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Renesas 71V3558S133PFGI8
- Part No.:
- 71V3558S133PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3558S133PFGI8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:3,800
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Product details
Overview
71V3558S133PFGI8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 133 MHz clock speed, 3.5 ns clock-to-data access time, zero bus turnaround architecture, and pipelined outputs. It serves as a high-bandwidth buffer in network packet processors and telecom line cards where rapid read/write alternation is critical.
For engineers reviewing the 71V3558S133PFGI8 datasheet, 71V3558S133PFGI8 pinout, 71V3558S133PFGI8 application, or 71V3558S133PFGI8 equivalent, key selection factors include its ZBT™ burst capability, 4-word interleaved/linear burst mode, individual byte write control (BW1–BW4), triple chip enable for depth expansion, and industrial temperature support (–40°C to +85°C).
Technical Context
The 71V3558S133PFGI8 implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV/LD = HIGH, while LBO selects linear or interleaved addressing sequences - both wrapping after four words.
ZBT™ operation eliminates dead cycles between consecutive reads and writes by decoupling bus direction control from OE; output enable is asynchronous but internally synchronized via pipelined registers, and CEN suspends all synchronous logic without affecting output state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via pin-compatible variant |
| Clock Frequency | 133 MHz maximum; enables 7.5 ns cycle time for sustained burst throughput |
| Access Time | 3.5 ns clock-to-data (tCD); guarantees deterministic read latency for pipeline-aligned systems |
| Burst Mode | 4-word linear or interleaved burst; reduces address setup overhead per transfer |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails minimize noise coupling |
| Operating Temperature | –40°C to +85°C industrial grade; validated for base station and industrial control environments |
| Package | 100-pin TQFP (14 mm × 20 mm); JEDEC-compliant, lead-free, RoHS-compliant |
Pinout & Package
71V3558S133PFGI8 is packaged in a 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14, 16, and 66 tolerate VIH-level voltage without direct VDD connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Positive-edge-triggered master timing reference for all synchronous registers |
| A0–A16 | Address inputs | 17-bit address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled |
| R/W | Read/write control | Synchronous signal defining load-cycle operation type; determines data flow direction two cycles later |
| ADV/LD | Advance/load control | Loads new external address (LOW) or increments internal burst counter (HIGH) |
| LBO | Burst order select | Static input selecting linear (LOW) or interleaved (HIGH) 4-word burst sequence |
| BW1–BW4 | Byte write enables | Four independent active-low signals controlling 9-bit byte writes; all may be tied LOW for full-word writes |
| CE1, CE2, CE2 | Chip enables | Three synchronous enables (CE1/CE2 active LOW, CE2 active HIGH) enabling depth expansion and hierarchical deselect |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus with registered input/output paths; supports concurrent read/write in ZBT™ mode |
| OE | Output enable | Asynchronous control; tri-states outputs immediately when HIGH, eliminating need for precise timing coordination |
| ZZ | Sleep mode | Synchronous HIGH input gating internal clock and reducing power to retention level; data preserved |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates idle cycles between read and write operations, enabling continuous bus utilization in packet buffering |
| Pipelined Output Buffer Enable | Internally synchronizes OE, removing external timing constraints and simplifying interface design |
| 4-Word Burst Counter | Reduces address bus traffic by 75% during sequential accesses; LBO pin configures linear/interleaved order |
| Individual Byte Write Control | Enables selective 9-bit updates without disturbing adjacent bytes-critical for header modification in networking |
| Triple Chip Enable Architecture | Supports seamless memory depth expansion using CE1/CE2/CE2 logic without external decode logic |
Applications
| High-Speed Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in switching ASICs with strict latency budgets. IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM acting as first-level packet buffer with ZBT™-enabled back-to-back read/write. Use Value: 3.5 ns tCD and zero bus turnaround reduce packet queuing delay by up to 40% versus standard sync SRAMs. | Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line cards requiring deterministic burst transfers. IC Role / Device Role / Timing Role: Synchronous burst memory interfacing directly with SerDes and framer ICs at 133 MHz. Use Value: 4-word interleaved burst mode matches SONET frame alignment, minimizing address setup overhead per cell. |
| Industrial PLC Data Logging | Medical Imaging Frame Store |
Use Scenario: Real-time logging of sensor data streams in programmable logic controllers operating across –40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing non-interruptible data capture with sleep mode (ZZ) for power cycling. Use Value: Guaranteed data retention in ZZ mode and extended temperature rating ensure reliability in uncontrolled cabinet environments. | Use Scenario: Temporary storage of uncompressed DICOM image frames (e.g., 1024×1024×16-bit) during CT/MRI acquisition. IC Role / Device Role / Timing Role: High-bandwidth frame buffer supporting parallel pixel readout and DMA-based transfer to host processor. Use Value: Pipelined outputs and 133 MHz clock enable >500 MB/s sustained bandwidth for real-time image streaming. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-133AXC | 256K × 18-bit organization; same 133 MHz speed, but different pinout and burst control scheme | Requires PCB redesign due to different address/data mapping and no LBO pin; lacks ZZ sleep mode | Choose when 18-bit bus width suffices and JTAG test support is not required |
| AS7C3256A-133JCIN | Commercial-grade (0°C to +70°C); no industrial temp option; no ZBT™ or burst counter; asynchronous OE only | Not suitable for telecom or industrial use; limited to cost-sensitive embedded control with relaxed timing | Consider only for non-critical applications where ZBT™ and temperature range are unnecessary |
Compared with CY7C1356BV18-133AXC and AS7C3256A-133JCIN, the 71V3558S133PFGI8 uniquely delivers ZBT™-enabled zero-cycle turnaround, industrial temperature operation, and configurable 4-word burst - making it irreplaceable in high-reliability, high-throughput packet processing systems.
Availability
71V3558S133PFGI8 is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3558S133PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V3558S133PFGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed networking and telecom infrastructure equipment.
FAQ
What is the memory organization and density of the 71V3558S133PFGI8?
The 71V3558S133PFGI8 is configured as 128K × 36-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. It supports pin-compatible 256K × 18-bit operation in the same family, but the 71V3558S133PFGI8 itself is fixed at the 128K × 36-bit configuration per its datasheet specification and pinout.
Does the 71V3558S133PFGI8 support JTAG boundary scan?
No, the 71V3558S133PFGI8 does not include JTAG boundary scan. That feature is exclusive to the "SA" suffix variants (e.g., 71V3558SA). The "S" version - including 71V3558S133PFGI8 - omits TMS, TDI, TCK, TDO, and TRST pins, as confirmed by its 100-pin TQFP pin configuration diagrams and functional block descriptions.
How does the ZBTTM feature eliminate dead cycles in the 71V3558S133PFGI8?
The ZBTTM feature in the 71V3558S133PFGI8 removes bus turnaround delays by decoupling read/write direction control from output enable. Unlike conventional SRAMs requiring OE deassertion before changing R/W state, the 71V3558S133PFGI8 uses internally synchronized OE and pipelined registers to allow immediate back-to-back read-after-write or write-after-read operations - verified in its synchronous truth table and timing diagrams.
What is the function of the ZZ pin on the 71V3558S133PFGI8?
The ZZ pin on the 71V3558S133PFGI8 is a synchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces power consumption to the minimum retention level while preserving stored data. This functionality is confirmed in the pin description table and supported on the latest die revision, where pin 64 (VSS/ZZ) serves dual-purpose grounding or sleep control.
Can the 71V3558S133PFGI8 operate with mixed voltage supplies for core and I/O?
Yes - the 71V3558S133PFGI8 uses separate supply rails: VDD (3.3 V ±5%) powers the core logic, and VDDQ (3.3 V ±5%) powers the I/O buffers. This separation minimizes noise coupling between logic and data paths and is explicitly defined in the Recommended DC Operating Conditions table, ensuring robust signal integrity in high-speed designs.
71V3558S133PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3558S133PFGI8 FAQ
1.How can I place an order for 71V3558S133PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3558S133PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3558S133PFGI8 reliable?
The price and inventory of 71V3558S133PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3558S133PFGI8 is usually 5 days.
3.What payment methods are accepted for 71V3558S133PFGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3558S133PFGI8 transactions.
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4.How is shipping managed for 71V3558S133PFGI8?
71V3558S133PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3558S133PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3558S133PFGI8?
For technical support, including 71V3558S133PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3558S133PFGI8 requirements.
6.How does Aetrix verify that 71V3558S133PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3558S133PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3558S133PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V3558S133PFGI8?
All 71V3558S133PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3558S133PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3558S133PFGI8 part is unused and in its original packaging.
Return procedure for 71V3558S133PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3558S133PFGI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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