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Renesas 71V3558SA100BQG

Part No.:
71V3558SA100BQG
Manufacturer:
Renesas
Category:
Memory
Package:
165-TBGA
Datasheet:
Aetrix71V3558SA100BQG.pdf
Description:
IC SRAM 4.5MBIT PAR 165CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,528

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Product details

Overview

71V3558SA100BQG from Renesas is a 3.3V synchronous ZBT SRAM with 128K × 36-bit (4.5 Mbit) organization, 100 MHz clock speed, 3.5 ns clock-to-data access, zero bus turnaround architecture, and JEDEC-standard 100-pin TQFP packaging. It enables high-throughput memory interfacing in network packet buffers and telecom line cards where write-read transition latency must be eliminated.

For engineers reviewing the 71V3558SA100BQG datasheet, 71V3558SA100BQG pinout, 71V3558SA100BQG application, or 71V3558SA100BQG equivalent, key selection criteria include burst-mode timing compliance, byte-write granularity for partial-word updates, JTAG boundary-scan support for production testability, and industrial-temperature operation up to +85°C.

Technical Context

The 71V3558SA100BQG implements a fully pipelined synchronous interface with positive-edge-triggered address, data, and control registers. Its internal burst counter supports linear or interleaved 4-word sequences controlled by the LBO pin, while ADV/LD governs address load versus counter increment behavior.

ZBT™ operation eliminates dead cycles between read and write operations via synchronized output buffer enable and dual-phase command execution - address/control latched on cycle N, data transfer occurs on cycle N+2. The device integrates three chip enables (CE1, CE2, CE2) with two-cycle deselect and optional IEEE 1149.1 JTAG for boundary scan.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 36-bit (4.5 Mbit); supports depth expansion via three chip enables
Clock Frequency 100 MHz maximum; defines system throughput ceiling for burst and random access
Clock-to-Data Access 3.5 ns typical; determines minimum latency from address valid to first output word
Burst Capability 4-word linear or interleaved burst; reduces address bus traffic during sequential accesses
Supply Voltage VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails enable noise isolation
Operating Temperature –40°C to +85°C industrial grade; validated for embedded telecom and industrial control
JTAG Support IEEE 1149.1 compliant (TMS, TDI, TCK, TDO, TRST); enables board-level test and debug

Pinout & Package

71V3558SA100BQG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with exposed pad not electrically connected. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14/16/66 tolerate VIH-level input without direct VDD connection.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs Synchronous inputs latched on rising CLK edge; A0–A16 used for 128K×36 configuration
CE1, CE2, CE2 Chip Enables Three independent enables (CE1/CE2 active-low, CE2 active-high); any false disables new operations
R/W Read/Write Control Synchronous signal defining cycle type; sampled at rising CLK with ADV/LD low
ADV/LD Advance Burst / Load Address Low = load external address; high = increment internal burst counter; controls burst sequencing
BW1–BW4 Byte Write Enables Four active-low signals controlling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4)
LBO Burst Order Select Static input: low = linear burst, high = interleaved burst; must remain stable during operation
CLK System Clock Primary timing reference; all synchronous inputs referenced to rising edge
OE Output Enable Asynchronous; drives I/O pins to high-Z when high; may be tied low for continuous read enable
ZZ Sleep Mode Active-high synchronous input; gates internal clock and reduces power while retaining data
TMS, TDI, TCK, TDO, TRST JTAG Interface IEEE 1149.1 boundary-scan signals; TRST optional asynchronous reset (BGA only)
I/O0–I/O31, I/OP1–I/OP4 Data I/O 36-bit bidirectional bus; registered input/output paths ensure timing closure in high-speed designs
VDD, VDDQ, VSS Power/Ground VDD = 3.3 V core supply; VDDQ = 3.3 V I/O supply; multiple VSS pins reduce ground bounce

Key Features

Feature Design Value
ZBT™ Zero Bus Turnaround Eliminates idle cycles between read/write transitions, enabling back-to-back memory transactions
Internally Synchronized OE Removes need for external OE timing control; outputs automatically tri-state after deselect or write
4-Word Burst Counter Reduces address bus activity by 75% during sequential accesses; selectable linear/interleaved order
Individual Byte Write (BW1–BW4) Enables partial-word updates without read-modify-write; supports 9-bit granularity per byte lane
Three Chip Enables Allows seamless depth expansion across multiple devices without external logic or address decoding
JTAG Boundary Scan (IEEE 1149.1) Supports automated PCB test, interconnect verification, and in-system programming diagnostics

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in switching ASIC interfaces.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level packet buffer with deterministic 3.5 ns read access.

Use Value: ZBT™ architecture enables immediate write-to-read turnaround for header inspection and payload forwarding without pipeline stalls.

Use Scenario: Frame buffering in SONET/SDH add-drop multiplexers requiring burst-aligned data transfers.

IC Role / Device Role / Timing Role: Synchronous SRAM providing 4-word burst reads aligned to STS-192 frame boundaries.

Use Value: Interleaved burst mode matches SONET payload scrambling patterns, reducing bus arbitration overhead.

