Renesas 71V3558S100PFG8

Overview

71V3558S100PFG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 256K × 18-bit organization (4.5 Mbit), 100 MHz clock speed, 3.5 ns clock-to-data access time, zero bus turnaround architecture, and pipelined outputs in a 100-pin TQFP package. It enables high-throughput memory interfacing in network packet buffers and telecom line cards.

For engineers reviewing the 71V3558S100PFG8 datasheet, 71V3558S100PFG8 pinout, 71V3558S100PFG8 application, or 71V3558S100PFG8 equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), three chip enables for depth expansion, JTAG boundary scan capability, and industrial temperature range (–40°C to +85°C) operation.

Technical Context

The 71V3558S100PFG8 implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address loading or incrementing.

It supports 4-word burst sequences (linear or interleaved via LBO pin), asynchronous OE for output tri-state control, and optional IEEE 1149.1 JTAG test interface. The device uses separate 3.3V core (VDD) and I/O (VDDQ) supplies with ±5% tolerance and includes sleep mode (ZZ pin) for low-power retention.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14, 16, and 66 tolerate VIH-level input without direct VDD connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1356BV33-100AXI and AS7C3256B-10JIN, the 71V3558S100PFG8 delivers superior throughput in burst-intensive applications due to its integrated ZBT™ architecture and programmable burst counter-reducing effective memory latency by up to 40% in packet-forwarding workloads.

Availability

71V3558S100PFG8 is available at Aetrix Electronics and suitable for telecom infrastructure, network test equipment, and industrial control systems requiring stable component supply across extended product lifecycles.

Supply support for 71V3558S100PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71V3558S100PFG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency memory interfacing in high-speed packet-switching, baseband processing, and real-time signal acquisition systems.

FAQ

What is the memory organization and total capacity of the 71V3558S100PFG8?

The 71V3558S100PFG8 is configured as 256K × 18-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. This organization supports efficient 18-bit data paths common in telecom DSPs and network processors, and enables straightforward depth expansion using its three chip enable pins (CE1, CE2, CE2). The device does not support width expansion.

Does the 71V3558S100PFG8 support burst mode, and how is it controlled?

Yes, the 71V3558S100PFG8 supports 4-word burst mode via an on-chip counter. Burst behavior is controlled by the ADV/LD pin (low = load new address, high = increment counter) and the LBO pin (low = linear sequence, high = interleaved sequence). The burst order is static and must not change during active operation to prevent address misalignment.

What is the function of the ZZ pin on the 71V3558S100PFG8, and how does it affect power consumption?

The ZZ pin on the 71V3558S100PFG8 is a synchronous sleep mode input. When driven high, it gates the internal clock and reduces dynamic power consumption to its lowest level while guaranteeing data retention. This feature is especially valuable in power-constrained telecom line cards and portable test instrumentation where standby current must be minimized.

How does the ZBTTM feature eliminate dead cycles in the 71V3558S100PFG8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V3558S100PFG8 removes idle cycles between consecutive read and write operations by overlapping bus control transitions internally. Unlike conventional SRAMs that require explicit turnaround time, the 71V3558S100PFG8 uses pipelined registers and burst counter logic to sustain continuous data flow-enabling back-to-back read/write bursts without performance penalty.

Can the 71V3558S100PFG8 operate across industrial temperature ranges, and what are its supply voltage tolerances?

Yes, the 71V3558S100PFG8 is qualified for industrial temperature operation from –40°C to +85°C. Its core supply (VDD) and I/O supply (VDDQ) both accept 3.3 V ±5% (3.135 V to 3.465 V), ensuring robust operation under varying board-level power conditions. This makes it suitable for deployment in uncontrolled environments such as outdoor base stations and factory-floor automation systems.