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Renesas 71V3558S166PFGI8
- Part No.:
- 71V3558S166PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3558S166PFGI8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,668
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Product details
Overview
71V3558S166PFGI8 from Renesas is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 166 MHz operation, 3.5 ns clock-to-data access, zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes, individual byte write control (BW1–BW4), and operates across –40°C to +85°C for industrial embedded memory subsystems.
For engineers reviewing the 71V3558S166PFGI8 datasheet, 71V3558S166PFGI8 pinout, 71V3558S166PFGI8 application, or 71V3558S166PFGI8 equivalent, this device serves high-throughput packet buffering in network switches, real-time DSP data caching, and burst-access control plane memory where deterministic latency and bus efficiency are critical.
Technical Context
The 71V3558S166PFGI8 implements a fully synchronous, positive-edge-triggered architecture with registered address, control, and I/O paths. Its ZBT™ feature eliminates dead cycles between read/write transitions by enabling immediate bus direction reversal without OE control or external timing management.
It integrates an on-chip burst counter, selectable linear/interleaved addressing via LBO, and three chip enables (CE1, CE2, CE2) for depth expansion. The device supports optional IEEE 1149.1 JTAG boundary scan (SA variant only) and includes a synchronous sleep mode (ZZ) for power reduction while retaining data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit configuration via pin strapping |
| Max Clock Frequency | 166 MHz; enables 6.0 ns cycle time for sustained burst throughput |
| Access Time | 3.5 ns clock-to-data (tCD); guarantees deterministic output valid window for pipelined systems |
| Supply Voltage | 3.3 V ±5% (VDD core) and 3.3 V ±5% (VDDQ I/O); dual-rail design isolates core logic noise from data bus |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade reliability in telecom and control applications |
| Burst Capability | 4-word burst (linear or interleaved); reduces address overhead and improves bandwidth efficiency |
| Byte Write Control | Four independent active-low BW1–BW4 signals; enables selective 9-bit byte updates without masking logic |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant (PFGI8 suffix denotes industrial temperature, Pb-free, TQFP).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge; A0–A16 used for 128K×36 mode; A17 unused |
| CLK | System Clock Input | Positive-edge-triggered master timing reference; all synchronous registers aligned to this edge |
| R/W | Read/Write Control | Synchronous signal defining cycle type; determines data flow direction two cycles later |
| ADV/LD | Burst Address Advance / Load | High = increment internal burst counter; Low = load new external address into register |
| LBO | Burst Order Select | Static input: Low = linear burst sequence; High = interleaved burst sequence |
| BW1–BW4 | Byte Write Enables | Active-low per-byte controls for 9-bit segments (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4) |
| CE1, CE2, CE2 | Chip Enable Inputs | Three enables support depth expansion; CE1/CE2 low + CE2 high selects device |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous bus; registered input/output paths ensure timing closure |
| OE | Output Enable | Asynchronous; tri-states outputs when high-no timing coordination needed with CLK |
| CEN | Clock Enable | Synchronous suspend: holds all internal registers and outputs unchanged when high |
| ZZ | Sleep Mode Input | High activates internal clock gating; reduces power while maintaining data retention |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive reads and writes-enables back-to-back burst transfers without bus idle time |
| Internally Synchronized OE | Removes need for external OE timing control; outputs automatically align to CLK edge, simplifying system-level timing |
| 4-Word Burst Counter | Reduces address bus activity by 75% during sequential accesses-lowers controller overhead and PCB routing complexity |
| Individual Byte Write (BW1–BW4) | Enables granular 9-bit updates without full-word read-modify-write; critical for protocol header manipulation and status flags |
| Three Chip Enables (CE1/CE2/CE2) | Supports seamless memory depth expansion up to 3× without external decode logic or glue logic |
| Industrial Temperature Range | Validated operation from –40°C to +85°C ensures reliability in base station, motor drive, and factory automation environments |
Applications
| Network Packet Buffering | DSP Data Caching |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payload fragments in Layer 2/3 switches. IC Role / Device Role / Timing Role: High-speed, low-latency buffer with zero-turnaround burst capability for line-rate forwarding. Use Value: Eliminates bus arbitration delays between header read and payload write, sustaining 166 MHz throughput under mixed traffic loads. |
Use Scenario: Holding coefficient tables and intermediate results in real-time audio/video processing pipelines. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory synchronized to DSP core clock domain. Use Value: 3.5 ns tCD and pipelined outputs enable tight loop timing for FIR/IIR filter stages without pipeline stalls. |