Industrial PLC Data Logging Medical Imaging FIFO

Use Scenario: Cyclic acquisition of sensor data streams in programmable logic controllers with deterministic sampling intervals.

IC Role / Device Role / Timing Role: Industrial-grade SRAM storing timestamped analog/digital I/O snapshots at 100 kHz sample rate.

Use Value: –40°C to +85°C operation ensures reliability in uncontrolled cabinet environments; ZZ sleep mode cuts standby power by >90%.

Use Scenario: Real-time buffering of ultrasound or MRI pixel data between ADC and image processor.

IC Role / Device Role / Timing Role: Pipelined SRAM absorbing bursty ADC output while feeding steady-rate GPU DMA engine.

Use Value: Registered I/O paths and 100 MHz clock support jitter-free data handoff; byte-write enables selective pixel correction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
71V3558SA100BG Same die, 119-ball BGA package; no TQFP footprint compatibility Preferred for space-constrained PCBs; requires re-layout and thermal pad management Select when board area is critical and JTAG test access is required via BGA balls
71V3558SA85BQG Identical functionality and pinout; rated for 85 MHz max clock (vs. 100 MHz) Lower power consumption at reduced frequency; suitable for cost-sensitive non-peak-bandwidth systems Choose when system clock is ≤85 MHz and qualification testing budget limits use of faster grade

Compared with 71V3558SA100BQG, the 119-ball BGA variant offers higher I/O density but demands PCB redesign, while the 85 MHz version trades peak bandwidth for lower power and cost - both retain identical ZBT™ behavior, burst control, and industrial temperature range.

Availability

71V3558SA100BQG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply, long-term lifecycle support, and guaranteed industrial-temperature performance.

Supply support for 71V3558SA100BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3558SA series belongs to Renesas' high-performance ZBT SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in networking and real-time control equipment.

FAQ

What is the maximum clock frequency supported by the 71V3558SA100BQG?

The 71V3558SA100BQG supports a maximum clock frequency of 100 MHz. This rating is validated across the full industrial temperature range (–40°C to +85°C) and ensures reliable operation with 3.5 ns clock-to-data access time under specified VDD/VDDQ conditions. The 71V3558SA100BQG achieves this performance using a high-speed CMOS process and fully registered I/O architecture.

Does the 71V3558SA100BQG support true zero bus turnaround between read and write operations?

Yes, the 71V3558SA100BQG implements ZBT™ (Zero Bus Turnaround) architecture, which eliminates dead cycles between consecutive read and write operations. This is achieved through internally synchronized output buffer enable and pipelined command execution - the 71V3558SA100BQG initiates the next transaction immediately after completing the prior one without bus idle periods.

How does the burst counter function in the 71V3558SA100BQG?

The 71V3558SA100BQG contains an on-chip 4-word burst counter controlled by ADV/LD and LBO. When ADV/LD is high, the counter increments; when low, it loads a new external address. LBO selects linear or interleaved sequence. Each burst delivers four consecutive words with single address setup, reducing bus overhead by 75% compared to discrete accesses - a core capability of the 71V3558SA100BQG.

Can the 71V3558SA100BQG operate in low-power sleep mode?

Yes, the 71V3558SA100BQG supports synchronous sleep mode via the ZZ pin. When ZZ is driven high, the internal clock is gated and dynamic power drops significantly while data retention is guaranteed. This feature is especially valuable in battery-backed or energy-conscious applications like portable medical devices or remote industrial sensors using the 71V3558SA100BQG.

Is JTAG boundary scan available on the 71V3558SA100BQG in TQFP packaging?

Yes, the 71V3558SA100BQG includes full IEEE 1149.1 JTAG support (TMS, TDI, TCK, TDO, TRST) in its 100-pin TQFP package. Pins are assigned per JEDEC standard layout - TMS/TDI/TCK/TDO appear on dedicated pins (e.g., TMS on pin A11, TDI on pin P6), and TRST is available as optional reset. This enables production test, interconnect validation, and debug without requiring BGA-specific tooling for the 71V3558SA100BQG.

71V3558SA100BQG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
165-TBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
256K x 18
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-CABGA (13x15)

71V3558SA100BQG FAQ

1.How can I place an order for 71V3558SA100BQG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3558SA100BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3558SA100BQG reliable?

The price and inventory of 71V3558SA100BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3558SA100BQG is usually 5 days.

3.What payment methods are accepted for 71V3558SA100BQG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3558SA100BQG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3558SA100BQG?

71V3558SA100BQG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3558SA100BQG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3558SA100BQG?

For technical support, including 71V3558SA100BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3558SA100BQG requirements.

6.How does Aetrix verify that 71V3558SA100BQG is sourced from the original manufacturer or authorized distributors?

All 71V3558SA100BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3558SA100BQG meets industry standards.

7.What is the process for return or replacement of 71V3558SA100BQG?

All 71V3558SA100BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3558SA100BQG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3558SA100BQG part is unused and in its original packaging.

Return procedure for 71V3558SA100BQG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

71V3558SA100BQG Tags

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