Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 71V3558S100PFGI8

Part No.:
71V3558S100PFGI8
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V3558S100PFGI8.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,340

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

71V3558S100PFGI8 from IDT (now Renesas) is a 3.3V, 128K × 36-bit (4.5 Mbit) synchronous ZBT™ SRAM with zero bus turnaround, pipelined outputs, and 4-word burst capability. It operates at up to 166 MHz with 3.5 ns clock-to-data access, supports individual byte write control (BW1–BW4), and features an optional IEEE 1149.1 JTAG interface. It is used in high-speed networking line cards and packet buffer applications requiring deterministic read/write switching.

For engineers reviewing the 71V3558S100PFGI8 datasheet, 71V3558S100PFGI8 pinout, 71V3558S100PFGI8 application, or 71V3558S100PFGI8 equivalent, key selection criteria include its ZBT™ architecture eliminating dead cycles between reads/writes, 100-pin TQFP industrial-grade packaging (–40°C to +85°C), synchronous burst counter with LBO-selectable linear/interleaved mode, and support for depth expansion via three chip enables (CE1, CE2, CE2).

Technical Context

The 71V3558S100PFGI8 implements a fully pipelined synchronous interface where address/control signals are registered on the rising edge of CLK, and data transfers occur two cycles later. Its ZBT™ architecture eliminates bus turnaround latency by allowing immediate read-after-write or write-after-read transitions without idle cycles.

It integrates a synchronous burst counter controlled by ADV/LD and LBO, supporting 4-word bursts in either linear or interleaved order. The device uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies, includes asynchronous OE for output tri-state control, and offers optional JTAG boundary scan compliant with IEEE 1149.1 - available only in BGA variants, not in this TQFP package.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit configuration via pin strapping - enables flexible data bus width matching.
Max Clock Frequency 166 MHz; enables 6 ns cycle time for high-throughput buffering in telecom and switch fabric applications.
Clock-to-Data Access 3.5 ns; guarantees deterministic timing for tightly coupled pipeline stages in ASIC/FPGA co-processing systems.
Supply Voltages VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); dual-rail design isolates core logic noise from I/O signaling integrity.
Operating Temperature –40°C to +85°C industrial grade; qualified for deployment in uncontrolled ambient environments like base station cabinets.
Burst Capability 4-word burst (linear or interleaved); reduces address bus overhead and improves effective bandwidth in sequential access patterns.
Byte Write Control Four independent active-low BW1–BW4 pins; allows partial-word writes without read-modify-write, critical for packet header updates.

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V3558S", speed grade, and date code. Industrial temperature grade confirmed.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs Synchronous inputs registering on rising CLK edge; A0–A16 used for 128K×36 mode; A17 unused but must be tied low or high per config.
CE1, CE2, CE2 Chip Enables Three synchronous enables: CE1/CE2 active-low, CE2 active-high; any false enable blocks new operations but completes pending transfers.
R/W Read/Write Control Synchronous signal sampled at rising CLK; determines load-cycle direction; data transfer occurs two cycles later.
ADV/LD Advance Burst / Load Address Low = load external address; high = increment internal burst counter; controls burst sequencing without external address bus toggling.
LBO Linear/Interleaved Burst Order Static input: low = linear burst (0,1,2,3), high = interleaved (0,2,1,3); sets memory access pattern for cache-line or FIFO emulation.
BW1–BW4 Byte Write Enables Active-low per 9-bit byte (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); enables granular writes without full-word masking logic.
I/O0–I/O31, I/OP1–I/OP4 Data I/O Pins 36-bit bidirectional synchronous bus; all inputs/outputs registered on rising CLK; supports concurrent read/write in ZBT™ mode.
CLK System Clock Input Rising-edge-triggered master timing reference; all synchronous registers (address, control, data) align to this edge.
OE Output Enable Asynchronous active-low; forces I/O pins to high-impedance regardless of clock state - simplifies bus arbitration.
CEN Clock Enable Synchronous active-low; gates internal clock propagation when high, preserving register state without external clock gating.
VDD, VDDQ, VSS Power/Ground VDD (core), VDDQ (I/O), and VSS (ground) require local decoupling; VDDQ separation maintains signal integrity for 3.3V I/O swing.
ZZ Sleep Mode Synchronous active-high; internally gates CLK and reduces power to retention level while preserving data - pin 64 in TQFP (VSS/ZZ).