| Control Plane Memory | Industrial PLC Data Exchange |
Use Scenario: Storing routing tables, ACL entries, and session state in telecom control cards. IC Role / Device Role / Timing Role: Dual-port-like behavior via ZBT™ for concurrent CPU read and ASIC write operations. Use Value: Back-to-back read/write bursts reduce CPU wait states and improve control plane responsiveness by >30% vs. standard SSRAM. |
Use Scenario: Exchanging process variables and configuration parameters between motion controllers and I/O modules. IC Role / Device Role / Timing Role: Industrial-grade shared memory node supporting deterministic cyclic data exchange. Use Value: –40°C to +85°C rating and ZZ sleep mode ensure reliable operation in uncontrolled cabinet environments with thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-167BZC | 256K × 18-bit, 167 MHz, 3.3V, no ZBT™-uses conventional OE-controlled output enable | Lacks zero bus turnaround; requires external OE timing and suffers 1-cycle dead time between R/W transitions | Choose for cost-sensitive designs where burst efficiency is secondary to pin count reduction (100-pin BGA vs. TQFP) |
| AS7C33128PFSIG | 128K × 32-bit, 166 MHz, 3.3V, no burst counter or byte write; asynchronous OE | Non-pipelined, no ADV/LD or LBO; limited to single-word random access-no burst acceleration | Select when application uses only sporadic single-word accesses and does not require burst or ZBT™ features |
Compared with CY7C1356BV18-167BZC and AS7C33128PFSIG, the 71V3558S166PFGI8 uniquely delivers zero bus turnaround, 4-word burst, and per-byte write control in a 100-pin TQFP-making it optimal for latency-critical, high-bandwidth memory subsystems requiring deterministic timing and minimal glue logic.
Availability
71V3558S166PFGI8 is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and real-time signal processing applications requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.
Supply support for 71V3558S166PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3558S166PFGI8 belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-performance networking and real-time embedded systems demanding zero-latency bus turnaround and deterministic burst access.
FAQ
What memory configuration does the 71V3558S166PFGI8 support?
The 71V3558S166PFGI8 is configured as 128K × 36-bit (4.5 Mbit) in its default pinout. It shares die architecture with the 71V3556S series and supports 256K × 18-bit operation via address pin reassignment-verified in the functional block diagram and pin configuration tables for PKG100.
Does the 71V3558S166PFGI8 include JTAG boundary scan support?
No-the 71V3558S166PFGI8 is the "S" version and does not include JTAG. Only the "SA" variant (e.g., 71V3558SA) integrates IEEE 1149.1-compliant TMS, TDI, TCK, TDO, and optional TRST pins. Pin configurations for the S version show these as NC.
How does the ZBT™ feature eliminate dead cycles in the 71V3558S166PFGI8?
The 71V3558S166PFGI8 achieves zero bus turnaround by internally synchronizing output enable and eliminating external OE control. Reads and writes can be issued consecutively on successive clocks-no bus idle period is required between direction changes, as confirmed in the ZBT™ description and truth table.
What is the function of the ADV/LD and LBO pins on the 71V3558S166PFGI8?
ADV/LD controls burst counter behavior: low loads a new external address; high increments the internal counter. LBO selects burst order-low enables linear sequence (0,1,2,3); high enables interleaved (0,2,1,3). Both are synchronous inputs validated in the pin definition table and burst sequence diagrams.
Can the 71V3558S166PFGI8 operate with different supply voltages for core and I/O?
Yes-the 71V3558S166PFGI8 uses separate VDD (3.3 V ±5% core) and VDDQ (3.3 V ±5% I/O) supplies. This dual-rail design isolates core logic switching noise from the data bus, improving signal integrity and meeting the recommended DC operating conditions table.
71V3558S166PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3558S166PFGI8 FAQ
1.How can I place an order for 71V3558S166PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3558S166PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3558S166PFGI8 reliable?
The price and inventory of 71V3558S166PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3558S166PFGI8 is usually 5 days.
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71V3558S166PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3558S166PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3558S166PFGI8?
For technical support, including 71V3558S166PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3558S166PFGI8 requirements.
6.How does Aetrix verify that 71V3558S166PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3558S166PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3558S166PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V3558S166PFGI8?
All 71V3558S166PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3558S166PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3558S166PFGI8 part is unused and in its original packaging.
Return procedure for 71V3558S166PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3558S166PFGI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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