80BGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3557S80BGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3557S80BGI reliable?
The price and inventory of 71V3557S80BGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3557S80BGI is usually 5 days.
3.What payment methods are accepted for 71V3557S80BGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3557S80BGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3557S80BGI?
71V3557S80BGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3557S80BGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3557S80BGI?
For technical support, including 71V3557S80BGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3557S80BGI requirements.
6.How does Aetrix verify that 71V3557S80BGI is sourced from the original manufacturer or authorized distributors?
All 71V3557S80BGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3557S80BGI meets industry standards.
7.What is the process for return or replacement of 71V3557S80BGI?
All 71V3557S80BGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3557S80BGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3557S80BGI part is unused and in its original packaging.
Return procedure for 71V3557S80BGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3557S80BGI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
