Renesas 71V3557S85PFG8
- Part No.:
- 71V3557S85PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3557S85PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IDT71V3557S85PFG8 from Integrated Device Technology is a 128K × 36-bit, 4.5 Mbit synchronous ZBT™ SRAM with 3.3V core/I/O supply, 100 MHz operation (7.5 ns clock-to-data access), flow-through outputs, and burst counter for linear/interleaved 4-word sequences - used in high-speed packet buffering and cache coherency logic in telecom switching fabric.
For engineers reviewing the IDT71V3557S85PFG8 datasheet, IDT71V3557S85PFG8 pinout, IDT71V3557S85PFG8 application, or IDT71V3557S85PFG8 equivalent, key selection criteria include ZBT™ zero bus turnaround timing, synchronous byte write enables (BW1–BW4), JTAG boundary scan support, and TQFP-100 packaging with VDDQ/VDD separation for noise isolation.
Technical Context
The IDT71V3557S85PFG8 implements a synchronous dual-edge-triggered address/control register architecture with ADV/LD-driven burst counter and LBO-selectable linear or interleaved addressing. All inputs except OE and TRST are sampled on the rising edge of CLK, with CEN gating internal clock propagation when asserted high.
It features flow-through output path (no output register), asynchronous OE for tri-state control, and integrated JTAG IEEE 1149.1 test interface with TMS/TDI/TCK/TDO/TRST pins. Sleep mode (ZZ) reduces power while retaining data, and individual byte write enables allow granular 9-bit writes within the 36-bit word.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via pin-compatible variant |
| Clock Frequency | 100 MHz maximum - enables 10 ns cycle time for high-throughput memory access |
| Access Time | 7.5 ns clock-to-data - defines minimum latency from CLK rise to valid Q output |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - separate rails reduce switching noise coupling |
| Burst Capability | 4-word burst (linear or interleaved) - reduces address bus traffic by 75% per burst sequence |
| Byte Write Control | BW1–BW4 active-low enables - permits independent 9-bit writes without masking logic |
| JTAG Support | IEEE 1149.1 compliant boundary scan - enables board-level interconnect testing and debug |
Pinout & Package
Package: 100-pin thin quad flatpack (TQFP), JEDEC standard, 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; pins 14, 64, 66 internally pulled to VSS or VDDQ depending on function (ZZ sleep mode supported on pin 64).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; A0–A16 used for 128K×36 configuration |
| CE1, CE2, CE2 | Chip Enables | Three enable signals (CE1/CE2 low-active, CE2 high-active) for depth expansion and deselect control |
| R/W | Read/Write Control | Synchronous single-pin direction control - eliminates separate RD/WR lines |
| ADV/LD | Advance Burst / Load Address | Low = load new external address; High = increment internal burst counter |
| LBO | Linear/Interleaved Burst Order | Static input selecting burst sequence - critical for cache line alignment in CPU interfaces |
| BW1–BW4 | Byte Write Enables | Four active-low enables for 9-bit subword writes - essential for partial-word update efficiency |
| CLK | System Clock Input | Rising-edge-triggered master clock; all synchronous timing referenced to this edge |
| OE | Output Enable | Asynchronous tri-state control - allows dynamic bus sharing without clock synchronization |
| ZZ | Sleep Mode Input | High-active synchronous entry to low-power retention mode (pin 64 on TQFP) |
| TMS/TDI/TCK/TDO/TRST | JTAG Test Interface | Full IEEE 1149.1 boundary scan chain - supports production test and in-system debug |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional flow-through data path - no output register minimizes read latency |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read/write transitions - enables back-to-back memory operations at full clock rate |
| Flow-Through Output Architecture | Removes output register delay - delivers data one clock cycle after address/control setup, reducing read latency |
| 4-Word Burst Counter with LBO Select | Reduces address bus bandwidth by 75% per burst; linear mode suits sequential cache lines, interleaved suits DRAM-like access |
| Individual Byte Write (BW1–BW4) | Enables precise 9-bit updates without read-modify-write - critical for protocol header manipulation and descriptor tables |
| Dual Supply (VDD/VDDQ) | Separates core logic and I/O power domains - suppresses supply noise coupling into sensitive analog timing paths |
| JTAG Boundary Scan (IEEE 1149.1) | Provides structural test coverage for PCB interconnects and package solder joints - required for high-reliability telecom systems |
Applications
| Telecom Packet Buffering | Network Processor Cache |
|---|---|
|
Use Scenario: Line cards in carrier-grade routers buffer variable-length Ethernet/IP packets before classification and forwarding. IC Role / Device Role / Timing Role: High-speed first-in-first-out (FIFO) buffer with ZBT™ turnaround enabling full-duplex ingress/egress streaming at OC-192 rates. Use Value: 100 MHz operation and 7.5 ns access sustain >1.2 Gbps sustained throughput; burst mode aligns with 64-byte cache line transfers. |
Use Scenario: On-chip cache coherency logic in multi-core network processors requires low-latency shared memory for tag/status storage. IC Role / Device Role / Timing Role: Synchronous SRAM acting as directory memory with deterministic 7.5 ns read latency and byte-write granularity. Use Value: BW1–BW4 enables atomic 9-bit status updates without full-word reads; flow-through outputs minimize cache miss penalty. |
| Baseband Signal Processing | Industrial Real-Time Controller |
|
