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Renesas 71V3558S166PFGI

Name: 71V3558S166PFGI
Brand: Renesas
SKU: 71V3558S166PFGI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V3558S166PFGI

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V3558S166PFGI.pdf

Description:: IC SRAM 4.5MBIT PARALLEL 100TQFP

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Product details

Overview

71V3558S166PFGI from Renesas is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit (4.5 Mbit) organization, 166 MHz operation (3.5 ns clock-to-data access), zero bus turnaround architecture, pipelined outputs, and 4-word burst capability. It supports industrial temperature range (–40°C to +85°C) and is packaged in a 100-pin TQFP (PFGI suffix). This device serves as a high-bandwidth buffer or cache in network packet processors and telecom line cards.

For engineers reviewing the 71V3558S166PFGI datasheet, 71V3558S166PFGI pinout, 71V3558S166PFGI application, or 71V3558S166PFGI equivalent, key selection criteria include ZBT™ bus turnaround elimination, synchronous 3.3V I/O compliance, burst counter support, JTAG testability (optional), and TQFP-100 mechanical compatibility for legacy board reuse.

Technical Context

The 71V3558S166PFGI implements a fully pipelined synchronous interface with positive-edge-triggered address, data, and control registers. Its ZBT™ architecture eliminates dead cycles between read and write operations by decoupling bus direction control from timing-critical sequencing.

It integrates an on-chip 4-word burst counter with linear/interleaved mode selectable via LBO, individual byte write enables (BW1–BW4), three chip enables (CE1, CE2, CE2) for depth expansion, and optional IEEE 1149.1 JTAG boundary scan-available only in BGA variants, not the PFGI TQFP package.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via pin-compatible variant but not this exact part.
Max Clock Frequency	166 MHz; enables 3.5 ns clock-to-data access time for real-time packet buffering in high-speed switch fabrics.
Supply Voltage	3.3 V ±5% (VDD core) and 3.3 V ±5% (VDDQ I/O); requires separate low-noise regulation for core and I/O rails.
Burst Capability	4-word burst (linear or interleaved); reduces address bus traffic and improves throughput in sequential memory access patterns.
Operating Temperature	–40°C to +85°C industrial grade; qualified for deployment in uncontrolled ambient telecom and industrial control enclosures.
Package	100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body; RoHS-compliant green packaging per ordering info.
Input Capacitance	5 pF (max) at input pins; ensures signal integrity with standard 50 Ω PCB trace impedance and minimal loading on driving logic.

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 marked by corner notch; top-view orientation per datasheet drawing 5281 drw 02.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	Synchronous inputs; 18-bit address bus supporting 256K × 18 configuration - A16/A17 are NC in 128K × 36 mode per PKG100 pinout.
CLK	System Clock Input	Rising-edge-triggered master clock; all synchronous registers (address, control, I/O) align to this edge; no internal clock division.
R/W	Read/Write Control	Synchronous active-high signal defining cycle type; sampled with ADV/LD low to initiate load operation two cycles later.
ADV/LD	Address Load / Burst Advance	Synchronous control: low = load external address; high = increment internal burst counter; determines burst sequence start point.
BW1–BW4	Byte Write Enables	Active-low synchronous controls for four 9-bit bytes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); enable partial writes without masking logic.
CE1, CE2, CE2	Chip Enables	Three independent enables: CE1/CE2 active-low, CE2 active-high; any false condition initiates 2-cycle deselect with tri-state I/O after delay.
I/O0–I/O31, I/OP1–I/OP4	Data I/O Bus	36-bit bidirectional synchronous bus; registered input and output paths; supports full-word or byte-level reads/writes.
OE	Output Enable	Asynchronous active-low; disables outputs to high-Z regardless of clock state; may be tied low for simplified read-only use.
LBO	Burst Order Select	Static input: low = linear burst (0,1,2,3), high = interleaved (0,2,3,1); must remain stable during burst execution.
ZZ	Sleep Mode Input	Synchronous active-high; gates internal clock and reduces power to retention level; data preserved; pin mapped to physical pin 64 (VSS/ZZ).

