Renesas 71V3557S80BGI8
- Part No.:
- 71V3557S80BGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3557S80BGI8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 119PBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,607
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Product details
Overview
IDT71V3557S80BGI8 from Integrated Device Technology is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with flow-through outputs, 100 MHz clock operation (7.5 ns clock-to-data access), and zero bus turnaround architecture. It supports interleaved/linear 4-word burst reads/writes, individual byte write control (BW1–BW4), and JTAG boundary scan (IEEE 1149.1). Used in high-speed network packet buffers and cache coherency subsystems where deterministic latency and bus efficiency are critical.
For engineers reviewing the IDT71V3557S80BGI8 datasheet, IDT71V3557S80BGI8 pinout, IDT71V3557S80BGI8 application, or IDT71V3557S80BGI8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V core/I/O supply tolerance, synchronous burst counter behavior, and industrial temperature range (–40°C to +85°C) support.
Technical Context
The IDT71V3557S80BGI8 implements a synchronous dual-edge-triggered address/control register pipeline with flow-through data output path-no output register-enabling immediate data availability on CLK edge + tCD. Its burst counter advances on ADV/LD = HIGH and loads new addresses on ADV/LD = LOW, with LBO pin selecting linear or interleaved sequence order.
Three chip enables (CE1, CE2 active-low; CE2 active-high) provide flexible depth expansion, while CEN suspends all synchronous logic without affecting output state. The optional JTAG interface includes TMS, TDI, TCK, TDO, and TRST (asynchronous reset), and ZZ pin enables low-power sleep mode with guaranteed data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits (4.5 Mbit); supports 256K × 18 via pin-compatible variant |
| Clock Frequency | 100 MHz maximum; enables 10 ns cycle time for high-throughput memory access |
| Access Time | 7.5 ns clock-to-data (tCD); defines minimum latency from CLK rise to valid output |
| Supply Voltage | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains reduce noise coupling |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for embedded telecom and industrial control environments |
| Burst Capability | 4-word synchronous burst (linear or interleaved); reduces address bus traffic by 75% per burst |
| Byte Write Control | BW1–BW4 enable independent 9-bit byte writes; eliminates need for read-modify-write cycles |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; pins 14, 64, and 66 require VSS connection per latest die revision (pin 64 supports ZZ sleep mode).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | Synchronous inputs latched on rising CLK edge when ADV/LD = LOW and chip enabled |
| CE1, CE2, CE2 | Chip Enable | CE1/CE2 active-low, CE2 active-high; any false condition initiates one-cycle deselect (tri-state I/O) |
| R/W | Read/Write Control | Synchronous signal defining cycle type; data transfer occurs one clock cycle later |
| ADV/LD | Address Load / Burst Advance | LOW loads external address; HIGH increments internal burst counter; determines burst sequence start point |
| LBO | Burst Order Select | Static input: LOW = linear burst, HIGH = interleaved burst; must remain stable during operation |
| CLK | System Clock | Rising-edge-triggered master timing reference; all synchronous inputs referenced to this edge |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; input path registered, output path flow-through (no output register) |
| ZZ | Sleep Mode Enable | Active-high synchronous input; gates internal CLK and reduces power consumption while retaining data |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read/write transitions-enables back-to-back accesses without bus idle time |
| Flow-Through Output Architecture | Removes output register delay; data appears on I/O bus one clock cycle after address/control setup |
| Four-Word Burst Counter | Reduces external address bus activity by 75% per burst; configurable linear/interleaved order via LBO pin |
| Individual Byte Write (BW1–BW4) | Enables selective 9-bit writes without masking or full-word read-modify-write overhead |
| JTAG Boundary Scan (IEEE 1149.1) | Supports production test and board-level diagnostics; includes TMS, TDI, TCK, TDO, and optional TRST |
Applications
| Network Packet Buffering | Cache Coherency Controller Interface |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with deterministic 7.5 ns tCD and zero-turnaround burst capability. Use Value: Enables line-rate packet processing at 10 Gbps+ by eliminating bus turnaround stalls during header lookups. |
Use Scenario: Acting as shared tag RAM in multi-core processor cache coherence protocols (e.g., MESI). IC Role / Device Role / Timing Role: Synchronous SRAM providing atomic tag updates and fast hit/miss resolution. Use Value: Supports concurrent read/write operations across multiple cache controllers using BW1–BW4 byte enables. |
| Telecom Line Card Control Memory | Industrial PLC Real-Time Data Logging |
|
