Renesas 71V3557S80PFGI

Overview

71V3557S80PFGI from Integrated Device Technology is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with flow-through outputs, 100 MHz clock speed, 7.5 ns clock-to-data access, and linear/interleaved 4-word burst capability. It serves as high-bandwidth buffer memory in network packet processors and telecom line cards requiring zero bus turnaround between read/write cycles.

For engineers reviewing the 71V3557S80PFGI datasheet, 71V3557S80PFGI pinout, 71V3557S80PFGI application, or 71V3557S80PFGI equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), and JTAG boundary-scan testability for production validation.

Technical Context

The 71V3557S80PFGI implements a synchronous dual-edge-triggered architecture with registered address/control inputs and unregistered (flow-through) data outputs. Its internal burst counter advances on ADV/LD = HIGH, supporting both linear and interleaved sequences selected by the static LBO pin.

Three chip enables (CE1, CE2, CE2) provide flexible depth expansion, while CEN suspends all synchronous operation without affecting output state. The device integrates IEEE 1149.1-compliant JTAG for boundary-scan testing, with optional TRST and dedicated TMS/TDI/TCK/TDO pins.

Key Specifications

Pinout & Package

71V3557S80PFGI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked with dot; top-side marking includes "71V3557S80PFGI" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-100AXC and AS7C33128PFSIG, the 71V3557S80PFGI uniquely delivers ZBT™-optimized zero-turnaround timing, integrated burst sequencing, and IEEE 1149.1 testability - making it the only choice for high-reliability, high-throughput synchronous memory subsystems.

Availability

71V3557S80PFGI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and network equipment requiring stable component supply across extended product lifecycles.

Supply support for 71V3557S80PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing markets.

The 71V3557S80PFGI belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency memory buffering in high-speed packet processing and switching applications where bus efficiency and deterministic timing are mandatory.

FAQ

What is the maximum operating frequency of the 71V3557S80PFGI?

The 71V3557S80PFGI operates at a maximum clock frequency of 100 MHz, corresponding to a 10 ns clock period. This is validated under industrial temperature conditions (–40°C to +85°C) and 3.3 V ±5% supply, with guaranteed 7.5 ns clock-to-data access time for read operations. The device meets this specification using its synchronous flow-through output architecture without pipeline staging.

Does the 71V3557S80PFGI support both linear and interleaved burst modes?

Yes, the 71V3557S80PFGI supports both linear and interleaved 4-word burst sequences. The LBO (Linear/Interleaved Burst Order) pin selects the mode: LBO = LOW enables linear addressing (A0, A0+1, A0+2, A0+3), while LBO = HIGH enables interleaved order (A0, A0+2, A0+1, A0+3). This selection is static and must remain stable during burst execution to prevent address misalignment.

How does the ZBT™ feature improve system performance in the 71V3557S80PFGI?

The ZBT™ (Zero Bus Turnaround) feature in the 71V3557S80PFGI eliminates dead cycles between consecutive read and write operations. Unlike standard synchronous SRAMs that require bus idle time for direction change, the 71V3557S80PFGI allows immediate back-to-back read/write bursts - sustaining full 100 MHz throughput and enabling efficient use of shared data buses in packet processors and switch fabrics.

What is the function of the ZZ pin on the 71V3557S80PFGI?

The ZZ pin on the 71V3557S80PFGI is a synchronous sleep mode input. When asserted HIGH, it gates the internal clock and places the device in its lowest power consumption state while retaining memory contents. Data retention is guaranteed across the full industrial temperature range (–40°C to +85°C), and wake-up occurs synchronously on the next valid clock edge after ZZ returns LOW.

Is JTAG boundary-scan supported on the 71V3557S80PFGI, and what pins are used?

Yes, the 71V3557S80PFGI includes IEEE 1149.1-compliant JTAG boundary-scan functionality. It uses dedicated pins TMS, TDI, TCK, TDO, and optional TRST (active-low asynchronous reset). These signals are routed to the 100-pin TQFP package per the official pinout - TMS (Pin 89), TDI (Pin 88), TCK (Pin 87), TDO (Pin 86), TRST (Pin 85) - enabling full interconnect test coverage without modifying the 71V3557S80PFGI's functional operation.