Key Features

Feature	Design Value
ZBT™ Zero Bus Turnaround	Eliminates idle cycles between read/write transitions, enabling back-to-back memory transactions at full 166 MHz rate without bus arbitration overhead.
Internally Synchronized OE	Removes need for precise OE timing control - outputs automatically tri-state on deselect or suspend, simplifying timing closure in high-speed designs.
Pipelined Address/Data Registers	Two-stage pipeline (address/control latched on cycle n, data valid on cycle n+2) enables deterministic 3.5 ns access and predictable latency budgeting.
Individual Byte Write Control	Four independent BWx signals allow selective 9-bit writes without external byte-lane gating, reducing FPGA logic utilization in protocol-aware buffers.
Three-Chip-Enable Architecture	Supports seamless depth expansion across multiple devices using CE1/CE2/CE2 logic - no external decode required for 2× or 4× capacity scaling.

Applications

Network Packet Buffer	Telecom Line Card Cache
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches before classification or forwarding decisions. IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM acting as first-level packet buffer with deterministic 3.5 ns access and zero-turnaround burst reads. Use Value: Enables line-rate processing of 10 GbE frames by sustaining >12 GB/s effective bandwidth via 4-word bursts and pipelined addressing.	Use Scenario: Caching voice channel status, signaling data, and jitter buffer contents in TDM-over-IP gateways operating at –40°C to +85°C ambient. IC Role / Device Role / Timing Role: Industrial-grade synchronous SRAM providing reliable data retention and burst-access memory for real-time voice processing pipelines. Use Value: Guarantees data integrity across temperature extremes while supporting burst-mode DMA transfers to DSP subsystems without dead cycles.
High-Speed Test Equipment Memory	Industrial PLC Data Log Buffer
Use Scenario: Capturing high-resolution waveform samples from multi-channel ADCs in automated test equipment with tight timing constraints. IC Role / Device Role / Timing Role: Deterministic-latency memory buffer synchronizing sample capture and post-processing; CLK-driven register alignment ensures sub-nanosecond skew control. Use Value: Delivers 166 MHz sustained write/read throughput with burst capability, eliminating FIFO bottlenecks in real-time digitizer architectures.	Use Scenario: Logging sensor readings, fault events, and operational timestamps in programmable logic controllers deployed in factory-floor environments. IC Role / Device Role / Timing Role: Non-volatile-retention-capable SRAM (with ZZ sleep mode) serving as fast-access circular buffer for time-critical diagnostics and maintenance records. Use Value: Reduces system power during idle periods via synchronous sleep mode while preserving log data - extends battery backup runtime in offline-capable PLCs.

Network Packet Buffer

Telecom Line Card Cache

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches before classification or forwarding decisions.

IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM acting as first-level packet buffer with deterministic 3.5 ns access and zero-turnaround burst reads.

Use Value: Enables line-rate processing of 10 GbE frames by sustaining >12 GB/s effective bandwidth via 4-word bursts and pipelined addressing.

Use Scenario: Caching voice channel status, signaling data, and jitter buffer contents in TDM-over-IP gateways operating at –40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Industrial-grade synchronous SRAM providing reliable data retention and burst-access memory for real-time voice processing pipelines.

Use Value: Guarantees data integrity across temperature extremes while supporting burst-mode DMA transfers to DSP subsystems without dead cycles.

High-Speed Test Equipment Memory

Industrial PLC Data Log Buffer

Use Scenario: Capturing high-resolution waveform samples from multi-channel ADCs in automated test equipment with tight timing constraints.

IC Role / Device Role / Timing Role: Deterministic-latency memory buffer synchronizing sample capture and post-processing; CLK-driven register alignment ensures sub-nanosecond skew control.

Use Value: Delivers 166 MHz sustained write/read throughput with burst capability, eliminating FIFO bottlenecks in real-time digitizer architectures.

Use Scenario: Logging sensor readings, fault events, and operational timestamps in programmable logic controllers deployed in factory-floor environments.

IC Role / Device Role / Timing Role: Non-volatile-retention-capable SRAM (with ZZ sleep mode) serving as fast-access circular buffer for time-critical diagnostics and maintenance records.