Use Scenario: Storing configuration tables and real-time status registers in carrier-grade optical transport equipment. IC Role / Device Role / Timing Role: Industrial-temperature SRAM interfacing with FPGA-based control logic over synchronous parallel bus. Use Value: Guaranteed operation from –40°C to +85°C with JTAG testability ensures field reliability and debug access. |
Use Scenario: Buffering sensor acquisition data before batch transfer to flash storage in programmable logic controllers. IC Role / Device Role / Timing Role: Low-power burst-capable memory with ZZ sleep mode for energy-constrained deployments. Use Value: Sleep mode reduces active current by >80%, extending uptime in battery-backed or isolated power systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C1371DV33-100BGXI | 128K × 36, 100 MHz, same TQFP-100 package; no JTAG, no ZZ sleep, different burst control (ADSP-style) | Lacks IEEE 1149.1 test interface and low-power sleep mode; requires external OE management | Preferred where JTAG is unnecessary and cost sensitivity outweighs testability and power features |
| ISSI IS61WV102432BLL-100TQLI | 1M × 32 organization (32-bit bus), 100 MHz, TQFP-100; no burst counter, no ADV/LD or LBO pins | Fixed 32-bit width, no synchronous burst addressing; uses standard asynchronous OE/R/W control | Selected when system design uses non-burst, wide-data-path architectures and does not require ZBT™ timing |
Compared with IDT71V3557S80BGI8, the Cypress alternative omits JTAG and sleep mode but matches pinout and speed for legacy drop-in replacement, while the ISSI part trades burst capability and 36-bit width for higher density and simpler control-requiring bus-width and timing redesign.
Availability
IDT71V3557S80BGI8 is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and telecom equipment requiring stable component supply, long-term lifecycle support, and industrial-temperature performance.
Supply support for IDT71V3557S80BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
IDT71V3557S80BGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-bus-turnaround applications in high-speed packet processing, cache subsystems, and real-time control systems demanding deterministic latency and burst efficiency.
FAQ
What is the memory organization and total capacity of the IDT71V3557S80BGI8?
The IDT71V3557S80BGI8 is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports 36-bit data paths common in high-end networking and DSP interfaces. It shares pin compatibility with the 256K × 18 variant (IDT71V3559), allowing layout reuse across density options.
Does the IDT71V3557S80BGI8 support burst read and write operations?
Yes, the IDT71V3557S80BGI8 supports synchronous 4-word burst operations for both reads and writes. Burst order (linear or interleaved) is selected via the LBO pin. The internal burst counter advances on ADV/LD = HIGH, enabling efficient sequential access without repeated address bus cycles-critical for packet buffering and streaming applications.
What is the role of the ZZ pin on the IDT71V3557S80BGI8?
The ZZ pin on the IDT71V3557S80BGI8 is a synchronous sleep mode enable. When driven HIGH, it internally gates the clock and reduces power consumption to its lowest level while guaranteeing data retention. This feature is essential for power-sensitive industrial and telecom applications where intermittent operation or standby modes are required.
Is JTAG boundary scan supported on the IDT71V3557S80BGI8?
Yes, the IDT71V3557S80BGI8 includes optional IEEE 1149.1-compliant JTAG boundary scan functionality with dedicated TMS, TDI, TCK, TDO, and TRST pins. TRST is asynchronous and optional; if unused, it may be left floating (internally pulled up). This enables production testing, board-level diagnostics, and in-system verification without requiring additional test fixtures.
What package type and footprint does the IDT71V3557S80BGI8 use?
The IDT71V3557S80BGI8 is supplied in a JEDEC-standard 100-pin thin quad flatpack (TQFP), measuring 14 mm × 20 mm with 0.5 mm lead pitch. Pin 1 is identified by a corner notch. Pins 14, 64, and 66 must connect to VSS per latest die revision, and pin 64 supports the ZZ sleep function-key for PCB layout and thermal design validation.
71V3557S80BGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3557S80BGI8 FAQ
1.How can I place an order for 71V3557S80BGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3557S80BGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of 71V3557S80BGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3557S80BGI8 is usually 5 days.
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6.How does Aetrix verify that 71V3557S80BGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3557S80BGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3557S80BGI8 meets industry standards.
7.What is the process for return or replacement of 71V3557S80BGI8?
All 71V3557S80BGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3557S80BGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3557S80BGI8 part is unused and in its original packaging.
Return procedure for 71V3557S80BGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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