Key Features

Feature Design Value
ZBT™ Zero Bus Turnaround Eliminates dead cycles between consecutive read/write operations - enables 100% bus utilization in burst-intensive packet buffering.
Internally Synchronized OE Removes need for external OE timing control; outputs remain valid across clock boundaries, simplifying system-level timing closure.
4-Word Burst Counter Reduces address bus activity by 75% during sequential accesses; LBO pin selects linear (cache line) or interleaved (DMA-friendly) order.
Individual Byte Write (BW1–BW4) Enables 9-bit granularity writes without read-modify-write cycles - essential for modifying packet headers or metadata in real time.
Three Chip Enables (CE1/CE2/CE2) Supports seamless depth expansion across multiple devices using standard logic; deselect propagates in two cycles with guaranteed tri-state.

Applications

High-Speed Network Line Cards Telecom Packet Buffering

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in OC-192/STM-64 line interface units.

IC Role / Device Role / Timing Role: Primary packet buffer SRAM interfacing directly with SerDes and traffic manager ASICs via synchronous 36-bit bus.

Use Value: ZBT™ architecture enables back-to-back read/write of packet headers and payloads without bus idle time, increasing throughput by ≥15% vs. conventional SSRAM.

Use Scenario: Temporary storage of ATM cells or MPLS labels in edge router forwarding engines.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory for header inspection and rewrite pipelines.

Use Value: 3.5 ns clock-to-data access and pipelined outputs meet sub-10 ns timing budgets required for 10 Gbps+ line rates.

Industrial PLC Data Logging FPGA-Based Protocol Converters

Use Scenario: Cyclic acquisition and timestamped storage of sensor data streams in ruggedized automation controllers.

IC Role / Device Role / Timing Role: High-reliability buffer holding multi-channel analog/digital samples prior to SD card or Ethernet upload.

Use Value: Industrial temperature range (–40°C to +85°C) and sleep mode (ZZ pin) ensure operation in unheated enclosures with power cycling.

Use Scenario: Bridging heterogeneous interfaces (e.g., CAN FD ↔ Ethernet) using FPGA-based protocol translation logic.

IC Role / Device Role / Timing Role: Shared memory resource for dual-port access between FPGA's CAN and Ethernet subsystems.

Use Value: Independent byte write enables selective update of protocol fields without corrupting adjacent payload bytes - critical for safety-critical fieldbus apps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1355KV18-167BZC 256K × 18-bit, 167 MHz, 3.3V, no ZBT™ - uses traditional burst with turnaround cycles. Lacks zero-bus-turnaround; requires additional bus management logic for read/write interleaving. Select when cost sensitivity outweighs latency-critical ZBT™ benefit and 18-bit bus width suffices.
AS7C33128PFSIG 128K × 32-bit, 133 MHz, 3.3V, no burst counter or byte write - asynchronous OE only. No burst capability or BW pins; limited to simple load/store; lower max frequency than 71V3558S100PFGI8. Choose for legacy designs needing drop-in replacement where burst and byte-write features are unused.

Compared with CY7C1355KV18-167BZC and AS7C33128PFSIG, the 71V3558S100PFGI8 delivers superior determinism in mixed read/write workloads due to ZBT™, higher bandwidth via 36-bit bus and 166 MHz operation, and finer-grained data control via four byte-write enables - making it optimal for next-generation packet processing.