Use Scenario: LTE/5G baseband units store FFT coefficients and channel estimation data during symbol processing bursts. IC Role / Device Role / Timing Role: Burst-mode SRAM providing 4-word coefficient fetch per clock cycle synchronized to DSP pipeline timing. Use Value: Interleaved burst order matches FFT radix-4 memory access pattern; VDDQ/VDD separation prevents RF noise injection into analog front-end. |
Use Scenario: Programmable logic controllers (PLCs) require deterministic memory access for motion control loop buffers and I/O mapping tables. IC Role / Device Role / Timing Role: Deterministic latency SRAM interfaced to FPGA-based control logic with guaranteed 7.5 ns max read timing. Use Value: ZZ sleep mode reduces standby power in unattended operation; industrial temperature range (–40°C to +85°C) ensures field reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C1355KV18 | 256K × 18 organization, same 100 MHz speed, but no JTAG; uses different burst control (BWS# instead of ADV/LD) | Targeted at memory expansion where byte write granularity is less critical than density | Select when system requires higher density per package and JTAG is not needed for test |
| ISSI IS61WV102432BLL | 1M × 32 organization, 167 MHz max, no ZBT™ feature - introduces 1-cycle turnaround penalty between R/W | Suitable for general-purpose buffering where strict zero-turnaround is not required | Choose for cost-sensitive designs needing higher capacity and faster clock, accepting added bus arbitration complexity |
Compared with CY7C1355KV18 and IS61WV102432BLL, the IDT71V3557S85PFG8 uniquely combines ZBT™ timing, JTAG testability, and 128K×36 organization - making it optimal for telecom and network processor designs demanding deterministic latency and production test coverage.
Availability
IDT71V3557S85PFG8 is available at Aetrix Electronics and suitable for telecom infrastructure, network processor design, and industrial real-time control applications requiring stable component supply across extended product lifecycles.
Supply support for IDT71V3557S85PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) was a fabless semiconductor company specializing in timing, memory interface, RF, and sensor signal conditioning ICs before its acquisition by Renesas in 2019.
The IDT71V3557S85PFG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-turnaround memory subsystems in high-speed networking and communications equipment.
FAQ
What is the memory organization and total capacity of the IDT71V3557S85PFG8?
The IDT71V3557S85PFG8 is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). It supports both 128K × 36 and 256K × 18 configurations via pin-compatible variants, with address pins A0–A16 used for the 128K × 36 mode. This organization enables efficient 36-bit wide data transfers common in network processor and DSP interfaces.
Does the IDT71V3557S85PFG8 support JTAG boundary scan, and which pins implement it?
Yes, the IDT71V3557S85PFG8 supports IEEE 1149.1-compliant JTAG boundary scan. The dedicated pins are TMS (Test Mode Select), TDI (Test Data Input), TCK (Test Clock), TDO (Test Data Output), and optional TRST (JTAG Reset). These are assigned to pins U16, U15, U14, U13, and U12 respectively on the 100-pin TQFP package, enabling structural test and debug in production and field environments.
How does the ZBT™ (Zero Bus Turnaround) feature work in the IDT71V3557S85PFG8?
The ZBT™ feature in the IDT71V3557S85PFG8 eliminates idle bus cycles between consecutive read and write operations. By using synchronous control signals (R/W, ADV/LD) and internal pipelining, the device allows immediate transition from a read burst to a write burst - or vice versa - without inserting wait states. This enables sustained 100 MHz throughput in applications like packet buffering where bus efficiency is critical.
What is the role of the ADV/LD and LBO pins in burst operation of the IDT71V3557S85PFG8?
ADV/LD controls burst sequencing: when low, it loads a new external address; when high, it advances the internal burst counter. LBO selects burst order - low for linear (0,1,2,3), high for interleaved (0,2,1,3) - matching memory access patterns of CPUs or DSPs. Both signals are synchronous and must be stable before the rising CLK edge to ensure deterministic burst behavior in the IDT71V3557S85PFG8.
Can the IDT71V3557S85PFG8 operate in low-power mode, and how is it enabled?
Yes, the IDT71V3557S85PFG8 supports synchronous sleep mode via the ZZ pin. When ZZ is driven high, the internal clock is gated and the device enters its lowest power state while retaining memory contents. Data retention is guaranteed across the full industrial temperature range (–40°C to +85°C). Pin 64 on the TQFP package implements ZZ, and it features an internal pulldown resistor for safe default behavior.
71V3557S85PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3557S85PFG8 FAQ
1.How can I place an order for 71V3557S85PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3557S85PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3557S85PFG8 reliable?
The price and inventory of 71V3557S85PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3557S85PFG8 is usually 5 days.
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Once your 71V3557S85PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3557S85PFG8?
For technical support, including 71V3557S85PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3557S85PFG8 requirements.
6.How does Aetrix verify that 71V3557S85PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V3557S85PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3557S85PFG8 meets industry standards.
7.What is the process for return or replacement of 71V3557S85PFG8?
All 71V3557S85PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3557S85PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3557S85PFG8 part is unused and in its original packaging.
Return procedure for 71V3557S85PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3557S85PFG8 Tags

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