Renesas 71V3558S133PFG
- Part No.:
- 71V3558S133PFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3558S133PFG.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:2,818
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3558S133PFG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 133 MHz clock speed, 3.5 ns clock-to-data access time, zero bus turnaround architecture, and pipelined outputs in a 100-pin TQFP package. It serves as high-speed buffer/cache memory in network packet processors and telecom line cards requiring deterministic read/write interleaving without dead cycles.
For engineers reviewing the 71V3558S133PFG datasheet, 71V3558S133PFG pinout, 71V3558S133PFG application, or 71V3558S133PFG equivalent, key selection criteria include ZBT™ burst timing compliance, 4-word linear/interleaved burst mode support, individual byte write control (BW1–BW4), three-chip-enable depth expansion capability, and industrial temperature range (–40°C to +85°C) operation.
Technical Context
The 71V3558S133PFG implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV/LD = HIGH, enabling four-cycle data transfers per address load, with sequence order selected by static LBO pin (linear or interleaved).
It features internally synchronized output buffer enable (eliminating OE timing constraints), clock enable (CEN) for full pipeline suspension, and asynchronous OE for output tri-state control. The device supports 3.3V core (VDD) and I/O (VDDQ) supplies with ±5% tolerance and includes optional IEEE 1149.1 JTAG boundary scan (SA variant only).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via pin-compatible variant but not this exact part number. |
| Clock Frequency | 133 MHz maximum; enables 7.5 ns cycle time for sustained burst throughput in high-speed bus systems. |
| Access Time | 3.5 ns clock-to-data (tCD); guarantees deterministic output valid window for synchronous system timing closure. |
| Burst Capability | 4-word burst (linear or interleaved); reduces address bus traffic and improves bandwidth efficiency in cache-line fetches. |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; requires separate core and I/O rail regulation for noise isolation. |
| Operating Temperature | –40°C to +85°C industrial grade; validated for deployment in base station and industrial control environments. |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard); compatible with standard reflow and automated optical inspection. |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V3558S133PFG" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; A0–A16 used for 128K × 36 configuration; A17 reserved/not connected. |
| CLK | System Clock Input | Positive-edge-triggered master clock; all synchronous registers (address, control, data) latch on rising edge. |
| R/W | Read/Write Control | Synchronous signal defining cycle type; sampled with ADV/LD low to initiate load read/write; ignored during burst advance. |
| ADV/LD | Burst Counter Control | Load new external address (LOW) or increment internal burst counter (HIGH); determines burst sequencing behavior. |
| BW1–BW4 | Byte Write Enables | Active-low synchronous controls for 9-bit bytes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); enables partial-word writes without masking logic. |
| CE1, CE2, CE2 | Chip Enable Inputs | Three independent enables (CE1/CE2 active-low, CE2 active-high); any false condition initiates two-cycle deselect with automatic bus tri-state. |
| OE | Output Enable | Asynchronous active-low control; allows real-time output disable without affecting internal pipeline state. |
| LBO | Burst Order Select | Static input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) burst address sequence; must remain stable during operation. |
| ZZ | Sleep Mode Input | Active-high synchronous entry into low-power sleep; gates internal clock and maintains data retention at minimal current draw. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; all bits registered on CLK rising edge; supports full- or byte-write operations. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive reads and writes; enables back-to-back memory transactions at full clock rate. |
| Internally Synchronized OE | Removes timing dependency on OE relative to CLK; simplifies PCB layout and eliminates need for OE skew compensation. |
| Four-Word Burst Mode | Single address load yields four sequential data words; reduces address bus utilization by 75% in cache-line applications. |
| Individual Byte Write Control | Four independent BWx pins allow selective 9-bit writes; avoids read-modify-write overhead in partial updates. |
| Three-Chip-Enable Architecture | Supports seamless depth expansion across multiple devices using CE1/CE2/CE2 logic; enables scalable memory subsystems. |
Applications
| Packet Buffering in Switch ASICs | Line Card Cache Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly with switch fabric controller via synchronous parallel bus. Use Value: ZBT™ architecture enables uninterrupted header processing during simultaneous packet enqueue/dequeue, sustaining 133 MHz throughput without arbitration stalls. | Use Scenario: Serving as instruction/data cache for DSP-based signal processing in 4G/5G radio line cards. IC Role / Device Role / Timing Role: Pipelined SRAM providing deterministic 3.5 ns access to cached firmware and filter coefficients for real-time FFT and modulation routines. Use Value: 4-word burst mode delivers full cache-line fetch in one address cycle, reducing memory controller overhead and improving MAC-layer latency. |
| Telecom Backplane Interface | Industrial PLC Data Logging Buffer |
Use Scenario: Buffering protocol translation data between legacy TDM and modern packet-based backplane interfaces. IC Role / Device Role / Timing Role: Dual-port-like behavior achieved via ZBT™ read-after-write capability, supporting concurrent upstream/downstream frame assembly. Use Value: Elimination of bus turnaround delay ensures precise timing alignment between SONET/SDH framing and IP encapsulation engines. | Use Scenario: Capturing high-speed sensor telemetry streams in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM acting as volatile ring buffer for time-stamped analog/digital I/O snapshots prior to non-volatile storage. Use Value: –40°C to +85°C rating and ZZ sleep mode enable reliable operation during thermal cycling and power-loss recovery sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV133BXC | 128K × 36, 133 MHz, 3.3V, but uses QDR-II architecture with separate read/write ports and no ZBT™ zero-turnaround guarantee. | Requires dual-port interface logic and lacks burst counter; better suited for true simultaneous R/W workloads than ZBT™-optimized pipelines. | Select when true concurrent read/write bandwidth outweighs deterministic turnaround timing. |
| AS7C33128PFSIG | 128K × 36, 133 MHz, 3.3V, but asynchronous OE and no JTAG; lacks ADV/LD burst control and ZZ sleep mode. | Lower cost but limited to basic synchronous operation; no burst sequencing or industrial temp validation. | Select for cost-sensitive commercial designs where ZBT™ and sleep features are unnecessary. |
Compared with CY7C1356BV133BXC and AS7C33128PFSIG, the 71V3558S133PFG uniquely delivers guaranteed zero bus turnaround, integrated burst counter with LBO-selectable sequencing, and industrial-grade sleep mode - making it optimal for telecom and embedded systems demanding strict timing predictability and power-aware operation.
Availability
71V3558S133PFG is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and network test equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for 71V3558S133PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.
The 71V3558S133PFG belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet processing, switching, and baseband subsystems where deterministic memory access timing is critical.
FAQ
What is the maximum supported clock frequency for the 71V3558S133PFG?
The 71V3558S133PFG is rated for a maximum clock frequency of 133 MHz, corresponding to a 7.5 ns clock period. This specification is validated across the full industrial temperature range (–40°C to +85°C) and under worst-case voltage conditions (VDD/VDDQ = 3.135 V). Operation beyond 133 MHz is not guaranteed and may violate setup/hold timing margins.
Does the 71V3558S133PFG support both linear and interleaved burst modes?
Yes, the 71V3558S133PFG supports both linear and interleaved 4-word burst sequences, selected by the static LBO pin: LBO = LOW configures linear order (A0, A0+1, A0+2, A0+3), while LBO = HIGH selects interleaved order (A0, A0+2, A0+1, A0+3). The LBO state must be stable before and during burst operation.
How does the ZBT™ feature eliminate dead cycles in the 71V3558S133PFG?
The ZBT™ feature in the 71V3558S133PFG removes bus turnaround delays by allowing immediate transition from write to read (or read to write) without idle cycles. This is achieved through internal pipeline staging and synchronized control logic that overlaps address latching and data transfer phases, ensuring continuous bus utilization at full clock rate.
Can the 71V3558S133PFG operate with different voltages on VDD and VDDQ?
Yes, the 71V3558S133PFG supports independent 3.3 V ±5% supplies: VDD powers the core logic and address/control registers, while VDDQ powers the I/O buffers and data path. This separation allows noise isolation between logic and I/O domains and supports mixed-voltage system integration, provided both rails ramp monotonically and stay within specified tolerances.
Is JTAG boundary scan available on the 71V3558S133PFG?
No, JTAG boundary scan (IEEE 1149.1) is only available on the "SA" variant (e.g., 71V3558SA), not on the "S" version like the 71V3558S133PFG. The 71V3558S133PFG omits TMS, TDI, TCK, TDO, and TRST pins; these are marked NC in its pinout and are not functional.
71V3558S133PFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3558S133PFG FAQ
1.How can I place an order for 71V3558S133PFG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3558S133PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3558S133PFG reliable?
The price and inventory of 71V3558S133PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3558S133PFG is usually 5 days.
3.What payment methods are accepted for 71V3558S133PFG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3558S133PFG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3558S133PFG?
71V3558S133PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3558S133PFG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3558S133PFG?
For technical support, including 71V3558S133PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3558S133PFG requirements.
6.How does Aetrix verify that 71V3558S133PFG is sourced from the original manufacturer or authorized distributors?
All 71V3558S133PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3558S133PFG meets industry standards.
7.What is the process for return or replacement of 71V3558S133PFG?
All 71V3558S133PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3558S133PFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3558S133PFG part is unused and in its original packaging.
Return procedure for 71V3558S133PFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3558S133PFG Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

