Renesas 71V3558S133PFG8

Overview

71V3558S133PFG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), supporting 133 MHz operation (7.5 ns clock-to-data access), zero bus turnaround, pipelined outputs, and 4-word burst capability. It serves as high-speed buffer/cache in network packet processors and telecom line cards requiring deterministic latency and no dead cycles between read/write transitions.

For engineers reviewing the 71V3558S133PFG8 datasheet, 71V3558S133PFG8 pinout, 71V3558S133PFG8 application, or 71V3558S133PFG8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O interface, industrial temperature support (–40°C to +85°C), and JTAG boundary scan availability in SA variants - all confirmed for this specific speed-grade and package variant.

Technical Context

The 71V3558S133PFG8 implements a fully synchronous, rising-edge-triggered architecture with registered address, control, and data paths. Its ZBT™ feature eliminates bus turnaround overhead by enabling immediate read-after-write or write-after-read transitions without wait states.

It integrates an on-chip 4-word burst counter (linear or interleaved via LBO pin), individual byte write enables (BW1–BW4), three chip enables (CE1, CE2, CE2) for depth expansion, and optional IEEE 1149.1 JTAG boundary scan - all synchronized to CLK, with only OE asynchronous.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free (Pb-free) and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1356BV18-133AXC and AS7C33128PFSI-133BIN, the 71V3558S133PFG8 uniquely delivers 128K × 36-bit density with ZBT™, full parity support, and industrial temperature range in a single TQFP-100 device - making it optimal for high-integrity, high-throughput embedded buffering where bus efficiency and data integrity are non-negotiable.

Availability

71V3558S133PFG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, industrial PLC data logging, and ATE pattern memory applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial-temperature performance.

Supply support for 71V3558S133PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V3558S series belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet processing, telecom infrastructure, and real-time control systems demanding deterministic timing and burst efficiency.

FAQ

What is the memory organization and total capacity of the 71V3558S133PFG8?

The 71V3558S133PFG8 is configured as 128K × 36-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. This includes 32 data bits (I/O0–I/O31) and 4 parity bits (I/OP1–I/OP4), supporting error detection in mission-critical buffering applications. The device operates exclusively in x36 mode - not x18 - and does not support configuration switching.

Does the 71V3558S133PFG8 support JTAG boundary scan?

The 71V3558S133PFG8 does not include JTAG boundary scan; that feature is exclusive to the "SA" suffix variants (e.g., 71V3558SA). This "S" version omits TMS, TDI, TCK, TDO, and TRST pins - confirmed by pin configurations in PKG100, BG119, and BQ165 packages. For IEEE 1149.1 compliance, select the SA variant instead of the 71V3558S133PFG8.

What is the function of the ZZ pin on the 71V3558S133PFG8, and how is it used?

The ZZ pin on the 71V3558S133PFG8 is a synchronous sleep mode input. When driven HIGH, it internally gates the CLK signal and places the device in its lowest-power state while guaranteeing data retention. It has an internal pulldown resistor, so it defaults to inactive (normal operation) when left unconnected. Sleep mode reduces active power consumption significantly and is ideal for intermittent data capture or standby states in industrial controllers.

How does the ZBTTM feature improve system performance in the 71V3558S133PFG8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V3558S133PFG8 eliminates mandatory idle cycles between consecutive read and write operations. Unlike conventional SRAMs requiring bus turnaround time, the 71V3558S133PFG8 permits immediate transition - e.g., a write cycle at clock n can be followed directly by a read cycle at clock n+1 - sustaining >95% bus utilization in burst-heavy workloads like packet forwarding engines.

What are the valid operating voltage ranges for VDD and VDDQ on the 71V3558S133PFG8?

The 71V3558S133PFG8 requires VDD (core supply) and VDDQ (I/O supply) both at 3.3 V ±5%, i.e., 3.135 V to 3.465 V. These rails must be independently decoupled and may be supplied from separate regulators. Operation outside this range risks timing violations, data corruption, or permanent damage - especially if VDDQ exceeds VDD +0.3 V or falls below VDD −0.3 V, as specified in the DC operating conditions table.