Use Value: Reduces system power during idle periods via synchronous sleep mode while preserving log data - extends battery backup runtime in offline-capable PLCs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
71V3558SA166PFGI	Includes IEEE 1149.1 JTAG boundary scan; otherwise identical timing, pinout, and electrical specs.	Required for production testability in high-reliability systems where in-circuit test coverage is mandated.	Select SA version only if JTAG debug/test access is needed; PFGI (non-SA) lacks TMS/TDI/TCK/TDO/TRST pins.
AS7C3256B-15JIN	256K × 16-bit organization, 15 ns async access, no ZBT™ or burst counter; 44-pin SOJ package.	Suitable for cost-sensitive, lower-speed control-plane memory where zero-turnaround and pipelining are unnecessary.	Not pin-compatible or functionally equivalent; use only in greenfield designs accepting higher latency and reduced bandwidth.

Compared with 71V3558S166PFGI, the SA variant adds JTAG test infrastructure without altering performance or footprint, while AS7C3256B-15JIN trades ZBT™ advantages for lower cost and simpler interface at significantly reduced speed and density - making it unsuitable for backplane-facing applications.

Availability

71V3558S166PFGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, high-speed test equipment memory, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3558S166PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3558S166PFGI belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-bandwidth, low-latency applications in networking, telecommunications, and test equipment where deterministic bus turnaround and pipelined throughput are critical.

FAQ

What is the memory organization and density of the 71V3558S166PFGI?

The 71V3558S166PFGI is configured as 128K × 36-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. It is pin-compatible with the 256K × 18-bit variant (71V3556S166PFGI) but operates exclusively in the 128K × 36 mode per its internal decoding and PKG100 pin assignment - A16 and A17 are no-connect in this configuration.

Does the 71V3558S166PFGI support JTAG boundary scan?

No, the 71V3558S166PFGI does not support JTAG boundary scan. That feature is exclusive to the "SA" suffix variants (e.g., 71V3558SA166PFGI), which include dedicated TMS, TDI, TCK, TDO, and TRST pins. The "S" version has those pins designated as NC in the TQFP package per datasheet drawing 5281 drw 02.

How does the ZBT™ architecture improve system performance in the 71V3558S166PFGI?

The ZBT™ architecture in the 71V3558S166PFGI eliminates dead cycles between consecutive read and write operations by decoupling bus direction control from the clocked transaction sequence. This allows back-to-back memory accesses at full 166 MHz without inter-cycle gaps, increasing effective bandwidth by up to 30% compared to standard synchronous SRAMs in burst-intensive applications like packet switching.

What is the function of the ADV/LD and LBO pins on the 71V3558S166PFGI?

On the 71V3558S166PFGI, ADV/LD is a synchronous control that loads a new external address when low (at rising CLK edge) or advances the internal burst counter when high. LBO is a static input selecting burst order: low enables linear sequence (0,1,2,3), high enables interleaved (0,2,3,1); both must be stable before and during burst execution to avoid undefined behavior.

Can the 71V3558S166PFGI operate in low-power mode, and how is it controlled?

Yes, the 71V3558S166PFGI supports synchronous sleep mode via the ZZ pin. When ZZ is driven high, the internal clock is gated and power consumption drops to minimum retention level while preserving all stored data. This mode is entered synchronously on the next rising CLK edge after ZZ assertion and is fully compatible with industrial temperature operation.

71V3558S166PFGI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 256K x 18

Memory Interface:: Parallel

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V3558S166PFGI FAQ

1.How can I place an order for 71V3558S166PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3558S166PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3558S166PFGI reliable?

The price and inventory of 71V3558S166PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3558S166PFGI is usually 5 days.

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71V3558S166PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3558S166PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3558S166PFGI?

For technical support, including 71V3558S166PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3558S166PFGI requirements.

6.How does Aetrix verify that 71V3558S166PFGI is sourced from the original manufacturer or authorized distributors?

All 71V3558S166PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3558S166PFGI meets industry standards.

7.What is the process for return or replacement of 71V3558S166PFGI?

All 71V3558S166PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3558S166PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3558S166PFGI part is unused and in its original packaging.

Return procedure for 71V3558S166PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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