Availability

71V3558S100PFGI8 is available at Aetrix Electronics and suitable for high-speed network line cards, telecom packet buffering, industrial PLC data logging, and FPGA-based protocol converters requiring stable component supply across extended product lifecycles.

Supply support for 71V3558S100PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V3558S100PFGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in telecom, networking, and industrial real-time systems where deterministic bus turnaround is critical.

FAQ

What is the memory organization supported by the 71V3558S100PFGI8?

The 71V3558S100PFGI8 supports 128K × 36-bit (4.5 Mbit) configuration as its primary mode. It is pin-compatible with the 256K × 18-bit variant (71V3556S) via address pin strapping - A17 must be held low for 128K×36 operation. This dual-configuration flexibility allows reuse of PCB layouts across memory density requirements without redesign.

Does the 71V3558S100PFGI8 support JTAG boundary scan?

The 71V3558S100PFGI8 does not include JTAG boundary scan functionality. JTAG (TMS, TDI, TCK, TDO, TRST) is only available in the "SA" suffix variants (e.g., 71V3558SA) and only in BGA packages - not in the TQFP package of the 71V3558S100PFGI8. Pin assignments for JTAG signals are NC (no connect) in this part.

How does the ZBT™ feature improve performance in the 71V3558S100PFGI8?

The ZBT™ feature in the 71V3558S100PFGI8 eliminates mandatory idle cycles between read and write operations. Unlike conventional SSRAMs that require bus turnaround time, the 71V3558S100PFGI8 allows immediate transition - e.g., a write at cycle N followed by a read at cycle N+1 - enabling sustained 100% bus utilization in packet-forwarding pipelines.

What is the function of the ADV/LD and LBO pins on the 71V3558S100PFGI8?

On the 71V3558S100PFGI8, ADV/LD is a synchronous control pin: low loads a new external address, high advances the internal burst counter. LBO is a static input selecting burst order - low enables linear (0,1,2,3), high enables interleaved (0,2,1,3). Together they enable efficient 4-word burst access without external address generation logic.

Can the 71V3558S100PFGI8 operate with different supply voltages for core and I/O?

Yes - the 71V3558S100PFGI8 requires separate 3.3 V ±5% supplies: VDD for core logic and VDDQ for I/O drivers. This dual-rail architecture isolates switching noise from sensitive core circuitry and ensures clean 3.3V I/O signaling. Both rails must be powered simultaneously; VDDQ must not exceed VDD by more than 0.3 V per datasheet limits.

71V3558S100PFGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
256K x 18
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V3558S100PFGI8 FAQ

1.How can I place an order for 71V3558S100PFGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3558S100PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3558S100PFGI8 reliable?

The price and inventory of 71V3558S100PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3558S100PFGI8 is usually 5 days.

3.What payment methods are accepted for 71V3558S100PFGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3558S100PFGI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3558S100PFGI8?

71V3558S100PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3558S100PFGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3558S100PFGI8?

For technical support, including 71V3558S100PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3558S100PFGI8 requirements.

6.How does Aetrix verify that 71V3558S100PFGI8 is sourced from the original manufacturer or authorized distributors?

All 71V3558S100PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3558S100PFGI8 meets industry standards.

7.What is the process for return or replacement of 71V3558S100PFGI8?

All 71V3558S100PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3558S100PFGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3558S100PFGI8 part is unused and in its original packaging.

Return procedure for 71V3558S100PFGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

71V3558S100PFGI8 Tags

  • 71V3558S100PFGI8
  • 71V3558S100PFGI8 PDF
  • 71V3558S100PFGI8 Datasheet
  • 71V3558S100PFGI8 Specifications
  • 71V3558S100PFGI8 Images
  • Renesas
  • Renesas 71V3558S100PFGI8
  • Buy 71V3558S100PFGI8
  • 71V3558S100PFGI8 Price
  • 71V3558S100PFGI8 Distributor
  • 71V3558S100PFGI8 Supplier
  • 71V3558S100PFGI8 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER