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Renesas 71V3558S166PFG8

Part No.:
71V3558S166PFG8
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V3558S166PFG8.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,862

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Product details

Overview

71V3558S166PFG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization, 166 MHz clock speed, 3.5 ns clock-to-data access, zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and individual byte write control (BW1–BW4), deployed in high-throughput packet buffering and network switch fabric applications.

For engineers reviewing the 71V3558S166PFG8 datasheet, 71V3558S166PFG8 pinout, 71V3558S166PFG8 application, or 71V3558S166PFG8 equivalent, key selection criteria include ZBT™ dead-cycle elimination, 100-pin TQFP package compatibility, industrial temperature support (–40°C to +85°C), and JTAG boundary-scan capability in SA variants - all critical for telecom infrastructure and real-time embedded memory subsystems.

Technical Context

The 71V3558S166PFG8 implements a fully synchronous, positive-edge-triggered register pipeline for address, control, and data I/O signals, with two-cycle latency between address/control registration and data transfer. Its ZBT™ architecture eliminates bus turnaround dead cycles by enabling immediate read-after-write or write-after-read transitions without OE control overhead.

It integrates an on-chip burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved 4-word burst sequences. The device features three chip enables (CE1, CE2, CE2) with two-cycle deselect timing, asynchronous OE for output tri-state control, and optional IEEE 1149.1 JTAG boundary scan (available in SA versions only).

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization128K × 36-bit (4.5 Mbit); supports depth expansion via CE pins
Max Clock Frequency166 MHz; enables 6.0 ns cycle time for sustained high-bandwidth data streaming
Clock-to-Data Access3.5 ns; defines minimum latency from CLK edge to valid Q output in read cycles
Supply VoltageVDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails reduce noise coupling
Burst Capability4-word linear or interleaved burst; reduces address bus traffic by 75% per burst sequence
Operating Temperature–40°C to +85°C; qualified for industrial-grade reliability in base station and router environments
Package100-pin TQFP (14 mm × 20 mm); JEDEC-compliant footprint with thermal pad option

Pinout & Package

71V3558S166PFG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with exposed thermal pad (PFG suffix). Pinout validated per IDT document 5281 drw 02 (128K×36 configuration).

Pin/TerminalCircuit RoleDesign Meaning
CLKClock inputPositive-edge-triggered master timing reference; all synchronous registers latch on rising edge
A0–A16Address inputs17-bit address bus for 128K-word addressing; registered on rising CLK with ADV/LD low
R/WRead/write controlSynchronous signal defining load-cycle operation type; determines data direction two cycles later
ADV/LDBurst advance / address loadControls burst counter increment (HIGH) or external address latching (LOW); critical for burst sequencing
BW1–BW4Byte write enablesFour independent active-low enables for 9-bit bytes; allows partial-word writes without masking logic
CE1, CE2, CE2Chip enablesThree-input enable group; CE1/CE2 low + CE2 high selects device; any violation initiates two-cycle deselect
I/O0–I/O31, I/OP1–I/OP4Data I/O36-bit bidirectional bus with registered input/output paths; supports concurrent read/write in ZBT™ mode
OEOutput enableAsynchronous active-low control; tri-states outputs independently of clock for bus sharing
LBOBurst order selectStatic input selecting linear (LOW) or interleaved (HIGH) burst sequence; must remain stable during operation
ZZSleep modeActive-high synchronous input gating internal clock; retains data while minimizing power in idle states

Key Features

FeatureDesign Value
ZBTTM Zero Bus TurnaroundEliminates dead cycles between consecutive read/write operations, enabling continuous 166 MHz bus utilization without OE management
Pipelined Address/Data RegistersTwo-stage synchronous pipeline ensures deterministic 2-clock-cycle latency from address load to data transfer
Individual Byte Write ControlBW1–BW4 allow selective 9-bit byte updates within a 36-bit word, reducing bus contention and write amplification
On-Chip Burst CounterHardware counter driven by ADV/LD and LBO generates 4-word burst addresses internally-no external sequencer required
Three Chip Enables with Depth ExpansionCE1/CE2/CE2 logic enables seamless memory bank expansion up to 8× depth without external decoding

Applications

Packet Buffering in Network SwitchesReal-Time Signal Processing Buffers

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches with line-rate throughput.

IC Role / Device Role / Timing Role: High-speed, low-latency shared memory buffer interfacing directly with MAC and switching fabric logic.

Use Value: 166 MHz clock rate and ZBT™ architecture sustain full-duplex 10 Gbps+ data flow with zero turnaround penalty between frame reads and writes.

Use Scenario: Temporary storage of FFT coefficients, filter taps, or sensor samples in radar or medical imaging systems.

IC Role / Device Role / Timing Role: Synchronous dual-port-like buffer providing deterministic 3.5 ns read access and burst-aligned writes.

Use Value: Pipelined outputs and 4-word burst mode reduce CPU/DSP memory transaction overhead by 75%, accelerating real-time processing loops.

Telecom Baseband ProcessingIndustrial PLC Data Logging

Use Scenario: Holding channelized TDM data streams and protocol stack buffers in 4G/5G remote radio units.

IC Role / Device Role / Timing Role: Deterministic-access SRAM acting as interface between DSP cores and framer/FEC hardware.

Use Value: Industrial temperature range (–40°C to +85°C) and 3.3V I/O compatibility ensure reliable operation in uncontrolled outdoor enclosures.

Use Scenario: Cyclic buffering of sensor telemetry, motion control commands, and event logs in factory automation controllers.

IC Role / Device Role / Timing Role: Nonvolatile-retentive memory buffer (with external backup) for high-integrity data capture during power transitions.

Use Value: ZZ sleep mode reduces standby current to <100 µA while guaranteeing data retention-extending battery-backed uptime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1356BV18-167BZC256K × 18-bit organization, 167 MHz, same 100-pin TQFP, but no ZBT™ or burst counterRequires external burst logic and suffers bus turnaround delays; suited for simpler sequential access patternsSelect when word-width flexibility (18-bit) and marginally higher speed outweigh ZBT™ benefits
AS7C3256A-15JIN32K × 8-bit async SRAM, 15 ns access, 32-pin SOIC; no clock, burst, or ZBT™ featuresOnly suitable for low-speed control-plane buffering where deterministic latency is non-criticalChoose only for cost-sensitive, non-real-time applications with minimal bandwidth requirements

Compared with CY7C1356BV18-167BZC and AS7C3256A-15JIN, the 71V3558S166PFG8 delivers unique ZBT™ dead-cycle elimination and integrated burst counter-enabling true zero-gap memory transactions essential for packet-switched and real-time signal processing workloads.

Availability

71V3558S166PFG8 is available at Aetrix Electronics and suitable for network switch fabric design, telecom baseband processing, real-time signal buffering, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for 71V3558S166PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V3558S166PFG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in packet-forwarding engines, switch fabrics, and real-time DSP buffers where bus efficiency and deterministic timing are critical.

FAQ

What is the memory organization and density of the 71V3558S166PFG8?

The 71V3558S166PFG8 is configured as 128K × 36-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. This organization supports 36-bit data paths common in network processors and DSP interfaces, and enables depth expansion using its three chip enable pins (CE1, CE2, CE2) without external decoding logic.

Does the 71V3558S166PFG8 support burst read and write operations?

Yes, the 71V3558S166PFG8 supports 4-word burst operations in both linear and interleaved sequences, controlled by the LBO pin and advanced via the ADV/LD signal. Burst mode reduces address bus activity by 75% per transaction and is fully supported for both reads and writes, with data appearing two clock cycles after the initial address load.

What is the role of the ZZ pin on the 71V3558S166PFG8?

The ZZ pin on the 71V3558S166PFG8 is a synchronous sleep mode input. When asserted HIGH, it gates the internal clock and places the device into its lowest-power state while guaranteeing data retention. This feature is essential for power-constrained telecom and industrial applications requiring rapid wake-up with no data loss.

Is JTAG boundary scan available on the 71V3558S166PFG8?

JTAG boundary scan (IEEE 1149.1) is not available on the standard "S" version of the 71V3558S166PFG8. It is only implemented in the "SA" variant (e.g., 71V3558SA), which includes dedicated TMS, TDI, TCK, TDO, and optional TRST pins. The 71V3558S166PFG8 uses NC pins in those locations per its 100-pin TQFP pinout.

What are the voltage and temperature specifications for the 71V3558S166PFG8?

The 71V3558S166PFG8 operates with VDD and VDDQ at 3.3 V ±5%, and is rated for industrial temperature range (–40°C to +85°C). Absolute maximum ratings specify terminal voltages up to VDD +0.5 V for I/O pins and –0.5 V to +4.6 V for other terminals, ensuring robustness in noisy industrial environments.

71V3558S166PFG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
256K x 18
Memory Interface:
Parallel
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V3558S166PFG8 FAQ

1.How can I place an order for 71V3558S166PFG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3558S166PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3558S166PFG8 reliable?

The price and inventory of 71V3558S166PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3558S166PFG8 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3558S166PFG8 transactions.

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71V3558S166PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3558S166PFG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3558S166PFG8?

For technical support, including 71V3558S166PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3558S166PFG8 requirements.

6.How does Aetrix verify that 71V3558S166PFG8 is sourced from the original manufacturer or authorized distributors?

All 71V3558S166PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3558S166PFG8 meets industry standards.

7.What is the process for return or replacement of 71V3558S166PFG8?

All 71V3558S166PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3558S166PFG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3558S166PFG8 part is unused and in its original packaging.

Return procedure for 71V3558S166PFG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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